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Hydrogen plasma treatment technology of plasma cleaner removes carbon and oxygen from SiC surface contaminants
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24 Mar,2022
Hydrogen plasma treatment technology of plasma cleaner removes carbon and oxygen from SiC surface contaminants:
SiC material is the third-generation semiconductor material, which has the characteristics of high critical breakdown electric field, high thermal conductivity, and high carrier saturation drift speed. The excellent performance of high power and low loss achieved is the frontier direction of high-end semiconductor power devices.
However, the conventional wet-processed SiC surface has some disadvantages such as residual C impurities and the surface is easily oxidized, which makes it difficult to form an excellent ohmic contact and a low-interface MOS structure on SiC, which seriously affects the performance of power devices. performance. The plasma cleaner plasma enhances metal organics, and the chemical vapor deposition system can generate low-energy ions and high-ionization, high-concentration, high-activation, and high-purity hydrogen plasma at low temperatures, making it possible to remove C or OH- and other impurities at low temperatures.
From the RHEED images after wet cleaning and plasma cleaning by plasma cleaning machine, we found that the wet-processed SiC surface was dotted, which indicated that the wet-processed SiC surface was uneven and had local protrusions. The plasma-processed RHEED image is streaky, indicating a very flat surface.
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