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Prospect of Plasma Etching in New Material Etching

Prospect of Plasma Etching in New Material Etching

In order to keep up with Moore's Law, IC manufacturing after 5nm is likely to abandon the traditional silicon chip process and introduce a new material, plasma etching, as an alternative. It now seems likely that 5nm will be the last stop for silicon chip technology. In fact, concerns about Moore's Law have grown in recent years as the limits on silicon chips have edged closer. To keep up with Moore's Law, transistors must shrink in size. But as the transistor size shrink, the channel between the source and the grid has been shortened, when the channel to a certain extent, the quantum tunneling effect will become very easy, in other words, even if no applied voltage, the plasma etching source and drain can be thought of as a communication, they lost the action of the switch transistor, therefore can't realize logic circuit. From now on, the 7nm process is possible, the 5nm process has certain technical support, and the 3nm process is the physical limit of the silicon semiconductor process. Therefore, the replacement material of silicon for 5nm post-plasma etching process has long attracted the attention of various commercial giants and research institutions. At present, III-V compound semiconductor, graphene, carbon nanotubes, such as the voice of the industry is high, the current general view is to use germanium in PMOS, nano NMOS with indium phosphate. For III-V compounds, IMEC(Microelectronics Research Center, whose members include Intel Corp., IBM Corp., TSMC, Samsung and other semiconductor giants) has long announced the success of the finFET compound semiconductor by integrating phosphate and arsenide imiters on a plasma etched 300mm(22nm) wafer. III-V compound semiconductors have no significant physical defects compared to other alternative materials, and similar to the current silicon chip process, many existing plasma etching technologies can be applied to new materials, so they are also considered ideal materials to continue to replace silicon beyond 5nm. Graphene material is regarded as a kind of dream, it has the very strong conductivity, can be bent, the intensity is high, these features can be used in every field, even has the potential to change the future of the world, there are many people regard it as is the future of the replace silicon semiconductor materials, graphene is known as the silicon after the "magic material" of The Times, is expected in 2028 to join technology roadmap for semiconductors (ITRS). Carbon nanotubes can improve the integration of the transistors per unit area number (such as 2.5 D, 3 D stacked package, currently in NAND, DRAM, such as storage products for many applications, but for IC chip, heat problem is bad), in the future may even have a photonic computing, quantum computing, such as reverse the computer appear Moore's law.

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Plasma etching cleaning machine indium phosphide etching

Plasma etching cleaning machine indium phosphide etching

Indium phosphide can not only be used as the substrate material of the epitaxial layer, but also can be used as the channel material or electrode material itself, so relative to other 35 groups of materials, the plasma etching of indium phosphide material cleaning machine plasma etching research is also more. Using CH4 and H2 to etch phosphated steel is a kind of method that appeared earlier. This method can be applied to large area and large size indium phosphide etching. Etching rate is significant, but in the graphics complex and concentration areas domain due to produce by-products is difficult to volatilize, and plasma etching of cleaning machine plasma etching gas polymer is very heavy, it is easy to etch termination occurs at the bottom of the etched pattern, or graphic morphology change poor phenomenon, therefore, CH4 and H2 gas combinations need to be further improved to become the industrial applications of indium phosphide etching method. Literature shows that the low temperature etching of indium phosphide with chlorine as the main etching gas has the problems of low etching rate and difficult removal of by-products at low temperature. Chlorine is very sensitive to temperature, and the higher the temperature, the faster the etching rate. However, when the temperature is low, due to the large number of by-products and difficulty in volatilization, the enrichment effect of by-products will cause the etching termination when the total amount of etching is too large (InClx is difficult to volatilize). However, the low temperature etching mainly with CH4 and H2 is faced with the phenomenon of low etching rate causing the etching stop. Therefore, how to realize the etching of InP materials at low temperature has become a common research hotspot. The more common method is to mix other gases with conventional indium phosphide etching gas, and the earlier research in this area was reported by Carlotta in New Zealand. Using Cl2/Ar/H2 mixed gas, good indium phosphide graphics can be obtained at 150℃, and smooth and continuous graphic morphology can be obtained at high temperature, but 150℃ is not low temperature after all. In 2007, Tsinghua University reported a method to further optimize the gas ratio and improve other conditions to overcome these problems. This etching method can overcome the problem of difficult-to-volatilize by-products at room temperature. Because the appropriate ratio of CH4 and chlorine gas will form In(CH)x by-products, which are easier to volatilize and remove than InClx. The surface roughness of indium phosphide is low and there is no residue of by-products. The etching conditions are as follows :Cl2:CH4:Ar=12∶12:3; 4 mt; TCP is 1000 w; Bias voltage 300 v. The calculated etching rate is 8600 A /min, and the selective ratio of SiN is 10∶1, which can meet the requirements of the current process. However, the disadvantages of this method are also obvious: the by-product is completely volatile, the side wall of the graph is not protected enough, resulting in the overall shape will be concave. However, such morphology can hardly meet the requirements of device performance no matter as gate, epitaxial layer or mask. Therefore, another gas mixture Cl2/N2/Ar has been developed by the authors, which uses different etching mechanism and adds N2 to better remove indium phosphide by physical bombardment. This kind of method can realize the vertical graph of phosphated steel. The study on etching rate and selection ratio of different flow ratio is summarized in Table 8.2. It can be seen that in the absence of N2, the selection ratio is high, but the surface roughness is poor. With the increase of N2, the roughness is continuously improved, but a lot of selection ratio will be sacrificed. Based on the existing etching machine, we should be able to make better use of different etching steps, using different etching gas ratios and other conditions, and synchronously improve these contradictions to obtain the desired graphics. The above methods are implemented in the ICP machine, and earlier in the RIE machine has also been studied to explore the impact of pressure on the etching of indium phosphate. With the increase of pressure, the by-products continue to accumulate so that the selection ratio continues to decrease, and the etching is terminated. Under the condition of 5 pa, is there a silicon nitride environment of hard mask etching pattern is almost the same, but under the 10 pa, the absence of silicon nitride hard mask, in the graphics area density is bigger, the by-product or polymers is more, etching rate fell sharply, and got there is a big difference between different graphics environment etching depth; When the pressure is 20Pa, the etching will stop regardless of the density surrounding the pattern. This is because the amount of polymer is so large that it covers all the pattern and the etching cannot be carried out. A

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Ionization degluing of circuit board of plasma surface treatment machine

Ionization degluing of circuit board of plasma surface treatment machine

Plasma surface processor glue removal process, the glue removal gas is oxygen. In this method, the circuit board is placed in the vacuum reaction system, through a small amount of oxygen, coupled with high frequency and high pressure, the high frequency signal generator generates high frequency signal, in the quartz tube to form a strong electromagnetic field, the oxygen ionization, the formation of oxygen ions, activated oxygen atoms, oxygen molecules and electrons and other mixed-quality glow column. Reactive oxygen species (active atomic oxygen) can quickly oxidize the residual gel into volatile gas, and volatilize away. After the residue is removed from the board, it will be cleaned. The advantages of plasma surface processor are simple operation, high efficiency, clean and smooth surface, no scratches, low cost and environmental protection. The desizing machine processing of plasma surface processor is an important part of micromachining. After micromachining, such as electron beam exposure and ultraviolet exposure, photoresists need to be removed or treated with substrate film. The cleaning degree of photoresist will directly affect the smooth implementation of the subsequent process. The CRF Plasma Surface Proctor uses high-performance components to accurately control process parameters, and its process monitoring and data acquisition software allows for strict quality control. This technology has been successfully applied to power transistors, simulator parts, sensors, optical devices, optoelectronics, electronic components, MOEMS, biological devices, LED and other fields. The CRF plasma degluing machine is used to remove the contaminants on PCB board, and the effect is very obvious. Plasma glue removing machine has the characteristics of simple process, reliable, high efficiency, treatment, no acid waste water and other residues.

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Influence of Plasma Pretreated Wood on Wood Surface Wetting

Influence of Plasma Pretreated Wood on Wood Surface Wetting

The wettability of wood is an important interface characteristic to describe the difficulty and effect of wetting, diffusion and bonding on wood surface when some liquids (water, adhesives, oxidants and cross-linkers, etc.) contact wood. Plasma pretreatment is of great significance for wood interface and various modification treatment processes. As a kind of natural polymer, wood not only has the dual characteristics of biology and physical chemistry, but also as an anisotropic material with inhomogeneity, its surface structure and chemical composition affect the adhesion of wood, and then affect the overall strength, toughness, durability and other properties of wood. Experimental method: put the wood veneer on the lower tray of the plasma cleaning machine, put the tray in the reaction chamber, and close the chamber door. Then open the vacuum pump to vacuum, pump to the corresponding vacuum, open the gas required for plasma treatment, press the RF key for plasma treatment, according to the test set time after treatment, the sheet out, sealed with a sealing paper, to be determined. Because of the aging of plasma treatment, the surface contact Angle of the treated samples should be tested in the shortest possible time. Results and analysis: By the plasma cleaning machine after pretreatment, about 3 minutes after the contact Angle is 113.8 ° dropped to about 50 °, with the extension of processing time, the contact Angle change tends to be stable or increase slightly, especially when the processing time is more than 7 min, wood surface by high energy electron, ion relatively uninterrupted, energy accumulation is bigger, the local have excessive corrosion phenomena, and plasma processing make the wood surface produces a large number of oxygen containing functional group and peroxide, including parts of the carboxyl and carbonyl hair base, lead to an increase in temperature of the wood in the plasma of high energy discharge, easy to cause local color darker wood surface, produce coking phenomenon. Therefore, low temperature plasma discharge treatment of wood, the treatment time of 3min is appropriate.

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Application of Plasma Equipment for Surface Modification of Oral Implants

Application of Plasma Equipment for Surface Modification of Oral Implants

At present, the application of dental implant prosthesis in stomatology is more and more widely, and titanium is the common material of dental implant system. Titanium is a kind of inert metal material with poor biological activity, which is easily wrapped by a layer of fibrous membrane after implantation. Lack of initiative in the process of osteosynthesis leads to long time of osteosynthesis, poor initial stability and low long-term success rate. At the same time, the low hardness, fatigue strength and wear resistance of pure titanium lead to the loosening of abutment fastening screws, pitting, wear and corrosion failure of connection threads during the use of titanium implants, which greatly reduces the reliability and service life of the implant system. After the treatment and modification by the isoion equipment, the water droplets from the contact Angle tester slipped from the top of the implant, and the Angle value could not be determined and approached 0. It has been proved by previous experiments that the surface of dental titanium implants becomes superhydrophilic after plasma treatment under the corresponding process gas and other conditions, which plays an important role in medical treatment. The special wettability is one of the important properties of surface materials, mainly determined by the microscopic geometry and chemical composition of the surface material, because of its unique physical and chemical properties and its successful application in finishing, lubrication, bonding, foam, waterproof and biomedical materials has aroused a lot of interest. The adsorption and proliferation experiments of osteoblasts showed that the oxidized surface of plasma equipment had better biological activity than that of heat treatment. We tried to prepare superhydrophobic surface through molecular self-assembly, and the contact Angle was higher than 130 degrees. The conversion and control between superhydrophilicity and superhydrophobicity can be realized by plasma modification in plasma equipment.

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Methods of surface modification of biomedical metal materials

Methods of surface modification of biomedical metal materials

Biomedical chemical method for surface modification of metal materials is a new kind of technology developed in recent years. This is based on the idea that bioactive substances are directly attached to the modified metal substrate, and organic macromolecular substances such as proteins or enzymes are introduced into the substrate surface to make it have better biological activity, so it has the characteristics of more direct and more effective. Some researchers have treated metal surfaces with NH3 and N2 plasma to introduce amino groups, which are then quaternized by methane iodide reaction. Heparin, an anticoagulant with a negative charge sulfate, is then used to form a complex with the quaternized amino groups on the surface, thus fixing heparin on the metal surface. The nitrogen group formed on the metal surface can also be used to fix proteins. Most metal materials are coated with a hydrophilic polymer film. Under certain conditions, it will interact with [H] or H- to form hydroxyl groups (-OH) adhering to the surface of the matrix. In this case, the matrix is silylated with APS(An1Inopropyltriethox-YSI-Lane) plasma. Some proteins or enzymes, such as trypsin, are bonded to the surface of the matrix by the action of glutarate aldehyde. This method can fix living biomolecules on the surface of metallic, inorganic, non-porous and non-loose biomaterials, thus greatly improving the surface activity of the materials. Most metal substrates, such as Ti, Ti6Al4V, Co-Cr-Mo and TiTA30, can be modified by plasma grafting of organic matter to adsorb biomolecules directly on the surface. Artificial biomaterials used for transplantation, tissue culture or other purposes must be biocompatible with the biological environment in which they are used. At present, the development needs the biocompatibility of the adherent cell surface, focused on the fixed ECM proteins and metal substrate surface, for those who don't need to attach to cells, such as blood cells used in material surface modification technology is to produce highly inert surface, such as hydrocarbons, fluoride or bioactive molecules to ban cell fixation, or producing highly hydrophilic groups, etc.

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