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Influence of through-hole etching process parameters on key dimensions, contour patterns and electrical properties of atmospheric plasma cleaning machine

Influence of through-hole etching process parameters on key dimensions, contour patterns and electrical properties of atmospheric plasma cleaning machine

The film material composition of the typical copper-through-hole atmospheric plasma cleaning machine etching process is composed of etching stop layer, interlayer dielectric layer, hard mask layer, anti-reflection coating and photoresist from bottom to top. The copper through hole etching process consists of four steps: the bottom anti-reflection layer and hard mask layer etching, main etching, over-etching and photoresist ashing. The bottom anti-reflection layer and the hard mask layer are etched by the atmospheric plasma cleaner using a combination of fluorine based gas and oxygen, such as CF4, CHF3, O2, to jointly complete the etching of the organic anti-reflection coating and the hard mask layer. Because hard mask layer is usually a silicon oxide, with CF4 and CHF3 common etching polymer can be created, and accumulated in the protective layer and interlayer dielectric layer on the lateral wall of, if let polymer deposition on the wall, the subsequent etching the abnormal graphics to transfer to the bottom of the hole, become a through hole at the top to the bottom of the stripes, increased the hole wall roughness, seriously affected the subsequent electroplating copper filling integrity, and, as a defect, prone to electromigration (EM), in turn, affects the reliability of the circuit. Therefore, in order to avoid the formation of such stripes, the deposition of polymer in the side wall of the interlayer protective layer must be strictly controlled during the etching of the bottom anti-reflective coating. Sun wu, etc by against reflector etching process parameters were studied, including atmospheric plasma cleaning machine CHF3 / CF4 etching gas ratio, plasma power and etching process time and so on, the results of the study showed CHF3 / CF4 ratio is lower, the stripe is less, this is because the more CF4 reduces the etching gas C/F ratio, thus can reduce the production of polymer. Low plasma power will significantly improve the striped phenomenon, this is due to the low power can reduce the concentration of in vitro, thereby directly reducing the generation of polymer, at the same time, the low power also weakened the atmospheric plasma cleaning machine plasma physics bombardment of photoresist, which in turn reduces the [C] content in plasma, from another Angle to reduce the generation of polymer. In addition, the shorter etching process time reduces the total amount of polymer, thus improving the striation phenomenon.   In addition, there is another mechanism for the formation of streaks. High source power and high bias power are usually used in the main etching step of the through-hole to etch the through-hole. High source power increases plasma concentration, and high bias power produces high-energy physical bombardment, which will accelerate the consumption of photoresist, especially in the area with dense graphics. Under high bias power, the consumption of photoresist will be faster. Whenever the photoresist is exhausted before the end of all the through hole etching process, the plasma of the atmospheric plasma cleaning machine will directly bombage the interlayer protective layer and interlayer dielectric material. With the gradual reduction of the photoresist mask, it is no longer able to protect the underlying material well, which leads to the phenomenon of a second stripe, which usually exists only at the top of the through-hole, and in bad cases, the bridging of the through-hole may occur.   To avoid the second stripe, more polymers need to be produced in the main etching step and deposited on the surface of the photoresist to reduce the loss of the photoresist, i.e. the selection ratio of photoresist needs to be improved. Therefore, the main etching step usually uses the etching gas with a relatively high C/F ratio, which is more likely to produce polymers, such as C4F8, C4F6, CH2F2, etc. Through the study of the process parameters of the main etching step, the results show that the higher the CxFy/O2 ratio is, the less the second fringe is. This is because the increase of CxFy will produce a large number of polymers. Reduced at the same time, the dosage of O2, makes the reaction of polymer by dissociation, removal rate will be reduced greatly, so the accumulation of the surface of the photoresist polymer will increase, can well protect the dielectric material bombarded by atmospheric plasma cleaning machine plasma or chemical etching, so as to avoid the phenomenon of the second kind of stripes. In addition, the bias of low power/source power can also improve the ratio of the second stripe phenomenon, because of the bias power main control is in the plasma ion acceleration, the source of power control is the concentration of plasma, a low bias power can reduce the ion bombardment energy, and the source of the high power will i

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Wide width linear plasma cleaning machine plasma treatment of flax fabric dyeing

Wide width linear plasma cleaning machine plasma treatment of flax fabric dyeing

Flax, ramie and other hemp fabrics with good permeability, cool, comfortable and other properties, by the majority of consumers like. However, because of the high degree of crystallinity and orientation of hemp fabric, the dye is not easy to infiltrate and diffuse, and the poor dyeing performance is not easy to dye into dark color, which limits the application of flax in high-grade fabrics to a certain extent. In the past, the dyeing properties of flax fabrics were improved mainly through cationic chemical modification, chemical grafting, rare earth method, coating method, adding darkening agent, etc. These methods have certain effects on the dyeing properties of flax fabrics. However, there are some disadvantages such as high cost, high water consumption, high energy consumption, environmental pollution and destruction of fiber performance. Wide width linear plasma cleaning machine Plasma surface treatment: The surface etching, weight loss and roughness of the fabric can be increased by oxygen plasma treatment with wide-width linear plasma cleaning machine. The surface of the fabric has microholes and cracks. The surface area of the fabric is increased. When oxygen plasma is used to treat flax fabric, oxygen atoms are infiltrated into the fiber surface, generating free radicals and causing oxygen radical reaction in the air. Such hydrophilic groups as hydroxyl group, carbonyl group and peroxy group are introduced to improve the hydrophilicity of fabric. The higher the treatment power, the more high-speed particles, the greater the energy, the more serious the bombardment etching effect on the fiber surface, the lower the crystallinity of the fiber surface, so as to improve the wettability of the fabric, which is conducive to the improvement of the dyeing concentration of the fabric.   Improving the etch roughness and wettability of fiber surface can improve the colouring rate and colouring depth of fiber. The increase of the dyeing rate is directly related to the wettability of the fabric. The better the wettability is, the more conducive it is to the penetration and diffusion of the dye into the fiber, thus increasing the dyeing percentage. The bombardment and etching of high energy particles on the surface of ramie fiber increases, which leads to the repeated reflection and absorption of the fiber surface, increases the total absorption of the fiber to the incident light, and produces the apparent dark effect. Wide width linear plasma cleaning machine plasma treatment is beneficial to improve the direct dye dyeing of flax fabric wash and wear resistance, can replace the color fixing agent Y for color treatment, reduce the consumption of chemical agents.   For the resin or linen fabric softener finishing, after wide linear plasma cleaning machine, plasma treatment, the fiber surface was etched, can make the fiber and finishing agent, further in the fiber surface to form a layer of a solid coarse layer, greatly reduces the light reflectivity of fiber surface, enhances the deep dyeing of fabrics.

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Etching process in plasma Cleaning Machine 3DNAND

Etching process in plasma Cleaning Machine 3DNAND

Compared with planar NAND flash process, 3DNAND has great changes in device structure, and the corresponding plasma surface processor plasma cleaning machine etching process is also very different from the past. The main new features of the process are around the 3D structure preparation, including the step etching; Channel through hole etching; Notch etching; Contact hole etching. 1. Plasma surface treatment machine plasma cleaning machine step etching The purpose of step etching is to connect each control grid layer separately for subsequent processes. As the control grid layer is in a stacked state, it needs to be extended to different degrees in the horizontal direction, while the contact hole structure prepared by the subsequent process connects different control grid layers and connects the interconnection circuit of the back segment for separate control. Plasma surface treatment Plasma cleaning machine step etching target material for SiO2 and Si3N4 stack structure, each step etching stop on the lower SiO2 surface. The step extension structure is formed by the reduction of the mask layer (generally photoresist), and the reduced size is transmitted to the target material supplier through the SiO2/Si3N4 etching process. The etching process is cycle etching. This process is usually accomplished using plasma cleaner inductively coupled plasma etching (ICP) models. The main control requirements are the consistency of each cycle size reduction during the photoresist reduction process, the edge roughness control, the degree of average size reduction on the entire wafer, and the selectivity of the SiO2/Si3N4 etching process for photoresist reduction. The accuracy of step width determines whether subsequent contact holes are properly connected to the specified control grid layer. Since the width of each step (i.e., the extension size of each control gate layer) is required to be hundreds of nanometers so that the subsequent contact hole can fall safely and accurately on the required control gate layer, each reduction process of photoresist mask layer in the cycling process requires a unilateral reduction of hundreds of nanometers. Generally, the etching gas is dominated by O2 to achieve a sufficiently high reduction rate. In the cyclic etching process, SiO2 and Si3N4 are etched and stopped on the lower SiO2 surface in a single time. Due to the need of selection ratio, they are generally decomposed into the steps of SiO2 etching (with a relatively low selection ratio) and Si3N4 etching, which requires a higher selection ratio for SiO2 to stop on the lower SiO2 surface. Usually, SiO2 is etched with etching gases with a relatively low carbon-fluorine ratio such as CF4/CHF3, while Si3N4 is etched with etching gases with a relatively high carbon-fluorine ratio such as CH2F2. The latter has a relatively low bias to provide an adequate selection ratio for SiO2. The total thickness of a pair of SiO2/Si3N4 layers in the industry mainstream is not more than 15nm, far less than the width of steps of hundreds of nanometers. The SiO2/Si3N4 etching requires relatively loose side wall Angle and does not need to be close to vertical. This is conducive to etching process adjustment to meet limited selection ratio requirements for SiO2 and photoresist. 2. Channel through hole etching for plasma cleaning machine of plasma surface processor The preparation of channel through hole structure consists of two processes: mask etching and channel through hole etching. (1) Channel through hole hard mask etching With the increase of capacity, the number of control grid layers has been gradually increased from 24 to 48, and more layers of devices are still under development. However, the channel through hole etching needs to etch through all SiO2/Si3O4 film pairs at one time. Compared with the contact hole depth of less than 200nm for the standard logic process (45nm process node), the 3D NAND middle channel hole depth is more than 400nm (early 24-layer 3D NAND structure). If 128 layers of control gate layer is to be realized, the channel through hole is more than L m. So channel through hole etching generally adopts hard mask etching process. This process is usually accomplished using plasma Surface treatment plasma Cleaner induced coupled plasma etching (ICP) models. According to the 3D NAND structure difference (mainly the difference in the number of gate layers), the hard mask material is mainly amorphous carbon. The etching gas is dominated by O2 or N2/H2 combination gas. The control requirements of mask etching mainly include: Graphic transfer accuracy. Avoid graphics deformation in etching process resulting in inaccurate graphics of channel through hole. Hardmask side walls need to be coherent and as vertical as possible. In the subsequent etching of 10 pairs of SiO2/Si3N4 thin film pairs, hard mask was used as the barrier layer. Defects in the hard mask side wall w

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Application of atmospheric Atmospheric Plasma Cleaning Machine in Nylon dyeing

Application of atmospheric Atmospheric Plasma Cleaning Machine in Nylon dyeing

Nylon fibers were treated with atmospheric pressure plasma cleaning machine and dyed with disperse dyes and fluorescent dyes before and after treatment. The results showed that plasma treatment could increase the surface roughness of fiber, increase the dyeing depth of fiber, improve the dyeing property of nylon fiber, and have no obvious effect on the fiber strength. Atmospheric pressure plasma cleaning machine technology is increasingly widely used in textile, can be used for fabric sizing, desizing, hemp degumming, wool anti felt shrinkage, synthetic fiber hydrophilic treatment, high performance fiber bond enhancement and other aspects. Atmospheric pressure plasma cleaning function can effectively improve the surface properties of nylon fiber and polymer, mainly because oxygen low pressure or atmospheric pressure plasma can introduce oxygen elements into the fiber surface in the form of hydroxyl and carboxyl groups, thus improving its hydrophilicity; Or because the tetrafluoride plasma can introduce fluorine-containing groups (-CF3, -CF2) into the fiber to form hydrophobic surface. The plasma treatment under atmospheric pressure reduces the vacuuming process, and the continuous treatment can be realized with relatively simple operation. In atmospheric plasma, the active substance oxidizes the oxygen, nitrogen and other elements in the air, and introduces it into the surface of nylon fiber, which increases the number of surface polarity genes and enhances the surface polarity, which is conducive to the adsorption and fixation of dyes. Plasma treatment on the surface of nylon fiber by atmospheric pressure plasma cleaner can improve the content of polar groups such as C-OH, C-OOH and C-NH2 on the surface of the fiber, improve the wettability of the fiber, accelerate the diffusion of dyes, increase the color depth of the fiber, and improve the color performance of the fiber to a certain extent. Plasma treatment can improve the diffusion rate, saturation and absorptivity of nylon fibers, that is, the dyeing properties of nylon fibers can be improved by atmospheric plasma treatment. Atmospheric plasma treatment, on the one hand, increases the smooth surface roughness of the fiber surface, enhances the hygroscopic properties of the fiber, is conducive to the adsorption of dye molecules on the fiber surface, and speeds up the diffusion rate of dye; In the process of atmospheric plasma treatment, nitrogen and oxygen elements in the gas enter the fiber surface in the form of hydroxyl, carboxyl, amino and so on, which increases the electronegativity of the fiber surface, which is conducive to the diffusion of dye molecules to the center of the fiber, making it fixed in the fiber interior, thus improving the dyeing rate of the fiber. Atmospheric pressure plasma cleaning machine to nylon fiber treatment almost no damage. The reason is that plasma treatment only modifies the surface layer of nylon fiber, which has no effect on the overall properties of the polymer, and the orientation and crystallization state of the fiber remain unchanged.

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Introduction of new phase change memory and the application of plasma cleaning machine etching

Introduction of new phase change memory and the application of plasma cleaning machine etching

Introduction of new phase change memory and the application of plasma cleaning machine etching: The development of phase change memory (PCM) has been relatively mature. Its principle is the obvious resistance difference between crystalline phase (low resistance) and amorphous phase (high resistance) of some PCM materials. The SET and RESET operations correspond to the low resistance and high resistance states of PCMS respectively, which means that the switch between "0" and "1" of PCMS does not require the erasure of flash memory. These two states can use the Joule thermal effect of an electric current to heat the PCM, thus rapidly switching and cycling. The initial state of PCMS is mostly crystalline phase (low resistance) due to the high temperature of the process in the back phase of logic. Conversion to an amorphous phase requires a very large current pulse passing through the Bottom Electrode Contact (BEC) in a very short time to melt part of the phase-change material and anneal. This part is converted into an amorphous phase by melting annealing, known as a Programmable region. The impedance between the top electrode and the bottom electrode is effectively increased by the phase-change materials in series with the crystalline phase region. The conversion to crystalline phase requires a medium current pulse to pass through the lower electrode contact heating program-controlled zone at a temperature between the critical temperature of crystallization and the critical temperature of melting for a long time. The state of the programmed region can be read by measuring the impedance of the storage unit. This reading requires that the current flowing through the storage unit be small enough to avoid affecting the current state of the device. The properties of PHASE change materials directly determine the performance of phase change memory. Currently, sulfur compounds (Chalcogenide), such as Ge2Sb2Te5(GST), have been widely studied. The crystallization time may be less than 100ns. The important applications of plasma cleaning machine etching in the graphics of phase change memory storage unit include: plasma cleaning machine etching of lower electrode contact hole and phase change material (GST) plasma cleaning machine etching.

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Application of plasma Cleaning Machine process in PBGA

Application of plasma Cleaning Machine process in PBGA

The key preconditions for the bonding process of microelectronic packaging technology are small surface roughness and small contact Angle. In particular, the complex package structure, such as plastic sealed welded ball array (PBGA) package and laminated package structure. PBGA packaging and extension technology is widely used due to its high installation and fixed efficiency and good thermoelectric properties. In the application of PBGA, one of the main problems of plasma cleaning machine is the interface stripping, such as the interface between the chip/plastic sealant and the substrate/plastic sealant. The PBGA package structure is more complex than traditional peripheral lead frame packages, such as the plastic quadrangle flat package (PQFP). In order to avoid peeling, the multilayer interface should have high adhesion strength. Usually the stripping occurs first at the edge of the chip, and within a short period of time, under stress, it expands inward. When the adhesion between the two surfaces disappears, the wafer welding point is directly controlled by the thermal mismatch stress between the chip and the organic substrate. The electrical failure is caused by solder fatigue and cracks after peeling. Plasma cleaning machine is used for cleaning, argon, oxygen plasma gas, more widely used is containing argon oxygen CF4 gas, cleaning effect is better. Plasma cleaning of the substrate improves the peel resistance prior to the adhesion and molding processes in the PBGA. After plasma cleaning, pressure welding reliability is greatly improved.

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