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Plasma silicon wafer cleaning machine ion energy density

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Published on:

03 Nov,2020

Plasma silicon wafer cleaning machine ion energy density:

 

Energy density refers to the amount of energy stored in a certain space or mass. Therefore, energy density is divided into mass energy density and volumetric energy maximum density. If the density is uniformly distributed in mass or space then the mass energy density is the total energy divided by the total mass of the matter that has that energy; The volumetric energy density of a plasma silicon wafer cleaner is the total energy divided by the volume of the space in which the energy exists. If the density is not uniformly distributed in mass or in space then we have to solve it according to the actual density distribution.

 

In the plasma silicon wafer cleaning machine, the main factors affecting the plasma energy density are the raw material gas flow rate F and the plasma injection power P. Feed gas flow rate is affected in the reaction system of active particle density and one of the main factors of the collision probability, plasma silicon wafer cleaning machine plasma injection power is generated in the plasma of various active particles (high energy electron, methyl radical, etc.) of reactive oxygen species, energy source, both the dynamic synergy effects available energy density Ed (kJ/mol) description.

 

Ed=P/F (1-20)

 

Where, Ed is the energy density (kJ/mol); P is plasma power (kJ/s); F is the molar flow rate of raw gas (mol/s).

Plasma silicon wafer cleaning machine ion energy density

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