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Introduction of new resistive memory and the application of plasma etching in plasma Cleaning machine
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Published on:
26 Dec,2020
Introduction of new resistive memory and the application of plasma etching in plasma Cleaning machine:
Resistance changing Memory (Resistive Random Access Memory, RRAM) is one of the fast-growing non-volatile Memory, its storage mechanism and material is multivariate. The extensive use of metal and metal oxides means that the magnetotunneling metal material plasma cleaning machine etching problem will also be faced in the process of the graphics of resistive memory.
However, the storage mechanism of the RMS determines that the upper and lower electrodes of the RMS can adopt the same materials compatible with the logical process, thus greatly reducing the complexity and cost of r&d and mass production. The upper and lower electrodes (BE, Metal C, Metal D) and the resistive layer are all materials that will BE used in the logical back-end process. HfO2, TiN, Ti and W of the resistent layer are commonly used materials in logic process without cross contamination.
At present, RIE/ICP etching of plasma cleaning machine is still mostly used in the resistance memory, which is faced with problems such as too inclined etching profile of memory unit and serious lateral corrosion after etching metal electrode. Further progress should be made with subsequent process optimizations (power pulses, etc.) or the introduction of new reaction gases. Neutral beam etching (NBE) of plasma cleaning machine, which is unique in magnetic tunnel junction etching, is more inclined to form metal oxides in RRAM.
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