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Plasma surface treatment Plasma cleaning machine Advantages and disadvantages

Plasma surface treatment Plasma cleaning machine Advantages and disadvantages

As a professional plasma technology product research and development production manufacturing plasma surface treatment plasma cleaning machine manufacturers, for the equipment process improvement has always been the industry needs to solve the problem, is also a lot of room for improvement. Many products have their advantages and disadvantages. For example, the advantages of iPhone are beauty, security and so on, while the disadvantages are that the price is too expensive and it is not compatible with Android by using its own system. Now let's discuss the advantages and disadvantages of plasma devices. Advantages of plasma cleaning for plasma surface processor: 1. Keep away from the harm of organic solvent to human body. 2. Green cleaning method. 3, do not need to take the shape of the cleaning object into account, can clean irregular complex materials. 4. Further improve the efficiency of cleaning. 5, the plasma cleaning machine cleaning cost is low. 6. Be able to solve all kinds of materials, whether metal materials, semiconductor materials, metal oxides or polymer materials. 7. During the cleaning and decontamination, the surface characteristics of the material itself can also be improved.   Plasma surface treatment Plasma cleaning machine Equipment disadvantages: 1. High power consumption of plasma cleaning (higher than traditional cleaning) 2. The price of cleaning machine. 3. When the product area is too large, the plasma processor can only handle local areas and cannot cover the whole surface.   When analyzing the advantages and disadvantages of cleaning equipment, considering which is the correct solution should be purchased in combination with the production. Despite the shortcomings of the device, meeting the processing requirements is a priority more than anything else.

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Principle analysis of ultra-low temperature plasma etching technology for plasma surface treatment

Principle analysis of ultra-low temperature plasma etching technology for plasma surface treatment

Silicon structures with large aspect ratio, such as silicon groove, silicon through-hole, silicon vertebral array and silicon oxide groove, are mainly realized by the following two etching methods of plasma surface processor :1. Bosch etching process; 2. 2. Ultra-low temperature etching process.   Plasma surface treatment machine, Bosch Deep Reactive ion Etching (Bosch Deep Reactive lon Etching, Bosch DRIE) process happened at room temperature, using C4F8 produce protective layer and SF6 gas plasma isotropic Etching, alternative action to generate anisotropic great length-width ratio structure graphics, in the process of the structure of the side walls will be fanned wrinkles. This fan fold is caused by the lateral etching component produced by SF6 plasma etching at room temperature.   In the ultra-low temperature deep reactive ion etching process of plasma surface processor, the protective layer of by-products produced by O2 continuous plasma etching and SF6 plasma etching below -100℃ are used to form smooth structure graphic interval with large depth-width ratio. The main mechanism of low-temperature etching process is to independently control the etching reaction at the bottom and the side wall of the silicon groove, and realize higher silicon etching rate and higher silicon to photoresist etching selection ratio by changing the cathode voltage and reducing the temperature of silicon wafer substrate.   Cold plasma etching process, there exists a byproduct and polymer residues attached on the side wall of the graphics, so as to prevent further etching process, at the same time these by-products deposits on the inner surface of the etching chamber, has affected the further reaction of the surrounding environment, so that the etching rate change as the reaction time, lead to the whole process of etching extremely unstable, even might have an etched end phenomenon. So in the process of etching at room temperature, extra plasma cleaning steps have to be added. It is generally cleaned with O2 plasma to remove the by-products and polymer residues from the etching environment. For the plasma surface processor, the ultra-low temperature plasma etching overcomes this problem from the fundamental principle. In the ultra-low temperature etching process, the silicon wafer or graphical silicon substrate will be cooled to about -100℃, and then SF6/O2 plasma etching will be applied. Some inorganic byproducts containing SiOxFy are adsorbed and form the protective layer of the graphic side wall. When the reaction heats up to room temperature, these byproducts will be adsorbed under the condition of ion bombardment. Therefore, after the plasma surface processor etching, the graphics side wall and the etching cavity side wall will be self-cleaned. In addition, due to the simultaneous etching and side wall adsorption protection steps, the side walls of the feature pattern will become quite smooth. This simultaneous etching and guarding step also speeds up the etching process. Therefore, the process of SF6/O2 continuous plasma etching silicon substrate under ultra-low temperature is called standard ultra-low temperature process.   Precise control of the protective layer containing SiOxFy inorganic by-products forming the graphic side wall will be a key step in the standard ultra-low temperature etching process. Firstly, the content of O2 in SF6/O2 continuous plasma of the plasma surface processor needs to be controlled, so that the protective layer of the by-product can not only protect the graphic side wall, but also enable further plasma etching to take place at the bottom of the trench.   The etching rate comparison shows that the etching rate of photoresist and silicon oxide decreases with the decrease of temperature, especially below -100℃. However, the etching rate of silicon increases to a certain extent when the temperature is lower than -100℃, thus significantly increasing the etching selection ratio of silicon etching to silicon oxide and photoresist. Furthermore, more obvious anisotropic etching characteristics can be realized at temperatures below -100℃.   Therefore, the cathode temperature of plasma etching reaction of plasma surface processor can be lower than -100℃ as the standard of ultra-low temperature etching, and it can also be used as the starting point of subsequent process development and optimization. However, the low temperature process alone does not guarantee good anisotropic etching characteristics, even in the plasma etching process below -120℃. Isotropic phenomena also occur from time to time. So side wall protection plays an important role in reducing lateral etching. True anisotropic etching can only be achieved after the addition of a lateral wall covering to produce gaseous oxygen. In addition, it has been reported that ion bombardment is the decisive factor in many low-temperat

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Application of ultra-low temperature plasma etching technology for plasma surface treatment

Application of ultra-low temperature plasma etching technology for plasma surface treatment

Baklanov's team has reported that porous organosilicate material has been etched into plasma-surface processors at extremely low temperatures. This material is often used as insulation and filler in the Damascus process for semiconductor backends. It is found that when the plasma etching temperature of plasma surface processor is lower than -100℃, the low-k Damage generated in the etching process of the material will be sharply reduced, and its dielectric constant does not increase significantly, so that the material characteristics do not change significantly. At the same time, the damage of the etching process to the dielectric material under different bias pressure is compared. The low bias or zero bias ultra-low temperature etching of plasma surface processor can significantly reduce the PID of the material with low dielectric constant, and at the same time, the dielectric property of the material has no obvious change compared with that before etching.   Hess's team at Georgia Tech reported in 2015 that copper, gold and silver materials were etched at low temperatures in plasma surface processors using gas plasma etches. Conventional metal Cu etching uses Cl2 gas plasma to react with it at high temperature to produce CuCl2, which is then removed in the subsequent process. Hess's team reported the successful implementation of Cu etching in ICP etching chamber of plasma surface processor by using H2 gas plasma etching at low temperature (10℃). As shown in the scanning electron micrograph, the etching process uses SiO2 as the hard mask material to form the figure, and the 100nm thick Cu film etched by H2 gas plasma obviously forms the step-like structure, and Si substrate under the Cu film is exposed. In contrast to the Ar plasma etching process, the loss of Cu film after etching is not obvious. This indicates that unlike Ar gas plasma etching, which relies on physical bombardment of Cu films, H2 gas plasma etching mainly relies on chemical etching. During the reaction process, copper hydrides are formed and Cu metal bonds are destroyed, thus reducing the reaction potential energy. The hydride of the formed copper can be easily removed from the surface of the material and the reaction chamber. Similarly, Au and Ag are etched by H2 gas plasma or other H-containing plasma, forming metal hydrides that can reduce the reaction potential energy.   Ultra-low temperature etching process need hardware setup with normal plasma surface treatment machine inductively coupled plasma (ICP) etching device are very similar, just need to add liquid helium or nitrogen cooling device, makes the silicon wafer substrate temperature down to - 100 ℃, the use of SF, and O2 as the premise of plasma gas source, deep grooves or silicon Gao Shenkuan than silicon structure can also by Electron Cyclotron Resonance (Electron Cyclotron Resonance, ECR) etching. When the plasma surface processor increases the relative flow rate of O2 in the low-temperature ECR etching process, the silicon etching rate will significantly increase, and the ratio of F content to O2 content plays an important role in the etching process. Today and in the production process of plasma surface treatment machine, low temperature plasma etching process can not be widely used among the main difficulty is that in the actual production process is very difficult to keep the wafer substrate at low reaction temperature, the etching reaction cavity will be very complex, and change the silicon wafer in process temperature takes quite a long time, so that the effective Gao Changkuan than etching process cannot enter into industrial applications.

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Influence of plasma Etching on GOI/TDDB in plasma Cleaning Machine

Influence of plasma Etching on GOI/TDDB in plasma Cleaning Machine

Gate Oxide Integrity (GOI) generally refers to the time breakdown (TDDB) test of Gate silicon Oxide capacitance at constant voltage. With the continuous reduction of MOS circuit size, the gate oxide layer becomes thinner and thinner, and the decrease of power supply voltage cannot be synchronized with the gate oxygen thinning, which makes the gate oxide layer need to work under high electric field intensity. The breakdown of gate oxide layer is an important mode affecting the reliability of MOS devices. Usually, the breakdown of the oxide layer is instantaneous under high voltage, but in fact, even if the applied voltage is lower than the critical breakdown electric field, the breakdown will occur after a period of time, which is the breakdown of the oxide layer. A large number of experiments show that this kind of breakdown is closely related to the applied stress and time. In HKMG technology, Gate Dielectric materials by high - k hafnium oxide instead of silicon oxide, GOI was renamed the GDI (Gate Dielectric Integrity). Actual CMOS device will have various defects in gate oxide, including plasma cleaning machine plasma generated when the oxide layer deposition or follow-up process into the trap charge and movable ions, pinhole, silicon particles, coarse interface, thinning of the local thickness, oxide layer is weak, the physical defects in certain electrical and thermal stress under the action of will lead to the dielectric breakdown, is a major cause of TDDB produce. By improving the plasma equipment process and raw materials of plasma cleaning machine, the influence of random defects can be reduced, so that the oxidation layer breakdown is mainly determined by the properties of materials, at this time the failure is intrinsic failure, is the focus of various plasma cleaning machine plasma equipment research. One is that at constant voltage, a bond at the interface between the dielectric material and the gate or silicon substrate breaks, resulting in a trap, followed by hole and electron capture. After a relatively long period of degradation, electron capture continues until local Joule heat forms a conductive fuse in the dielectric material, resulting in a short circuit between the gate electrode and the silicon substrate, i.e., a short circuit between the cathode and the anode, resulting in the dielectric layer being broken down. A complete unified model to accurately describe the gate oxide layer breakdown has not been obtained so far, but two empirical models are widely used to describe the TDDB failure mechanism of oxide dielectric layer, one is the E model based on the electric field driving theory, the other is the 1/E model based on the electric current driving theory. Model E is also known as the thermochemical model. The model holds that TDDB occurs at low field intensity and high temperature because the electric field enhances the thermal fracture of atomic bonds of dielectric materials, and the added electric field makes the polar molecular bonds elongate, thus weakening the bonds and making them more likely to be destroyed in the standard Boltzmann thermal process. The degradation rate increases exponentially with the electric field because the presence of electric field reduces the specific energy of molecular bond fracture. When the local density of the broken bond or seepage point is high enough, a conductive path from anode to cathode will be formed. At this time, failure will occur, and the corresponding time is the failure time. The inverse relationship between the failure time and the degradation rate is, so it decreases with the electric field strength index, which can be expressed in the following form TF = A0exp (- ϒ Eox) exp (Ea/kBT) (7-10) Among them, the ϒ electric acceleration factor; Eox refers to the electric field intensity in oxide dielectric layer; Ea is activation energy; KB is Boltzmann constant; A0 is the coefficient related to material and process, and the value of different devices is different. The property of A0 makes TF become a distribution, which is generally weible distribution. The 1/E model is also known as the anodic cavity injection model. According to the model, under the applied electric field, the electrons injected by Fowler-Nordheim(FN) tunneling effect accelerate from the cathode to the anode, passing through the dielectric layer and causing damage to the dielectric layer. Moreover, when the accelerated electrons arrive at the anode, electron hole pairs are generated in the silicon at the anode interface by collision ionization, and some of the high-energy holes are injected into the valence band of the oxide layer. Under the action of electric field, these holes migrate back to the cathode interface, resulting in degradation of the oxide layer and breakdown. Both electrons and hot holes are the result of FN tunneling effect, and the exponential relationship between the failur

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Influence of plasma etching on NbTi in plasma equipment

Influence of plasma etching on NbTi in plasma equipment

Negative bias temperature instability (NBTI) refers to the instability of device parameters such as VTH, GM and IDSAT of PMOS when operating at high gate negative bias and temperature. If it is NMOS device, corresponding to PBTI, positive bias temperature instability. The NBTI effect was discovered in 1961. Plasma etching effect on NBTI plasma equipment or pretty big, NBTI effect is the main reason, plus negative on the PMOS transistor gate bias, after a certain time of negative grid bias and temperature stress, the PMOS transistor in the Si/SiO2 interface, a new interface interface potential increase, because the hole captur

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Plasma surface processor plasma cleaning photoresist

Plasma surface processor plasma cleaning photoresist

Residue on the surface of the chip, metal ions, organic matter and residual air pollutant produces in the process of semiconductor components, in order to prevent the air pollutants do serious harm to the production and processing chip, in the process of chip manufacturing, chip production need more cleaning procedures, plasma surface treatment machine plasma cleaning equipment is chip photoresist removal efficiency of pollutants such as ideal cleaning equipment. Photoresist plays a very important role in the whole production and manufacturing process, its cost accounts for about 25% of the whole production and manufacturing process, and poor removal effect will affect productivity. Choose in addition to traditional photoresist is high cost and low efficiency of wet degumming, and at the same time with the processing technology of continuous iterative update, more and more manufacturers begin to choose plasma cleaning dry remove photoresist, and such as to clean dry degumming is different from traditional process, it does not need to immerse organic chemistry, organic solvents, also do not need to handle with dry, stripping process easier to control, to avoid too many defective products, improve the yield of the product. Dry degumming method, also known as plasma surface treatment plasma degumming method, its basic principle is similar to the plasma cleaning method, is to remove the colloid through the reaction of oxygen atomic nucleus, because the basic composition of photoresist is hydrocarbon, the reaction produces carbon monoxide, carbon dioxide, water and other substances, and then suction to complete the removal. Plasma surface treatment technology applications include treatment, ash, modification, etching and other processes. The choice of plasma cleaning equipment, not only can completely remove photoresist and other organic matter, but also can activate the wafer surface, improve the wettability of the wafer surface. Polymers, including small holes of different shapes and long and narrow holes, can be easily cleaned using plasma. It is known that if the holes become sharp, the metal liquid can be difficult to inject. This is because the sharp corners increase the surface tension, which affects the flow of the metal liquid. Plasma cleaning can remove residue such as deep holes or other deep photoresists.

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