Plasma surface etching
1. Almost all kinds of organic materials can be etched by plasma. The etching effect is based on the same chemical reaction as the cleaning effect. Through the correct selection of plasma equipment gas composition and proportion, using the appropriate excitation frequency, adjusting different power, vacuum degree, treatment time, etc. Can achieve a powerful treatment effect.
2. Carbon tetrafluoride can be used in most cases in addition to oxygen to increase the etching rate. In this process, the free radicals produced by the tetrafluorocarbons exceed the activity of the oxygen plasma. However, the proportion of tetrafluorocarbons reaches a critical point where their activity gradually decreases and their reaction gases must be controlled with appropriate filters.
3. The combination of wet chemical etching and low-temperature plasma dry etching can be adopted for the workpiece with large etching amount to make the treatment more effective.
Advantages of plasma etching:
Aperture permeability is good, very suitable for microporous;
Has almost all dielectric etch;
The process is controllable and the consistency is good.
Support downstream drying processes;
Low cost of use and waste disposal;
Environmental protection technology, no harm to the operator's body.
Semiconductor, microelectronics, printed circuit board, biochip, solar silicon wafer etch, etc.