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Atmospheric plasma surface treatment equipment

Atmospheric plasma surface treatment equipment

In atmospheric plasma technology, compressed air or other gases are injected and ionized by high pressure excited gas at atmospheric pressure to become plasma. The plasma is ejected from the nozzle. Atmospheric plasma surface treatment equipment is the use of plasma nozzle containing active particles to activate and precision cleaning its material. In addition, the surface scattering of adhesive particles can be removed by accelerating the activation injection by gas. The process parameters such as the processing speed and the distance to the substrate surface will have different effects on the treatment results.   To make all kinds of plastics and other products, have better spraying, printing or bonding quality, product surface treatment is necessary. Conventional surface treatment processes include mechanical grinding, chemical solvent, flame, corona and other methods. Each of these technologies has its own technical advantages and characteristics, but there are some limitations in the process and application.   Atmospheric plasma treatment system process is a rapidly developing high-tech online surface treatment technology. Compared with traditional process, online treatment effect, operation safety, treatment cost, application adaptability and environmental protection have been significantly improved. Atmospheric plasma generation and action on the surface of the material to achieve the cleaning effect. First of all, what is plasma? Solid, liquid and gas are three common states of substances. The process of substances from solid to liquid and then to gas is a process of gradual increase of molecular energy from the microscopic level. As we continue to inject energy into the gas, the molecules in the gas move even faster, forming a new form of ions, free electrons, excited molecules, and high-energy molecules, known as the fourth "plasma" state of matter.   Atmospheric plasma surface treatment refers to the surface treatment of products produced by plasma under atmospheric pressure. Stable atmospheric plasma can be produced by plasma spray gun. In the working process, air or other process gas is introduced into the spray gun, and energy is injected through the high-frequency high-voltage flow to the front end of the spray gun, and the required plasma is ejected from the front end of the spray gun. The plasma obtained for electric neutral plasma, so the scope of application is very wide, not only can be used in plastic, also can be used in metal, glass and other materials processing, atmospheric plasma cleaning machine manufacturers manufacturing equipment can also be used to deal with mobile phone cover.   Plasma treatment has three main effects on the surface of materials: cleaning the surface, removing organic and inorganic pollutants; Activate the surface and increase the surface energy of the material; Eliminate static and so on. Plasma cleaning material surface can not only remove inorganic pollutants such as dust, but also decompose organic pollutants such as surface grease. The surface activation of plastic materials is mainly through the formation of new active functional groups on the surface of the materials. Plasma can also remove static electricity from the material surface.   Atmospheric plasma treatment technology has a wide range of applications, it can be used in a variety of adhesion, spraying, printing and other processes, plastic, metal or glass material surface treatment. The resulting clean and highly active surface makes bonding, spraying and printing easier, thus improving the quality of processing, reducing processing costs and increasing processing efficiency.

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Polysilicon gate etching in fin-type FET of plasma Surface Treatment instrument

Polysilicon gate etching in fin-type FET of plasma Surface Treatment instrument

FinFET still uses the dual-graphics method in the planar transistor at 28nm to define gate lines and line ends. Different from the planar transistor, FinFET is a THREE-DIMENSIONAL transistor, and the polysilicon gate is across the fin. This difference leads to the difference in the etching process of the plasma surface treatment instrument. The profile morphology after polycrystalline gate etching has great influence on the subsequent process. The morphology at the top and bottom of polysilicon will affect the growth performance of stress sige. An ideal profile etched by polysilicon plasma surface treatment instrument will have the residue of hard mask on the polysilicon. The profile of polysilicon is a very vertical morphology, which is the same as the key size of hard mask.   Lateral etching occurs in polysilicon etching. When the plasma surface treatment etching process has different etching selection ratio for hard mask and polysilicon, the key size of the top of polysilicon will be different from the hard mask. For example, when a polysilicon key size is greater than the critical size of hard mask, the bias side walls in the subsequent p-type Silicon germanium grooves (PMOS Silicon Recess, PSR) plasma surface treatment instrument etching will receive more consumption, once the bias side wall thickness is not enough to protect the top of the polycrystalline Silicon, Silicon germanium in subsequent epitaxial growth, there is a big chance to grow on top of the poly Silicon germanium epitaxial forming defects, cause device failure; When the key size of polysilicon is smaller than that of hardmask, the occurrence of such defects will be much less, which is beneficial to improve the yield. Similarly, when the polysilicon has relatively serious bottom length after etching, the offset side wall at the bottom will also suffer more consumption in PSR etching, which leads to silicon and germanium defects growing at the bottom of polysilicon in subsequent silicon and germanium epitaxy. When the effective height of the hard mask is not enough, silicon and germanium defects will also grow in the top polysilicon, so it is particularly important to control the etched profile morphology in the FinFET polysilicon.   As a THREE-DIMENSIONAL transistor, the channel factor must be considered in the etching of polysilicon. The fin itself is made of bulk silicon. When the plasma surface treatment instrument etches polysilicon, the loss of the fin itself still needs to be considered in spite of the protection of silicon oxide. In the etching process, the etching process is usually switched to the traditional high selection ratio HBr/O2 step when it is 200~300 from the top of the fin, and a lower bias power is required. Also because of the existence of three-dimensional fins of the top above the top part and the following partial etching of polysilicon gate environment is different, so in the process of the plasma surface treatment instrument etching to form ideal polysilicon gate section morphology, usually have high selectivity, soft landing steps into a few steps to achieve the goal of optimization of polysilicon section morphology. Since the epitaxy of the source drain is formed directly on the fin, this means that the fin loss in FinFET polysilicon etching becomes less important than that in planar substrate silicon etching. To ensure the subsequent epitaxial growth, the polysilicon in the corner where the fin intersects the gate needs to be cleaned, so from the perspective of device integration, fin loss is inevitable.

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Effects of silicon and germanium groove interface etched by plasma Cleaning machine equipment on the shape of Sigma groove and the growth of silicon and germanium epitaxy

Effects of silicon and germanium groove interface etched by plasma Cleaning machine equipment on the shape of Sigma groove and the growth of silicon and germanium epitaxy

It is well known that a large number of polymer by-products are produced during the dry etching of silicon in plasma cleaning machine equipment. The total amount of reaction in the intensive area of the pattern is large, so the by-products are easy to aggregate. In the graphics silicon wafer experiment, the thick etching by-products in the dense area of the graphics lead to the shallow depth compared with the sparse area of the graphics. Such depth differences become more pronounced when the TMAH is embedded, and even prevent the formation of normal-shaped Sigma silicon grooves. This is because the plasma cleaning machine equipment etching post-treatment process requires a clean silicon interface to do the wet etching to form the Sigma silicon groove. This difference in depth can be induced by the Presence of Cl2 in the etching gas. Compared with other gases (such as HBr), the by-products formed by chlorine and silicon have better gasification, which can effectively reduce the deposition of etching by-products and improve the etching load. Experimental results show that the addition of Cl2 is very effective for improving the depth difference. By introducing Cl, the depth difference caused by this pattern can be improved by 60%. On the other hand, prior to the introduction of Cl2, subsequent processing processes often fail to form normal Sigmoid silicon grooving, which can be solved after the introduction of Cl2.   On the other hand, wet cleaning after dry etching of plasma cleaning machine also plays an important role in the formation of sigma silicon groove. The silicon oxide growing on the silicon groove surface will hinder the subsequent ammonium tetramethyl hydroxide treatment, leading to the failure of the formation of sigma silicon groove. In IC manufacturing, dilute hydrofluoric acid is usually used to remove the silicon oxide, ensuring that there is no silicon oxide or other contamination on the silicon surface. By adjusting the process time of hydrofluoric acid, the depth difference of sigma silicon groove with different graphics is greatly improved. All experiments were based on the same dry etching and ashing processes. When the amount of diluted hydrofluoric acid exceeds a certain amount, the depth difference of the Sigma groove can be controlled at a lower level. However, excessive hydrofluoric acid cleaning will remove too much shallow trench isolation silica, resulting in device isolation performance degradation. Therefore, both the cleaning effect of silicon trench and the loss of silicon oxide in shallow trench should be taken into account in the use of hydrofluoric acid.   The epitaxial growth of germanium silicon is very sensitive to the surface properties of silicon groove, and it is easy to form various epitaxial defects. So it is very important to choose the ashing process after dry etching of silicon trench plasma cleaning machine. In the ashing process, not only the residual photoresist is removed, but also the pure silicon surface is obtained to facilitate the epitaxial growth of germanium silicon. The podcasting process consists of oxidized podcasting, low-hydrogen hybrid gas (nitrogen hydrogen gas containing 4% hydrogen) podcasting, and high-hydrogen hybrid gas (hydrogen content greater than 20%) podcasting. The low hydrogen gas mixture ashing process can effectively reduce the photoresist and the residue of etching by-products, but the epitaxial growth defects are not significantly improved, because the photoresist and etching by-products are not the main causes of epitaxial defects. It has been reported in the literature that the Si-C bond is the main cause of the epitaxial defect. Carbon atoms come from photoresist and etching gases and are injected into the silicon during etching. In the process of plasma etching in the plasma cleaning machine, the carbon reacts with the volume silicon or the silicon chloride on the side wall to form the SI-C bond. Therefore, it is necessary to find a way to remove si-C bond effectively to improve the epitaxial defects of germanium silicon. Compared with the low hydroashing process, the high hydroashing process can remove the Si-C bond on the silicon groove surface more effectively, so as to improve the silicon and germanium epitaxial defects. The oxidizing ashing process of plasma cleaning machine can also improve the epitaxial defects on the basis of increasing the amount of oxidation. However, such a process will form a thicker silicon oxide layer on the surface of the trench. As mentioned above, the process of removing the silica layer produced by the ashing will also cause the damage of the shallow trench isolation silica layer, which will affect the device performance. Therefore, the oxidized ashing process is not applicable to the germanium silicon process.

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Market Prospect of plasma Cleaning Machine

Market Prospect of plasma Cleaning Machine

Plasma cleaning machine is an equipment that uses the properties of plasma active components for surface treatment of samples. In recent years, with the rapid development of national economy, the plasma cleaning machine industry has also been developed rapidly. Industry production and sales scale are on the rise, the plasma cleaning machine market prospects.   According to a report by the German Ministry of Science and Education, plasma processing equipment alone will generate 27 billion euros (about 300 billion yuan) worth of output globally in 2019. If processing services, consulting and derivatives were included, the world's GDP would be €500 billion; today it is worth several times that.   The plasma cleaning machine mainly uses the high frequency in the radio wave section to produce plasma, which can not discriminate the object processing and clean the shape of the object, so as to achieve the function of cleaning the object. Compared with other similar surface treatment equipment, the plasma cleaning machine has better cleaning effect and can improve the overall treatment efficiency. And in the context of global attention to environmental protection, plasma cleaning machine can avoid the use of trichloroethane and other harmful solvents, to avoid the generation of harmful pollutants, so as to achieve green environmental protection effect.   Plasma cleaning machine products are various, involving rubber, automobile, electronics, mobile phones, medical equipment, textile fiber, new energy and other fields. Plasma-cleaning machine is used in rubber industry for surface treatment of materials, which can make the surface of materials be cleaned effectively and form active layer at the same time, so that the treatment effect is good, the efficiency is high and the operation cost is low. In textile fiber industry, it is mainly used for non-woven matrix surface treatment, so that non-woven fabric to achieve efficient printing, bonding and other effects.   Throughout the development of plasma cleaning machine equipment in our country at this stage, the development of the whole industry is relatively stable, the total output value of the industry has maintained the trend of continuous growth. And in some fields, domestic plasma cleaning machine is gradually replacing imported equipment, foreign market output value is higher than the domestic market, but the domestic market development space is larger, broad application prospects.   In such a development trend, such as Shenzhen Cheng Feng Zhi Make Co., LTD., a group of professional plasma cleaning equipment research and development, production and sales of well-known enterprises, plasma cleaning equipment team is also growing. At the same time, domestic plasma cleaning machine production enterprises are also constantly strengthening technological innovation, innovation, product performance gradually reached the foreign level. Domestic plasma cleaning machine in the import of plasma cleaning machine industry market has gained, with the continuous improvement of product performance and technology upgrade, the domestic plasma cleaning machine production enterprise market share increased year by year. It is a good development trend for the plasma cleaning machine market in China.

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Application of plasma device Stress Proximity technology in semiconductor Technology

Application of plasma device Stress Proximity technology in semiconductor Technology

Stress Proximity Technology (SPT) is a Technology widely used in advanced logic chip Technology in recent years. According to the technical principle, after the metalization of gate and source leakage zones, partial or complete side walls can be removed by means of plasma etching. The stress of subsequent deposited stress layer or double stress layer can be more effectively applied to the channel zone. Through stress proximity technology, the performance of NMOS can be improved by 3%. In the aspect of PMOS, the performance improvement is more obvious due to the introduction of stress proximity technology. With SiGe technology, stress proximity to the metal can improve performance by up to 40%.   The effect of the stress proximity technique is related to the periodic size or density of the gate. The performance of the dense gate circuit is improved by 28% after the introduction of stress proximity technology, which is more obvious compared with the 20% improvement of the sparse gate circuit. This is because in a dense gate circuit, the space between the gate and the gate is narrow, and the volume of the stress layer after deposition differs significantly before and after the introduction of stress proximity technology, while the volume of the stress layer is closely related to the stress layer.   The stress proximity etching methods are mainly divided into wet etching and dry etching of plasma equipment. During the plasma etching process, the metal silicides in the source leakage area are always exposed, and the metal silicides determine the resistance of the source leakage area. Therefore, the damage of metal silicide should be strictly controlled in the process of removing side wall of plasma equipment. Because the side walls are generally made of silicon nitride, the wet etching mainly uses hot phosphoric acid solution. Wet etching has the advantage of high selectivity of si3N4 to si3N4, which can control the damage of si3N4 well under the condition of high etching amount. At the same time, wet etching belongs to isotropic etching, which can effectively remove the side wall compared with the anisotropic etching of dry etching in plasma equipment. The disadvantage of wet etching is that the Particle defects of chemical containers are difficult to control.   Plasma equipment dry etching adopts high-density plasma equipment coupled with coils to etch silicon nitride side wall with heavy polymer gas plasma. The heavy polymer gases mainly include CH2F2 and CH3F, which are controlled with a certain amount of O2 gas to achieve the purpose of etching silicon nitride and stopping on the silicide. Plasma etching equipment CH2F2 / CH3F gas, on the surface of a silicon nitride polymer far less than the thickness of the silica or polymer is formed on the metal silicides, so in the surface of the silicon nitride, plasma etching reaction can continue equipment, while the metal silicide polymer thick, so the choice of higher than. However, due to the dissociation of a large number of F atoms, the plasma still has obvious damage to metal silicides. In comparison, the selection ratio of silicon nitride for dry etching in plasma equipment is smaller than that for wet etching.   The damage of silicide can be controlled by controlling the etching amount by controlling the process time. The more stress near the etching of plasma equipment, the more serious the damage and the higher the resistance value of the metal silicide. On the other hand, because the side wall is completely or partially removed, the depth-width ratio of subsequent filling is reduced, and the filling performance of the subsequent contact through hole stop layer and the interlayer dielectric layer is improved.

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Wide width plasma surface processor plasma Cleaning integrated circuit manufacturing

Wide width plasma surface processor plasma Cleaning integrated circuit manufacturing

As the volume of manufacturing integrated circuits decreases, the size of lead bonding pads decreases, leading to increased potential contamination of pads. When the wire bonding pad is polluted, the tensile strength of the bonding pad decreases and the uniformity of the connection strength decreases. It is therefore important to remove contaminants from the bonding pad prior to lead bonding.   The plasma cleaning technology of wide width plasma surface processor driven by RF can be used to prepare the solder pad before lead bonding. Wideband plasma surface treatment technology is used to clean the surface of the device in order to improve the tensile strength of the lead, thus reducing the fault of the device and increasing the pass rate.   The quality of lead bonding in integrated circuits has great influence on the reliability of microelectronic devices. The bonding area must be free of pollution and have good bonding performance. The presence of pollutants such as oxides and organic residues will seriously weaken the tensile strength of lead bonding. By using the wide-width plasma surface processor, the dirt produced in the process can be thoroughly removed, so as to effectively remove the dirt, and make the dirt surface activated, significantly improve the bonding strength of lead, effectively improve the reliability of integrated circuit devices.   The plasma cleaning treatment of chip and package substrate in integrated circuit can effectively improve the surface activity of the substrate, greatly improve the bonding strength, reduce the lamination of chip and substrate, improve the thermal conductivity, improve the reliability and stability of integrated circuit, and improve the service life of the product.   By using the plasma cleaning technology, the processing technology of IC can be improved and the quality of the products can be improved effectively. With the application of plasma surface treatment technology, we have more and better ways to treat materials! Believe in technology, believe in the future.

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