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Development of offset side walls

Development of offset side walls

The process with gate size below 1.0 PM is called sub-micron process. And below 0.25 PM, we call it deep submicron process. In the submicron and deep submicron age, with the decrease of gate length/Channel length, the main technical problem we faced was not only Punch Through, but also the hot carrier effect caused by Channel Electric Field. The main reason was that the width of the depletion zone extended to enter the channel, resulting in the narrowing of the effective channel length, so the equivalent electric field added on the channel increased (Vd/Leff), which gave rise to the occurrence of Electron hole Pair in the channel, and thus formed Hot carrier Injection (HCE or HCI).   The effective length of channel can only be improved by reducing the width of depletion zone. On the one hand, the width extension of depletion zone can be inhibited by increasing the concentration of channel area, NAPTimplant or Pocket implant used in advanced technology. On the other hand, the concentration of PN junction in the source leakage area is reduced, which can also reduce the width of the depletion area. The former can inhibit penetration, but it is impossible to increase the concentration all the time, after all, it will affect the opening voltage of the channel. For the latter, a low-doped LDD is adopted as the transition zone of the Junction of N+_Source/Drain, and the PN Junction of N+/PW is transferred to NLDD-/P Well, so the width of the depletion zone on the side of PW is naturally narrowed.   From the perspective of device structure, the offset side wall width size adjacent to the gate can control the position of LDD relative to the gate, or the distance of L.D doped to the bottom of the gate to achieve the purpose of controlling the gate - drain overlapped capacitance (CGDO). The rear main side wall (MainSpacer) will be injected into the following high-concentration source leakage area, so that the LDD area can be retained and a self-aligned source leakage area can be formed at the same time.   To form the side wall, a thin film is first deposited on the gate. Assuming that the thickness of the film deposition is A and the grid height is B, the height of the side wall beside the grid is A + B. Our side wall etching is backetching and anisotropic etching, which can be equivalently understood as only downward etching with little or no side etching, so if the etching amount is thickness A, the gate side wall will be left with only side wall residual, which is the side wall we want. For the main side wall, its width is the length of LDD, and its width is determined by the thickness of the deposited film, of course, the etching itself can also affect the width of the side wall.   In the submicron age, TEOS silicon oxide (TEOS silicon oxide) is deposited directly on the gate, and then the etching stops on the source leakage silicon to form the side wall. The problem with this approach is that it causes damage to the silicon. So when the device is reduced to a certain size, leakage becomes uncontrollable. Then came the 0.25 m era when the silicon oxide side wall of TEOS could not meet the requirements of the process, so the silicon nitride side wall was developed later. Because the etching of the si3N4 side wall can stop ON the silicon Oxide layer below, it has no effect ON the silicon. Such side wall is also called the silicon nitride side wall or the Oxide SiN (ON) side wall.   At an age of 0.18 m, the stress on the si3N4 side wall will decrease saturation current and increase leakage. In order to reduce the stress, the deposition temperature needs to be raised to 700℃, and the heat cost of mass production will increase, which will also increase the leakage. Therefore, ONO side wall was selected in the 0.18 m era. The bottom is also the silicon oxide formed by Rapid Thermal Oxidation (RTO), and then a thin layer of silicon nitride is deposited in the middle, followed by a layer of TEOS silicon oxide. Firstly, the silicon oxide of TEOS is etched, and the silicon nitride is stopped, and then the silicon nitride is etched and stopped on the silicon oxide of RTO. In this way, the stress and thermal cost requirements are satisfied, and there is no damage to the substrate. When it comes to the age below 65nm, the stress is no longer an important influence due to the reduction of side wall thickness. ON side wall is once again widely used in advanced semiconductor technology due to its advantages of simple process and stable control. 

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Advanced side wall etching technology of plasma flame machine

Advanced side wall etching technology of plasma flame machine

Conventional silicon nitride side wall plasma flame machine plasma etching improves selectivity by using high hydrogen fluorocarbon gas and achieves anisotropy by increasing ion bombardment. When the lateral wall film and the oxide stop layer are thicker, the effect is not obvious. But in some side SO Ⅰ etching, sidewall etching stop directly on silicon or germanium silicon material of the channel. The damage of channel material needs to be strictly controlled to a certain extent. Beyond a certain limit, the damage will seriously affect the performance of the device. At present, even with low ionic energy, the plasma electron temperature can only be controlled at 20eV on the plasma flame etching machine used by traditional industry. Germanium and silicon matrix materials were still damaged up to 15Å by using the optimized side wall etching process with CH3F gas containing 50% over-etching amount.   To reduce the damage of matrix material, it is necessary to further reduce the electron temperature to reduce the plasma electric potential and the ion energy. At present, the effective methods include high pressure mode and synchronous pulse plasma mode. By adjusting the duty ratio in pulse mode, the electron temperature can be reduced. The synchro pulsed plasma of plasma flame machine uses the rf of source power and the RF of offset power on and off, which makes the stability of synchro pulse more difficult to control, and the etching rate also drops sharply. In plasma with low electron temperature, the wide scattering of ions reduces the directivity of ions and at the same time weakens the directivity of etching, which is difficult to accept for the etching of side wall with accurate width control. Similarly, in the high pressure etching mode, in addition to the ion scattering problem caused by the electron temperature decrease, the longer gas residence time will make the etching uniformity worse, which needs to be solved together with other complex uniformity improvement methods.   In order to solve the problem of the previously discussed, meet the needs of demanding as feature sizes for miniature, plasma flame machine can use a similar atomic layer etching method, namely, the first to use H or He, and so on plasma processing on the surface of a silicon nitride, change the nature of the surface film layer, and then use the wet etching, such as, with a very dilute solution of hydrofluoric acid degeneration of surface film layer selectively be removed. As H is a light ion, it has almost no etching on the silicon nitride film compared with He, so it is used for the film treatment. In capacitor-coupled plasma etching machine, hydrogen concentration and injection depth of si3N4 surface film can be adjusted by modulating bias power and injection time. In the silicon nitride film, the concentration of H is closely related to the subsequent hydrofluoric acid etching rate. By controlling the concentration of hydrogen in the si3N4 film, the selective ratio of etching between the altered si3N4 film and the bulk si3N4 film was achieved. When the plasma flame machine etching stops in the side wall etching of germanium silicon material, the atom-like layer etching method can be used to control the silicon storage loss within 6Å.

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Tips for buying wide-width plasma Cleaning Machine

Tips for buying wide-width plasma Cleaning Machine

Wide-width plasma cleaning machine belongs to one of the process equipment, as a result of its unit price is higher, different from general consumer goods, so before the purchase of course to weigh in many aspects. It is well known that plasma surface treatment has many differences and advantages compared with other surface treatment methods. Plasma surface treatment is to ionize conductive gas into plasma, and to carry out surface treatment of materials, so as to achieve the purpose of cleaning, activation, etching and coating. Wide - width plasma cleaning machine is also a specific application of plasma surface treatment.   In order to choose the right wide-width plasma cleaning machine to buy, or need to be analyzed from the following aspects:   I. Analysis of cleaning requirements: 1. Select the type of plasma cleaning machine: According to the characteristics and requirements of the sample you will be dealing with, such as product form, product material, treatment temperature, time, yield requirements, treatment speed, etc., you need to consider the actual atmospheric plasma equipment and vacuum series test results.   2. Select the proper cleaning method: Through the analysis of cleaning needs, choose the right way of cleaning. If the treatment area is the surface border or local area, atmospheric low-temperature jet plasma cleaning and wide-width plasma equipment cleaning are selected. If the processing area is the surface of complex structure, or the processing area is uniform and error-free for comprehensive cleaning, then choose the wide-width vacuum plasma cleaning machine.   3. Choose well-known brands: In the aspect of wide-width plasma cleaning machine, the application technology of developed countries has a certain history and has been widely used, the plasma cleaning products of developed countries have been quite mature. China's plasma cleaning machine industry is in the stage of rapid development, some product quality and technical level has been comparable with the European and American countries. In order to ensure the long-term normal use of plasma cleaning machine, to achieve the expected effect of use, it is recommended that users choose well-known brands. In recent years, the gap between domestic and imported brands has been narrowed, and the plasma equipment independently researched and developed in China has also been greatly improved, and the quality and technology can better meet the processing requirements.   Ii. Analysis of the product and its effect: 1. Evaluate the product quality, technical level and after-sales service of the plasma cleaning machine brand: Choose enterprises with relatively professional and perfect solutions; Whether the product has obvious advantages; Wide-width plasma cleaning machine can also be divided into mechanical part and electronic circuit part, these parts of the technical requirements are higher. After sale is also an important link, this link suggests that we choose the manufacturer that has quality assurance.   2. Characteristics and structural differences of plasma cleaning machine: The structure of the plasma cleaning machine is mainly composed of two parts: one is the plasma generator, which is composed of integrated circuit, operation control, plasma generation power supply, air source treatment and safety protection. The invention also includes a plasma processing device comprising an excitation electrode, an excitation gas path, etc.   3. Evaluation of plasma cleaning effect: Contact Angle, Dyne pen, surface energy testing ink and other methods are mostly used. Contact Angle tester is a commonly used test method to evaluate the plasma cleaning effect at present, and its test data has high repeatability and stability. By using the optical surface contour method, a certain amount of liquid droplets are dropped on the surface of the sample, and the contact Angle is quantified. The smaller the contact Angle is, the better the cleaning effect will be. Iii. Analysis of price influencing Factors As for the purchase price of equipment, it is the result of the influence of a comprehensive factor, as well as the embodiment of the enterprise's technology and strength. Whether it is worth it depends on its value to us and how much benefit it brings to us. General wide atmospheric pressure plasma equipment compared to low-pressure vacuum plasma equipment, the price has more advantages, or according to your specific circumstances to choose.

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Etching of metal hard mask layer in large plasma cleaning machine

Etching of metal hard mask layer in large plasma cleaning machine

Using metal as large plasma cleaning machine groove process in the first groove etching hard mask layer can significantly reduce (ultra) low dielectric constant material damage, improve the metal wires twisted and roughness and control structure of double Damascus zhongtong between holes and grooves flat smooth transition transformation, from 45 nm technology node begins to be after a period of consolidation is widely used.   Since the metal hard mask pattern etched by large plasma cleaner will be used as the mask layer for groove etching, the graphic integrity and key size of the metal hard mask layer etched will be transferred to (super) low dielectric constant material again, and the metal wire will be formed after groove etching. Metal hard mask layer after etching graphic design graphics for the transmission of fidelity, etching after the key size deviation of load effect, will be the subsequent etching grooves inheritance or even due to the load effect of etching grooves will continue to enlarge the deviation, as a result, large plasma cleaning machine need to strictly control the metal etching hard mask layer. The smaller the load effect is, the higher the fidelity of the designed metal line graph is. The graphics can be transferred strictly from the mask through exposure and development to the metal hard mask layer, and the lateral wall contour Angle of the metal hard mask is approximately vertical, which is the requirement of the process integration for the metal hard mask layer etching process.   Typical large plasma cleaning machine metal hard mask etching process is generally photoresist and bottom anti-reflective layer organic material as a single etching mask structure.

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Are large on-line vacuum plasma cleaning machines harmful to body

Are large on-line vacuum plasma cleaning machines harmful to body

Large online vacuum plasma cleaning equipment is a new high-tech product technology application, many companies may have to buy, many bosses cheerfully plasma equipment to buy back, in order to improve the quality of products, but employees are too afraid to approach, afraid have radiation to the operation, the following solved it really harmful to the human body.   Compared with the traditional process, what are the advantages of large on-line vacuum plasma cleaning machine equipment? The effect of plasma is gas-solid coherent chemical reaction, no water consumption, no need to add chemical agents, no pollution to the natural environment. The whole process of gas drying treatment, no need of anticoagulant and water, almost no environmental problems, so energy conservation and environmental protection, save more costs.   Large on-line vacuum plasma equipment is applicable to a wide range, regardless of the type of processing materials, processing can be completed, such as metal materials, semiconductor chips, metal oxides and most fiber materials can be well processed; Short action time, fast reaction speed, high reaction level, wide processing objects, can significantly improve product quality. The original function of the substrate has not changed. The modified material is only on the surface and belongs to several to a dozen levels of nano-technology processing, such as the etching processing of nano-semiconductor chips.   Especially for fiber materials, the storage time is longer and the surface tension coefficient is higher than corona discharge. Functions related to fiber materials play only (10 ~ 1000A), while maintaining the raw material itself characteristic, can produce a variety of new features, low cost, simple equipment, easy maintenance, can run continuously, so a few bottles of special gas can replace thousands of kilograms of cleaner, clean maintenance costs than to wet cleaning maintenance are much lower.   The whole process can control the processing technology, all the technical parameters can be set by computer and data record inquiry, complete the quality management. The processing technology is simple, the use is convenient, the production manufacture maneuverability is strong. There is no limit to the shape of the processed object, no matter the size, simple or complex, parts or textiles, etc., can be processed.   Large online vacuum plasma cleaning machine equipment in the operation, is to form some radiation, but these radiation is very small, will not have adverse effects on the human body, and large online vacuum plasma cleaning machine itself is also equipped with electromagnetic radiation shielding, so these radiation can be completely ignored. The process is a safe treatment process, no harm to the operator's body.

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Etching process in plasma Cleaning Machine 3DNAND

Etching process in plasma Cleaning Machine 3DNAND

Compared with planar NAND flash process, 3DNAND has great changes in device structure, and the corresponding plasma surface processor plasma cleaning machine etching process is also very different from the past. The main new features of the process are around the 3D structure preparation, including the step etching; Channel through hole etching; Notch etching; Contact hole etching. 1. Plasma surface treatment machine plasma cleaning machine step etching The purpose of step etching is to connect each control grid layer separately for subsequent processes. As the control grid layer is in a stacked state, it needs to be extended to different degrees in the horizontal direction, while the contact hole structure prepared by the subsequent process connects different control grid layers and connects the interconnection circuit of the back segment for separate control. Plasma surface treatment Plasma cleaning machine step etching target material for SiO2 and Si3N4 stack structure, each step etching stop on the lower SiO2 surface. The step extension structure is formed by the reduction of the mask layer (generally photoresist), and the reduced size is transmitted to the target material supplier through the SiO2/Si3N4 etching process. The etching process is cycle etching. This process is usually accomplished using plasma cleaner inductively coupled plasma etching (ICP) models. The main control requirements are the consistency of each cycle size reduction during the photoresist reduction process, the edge roughness control, the degree of average size reduction on the entire wafer, and the selectivity of the SiO2/Si3N4 etching process for photoresist reduction. The accuracy of step width determines whether subsequent contact holes are properly connected to the specified control grid layer. Since the width of each step (i.e., the extension size of each control gate layer) is required to be hundreds of nanometers so that the subsequent contact hole can fall safely and accurately on the required control gate layer, each reduction process of photoresist mask layer in the cycling process requires a unilateral reduction of hundreds of nanometers. Generally, the etching gas is dominated by O2 to achieve a sufficiently high reduction rate. In the cyclic etching process, SiO2 and Si3N4 are etched and stopped on the lower SiO2 surface in a single time. Due to the need of selection ratio, they are generally decomposed into the steps of SiO2 etching (with a relatively low selection ratio) and Si3N4 etching, which requires a higher selection ratio for SiO2 to stop on the lower SiO2 surface. Usually, SiO2 is etched with etching gases with a relatively low carbon-fluorine ratio such as CF4/CHF3, while Si3N4 is etched with etching gases with a relatively high carbon-fluorine ratio such as CH2F2. The latter has a relatively low bias to provide an adequate selection ratio for SiO2. The total thickness of a pair of SiO2/Si3N4 layers in the industry mainstream is not more than 15nm, far less than the width of steps of hundreds of nanometers. The SiO2/Si3N4 etching requires relatively loose side wall Angle and does not need to be close to vertical. This is conducive to etching process adjustment to meet limited selection ratio requirements for SiO2 and photoresist. 2. Channel through hole etching for plasma cleaning machine of plasma surface processor The preparation of channel through hole structure consists of two processes: mask etching and channel through hole etching. (1) Channel through hole hard mask etching With the increase of capacity, the number of control grid layers has been gradually increased from 24 to 48, and more layers of devices are still under development. However, the channel through hole etching needs to etch through all SiO2/Si3O4 film pairs at one time. Compared with the contact hole depth of less than 200nm for the standard logic process (45nm process node), the 3D NAND middle channel hole depth is more than 400nm (early 24-layer 3D NAND structure). If 128 layers of control gate layer is to be realized, the channel through hole is more than L m. So channel through hole etching generally adopts hard mask etching process. This process is usually accomplished using plasma Surface treatment plasma Cleaner induced coupled plasma etching (ICP) models. According to the 3D NAND structure difference (mainly the difference in the number of gate layers), the hard mask material is mainly amorphous carbon. The etching gas is dominated by O2 or N2/H2 combination gas. The control requirements of mask etching mainly include: Graphic transfer accuracy. Avoid graphics deformation in etching process resulting in inaccurate graphics of channel through hole. Hardmask side walls need to be coherent and as vertical as possible. In the subsequent etching of 10 pairs of SiO2/Si3N4 thin film pairs, hard mask was used as the barrier layer. Defects in the hard mask side wall w

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