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Effects of silicon and germanium groove interface etched by plasma Cleaning machine equipment on the shape of Sigma groove and the growth of silicon and germanium epitaxy

Effects of silicon and germanium groove interface etched by plasma Cleaning machine equipment on the shape of Sigma groove and the growth of silicon and germanium epitaxy

It is well known that a large number of polymer by-products are produced during the dry etching of silicon in plasma cleaning machine equipment. The total amount of reaction in the intensive area of the pattern is large, so the by-products are easy to aggregate. In the graphics silicon wafer experiment, the thick etching by-products in the dense area of the graphics lead to the shallow depth compared with the sparse area of the graphics. Such depth differences become more pronounced when the TMAH is embedded, and even prevent the formation of normal-shaped Sigma silicon grooves. This is because the plasma cleaning machine equipment etching post-treatment process requires a clean silicon interface to do the wet etching to form the Sigma silicon groove. This difference in depth can be induced by the Presence of Cl2 in the etching gas. Compared with other gases (such as HBr), the by-products formed by chlorine and silicon have better gasification, which can effectively reduce the deposition of etching by-products and improve the etching load. Experimental results show that the addition of Cl2 is very effective for improving the depth difference. By introducing Cl, the depth difference caused by this pattern can be improved by 60%. On the other hand, prior to the introduction of Cl2, subsequent processing processes often fail to form normal Sigmoid silicon grooving, which can be solved after the introduction of Cl2.   On the other hand, wet cleaning after dry etching of plasma cleaning machine also plays an important role in the formation of sigma silicon groove. The silicon oxide growing on the silicon groove surface will hinder the subsequent ammonium tetramethyl hydroxide treatment, leading to the failure of the formation of sigma silicon groove. In IC manufacturing, dilute hydrofluoric acid is usually used to remove the silicon oxide, ensuring that there is no silicon oxide or other contamination on the silicon surface. By adjusting the process time of hydrofluoric acid, the depth difference of sigma silicon groove with different graphics is greatly improved. All experiments were based on the same dry etching and ashing processes. When the amount of diluted hydrofluoric acid exceeds a certain amount, the depth difference of the Sigma groove can be controlled at a lower level. However, excessive hydrofluoric acid cleaning will remove too much shallow trench isolation silica, resulting in device isolation performance degradation. Therefore, both the cleaning effect of silicon trench and the loss of silicon oxide in shallow trench should be taken into account in the use of hydrofluoric acid.   The epitaxial growth of germanium silicon is very sensitive to the surface properties of silicon groove, and it is easy to form various epitaxial defects. So it is very important to choose the ashing process after dry etching of silicon trench plasma cleaning machine. In the ashing process, not only the residual photoresist is removed, but also the pure silicon surface is obtained to facilitate the epitaxial growth of germanium silicon. The podcasting process consists of oxidized podcasting, low-hydrogen hybrid gas (nitrogen hydrogen gas containing 4% hydrogen) podcasting, and high-hydrogen hybrid gas (hydrogen content greater than 20%) podcasting. The low hydrogen gas mixture ashing process can effectively reduce the photoresist and the residue of etching by-products, but the epitaxial growth defects are not significantly improved, because the photoresist and etching by-products are not the main causes of epitaxial defects. It has been reported in the literature that the Si-C bond is the main cause of the epitaxial defect. Carbon atoms come from photoresist and etching gases and are injected into the silicon during etching. In the process of plasma etching in the plasma cleaning machine, the carbon reacts with the volume silicon or the silicon chloride on the side wall to form the SI-C bond. Therefore, it is necessary to find a way to remove si-C bond effectively to improve the epitaxial defects of germanium silicon. Compared with the low hydroashing process, the high hydroashing process can remove the Si-C bond on the silicon groove surface more effectively, so as to improve the silicon and germanium epitaxial defects. The oxidizing ashing process of plasma cleaning machine can also improve the epitaxial defects on the basis of increasing the amount of oxidation. However, such a process will form a thicker silicon oxide layer on the surface of the trench. As mentioned above, the process of removing the silica layer produced by the ashing will also cause the damage of the shallow trench isolation silica layer, which will affect the device performance. Therefore, the oxidized ashing process is not applicable to the germanium silicon process.

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Etching of plasma surface cleaning machine side wall

Etching of plasma surface cleaning machine side wall

Generally, tetrafluoride (CF4) is used as the Main Etch step for the etching of the side wall of the plasma surface cleaning machine. The main etching step etches off the primary oxide layer on the surface of the Si3N4 film and the si3N4 film of most thickness. By adjusting the pressure and power of the etching chamber, the anisotropic etching of the main etching step can be controlled to form the side wall. However, there is no selective ratio between silicon nitride and silicon oxide at the bottom in the main etching step. If not controlled, it will cause damage to the body silicon substrate at the bottom. Therefore, the endpoint monitoring of the main etching step on the side wall of the plasma surface cleaning machine will immediately stop the etching and switch to the etching step.   The silicon nitride film remaining in the main etching step was etched by the over-etching step, and stopped on the silicon oxide film at the same time, so as to prevent damage to the underlying silicon substrate. CH3F or CH2F2 and O2 gas are usually used in the over-etching process. CH3F gas into CHx in plasma and f. + h. bombarding ions can interrupt Si - O keys, then provided to CFx groups react with Si can be volatile by-products formation, but in the surface of the plasma cleaning machine CH3F F ion in plasma concentration is low, CHx easily and - О - Si - reaction, formation - Si - O - CHx.   The polymer is thinner on silicon nitride because the Si-N bond has a much lower bond energy than the Si-O bond, so the Si-N bond is easily broken. As it is an exothermic reaction, CHx can easily bond with -Si-N to produce ·CN+·H. Therefore, the etching reaction of plasma surface cleaning machine is very active on silicon nitride. On the contrary, a thick polymer is formed on the silicon oxide film layer, which prevents the further reaction. In general, a selection ratio higher than 10 can be obtained through process optimization. Table 3.8 lists the etching rate, selection ratio and uniformity of the dielectric layer and silicon under different carbon-fluorine ratio conditions. The width and height of the side wall are mainly determined by the thickness of the deposited film and the degree of etching on the plasma surface cleaning machine.

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Advanced side wall etching technology of plasma flame machine

Advanced side wall etching technology of plasma flame machine

Conventional silicon nitride side wall plasma flame machine plasma etching improves selectivity by using high hydrogen fluorocarbon gas and achieves anisotropy by increasing ion bombardment. When the lateral wall film and the oxide stop layer are thicker, the effect is not obvious. But in some side SO Ⅰ etching, sidewall etching stop directly on silicon or germanium silicon material of the channel. The damage of channel material needs to be strictly controlled to a certain extent. Beyond a certain limit, the damage will seriously affect the performance of the device. At present, even with low ionic energy, the plasma electron temperature can only be controlled at 20eV on the plasma flame etching machine used by traditional industry. Germanium and silicon matrix materials were still damaged up to 15Å by using the optimized side wall etching process with CH3F gas containing 50% over-etching amount.   To reduce the damage of matrix material, it is necessary to further reduce the electron temperature to reduce the plasma electric potential and the ion energy. At present, the effective methods include high pressure mode and synchronous pulse plasma mode. By adjusting the duty ratio in pulse mode, the electron temperature can be reduced. The synchro pulsed plasma of plasma flame machine uses the rf of source power and the RF of offset power on and off, which makes the stability of synchro pulse more difficult to control, and the etching rate also drops sharply. In plasma with low electron temperature, the wide scattering of ions reduces the directivity of ions and at the same time weakens the directivity of etching, which is difficult to accept for the etching of side wall with accurate width control. Similarly, in the high pressure etching mode, in addition to the ion scattering problem caused by the electron temperature decrease, the longer gas residence time will make the etching uniformity worse, which needs to be solved together with other complex uniformity improvement methods.   In order to solve the problem of the previously discussed, meet the needs of demanding as feature sizes for miniature, plasma flame machine can use a similar atomic layer etching method, namely, the first to use H or He, and so on plasma processing on the surface of a silicon nitride, change the nature of the surface film layer, and then use the wet etching, such as, with a very dilute solution of hydrofluoric acid degeneration of surface film layer selectively be removed. As H is a light ion, it has almost no etching on the silicon nitride film compared with He, so it is used for the film treatment. In capacitor-coupled plasma etching machine, hydrogen concentration and injection depth of si3N4 surface film can be adjusted by modulating bias power and injection time. In the silicon nitride film, the concentration of H is closely related to the subsequent hydrofluoric acid etching rate. By controlling the concentration of hydrogen in the si3N4 film, the selective ratio of etching between the altered si3N4 film and the bulk si3N4 film was achieved. When the plasma flame machine etching stops in the side wall etching of germanium silicon material, the atom-like layer etching method can be used to control the silicon storage loss within 6Å.

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Market Prospect of plasma Cleaning Machine

Market Prospect of plasma Cleaning Machine

Plasma cleaning machine is an equipment that uses the properties of plasma active components for surface treatment of samples. In recent years, with the rapid development of national economy, the plasma cleaning machine industry has also been developed rapidly. Industry production and sales scale are on the rise, the plasma cleaning machine market prospects.   According to a report by the German Ministry of Science and Education, plasma processing equipment alone will generate 27 billion euros (about 300 billion yuan) worth of output globally in 2019. If processing services, consulting and derivatives were included, the world's GDP would be €500 billion; today it is worth several times that.   The plasma cleaning machine mainly uses the high frequency in the radio wave section to produce plasma, which can not discriminate the object processing and clean the shape of the object, so as to achieve the function of cleaning the object. Compared with other similar surface treatment equipment, the plasma cleaning machine has better cleaning effect and can improve the overall treatment efficiency. And in the context of global attention to environmental protection, plasma cleaning machine can avoid the use of trichloroethane and other harmful solvents, to avoid the generation of harmful pollutants, so as to achieve green environmental protection effect.   Plasma cleaning machine products are various, involving rubber, automobile, electronics, mobile phones, medical equipment, textile fiber, new energy and other fields. Plasma-cleaning machine is used in rubber industry for surface treatment of materials, which can make the surface of materials be cleaned effectively and form active layer at the same time, so that the treatment effect is good, the efficiency is high and the operation cost is low. In textile fiber industry, it is mainly used for non-woven matrix surface treatment, so that non-woven fabric to achieve efficient printing, bonding and other effects.   Throughout the development of plasma cleaning machine equipment in our country at this stage, the development of the whole industry is relatively stable, the total output value of the industry has maintained the trend of continuous growth. And in some fields, domestic plasma cleaning machine is gradually replacing imported equipment, foreign market output value is higher than the domestic market, but the domestic market development space is larger, broad application prospects.   In such a development trend, such as Shenzhen Cheng Feng Zhi Make Co., LTD., a group of professional plasma cleaning equipment research and development, production and sales of well-known enterprises, plasma cleaning equipment team is also growing. At the same time, domestic plasma cleaning machine production enterprises are also constantly strengthening technological innovation, innovation, product performance gradually reached the foreign level. Domestic plasma cleaning machine in the import of plasma cleaning machine industry market has gained, with the continuous improvement of product performance and technology upgrade, the domestic plasma cleaning machine production enterprise market share increased year by year. It is a good development trend for the plasma cleaning machine market in China.

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Influence of etching on the side wall of plasma cleaning equipment on devices

Influence of etching on the side wall of plasma cleaning equipment on devices

The width of offset side wall of plasma cleaning equipment has an important effect on device performance. The direct effect is that the source leakage resistor (RSD) under the sidewall is closely related to the width of the sidewall. When the channel resistance decreases greatly due to the reduction of the gate length, the parasitic resistance of the source leakage zone becomes an important part of the overall resistance of the device. Too narrow offset side wall will result in high overlapped capacitance and worsen short channel effect. Too wide offset side wall, will make the overlap capacitance is small, will cause the drive current drop. At the same time, the time delay decreases with the increase of the offset side wall width, but deteriorates after reaching a certain scale. Therefore, the width of the offset side wall should be carefully optimized to ensure the optimal device performance.   In the previous technology process of 90nm, the Capacity Coupled Plasma (CCP) medium etching machine was mainly used to etching the offset side wall. This kind of equipment belongs to the low density plasma equipment working under high pressure, and the etching uniformity and process stability are relatively poor. At the same time, due to the directivity of ion divergence, the consistency of sidewall Angle is difficult to control. Thus, the Inductively Coupled Plasma (ICP) high-density Plasma devices previously used for silicon etching are increasingly being used for silicon nitride side wall etching. Because the inductively coupled plasma device can work in the low pressure range, ion directivity is good, less scattering. At the same time, the gas retention time in the cavity is short and the etching uniformity is good. In addition, the cavity predeposition function is used in the etching process, that is, a thin film is deposited on the cavity before each chip is etched, and the thin film on the wall of the cavity is removed after etching. This ensures the consistency of the cavity environment and greatly improves the stability of etching process. Inductively coupled plasma cleaning equipment has better control over the shape of offset side wall.   The evenness of offset wall width of inductively coupled devices is much better than that of capacitive coupled devices. It is found that the difference of the width of the side wall of the inductively coupled etching equipment is much smaller than that of the capacitance-coupled etching equipment by evaluating the side wall with the difference of the width of the middle wall and the width of the bottom wall in the tem photographs. It can be seen that the etch uniformity and the control ability to the side wall shape of inductively coupled plasma cleaning equipment are far better than that of capacitive coupling equipment. It is because of good offset wall width uniformity and lateral wall shape control; This results in good transistor uniformity. This point can be clearly verified by the yield loss from the ring oscillator. The yield loss of the ring oscillator is greatly reduced by inductively coupled etching in plasma cleaning equipment, and the yield is greatly increased.   In the process of plasma cleaning equipment side wall etching, in addition to uniformity, Top Loss is also an important parameter of side wall etching. Less top height loss will affect the metallization thickness of polysilicon gate and increase the resistance value of metal gate. More top height loss will affect the protection of polysilicon pseudo-gate in the post-metal gate process.

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Tips for buying wide-width plasma Cleaning Machine

Tips for buying wide-width plasma Cleaning Machine

Wide-width plasma cleaning machine belongs to one of the process equipment, as a result of its unit price is higher, different from general consumer goods, so before the purchase of course to weigh in many aspects. It is well known that plasma surface treatment has many differences and advantages compared with other surface treatment methods. Plasma surface treatment is to ionize conductive gas into plasma, and to carry out surface treatment of materials, so as to achieve the purpose of cleaning, activation, etching and coating. Wide - width plasma cleaning machine is also a specific application of plasma surface treatment.   In order to choose the right wide-width plasma cleaning machine to buy, or need to be analyzed from the following aspects:   I. Analysis of cleaning requirements: 1. Select the type of plasma cleaning machine: According to the characteristics and requirements of the sample you will be dealing with, such as product form, product material, treatment temperature, time, yield requirements, treatment speed, etc., you need to consider the actual atmospheric plasma equipment and vacuum series test results.   2. Select the proper cleaning method: Through the analysis of cleaning needs, choose the right way of cleaning. If the treatment area is the surface border or local area, atmospheric low-temperature jet plasma cleaning and wide-width plasma equipment cleaning are selected. If the processing area is the surface of complex structure, or the processing area is uniform and error-free for comprehensive cleaning, then choose the wide-width vacuum plasma cleaning machine.   3. Choose well-known brands: In the aspect of wide-width plasma cleaning machine, the application technology of developed countries has a certain history and has been widely used, the plasma cleaning products of developed countries have been quite mature. China's plasma cleaning machine industry is in the stage of rapid development, some product quality and technical level has been comparable with the European and American countries. In order to ensure the long-term normal use of plasma cleaning machine, to achieve the expected effect of use, it is recommended that users choose well-known brands. In recent years, the gap between domestic and imported brands has been narrowed, and the plasma equipment independently researched and developed in China has also been greatly improved, and the quality and technology can better meet the processing requirements.   Ii. Analysis of the product and its effect: 1. Evaluate the product quality, technical level and after-sales service of the plasma cleaning machine brand: Choose enterprises with relatively professional and perfect solutions; Whether the product has obvious advantages; Wide-width plasma cleaning machine can also be divided into mechanical part and electronic circuit part, these parts of the technical requirements are higher. After sale is also an important link, this link suggests that we choose the manufacturer that has quality assurance.   2. Characteristics and structural differences of plasma cleaning machine: The structure of the plasma cleaning machine is mainly composed of two parts: one is the plasma generator, which is composed of integrated circuit, operation control, plasma generation power supply, air source treatment and safety protection. The invention also includes a plasma processing device comprising an excitation electrode, an excitation gas path, etc.   3. Evaluation of plasma cleaning effect: Contact Angle, Dyne pen, surface energy testing ink and other methods are mostly used. Contact Angle tester is a commonly used test method to evaluate the plasma cleaning effect at present, and its test data has high repeatability and stability. By using the optical surface contour method, a certain amount of liquid droplets are dropped on the surface of the sample, and the contact Angle is quantified. The smaller the contact Angle is, the better the cleaning effect will be. Iii. Analysis of price influencing Factors As for the purchase price of equipment, it is the result of the influence of a comprehensive factor, as well as the embodiment of the enterprise's technology and strength. Whether it is worth it depends on its value to us and how much benefit it brings to us. General wide atmospheric pressure plasma equipment compared to low-pressure vacuum plasma equipment, the price has more advantages, or according to your specific circumstances to choose.

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