图片名称

NEWS

Popular Articles

Contact Us

图片名称
图片名称

Service Hotline

13632675935

CRF

TEL：13632675935

E-mail：shaobo@sfi-crf.com

Address: 1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

Application of plasma device Stress Proximity technology in semiconductor Technology

Application of plasma device Stress Proximity technology in semiconductor Technology

Stress Proximity Technology (SPT) is a Technology widely used in advanced logic chip Technology in recent years. According to the technical principle, after the metalization of gate and source leakage zones, partial or complete side walls can be removed by means of plasma etching. The stress of subsequent deposited stress layer or double stress layer can be more effectively applied to the channel zone. Through stress proximity technology, the performance of NMOS can be improved by 3%. In the aspect of PMOS, the performance improvement is more obvious due to the introduction of stress proximity technology. With SiGe technology, stress proximity to the metal can improve performance by up to 40%.   The effect of the stress proximity technique is related to the periodic size or density of the gate. The performance of the dense gate circuit is improved by 28% after the introduction of stress proximity technology, which is more obvious compared with the 20% improvement of the sparse gate circuit. This is because in a dense gate circuit, the space between the gate and the gate is narrow, and the volume of the stress layer after deposition differs significantly before and after the introduction of stress proximity technology, while the volume of the stress layer is closely related to the stress layer.   The stress proximity etching methods are mainly divided into wet etching and dry etching of plasma equipment. During the plasma etching process, the metal silicides in the source leakage area are always exposed, and the metal silicides determine the resistance of the source leakage area. Therefore, the damage of metal silicide should be strictly controlled in the process of removing side wall of plasma equipment. Because the side walls are generally made of silicon nitride, the wet etching mainly uses hot phosphoric acid solution. Wet etching has the advantage of high selectivity of si3N4 to si3N4, which can control the damage of si3N4 well under the condition of high etching amount. At the same time, wet etching belongs to isotropic etching, which can effectively remove the side wall compared with the anisotropic etching of dry etching in plasma equipment. The disadvantage of wet etching is that the Particle defects of chemical containers are difficult to control.   Plasma equipment dry etching adopts high-density plasma equipment coupled with coils to etch silicon nitride side wall with heavy polymer gas plasma. The heavy polymer gases mainly include CH2F2 and CH3F, which are controlled with a certain amount of O2 gas to achieve the purpose of etching silicon nitride and stopping on the silicide. Plasma etching equipment CH2F2 / CH3F gas, on the surface of a silicon nitride polymer far less than the thickness of the silica or polymer is formed on the metal silicides, so in the surface of the silicon nitride, plasma etching reaction can continue equipment, while the metal silicide polymer thick, so the choice of higher than. However, due to the dissociation of a large number of F atoms, the plasma still has obvious damage to metal silicides. In comparison, the selection ratio of silicon nitride for dry etching in plasma equipment is smaller than that for wet etching.   The damage of silicide can be controlled by controlling the etching amount by controlling the process time. The more stress near the etching of plasma equipment, the more serious the damage and the higher the resistance value of the metal silicide. On the other hand, because the side wall is completely or partially removed, the depth-width ratio of subsequent filling is reduced, and the filling performance of the subsequent contact through hole stop layer and the interlayer dielectric layer is improved.

MORE +
Verification of the effect of plasma cleaning machine for wide-width plasma equipment

Verification of the effect of plasma cleaning machine for wide-width plasma equipment

How to verify the processing effect of the products or materials processed by the plasma cleaning machine? Is there any other method besides the well-known droplet Angle (contact Angle), tester, and Dyne pen? The answer is yes. The commonly used methods for judging the cleaning effect of wide-width plasma equipment and plasma cleaning machine include droplet Angle (contact Angle) method, Dyne brush method, surface energy test, etc., while other methods need some special instruments or special processing effect to react, and the scope of application is limited.   1. Droplet Angle (contact Angle) is a commonly used measurement method to evaluate the plasma cleaning effect. The test results are accurate, easy to operate, repeatable and stable. The principle of this method is to titrate a certain amount of droplet on the sample surface by optical surface contour method to detect the contact Angle of droplet. The smaller the contact Angle is, the better the cleaning effect will be. The droplet test is used to show whether the plasma has an effect on the processing of the product. In some cases, the result cannot be completely relied on to determine whether the processing requirement has been met. For example, the droplet test cannot show whether the Particle has been removed during Particle removal. Measuring different material surface contact Angle tester is a kind of wide Angle of plasma equipment before and after processing water droplets of instrument, it depends on the processed material molecules or organizational structure of different initial surface energy materials, plasma before and after processing the surface reaction is different also, so after processing point of view is different also, especially the organic material. Note: The Angle of droplet test should be unified. The size of droplet in each test should be as consistent as possible to ensure that the water used in the test does not change greatly.   2. The Dyne pen is widely used in enterprises, and its operation and detection method are also very simple. Dyne is a unit of surface tension. The method wetted and contracted the free energy of different surfaces by means of the different values of the Dyne pen, namely the liquid with different surface tension, so as to judge the level of the free energy of samples. However, due to the influence of different manufacturers producing Dyne pens, manual operation, its repeatability and stability will be slightly less. The smaller the unit dyne value of the surface energy of an object is, the lower the surface energy is. The larger the dyne value is, the greater the surface energy is, the better the adsorption property is, and the better the binding and coating effect is. The Dyne pen can directly measure the energy on the surface of an object, making it convenient and reliable to use. Note: The surface energy test fluid works in the same way as the Dyne pen.   3. SEM scanning is short for electron scanning electron microscope, which can magnify the surface of an object thousands of times, and can take microscopic images of the molecular structure.   4. infrared scanning is the use of infrared detection equipment, before and after the plasma cleaning machine treatment of the workpiece surface polarity groups and elements in the workpiece combination state detection.   Tensile (thrust) testing This method is both practical and reliable for products used for bonding.   6. High power microscope observation method is suitable for related products requiring Particle removal.   7. Slicing method is suitable for the industry of continuous slicing observation, such as PCB and FPC processing industry. By making slicing, the corrosion in the hole of circuit board can be observed and measured by crystal phase microscope.   8. Weighing method is suitable for measuring the effect of plasma on the surface of materials after corrosion and ashing. Its main purpose is to test the uniformity of wide-width plasma equipment treated by the plasma cleaning machine, which is a relatively high index.

MORE +
Etching of metal hard mask layer in large plasma cleaning machine

Etching of metal hard mask layer in large plasma cleaning machine

Using metal as large plasma cleaning machine groove process in the first groove etching hard mask layer can significantly reduce (ultra) low dielectric constant material damage, improve the metal wires twisted and roughness and control structure of double Damascus zhongtong between holes and grooves flat smooth transition transformation, from 45 nm technology node begins to be after a period of consolidation is widely used.   Since the metal hard mask pattern etched by large plasma cleaner will be used as the mask layer for groove etching, the graphic integrity and key size of the metal hard mask layer etched will be transferred to (super) low dielectric constant material again, and the metal wire will be formed after groove etching. Metal hard mask layer after etching graphic design graphics for the transmission of fidelity, etching after the key size deviation of load effect, will be the subsequent etching grooves inheritance or even due to the load effect of etching grooves will continue to enlarge the deviation, as a result, large plasma cleaning machine need to strictly control the metal etching hard mask layer. The smaller the load effect is, the higher the fidelity of the designed metal line graph is. The graphics can be transferred strictly from the mask through exposure and development to the metal hard mask layer, and the lateral wall contour Angle of the metal hard mask is approximately vertical, which is the requirement of the process integration for the metal hard mask layer etching process.   Typical large plasma cleaning machine metal hard mask etching process is generally photoresist and bottom anti-reflective layer organic material as a single etching mask structure.

MORE +
Wide width plasma surface processor plasma Cleaning integrated circuit manufacturing

Wide width plasma surface processor plasma Cleaning integrated circuit manufacturing

As the volume of manufacturing integrated circuits decreases, the size of lead bonding pads decreases, leading to increased potential contamination of pads. When the wire bonding pad is polluted, the tensile strength of the bonding pad decreases and the uniformity of the connection strength decreases. It is therefore important to remove contaminants from the bonding pad prior to lead bonding.   The plasma cleaning technology of wide width plasma surface processor driven by RF can be used to prepare the solder pad before lead bonding. Wideband plasma surface treatment technology is used to clean the surface of the device in order to improve the tensile strength of the lead, thus reducing the fault of the device and increasing the pass rate.   The quality of lead bonding in integrated circuits has great influence on the reliability of microelectronic devices. The bonding area must be free of pollution and have good bonding performance. The presence of pollutants such as oxides and organic residues will seriously weaken the tensile strength of lead bonding. By using the wide-width plasma surface processor, the dirt produced in the process can be thoroughly removed, so as to effectively remove the dirt, and make the dirt surface activated, significantly improve the bonding strength of lead, effectively improve the reliability of integrated circuit devices.   The plasma cleaning treatment of chip and package substrate in integrated circuit can effectively improve the surface activity of the substrate, greatly improve the bonding strength, reduce the lamination of chip and substrate, improve the thermal conductivity, improve the reliability and stability of integrated circuit, and improve the service life of the product.   By using the plasma cleaning technology, the processing technology of IC can be improved and the quality of the products can be improved effectively. With the application of plasma surface treatment technology, we have more and better ways to treat materials! Believe in technology, believe in the future.

MORE +
Process integration Requirements for etching process of through-hole plasma plasma cleaning machine

Process integration Requirements for etching process of through-hole plasma plasma cleaning machine

Through hole etching: In view of the previous introduction of the copper-interconnect process, the through-hole process has a complete plasma plasma cleaning machine plasma etching step to form the through-hole process, while the through-hole etching step and groove etching step of the groove process are formed simultaneously in the same plasma etching process. Therefore, the following introduction of copper-through-hole etching process is mainly aimed at the first through-hole process flow; First of all, in the trench process of through-hole etching process, we will focus on the process integration of the through-hole plasma plasma cleaning machine etching process requirements, plasma etching technology corresponding solutions, and its impact on the electrical performance and reliability of contact resistance.   Process integration Requirements for through hole etching process: Although the hard mask method can significantly reduce the damage to the low dielectric constant material during the ashing process, the photoresist mask method is still popular because of its simple process flow and easy control of the key size of the hole.   Process integration Requirements for copper through hole etching process are as follows: (1) Meet the requirements of the plasma plasma cleaning machine etched after the key size, as well as excellent size uniformity, to ensure the uniformity and stability of contact resistance. (2) The through-hole should have a good roundness and should not have a striped opening shape, otherwise it will seriously affect the reliability of the circuit. (3) The dielectric etching has sufficient selection ratio for the etching stop layer, which can not only ensure the plasma plasma cleaning machine through the etching process window, but also prevent the breakdown of the metal copper in the front layer.

MORE +
Are large on-line vacuum plasma cleaning machines harmful to body

Are large on-line vacuum plasma cleaning machines harmful to body

Large online vacuum plasma cleaning equipment is a new high-tech product technology application, many companies may have to buy, many bosses cheerfully plasma equipment to buy back, in order to improve the quality of products, but employees are too afraid to approach, afraid have radiation to the operation, the following solved it really harmful to the human body.   Compared with the traditional process, what are the advantages of large on-line vacuum plasma cleaning machine equipment? The effect of plasma is gas-solid coherent chemical reaction, no water consumption, no need to add chemical agents, no pollution to the natural environment. The whole process of gas drying treatment, no need of anticoagulant and water, almost no environmental problems, so energy conservation and environmental protection, save more costs.   Large on-line vacuum plasma equipment is applicable to a wide range, regardless of the type of processing materials, processing can be completed, such as metal materials, semiconductor chips, metal oxides and most fiber materials can be well processed; Short action time, fast reaction speed, high reaction level, wide processing objects, can significantly improve product quality. The original function of the substrate has not changed. The modified material is only on the surface and belongs to several to a dozen levels of nano-technology processing, such as the etching processing of nano-semiconductor chips.   Especially for fiber materials, the storage time is longer and the surface tension coefficient is higher than corona discharge. Functions related to fiber materials play only (10 ~ 1000A), while maintaining the raw material itself characteristic, can produce a variety of new features, low cost, simple equipment, easy maintenance, can run continuously, so a few bottles of special gas can replace thousands of kilograms of cleaner, clean maintenance costs than to wet cleaning maintenance are much lower.   The whole process can control the processing technology, all the technical parameters can be set by computer and data record inquiry, complete the quality management. The processing technology is simple, the use is convenient, the production manufacture maneuverability is strong. There is no limit to the shape of the processed object, no matter the size, simple or complex, parts or textiles, etc., can be processed.   Large online vacuum plasma cleaning machine equipment in the operation, is to form some radiation, but these radiation is very small, will not have adverse effects on the human body, and large online vacuum plasma cleaning machine itself is also equipped with electromagnetic radiation shielding, so these radiation can be completely ignored. The process is a safe treatment process, no harm to the operator's body.

MORE +
< 1...383940...132 > proceed page
图片名称

CRF

National Service Hotline

136 3267 5935

Contact Email

shaobo@sfi-crf.com

Address:1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

图片名称

Add WeChat
Get related information

Links

Apply to exchange friend links

Copyright © Shenzhen Chengfeng Smart Co.

京ICP备10002622号-38

粤公网安备 44030602005200号

图片名称

Cheng Feng Zhi Zuang a focus on plasma research and development for 20 years

We

The services of

Inquire for free sample testing

1-to-1 program customization

24-hour online after-sales service

Source manufacturer

Get the program
%{tishi_zhanwei}%
图片名称

Scan the code for information

诚峰智造