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Process integration Requirements for etching process of through-hole plasma plasma cleaning machine

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Published on:

16 Dec,2020

Process integration Requirements for etching process of through-hole plasma plasma cleaning machine:

 

Through hole etching:

In view of the previous introduction of the copper-interconnect process, the through-hole process has a complete plasma plasma cleaning machine plasma etching step to form the through-hole process, while the through-hole etching step and groove etching step of the groove process are formed simultaneously in the same plasma etching process. Therefore, the following introduction of copper-through-hole etching process is mainly aimed at the first through-hole process flow; First of all, in the trench process of through-hole etching process, we will focus on the process integration of the through-hole plasma plasma cleaning machine etching process requirements, plasma etching technology corresponding solutions, and its impact on the electrical performance and reliability of contact resistance.

 

Process integration Requirements for through hole etching process:

Although the hard mask method can significantly reduce the damage to the low dielectric constant material during the ashing process, the photoresist mask method is still popular because of its simple process flow and easy control of the key size of the hole.

 

Process integration Requirements for copper through hole etching process are as follows:

(1) Meet the requirements of the plasma plasma cleaning machine etched after the key size, as well as excellent size uniformity, to ensure the uniformity and stability of contact resistance.

(2) The through-hole should have a good roundness and should not have a striped opening shape, otherwise it will seriously affect the reliability of the circuit.

(3) The dielectric etching has sufficient selection ratio for the etching stop layer, which can not only ensure the plasma plasma cleaning machine through the etching process window, but also prevent the breakdown of the metal copper in the front layer.

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