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Low-temperature plasma etching for plasma cleaning machine

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Published on:

24 Dec,2020

Low-temperature plasma etching for plasma cleaning machine:

In the past few decades, semiconductor technology, represented by very large scale integrated circuits (ULSI), has been following Moore's Law with rapid development at technological nodes approximately every two years. Jack Kilby's 1958 INTEGRATED circuit had just five components, while Intel's mass-produced 10nm logic chip contained 100.8 million transistors on a 1mm2 chip. The development of semiconductor technology and the reduction of cost are inseparable from the increase of product circle size. The size of wafers has grown from 50mm to 300mm over the past 50 years, and may grow further to 450mm. The process of forming a chip from a single cut silicon wafer is complex.

Low-temperature plasma etching

Lithography, Plasma Etch, thin film deposition (PVD, CV), chemical machinery research (CMP), ion implantation (1MP), etc. Plasma etching in plasma cleaning machine is one of the important processes in semiconductor production. Its importance and challenge have become increasingly prominent with the development of semiconductor technology. A prominent feature of low-temperature plasma etching is that the span of space scale and time scale is quite large, which requires micro machining operation in angstrom (A) on A piece of product circle with A diameter of 300mm. The timescale also ranges from nanoseconds in electronic response time to the macroscopic minutes needed for the entire wafer to be etched. This span of time and space can well reflect the challenges faced by vLSI manufacturing and plasma etching technology of plasma cleaning machine.

The low temperature plasma technology of plasma cleaning machine has also been widely used in photoresist modification, material surface treatment, photoresist friendly, ion implantation and plasma enhanced chemical meteorological deposition technology.

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