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The difference between different frequency excitation plasma of plasma processor

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11 Mar,2021

The difference between different frequency excitation plasma of plasma processor:
The density and excitation frequency of plasma are as follows:
Nc = 1.2425 x 108 v2
Where, Nc is plasma density (cm-3) and V is excitation frequency (Hz). There are three common excitation frequencies of plasma: ultrasonic plasma excitation frequency is 40kHz, RF plasma processor plasma excitation frequency is 13.56MHz, microwave plasma excitation frequency is 2.45GHz.

CRF plasma of plasma processor
Various plasmas produce different self-bias voltages. The self-bias voltage of ultrasonic plasma is about 1000V, that of RF plasma processor is about 250V, and that of microwave plasma is very low, only dozens of volts. Moreover, the three kinds of plasma have different mechanisms of action.


The reaction of ultrasonic plasma is physical reaction, the reaction of radio frequency plasma processor plasma is physical and chemical reaction, the reaction of microwave plasma is chemical reaction. Because of the great influence of ultrasonic plasma on the surface to be cleaned, RF plasma cleaning and microwave plasma cleaning are mostly used in the actual production of semiconductor cleaning activation bonding.

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