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Plasma pulse etching technology of plasma cleaning machine

Plasma pulse etching technology of plasma cleaning machine

In the traditional sense, the plasma etching process of plasma cleaning machine needs to achieve high yield, high uniformity, high selection ratio, anisotropy and no damage, etc. Etching process yield is a measure of productivity. It refers to the number of wafers etched per unit of time. Another important quality-related indicator is the etching uniformity within and between wafers. The required etching uniformity is the guarantee of chip yield. For the etching anisotropy of plasma cleaning machine, it directly defines the profile of the side wall of the etched microstructure. The potential plasma-induced damage (PID) has a significant impact on the performance of the device. For conventional continuous plasma etching, it becomes more and more difficult to achieve the etching target when the device size is reduced to below 14nm node. In order to meet these challenges, plasma pulse etching technology of plasma cleaning machine has been developed and gradually applied in industry.   Plasma pulsed technology was reported in the late 1980s and used for basic research in plasma physics. It is found that the pulsed plasma etching technology can solve many problems of the traditional continuous plasma etching, especially for the etching process with negative plasma. Compared with traditional continuous plasma etching, plasma pulsing technology of plasma cleaning machine can achieve etching process with high selectivity, high anisotropy and light charge accumulation damage, and can improve etching rate, reduce polymer production, increase etching uniformity and reduce uv radiation damage.   In order to better understand the relationship between input parameters (control variables) and output results (etching results) of plasma pulse etching technique. Different input parameters, such as reactor structure, Source and Bias power, air pressure and Frequency, gas flow rate and composition, material and cavity wall temperature, Pulse method (Source only, Bias, only, Synchronous Pulsing), Pulse Frequency, Pulse Repetition Frequency, PRF), Pulse Duty ratio (Pulse Duty Cycle) and Pulse Phase ((Phase Difference), etc., will affect the plasma characteristics in the reactor, Such as plasma density, reactive group activity, electron temperature, ion flux and energy, neutral particle and ion flux ratio, and dissociation rate. By changing the plasma characteristics of the plasma cleaning machine to affect the output results, such as cavity side wall state, macroscopic etching non-uniformity, etching and polymer deposition, microscopic etching non-uniformity, vertical and horizontal etching, graphic side wall protection layer, key size, side distortion and plasma-induced damage.   Optimize etching results by regulating important plasma properties by regulating chemical and physical reactions occurring inside the plasma and on the wafer surface. To better control these plasma characteristics, this is typically achieved by controlling the electron energy distribution (EED) and the ion energy distribution (IED), because the distribution of electrons and ions greatly affects the rate at which the ions and wafers react. In a general sense, the plasma cleaning machine electrons affect the excitation, ionization, decomposition and thermal diffusion processes, thus affecting the flux, energy and surface reaction rate of many neutral reaction groups. Ions can transmit enough energy to promote the surface chemical reaction process and induce sputtering, thus affecting the flux and energy of reactive ions as well as the surface reaction rate involved by ions.

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Plasma surface processor gas cluster ion beam etching technique

Plasma surface processor gas cluster ion beam etching technique

Plasma surface processor gas cluster ion beam etching has a series of characteristics that traditional plasma etching does not have. In conventional plasmas, electrons and ions have a wide energy distribution, and a few high-energy particles can penetrate several layers of atoms to damage the substrate during etching on the target material. Therefore, how to optimize the energy distribution of plasma ions in plasma surface treatment is always a development direction of plasma etching technology.   The gas cluster ion beam has an outstanding advantage in this respect. A gas cluster is a relatively stable aggregate composed of several to tens of thousands of atoms or molecules under the action of physics or chemistry. Gas clusters can be ionized under electron bombardment, and ionized gas clusters can obtain great kinetic energy under the action of electric field, and can also be filtered under the action of magnetic field, so as to obtain gas cluster ion beam with more concentrated energy distribution. Plasma surface processor gas cluster ion beam can obtain high energy under the action of accelerating electrode, form high energy density in a local area, and excite many kinds of physical and chemical reactions near the target material surface. But the velocity of each particle in the cluster is interphase, and the average energy of each particle is low. Therefore, at the same average energy as the traditional plasma, the energy of the particles is much better than the plasma, and will not cause damage to the deep atoms of the target material during the process of reacting with the target material.   This advantage makes gas cluster ion beam can be used well in many aspects. Examples include surface smoothing, surface analysis, shallow injection, film deposition, particle removal, etching, etc. With the increase of energy, different reactions such as gas cluster deposition, gas cluster etching and gas cluster shallow injection are introduced. The specific methods of producing clusters by PLASMA surface processors include gas accumulation, ultrasonic expansion, laser evaporation, magnetron sputtering, ion sputtering, arc discharge, electroinjection liquid metal method and helium droplet extraction method.

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Double graphic etching of polysilicon gate for plasma surface treatment machine

Double graphic etching of polysilicon gate for plasma surface treatment machine

In polysilicon graphic definition, in addition to the characteristic size of the line itself, the graph at the end of the line also needs to be strictly controlled. Different from the center of the line, due to the limitation of yellow light process, the side wall of photoresist at the end of the line is tilted out, and it is etched from three directions when the plasma surface treatment machine etches, so the photoresist recedes rapidly. In this industry, the precision of etching process to the line end graphics is evaluated by the ratio of the characteristic size difference before and after etching and the characteristic size difference before and after etching with the plasma surface processor in the center of the line, which is called line end retraction.   In general, the smaller the retraction at the end of the line, the better, indicating that the distortion at the end of the line is controlled within a small range. It is well known that polysilicon gate lines cross the active region to form devices. If the end of the polysilicon gate line falls back too much during the etching process of the plasma surface treatment machine, the gate length will not be enough to cross the active region, and the silicon oxide in the shallow groove isolation area will be damaged in the subsequent process, which will cause the exposed active region as the channel to form damage and cause device failure.   It is found that the retraction of the end of the line is closely related to the initial etching process defined by graphic etching, and the retraction performance of the end of the line is very different when the gas is etched with different anti-reflection layers at the bottom. At present, there are mainly HBr/Cl2 and fluorine base gas etched by plasma surface treatment machine. Using the bottom anti-reflection layer etching process of fluorine-based gas, the regression degree of the line end is far less than that of HBr/Cl2 etching process. This is because in the HBr/Cl2 etching process, the VUV will change the surface properties of the photoresist, and the fracture of the photoresist polymer molecules will make the photoresist remelt and shrink, making the regression of the end of the line more violent. Therefore, in the initial etching step of the graphic definition, the use of fluorine-based gas can accurately control the transfer of the graphic. But with miniature device, demand of polysilicon gate 'distance is smaller and smaller, at this moment just by LES has been unable to meet the requirements of process control, the introduction of dual graphics cutting technology is a good way to solve this problem, the double graphics process as early as 2010 years ago have been put forward, samsung technology was at the university of new Mexico lawsuit, since then, double graphics technology invention got rapid development, also in the field of domestic made a lot of layout on the intellectual property rights.   The industry has introduced a dual graphics process in the 28nm process to avoid excessive shrinkage of polysilicon line ends. Long line shapes are first formed through the first exposure and etching, often referred to as P1. Then, the second exposure process is made. Sandwich structure process with anti-reflection layer at the bottom containing silicon is generally adopted. In other words, the lower layer is deposited by rotary coating process to achieve the purpose of flattening. Then spin coating intermediate layer containing silicon bottom anti-reflection layer; The exposure process of rotating photoresist and cutting hole. Cutting polysilicon grids by an etching process is often referred to as P2. This dual graphic technique effectively avoids the microform limitation of yellow light exposure in both the length and width of the gate in the first graphic technique. At the same time, through the optimization of etching cutting process, that is, adding gas that can produce heavy polymer into the etching gas of plasma surface treatment machine, the head-to-head distance of polysilicon gate can be reduced to less than 20nm, which meets the need of continuous microminification in the active region.   Adopts double graphics etching process, the cutting process of process window is to be considered, usually all graphics cutting process by using the design rules make all fall on the silicon oxide, which in the hard mask cutting hard enough in the steps of etching, in order to achieve the purpose of cutting completely, increase craft work window. However, if there is no design rule to avoid it, that is, if there is an area where both graphics are exposed and the substrate below the polysilicon is designed in an active region, then the over-etching amount should be controlled in the cutting process to avoid the damage of the underlying silicon substrate. When the size is further miniaturized, the depth-width ratio of the cutt

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Surface modification of polymer by low temperature plasma treatment

Surface modification of polymer by low temperature plasma treatment

The low temperature plasma surface treatment system technology provides a means of microscopic modification of environmentally friendly and low-cost materials without the need for mechanical processing and chemical reagents. Low temperature plasma surface technology can not only clean, activate and etch materials, but also optimize the surface of plastic, metal or ceramic materials, improve their bonding ability or give new surface characteristics. Its potential medical value includes improving the surface hydrophilicity or hydrophobicity of the material, reducing surface friction, and improving the surface barrier of the material.   Low temperature plasma surface treatment is a technique that can improve the adsorption capacity of polymer surface by changing only a few atomic layers. The modified polyolefin, silica gel and fluoropolymer have good adhesive properties. By using low temperature plasma technology, we can obtain the required material surface without losing the physical properties of the material itself. Plasma treatment will not affect the physical properties of the material, the material parts treated by plasma compared with the parts not treated by plasma, is generally difficult to distinguish visually, physically.   Low temperature plasma surface treatment is usually a plasma reaction process that causes changes in molecular structure or atomic arrangement on the surface. Plasma surface treatment can produce highly active groups at low temperature even in inert environment such as oxygen and nitrogen. In the process, the plasma also produces high-energy ultraviolet light, which, along with the rapidly producing ions and electrons, provides the energy needed to break the polymer bonds and produce surface chemical reactions. In this chemical process, only a few atomic layers on the surface of the material are involved, and the bulk properties of the polymer remain unchanged. The selection of appropriate reaction gas and process parameters can promote some specific reactions, resulting in the formation of special polymer attachments and structures. Reactants can be selected to cause the plasma to react with the substrate to form volatile attachments. The treated appendages on the surface of the material can be removed by vacuum pump without further cleaning or neutralization, and such functions as surface cleaning modification and etching can be realized.

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Circuit board plasma cleaner

Circuit board plasma cleaner

PCB, especially high density interconnection boards, need to be metallized through the holes, so that the electrical conduction between the layers can be realized through metallized holes. Laser hole or mechanical hole due to the local high temperature of drilling, drilling after the residual gel is often attached to the hole. In order to avoid quality problems in the subsequent process, it must be removed before the next process. At present, the removal of drilling pollution mainly involves wet processes, such as potassium permanganate method. Due to the difficulty of liquid entering the hole, the removal of drilling pollution is limited. As a dry cleaning method, plasma cleaning machine solves this problem well.   Principle of plasma cleaning:   A plasma, also known as the fourth state of matter, is an electrically neutral ionization mass. The plasma gas must have several conditions: a certain degree of vacuum; The selected gas is supplied with a certain degree of vacuum. Turn on the RF power and apply a high voltage electric field to the electrodes in the vacuum to ionize the gas between the electrodes, generating a glow and forming a plasma. The plasma cleaning process in printed circuit board can be divided into three stages. One is the process of adsorbed the generated gas phase substances containing free radicals, electrons and molecular plasmas on the surface of the contaminated solid. Secondly, the adsorbed groups are reacted with the molecules on the surface of dirty solid to form molecular products, which is the process of analyzing the generated molecular products into gas phase. The third is the process of separating the reaction residue from the plasma.   Plasma hole cleaning:   Plasma hole cleaning is the primary application of printed circuit board. Oxygen and tetrafluorocarbons are usually mixed as the gas source. In order to obtain better treatment effect, controlling the proportion of gas is the determinant of plasma activity.   Plasma surface activation:   PTFE(polytetrafluoro-ethylene) materials are mainly used in microwave plates. The general FR-4 multilayer plate hole metallization process is difficult to achieve, mainly because of the activation process before chemical copper deposition. The existing wet treatment method is to use naphthalene sodium complex treatment solution to make PTFE surface atoms in the pore eroded, so as to achieve the purpose of wetting the pore wall. It is difficult to synthesize, toxic, and has a short shelf life. Plasma processing is a dry process, which solves these problems well.   Plasma removal residue:   Plasma removal is a good choice in PCB production. In the process of image transfer, the printed circuit board after sticking the dry film needs to be developed for plasma etching to remove the copper area that does not need to be treated. The process is to use the developer to dissolve the dry film that is not exposed. In the subsequent etching process, the dry film copper surface that is not exposed is etched. In this development process, often because of the development cylinder nozzle pressure is not uniform and other reasons, local unexposed dry film can not be completely dissolved, forming residue. This is more likely to occur in fine wire fabrication, resulting in a short circuit after subsequent etching. The residue can be well removed by plasma treatment. In addition, when the circuit board is mounted, areas such as BGA need to have a clean copper surface, and the residual copper will affect the reliability of welding. It is proved that this method is feasible and achieves the purpose of plasma cleaning by using air as air source.   Plasma treatment process is a dry process, compared with the wet process has many advantages, these advantages are determined by the characteristics of plasma itself. The whole reactive neutral plasma from high voltage ionization has a high degree of activity, and can continuously react with the atoms on the surface of the material, so that the surface material is constantly excited into gas, volatilization, in order to achieve the purpose of cleaning. It has good practicability in the process of printed circuit board production and is a clean, environmental friendly and efficient cleaning method.   Atmospheric injection plasma cleaning machine has the advantages of high cost performance, simple and convenient installation, can be installed on the assembly line and automatic equipment. So atmospheric jet plasma cleaning machine has been the preferred use of most enterprises plasma surface treatment equipment processing circuit board, according to the nozzle can be rotating different, atmospheric jet plasma cleaning machine can be divided into direct jet atmospheric jet cleaning machine and atmospheric jet rotary plasma cleaning machine two types.

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Ceramic plasma cleaning machine

Ceramic plasma cleaning machine

The multi-layer ceramic shell brazed by Ag72Cu28 solder consists of multi-layer metallized ceramics, base and metal parts. Before entering the electroplating process, a variety of dirt, including dust, solid particles, organic matters, etc. will inevitably occur on the surface of the shell. At the same time, due to natural oxidation, there will also be a layer of oxidation. The plating surface must be cleaned before electroplating, otherwise it will affect the binding force between the coating and the substrate, resulting in peeling and foaming of the coating. Traditional removal of such pollutants, usually using toluene, acetone, ethanol and other organic solvents, but this method on the one hand is not thorough cleaning, easy to cause coating defects, on the other hand will increase production costs, causing environmental problems. Because of its uniformity, repeatability, controllability, energy saving and environmental protection, plasma cleaning machine technology has been widely used in this field.   In the process of plasma cleaning machine cleaning, oxygen into plasma containing oxygen free radicals, excited oxygen molecules and particles such as electrons such plasma with a solid surface can be divided into physical reaction (ion bombardment) and chemical reaction, physical reaction mechanisms are active particle bombardment for cleaning the surface, make the discharge of pollutants from surface, chemical reaction mechanism is O active particle oxidation of organic matter into water and carbon dioxide molecules, then cleared from the surface.   It is feasible to use O2 as the cleaning gas in plasma cleaning machine to deal with Ag72Cu28 solder. Before electroplating Ni and Au on the shell surface of Ag72Cu28 solder, plasma cleaning using O2 as cleaning gas can remove organic dirt, improve coating quality, which is very important for improving product quality and reliability, and also has a good demonstration effect for energy conservation and emission reduction.

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