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Brief Introduction of ultra-low temperature plasma etching technology for surface treatment of plasma Cleaning Machine
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28 Dec,2020
Brief Introduction of ultra-low temperature plasma etching technology for surface treatment of plasma Cleaning Machine:
Plasma etching is defined as the plasma etching process that takes place at -100℃ or below, with liquid nitrogen or liquid helium as the cooling source and sulfur hexafluoride gas and oxygen (SF6/O2) as the etching source.
The low temperature etching method of plasma cleaning machine surface processor originates from the requirement of large aspect ratio silicon structure etching and is mainly used to form the structure of silicon material with maximum aspect ratio. This structure is widely used in micro-electro-mechanical System (MEMS) front process and Through Silicon Vias (TSV) encapsulated in the rear segment.
In recent years, the study found that the Plasma cleaning machine processor on the surface of Low temperature Plasma etching structure can not only needed for the formation of a special material, at the same time can also be produced in the process of etching reduce Plasma Damage (Plasma Induced Damage, PID), which can reduce accordingly after a period of semiconductor etching process of Low dielectric constant (Low - k Damage) material injury.
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