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Influence of through-hole etching process parameters on key dimensions, contour patterns and electrical properties of atmospheric plasma cleaning machine

Influence of through-hole etching process parameters on key dimensions, contour patterns and electrical properties of atmospheric plasma cleaning machine

The film material composition of the typical copper-through-hole atmospheric plasma cleaning machine etching process is composed of etching stop layer, interlayer dielectric layer, hard mask layer, anti-reflection coating and photoresist from bottom to top. The copper through hole etching process consists of four steps: the bottom anti-reflection layer and hard mask layer etching, main etching, over-etching and photoresist ashing. The bottom anti-reflection layer and the hard mask layer are etched by the atmospheric plasma cleaner using a combination of fluorine based gas and oxygen, such as CF4, CHF3, O2, to jointly complete the etching of the organic anti-reflection coating and the hard mask layer. Because hard mask layer is usually a silicon oxide, with CF4 and CHF3 common etching polymer can be created, and accumulated in the protective layer and interlayer dielectric layer on the lateral wall of, if let polymer deposition on the wall, the subsequent etching the abnormal graphics to transfer to the bottom of the hole, become a through hole at the top to the bottom of the stripes, increased the hole wall roughness, seriously affected the subsequent electroplating copper filling integrity, and, as a defect, prone to electromigration (EM), in turn, affects the reliability of the circuit. Therefore, in order to avoid the formation of such stripes, the deposition of polymer in the side wall of the interlayer protective layer must be strictly controlled during the etching of the bottom anti-reflective coating. Sun wu, etc by against reflector etching process parameters were studied, including atmospheric plasma cleaning machine CHF3 / CF4 etching gas ratio, plasma power and etching process time and so on, the results of the study showed CHF3 / CF4 ratio is lower, the stripe is less, this is because the more CF4 reduces the etching gas C/F ratio, thus can reduce the production of polymer. Low plasma power will significantly improve the striped phenomenon, this is due to the low power can reduce the concentration of in vitro, thereby directly reducing the generation of polymer, at the same time, the low power also weakened the atmospheric plasma cleaning machine plasma physics bombardment of photoresist, which in turn reduces the [C] content in plasma, from another Angle to reduce the generation of polymer. In addition, the shorter etching process time reduces the total amount of polymer, thus improving the striation phenomenon.   In addition, there is another mechanism for the formation of streaks. High source power and high bias power are usually used in the main etching step of the through-hole to etch the through-hole. High source power increases plasma concentration, and high bias power produces high-energy physical bombardment, which will accelerate the consumption of photoresist, especially in the area with dense graphics. Under high bias power, the consumption of photoresist will be faster. Whenever the photoresist is exhausted before the end of all the through hole etching process, the plasma of the atmospheric plasma cleaning machine will directly bombage the interlayer protective layer and interlayer dielectric material. With the gradual reduction of the photoresist mask, it is no longer able to protect the underlying material well, which leads to the phenomenon of a second stripe, which usually exists only at the top of the through-hole, and in bad cases, the bridging of the through-hole may occur.   To avoid the second stripe, more polymers need to be produced in the main etching step and deposited on the surface of the photoresist to reduce the loss of the photoresist, i.e. the selection ratio of photoresist needs to be improved. Therefore, the main etching step usually uses the etching gas with a relatively high C/F ratio, which is more likely to produce polymers, such as C4F8, C4F6, CH2F2, etc. Through the study of the process parameters of the main etching step, the results show that the higher the CxFy/O2 ratio is, the less the second fringe is. This is because the increase of CxFy will produce a large number of polymers. Reduced at the same time, the dosage of O2, makes the reaction of polymer by dissociation, removal rate will be reduced greatly, so the accumulation of the surface of the photoresist polymer will increase, can well protect the dielectric material bombarded by atmospheric plasma cleaning machine plasma or chemical etching, so as to avoid the phenomenon of the second kind of stripes. In addition, the bias of low power/source power can also improve the ratio of the second stripe phenomenon, because of the bias power main control is in the plasma ion acceleration, the source of power control is the concentration of plasma, a low bias power can reduce the ion bombardment energy, and the source of the high power will i

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Application of atmospheric Atmospheric Plasma Cleaning Machine in Nylon dyeing

Application of atmospheric Atmospheric Plasma Cleaning Machine in Nylon dyeing

Nylon fibers were treated with atmospheric pressure plasma cleaning machine and dyed with disperse dyes and fluorescent dyes before and after treatment. The results showed that plasma treatment could increase the surface roughness of fiber, increase the dyeing depth of fiber, improve the dyeing property of nylon fiber, and have no obvious effect on the fiber strength. Atmospheric pressure plasma cleaning machine technology is increasingly widely used in textile, can be used for fabric sizing, desizing, hemp degumming, wool anti felt shrinkage, synthetic fiber hydrophilic treatment, high performance fiber bond enhancement and other aspects. Atmospheric pressure plasma cleaning function can effectively improve the surface properties of nylon fiber and polymer, mainly because oxygen low pressure or atmospheric pressure plasma can introduce oxygen elements into the fiber surface in the form of hydroxyl and carboxyl groups, thus improving its hydrophilicity; Or because the tetrafluoride plasma can introduce fluorine-containing groups (-CF3, -CF2) into the fiber to form hydrophobic surface. The plasma treatment under atmospheric pressure reduces the vacuuming process, and the continuous treatment can be realized with relatively simple operation. In atmospheric plasma, the active substance oxidizes the oxygen, nitrogen and other elements in the air, and introduces it into the surface of nylon fiber, which increases the number of surface polarity genes and enhances the surface polarity, which is conducive to the adsorption and fixation of dyes. Plasma treatment on the surface of nylon fiber by atmospheric pressure plasma cleaner can improve the content of polar groups such as C-OH, C-OOH and C-NH2 on the surface of the fiber, improve the wettability of the fiber, accelerate the diffusion of dyes, increase the color depth of the fiber, and improve the color performance of the fiber to a certain extent. Plasma treatment can improve the diffusion rate, saturation and absorptivity of nylon fibers, that is, the dyeing properties of nylon fibers can be improved by atmospheric plasma treatment. Atmospheric plasma treatment, on the one hand, increases the smooth surface roughness of the fiber surface, enhances the hygroscopic properties of the fiber, is conducive to the adsorption of dye molecules on the fiber surface, and speeds up the diffusion rate of dye; In the process of atmospheric plasma treatment, nitrogen and oxygen elements in the gas enter the fiber surface in the form of hydroxyl, carboxyl, amino and so on, which increases the electronegativity of the fiber surface, which is conducive to the diffusion of dye molecules to the center of the fiber, making it fixed in the fiber interior, thus improving the dyeing rate of the fiber. Atmospheric pressure plasma cleaning machine to nylon fiber treatment almost no damage. The reason is that plasma treatment only modifies the surface layer of nylon fiber, which has no effect on the overall properties of the polymer, and the orientation and crystallization state of the fiber remain unchanged.

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Contact hole etching process for the lower electrode of phase change memory for plasma Surface processor

Contact hole etching process for the lower electrode of phase change memory for plasma Surface processor

The size of the "heater" in the storage unit of the PHASE-change memory is critical to the performance of the device, and the smaller size means that the lower electrode contact has a higher current density, higher heating efficiency, and a smaller area of the phase-change material. The structure and process flow of the knife-edge silicon nitride electrode contact with GST as phase change material, which can form the lower electrode contact with the size of less than 20nm along the direction of the position line. According to the cutting sequence of Titanium nitide in U-shaped groove, lithographic segmentation and plasma surface processor etched after etching in the contact hole of the lower electrode are two technological processes. The lithography segmentation process uses the distance between the two ends of the photoresist to define the segmentation zone. Then, the lower layer of the film is removed successively. The upper surface and side wall of the U-shaped groove are removed, and the bottom layer is also cut accordingly. The process is simple and the cost of the hood is low, but the limitations of lithography may lead to the Shortening of the Line End (LES), which can lead to lateral parietal titanium loss. When the graph is further miniaturized, the effect becomes more significant and even causes the graph to fail. The lithographic pattern of etching and cutting process is a complete straight line, and the bottom nitriding will not be cut, so it is necessary to add additional silicon nitride cutting process after etching by plasma surface processor of plasma cleaning machine with contact hole of the lower electrode. This method requires at least two masks, which is of high cost. The advantage is that the lithography process window is large, and the control ability of the size of the lower electrode contact along the direction of the word line is strong, which facilitates the further reduction of the size of the lower electrode contact. The requirements of the two processes for the etching of plasma surface processor in the plasma cleaning machine with lower electrode contact holes are appropriate contact size, vertical TI nitriding profile shape and no TI nitriding residue at the bottom of u-shaped groove. After the organic substrate in the trench is removed by the plasma surface treatment with the plasma cleaning machine, there are two schemes of isotropic and anisotropic plasma etching for the titanium nitride silicon oxide in the lower layer. If isotropic etching is adopted (such as high pressure strength, low rf power combined with high ratio CF4 for silicon oxide etching or high ratio Cl2 for titanium nitridation etching), the lithographic segmentation process can effectively ensure that there is no titanium nitridation residue at the side wall and bottom of the groove, but it also brings side effects such as oblique profile shape and serious CD loss. In addition to the above problems, there are titanium nitride and even silicon oxide residues on the side wall in the cutting method after the plasma surface processor etching in the plasma cleaning machine. After the etching time is prolonged, the residue is removed but the top of the titanium nitride is seriously damaged. If anisotropic etching is used (e.g., low pressure strength, high bias power combined with C4F8/Ar for silicon oxide etching or Cl2/N2 for titanium nitide etching), both processes have better CD loss and profile shape, with serious substrate material loss as a side effect. Organic substrate material are removed, the oxidation of anisotropic silicon etching will remove groove at the top, but at the bottom of the film in the lateral wall with residual, especially the corner if the silica/titanium nitride choice than below 15:1, the plasma cleaning machine plasma surface treatment machine increase etching time will open at the bottom of the titanium nitride cause severe loss of substrate materials. However, the plasma etching process of plasma surface processing machine with too high selection ratio will cause more inclined slope shape and the uniformity is more difficult to control. The two etching schemes have their own advantages and disadvantages. Because CD control is important for the further miniaturization of graphics and mass production, the industry tends to adopt the anisotropic etching scheme of plasma surface processor in plasma cleaning machine. Therefore, in order to resolve the conflict between titanium nitrite residue and selection ratio, a partial removal scheme of organic substrate was proposed. In this scheme, by controlling the opening time of organic substrate, enough organic matter is left in the trench to protect the titanium nitrite at the bottom, so as to avoid the conflict between the two demands of etching directivity and selection ratio. Therefore, CF4/CHF3, an etching formula with a low selec

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Plasma cleaner manufacturers to share the development of integrated circuits

Plasma cleaner manufacturers to share the development of integrated circuits

In 1958, the United States, Texas instruments, shows the start of the world's a piece of integrated circuit, wire connect five electronic components in, it marks the world into the era of integrated circuits, from now on, in 1959, Martin @ pull bell LABS (Martin Atalla) and the prosperous khan (Dawon Kahng) developed the first insulated gate field effect transistor (FET) their success factors is by controlling the surface state makes the influence of electric field can penetrate into the semiconductor materials. In studying thermally growing silica, they found that in the structure of the metal layer (M), oxide layer (O insulation), and silicon layer (S semiconductor), these "surface states" are greatly reduced at the junction between silicon and its oxide. In this way, the applied electric field can affect the silicon layer through the oxide layer, hence the name MOS. The research was halted because the original MOS devices were slow and failed to solve the problems faced by telephone devices. But researchers at Fairchild semiconductor and RCA recognize the advantages of MOS devices. In the 1960s, Karl Nininger and Charles Meuller built MOS transistors at Radio Corporation of America. Fairchild semiconductor's C.T.Ah built a MOS tetrode with a control electrode, and MOS transistors began to be used in the development of integrated circuit devices. 1962, Fred heyman (Fred Heiman) and Steven Stan (Steven Hofstein) in the radio corporation of America has made an experimental single chip integrated circuit composed of 16 transistor devices, in 1963, an article written by fairchild with research and development laboratory, along with Frank than lars (Frank Wanlass) in the paper show that, when in connection with complementary symmetry circuit configuration and n - p - channel is the channel of MOS transistor to form the logic circuit (today called CMOS, complementary field effect tube), The power consumption of this circuit is close to zero. This invention was patented by Frank Van Las. CMOS technology laid the foundation for low-power integrated circuits and became the mainstream production technology of digital integrated circuits today. In 1963, in defining and developing standard logic circuits, the transistor-transistor logic (TTL) integrated circuit was established as the standard logic module popular in the 1960s and 1970s due to its advantages in speed, cost and intensity. In 1964, hybrid microcircuits reached their peak production, and the multi-chip SLT packaging technology developed for the IBM Systems /360 computer series entered mass production. In the same year, commercial MOS integrated circuits were introduced, and General Microelectronics used the MOS process to achieve a higher level of integration than bipolar integrated circuits, and used the technology to create an original calculator chipset. In 1968, Federico Faggin and Tom Klein improved the reliability, speed, and package integration of MOS integrated circuits using a silicon gate structure instead of a metal gate. Fagg designed an original commercial silicon gate integrated circuit (Fairchild 3708). In 1971, Intel engineers created the first single-chip microprocessor (CPU), the I4004, to reduce the number of chips needed to design an arithmetic unit. In 1974, the integrated circuit used for LCD digital watches was the original product (SoC) that integrated the entire electronic system onto a single silicon wafer. In 1978, user programmable logic devices (programmable row logic) were born. In order to allow customers to quickly define logic functions, John Birkner and H.T.Cooer of Monocle developed easy-to-use programmable row logic (PAL) devices and software tools. In 1979, the monocle digital signal processor was born. Bell LABS single-chip digital signal processor DSP - 1 device structure makes the electronic switch system more perfect, in the same period, Texas instruments developed in programmable DSP1965 fairchild semiconductor r&d director Gordon Moore (Gordon Moore) had written an internal document, he compiled 5 groups of product development from 1959 to 1964 and with low cost of chip integration and a single device in graphs, then draw a line through these points. From this graph, Gordon Moore found that each new chip contained roughly twice the capacity of its predecessor, and that each new chip was produced within 18-24 months of the previous one. If this trend continues, computing power will rise exponentially relative to the time period. Moore's observation is now known as Moore's law. Over the next decade, he predicted, the number of devices on chips would double every year, reaching 6,500 by 1975. "For integrated circuits, cost-cutting is very attractive," he said. The cost advantage will continue to grow as technology advances to enable the integration of more and more circuit functions on a single chip. In 1975, has joined Intel Gordon M

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Chinese contributions to the development of plasma etching machines for low-temperature plasma cleaning Machines

Chinese contributions to the development of plasma etching machines for low-temperature plasma cleaning Machines

"Descendant of the dragon" has made great contribution to the development of plasma etching machine in the past half century. Silicon valley in 1999 published "hero" mentioned in the two and the low temperature plasma etching equipment development is closely related to the Chinese, one is Lin Jiebing Dr (David k., Lam) was born in China guangdong, in 1967 graduated from the engineering department of physics, university of Toronto after received the chemical engineering at the Massachusetts institute of technology (1970) and Ph.D. (1973) and increased in 1980, the United States, Lam semiconductor word, when the company went public in 1984 is already the world semiconductor equipment manufacturers. Dr Lin set out to come up with a model for wafer-wafer etching to ensure a more controlled etching environment. In the early stage of the development of the etching machine, he focused on the etching of relatively easy polysilicon materials with strategic vision, which enabled Pan Lin Semiconductor to rapidly develop the ICP of plasma cleaning machine with high quality, stability and high market share, and also bought time for the subsequent development of CCP machine. At the beginning of the 20th century, Panlin Semiconductor was consistently ranked among the top three in the market share of etching machines.   Another Silicon Valley hero associated with plasma etching is Dr. David Wang, born in Nanjing, China. He graduated from Central Plains University in Taiwan with a master's degree in chemical engineering in 1970 from the University of Utah and then a doctorate in materials science from the University of California, Berkeley. Since 1977, he has been engaged in plasma etching and chemical vapor bonding research at bell Laboratories headquarters in New Jersey. Then applied materials in the company President, chairman and CEO Jim Morgan (Jim Morgan) invited, joining applied materials inc. In 1980, over the next 25 years, there are hundreds of patents in its invention collection of single chip technology began to prototype the Smithsonian museum in Washington in 1993 water for a long time, this is displayed in the museum of Chinese invention design of machines. In the same room were bell telephones, Macintosh computers, and an IBM machine from the beginning. In 1983 he won the Semiconductor of the year award for the design of the etching machine for the Hexode-Type RIE plasma cleaning machine. The following year, he was awarded the SEMI Award by the Semiconductor Equipment and Materials Association for the development of plasma etching standards for the semiconductor industry. At the end of 1993 He was promoted to vice President of Applied Materials, managing global commercial operations. In 1994, he received the SEMI Lifetime Achievement Award for his contributions to the semiconductor equipment industry. Dr. Lin Jie-ping and Dr. Wang Ningguo have been selected to the American Silicon Engineering Association Hall of Fame.   Plasma etching equipment is the cornerstone to ensure high quality semiconductor products mass production. At the beginning of the 21st century, the mainstream plasma etchers were all foreign guns, and the U.S. government imposed export controls on semiconductor equipment in 1995, which meant that advanced etchers were not allowed to be sold on the mainland. Domestic plasma cleaning machine etching equipment manufacturing started in 2003, north of the North Microelectronics Company (founded in 2003) is committed to silicon etching machine development, south of the Micro semiconductor company (founded in 2004) began to build dielectric material etching machine. Both companies have many experts returning from overseas. Among them, Dr. Gerald Yin, CEO and chief executive officer of China Micro Semiconductor Company, graduated from The University of Science and Technology of China in his early years. He obtained his doctorate in physical chemistry from the University of California, Los Angeles in 1984 and now holds more than 70 foreign patents. The successful development of rainbow plasma etching equipment (dielectric etching) in the mid-to-late 1980s at Fanlin Semiconductor made the company one of the specialists in this field. In the early 1990s, I joined Applied Materials to be responsible for the r&d of plasma etching department of plasma cleaning machines. The products he develops or participates in account for approximately 50% of the plasma etching industry. His unique experience in the two major etching equipment manufacturers has enabled him to update and update the etching machines corresponding to different technology nodes. In 2004, he resigned as vice president of Applied Materials and returned to China to set up China Micro Semiconductor Equipment Co., LTD in Shanghai. CCP etching machine of plasma cleaning machine developed at present, with uHF and LOW frequency

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Brief Introduction of ultra-low temperature plasma etching technology for surface treatment of plasma Cleaning Machine

Brief Introduction of ultra-low temperature plasma etching technology for surface treatment of plasma Cleaning Machine

Plasma etching is defined as the plasma etching process that takes place at -100℃ or below, with liquid nitrogen or liquid helium as the cooling source and sulfur hexafluoride gas and oxygen (SF6/O2) as the etching source.   The low temperature etching method of plasma cleaning machine surface processor originates from the requirement of large aspect ratio silicon structure etching and is mainly used to form the structure of silicon material with maximum aspect ratio. This structure is widely used in micro-electro-mechanical System (MEMS) front process and Through Silicon Vias (TSV) encapsulated in the rear segment.   In recent years, the study found that the Plasma cleaning machine processor on the surface of Low temperature Plasma etching structure can not only needed for the formation of a special material, at the same time can also be produced in the process of etching reduce Plasma Damage (Plasma Induced Damage, PID), which can reduce accordingly after a period of semiconductor etching process of Low dielectric constant (Low - k Damage) material injury.

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