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The cleaning principle of vacuum plasma cleaning machine is introduced

The cleaning principle of vacuum plasma cleaning machine is introduced

Vacuum plasma cleaning machine can be widely used for surface activation modification of materials to improve adhesion, etc., the following introduction to the whole cleaning principle of vacuum plasma cleaning machine: 1) The cleaned workpiece is sent into the vacuum plasma cleaning machine chamber and fixed, the operating device is started and the exhaust is started, so that the vacuum degree of the vacuum chamber reaches the standard 10Pa, and the usual discharge time takes about a few minutes. 2) The gas used for plasma cleaning is introduced into the vacuum chamber, and the pressure in the chamber is kept stable. According to different cleaning materials, oxygen, argon, hydrogen, nitrogen, carbon tetrafluoride and other gases can be used respectively. 3) High-frequency voltage is applied between electrode and grounding equipment in vacuum chamber, so that the gas is broken down, and glow discharge occurs, and plasma is generated. The plasma generated in vacuum chamber completely covers the workpiece to be processed, and cleaning operation begins. Generally, the duration of cleaning treatment varies from tens of seconds to a few minutes. 4) After cleaning, cut off the power supply and discharge the gas and gasified dirt through the vacuum pump. Several common vacuum plasma cleaning machine processing materials: 1, activated metal: Although the metal is activated, the activation process is very unstable, so the effective time is short. If the metal is activated, the subsequent processing (bonding, painting, etc.) must be done within minutes or hours, otherwise the surface will soon combine with dirt in the surrounding air. 2. Activation and modification of plastic: Plastics, such as polypropylene or PE, are of a poleless structure. This means that the plastics must be pretreated before they can be painted and bonded. Usually dry oil-free compressed air is used as the process gas. 3. Glass and ceramics can also be activated: Glass and ceramic bottles have similar properties to metals and have a short effective time. Compressed air is usually used as the process gas. Validation of the effect of the vacuum plasma cleaning machine treated and untreated workpiece can be immersed in water (polar solution), the activation effect is extremely impressive. For untreated parts, liquid droplets of normal shape are formed. The treated part of the treated part will be completely wet with water.

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What is the function of plasma surface treatment equipment

What is the function of plasma surface treatment equipment

Plasma surface treatment equipment provides the ability to change the surface of a material to improve surface energy, adhesion, printing and wetting. The plasma also provides the ability to coat a water-resistant product. In fact, almost any material can be treated with plasma. The contaminants treated by plasma surface treatment devices are usually invisible and on the nanoscale. This contamination can affect an object's ability to interact with other substances, such as glue or ink. Using plasma to treat the surface of the object, organic matter can be removed. Plasma surface treatment equipment can improve the bond or solder bonding strength, improve the reliability of printing. This process is suitable for shiny plastics and rubber, which can be printed and bonded after impurities are removed. What is the role of plasma surface treatment equipment? Surface Activation and Etching of Materials: Any plasma surface modification method without chemical treatment is called dry etching. All plasma cleaning products are dry etched during the plasma etching process. Plasma etching is similar to plasma cleaning. In plasma etching, however, the purpose is to remove the treated surface layer impurities. Plasma surface treatment: Oxygen plasma treatment is a commonly used dry etching method at present. Oxygen (sometimes mixed with argon) is used to treat aluminium, stainless steel, glass, plastics and ceramic surfaces. Plasma activation: Slight changes to the activated surface allow for better printing or bonding. Etching machines allow plasma erosion of printed circuit boards to improve their adhesive properties, such as adhesion and veneability. Plasma surface modification: Plasma surface treatment equipment modification refers to the cleaning of the product to improve its printing or bonding ability. The purpose of plasma cleaning is to remove organic contaminants from the surface. Plasma treats the surface of your product to accept adhesives or printing inks. Often used to modify the surface of polytetrafluoroethylene or plastic plasmas, it actually changes the surface of the material, leaving free radicals that stick to the glue or ink.

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FPC circuit board chip plasma cleaning machine application

FPC circuit board chip plasma cleaning machine application

Plasma activation in the electronics industry, cleaning process is the key to reduce the cost, high reliability, process technology, before the chip PCB conductive coating, first plasma activation cleaning processing, fine cleaning and in addition to electrostatic plasma cleaning machine, and guaranteeing the strong adhesion of the coating, the plasma surface cleaning technology in the field of chip packaging, can choose atmospheric pressure or vacuum equipment for processing. One is the plastic window part of the isoionization treatment, due to the use of isoionization treatment technology, so that the surface performance of the material has been improved, so that the coating distribution is more uniform, which not only makes the product looks impeccable, but also greatly reduce the rejection rate in the production process. Application of plasma cleaning machine in FPC circuit board industry: As the substrate of electronic components, printed circuit board has conductivity, which poses a challenge to the use of atmospheric pressure process to treat printed circuit board. Any surface pretreatment method, even if only generates a small potential, may cause short circuit, resulting in wiring and electronic device damage. For this type of electronic application, the special property of plasma cleaning machine processing technology opens up new possibilities for industrial applications in this field. Application of plasma cleaning machine in silicon wafer and chip industry: Silicon wafers, chips and high-performance semiconductors are highly sensitive electronic components, and plasma cleaning machine technology as a manufacturing process is also developing with the development of these technologies. The development of plasma technology in atmospheric environment provides a new application prospect for plasma cleaning, especially plays an important role in automatic production.

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Influence of plasma etching on SM

Influence of plasma etching on SM

Integrated circuit chips are placed at a certain temperature for a certain period of time, but no current is applied. In some cases, we can also observe the presence of gaps or holes in metal wires, or even complete disconnection. This phenomenon usually occurs under the action of stress transfer (SM). When a metal is subjected to a mechanical stress greater than its yield stress, the metal will undergo a time-dependent plastic deformation. Under fixed mechanical stress, the continuous deformation over time is called creep, and the creep deformation will continue until the stress level falls below the yield stress or until failure occurs. In fact, stress transfer in IC is the metal atom transport process caused by mechanical stress, and its failure is usually driven by creep. In essence, it is the stress release in the chip metal interconnection layer, and one of the results of stress release is the formation of cavity in the metal layer. The mechanical stress is caused by many high-temperature processes in the metal interconnection of integrated circuits and the insulating layer protection process. Due to the different thermal expansion coefficients of metal materials and insulating materials, these high-temperature processes will introduce a large stress in the metal layer aluminum or copper, and the size of the mechanical stress is inversely proportional to the temperature. The nucleation or growth of the cavity in the metal layer caused by stress is a spreading process, which is proportional to temperature. Under the combined effect of mechanical stress and diffusion, the rate of cavity nucleation induced by stress transfer reaches the peak at a certain temperature. This temperature, depending on the properties of the conductor and the surrounding insulator, is generally about 150~200℃. Under the action of stress gradient, the void on the copper grain boundary moves and aggregates to form the void. The bottom of the copper interconnection through hole is a discontinuous structure composed of a variety of metal materials, and its stress is relatively small, so the vacancy tends to move and gather toward the bottom of the through hole. The surrounding copper grain boundary and the interface between copper and dielectric barrier layer provide the source of the vacancy. When a single through hole is placed on a wide copper wire, the effect is severe, because the wide copper wire can provide enough space for the cavity to grow and form a circuit break. The phenomenon of stress transfer can be described by the creep rate model proposed by McPherson and Dunn, whose failure time model is TF = B0 (T0) - nexp (Ea/kBT) (7 to 17) Where, T0 is the temperature of the metal without stress, and is approximately the temperature of deposition for Cu. N is the temperature difference exponential factor; Ea is the activation energy associated with metal diffusion. In engineering, the sample is usually baked at a specific temperature for a specific time, and the ratio of resistance change before and after baking is used to evaluate SM. TEM images of the samples with the contact resistance of the through hole increased by 85% and 200% after baking respectively show that when the cavity is just under the through hole, the resistance increases more greatly. According to the principle of Sm, the film deposition process has a great influence on Sm, such as the microstructure control of Cu deposition, the sputtering amount of the underlying metal during the deposition of metal barrier layer, the control of dielectric thermal expansion coefficient, the influence of alloys in copper, etc. The influence of etching on SM is mainly in two aspects. One is the morphology of the through-hole after etching. If a small palisade morphology appears at the junction of the groove and through-hole, the cavity will appear in the through-hole after copper filling, resulting in the early failure of SM. Second is a hole in the bottom of the polymer residues left much as well as to the bottom of the copper surface Treatment, such as Zhou discusses the different etching processing (Post Etch Treatment, PET) technology on the impact of SM, using N2 PET than CO2 / H2 gas can better remove polymer residues at the bottom of the hole, and to restore of copper at the bottom of the hole, significantly improve the performance of SM.

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2021 plasma cleaning machine FAQ

2021 plasma cleaning machine FAQ

CRF Xiaobian on 2021 plasma cleaning machine surface treatment common problems were discussed and summarized. 1. How much power is the plasma surface processor? Ordinary plasma equipment power around 600 w to 1000 w, some imported power to thousands of power, need according to actual situation to see whether can meet the production requirements, by definition is, the better the effect of power, the higher the processing, the corresponding price will be expensive, but it also depends on what kind of material, high power improper handling may also damage the material. 2. How long can the product be retained after the surface treatment of the plasma cleaning machine? Timeliness can keep how long time is according to the material of the product itself, suggest to avoid product by the secondary pollution, after plasma surface treatment on the next working procedure, so that we can effectively solve the problem of secondary pollution, improve product performance and quality, generally according to the material processing situation for a few minutes to a week is possible. 3. Whether harmful substances will be produced when plasma equipment is used: This problem also need not worry, because the plasma equipment in the operation has a complete protective measures, will be equipped with exhaust system, ventilated smoothly a small amount of ozone will be ionized by the air, so there is no harm to the human body. 4, plasma cleaning machine surface treatment equipment processing time: Plasma equipment modified the polymer surface chemically. Because of free radicals, the longer the treatment time of plasma equipment is, the greater the discharge power will be. It is necessary to test before on-line to master the appropriate treatment time of the product. The above is just a simple list of several common questions and answers, if you need to know more welcome to call consultation, we will have a professional plasma cleaning machine engineering for you to deal with the related problems.

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Effect of plasma etching on low-K TDDB

Effect of plasma etching on low-K TDDB

At advanced technology junctions, the dielectric interval of the metal layer in the back section is reduced to less than 100nm, and the introduction of low-K materials to reduce RC delay greatly reduces the mechanical properties of the dielectric and increases the number of defects. These adverse factors lead to more and more serious dielectric breakdown problems between metal interconnects. The TDDB of low-K is similar to the TDDB of gate oxide we discussed earlier, but it is also very different. One is that the gate oxide layer is longitudinal breakdown, and the graphical process has limited influence on it, but the low-k at the back section is generally transverse breakdown, and the Cd, morphology and LWR determined by the graphical process have a decisive influence on it. Secondly, the Cu chemical mechanical grinding process introduced in the copper interconnection will lead to metal ion residue and water vapor invasion, which are not found in the gate oxide layer. In addition, plasma damage to low-K during etching and metal barrier sputtering deposition is also unique to low-K TDDB. Although the dielectric spacing of the back segment is much thicker than the gate oxide layer thickness of the same node, for example, the gate oxide layer of the advanced technology node is only about 2nm, the dielectric spacing of the back segment can reach about 35nm, but due to the complex material properties and process, the low-K breakdown is no less challenging than the gate oxide layer breakdown. Low k material SiCOH leakage current under the condition of high temperature and high pressure stress change with time, the initial phase can be observed clearly the current decline, general is limited due to charge in the dielectric, with stress, keep up trap charge induced leakage current increase slowly, this phase will last a long time, until the current rapid increase, is the breakdown. The typical Cu/ Low-K breakdown mode is generally along the interface between Low-K and the overburden layer, and there is obvious Cu ion diffusion. Breakdown may be the breakdown of the internal bonds in the dielectric, or the diffusion of metal into the insulation. The failure time model is needed to extrapolate the test results from the high voltage to the low voltage, i.e. the operating voltage. There are two widely known models for dielectric breakdown of metal layers. One is the thermochemical breakdown model, in which the Si-O bond breaks at high pressure, which is intrinsic failure; the other is the charge injection model, in which the copper ion diffuses into the human dielectric and leads to breakdown, which is unintrinsic breakdown. For the back-segment Cu/ low-K structure TDDB, the influence of Cu electrode is very significant due to the high dispersion of Cu and the instability of copper oxide. At present, most people in the industry accept the latter model, also known as the interface breakdown model driven by current and catalyzed by copper ions. In this model, the accelerated electrons from the cathode are injected into the anode by either Schottky emission or Poole-Frenkel emission. The Schottky emission corresponds to the low electric field condition (<1.4 mV /cm), which is the thermal excitation of electrons across the barrier at the metal-dielectric interface. And Poole - Frenkel emission corresponds to the high electric field (> 1.4 MV/cm), for the dielectric in trap electrons into the dielectric in electric field enhanced thermal excitation conduction band, the high energy electron after reaching anode, will part with CuO occurs on the surface of the anode electrochemical reaction produces copper ions, and then Cu ion diffusion or under the action of drift in the dielectric in electric field, a kind of Cu ion motion path for low - k and the top layer of interface. If there is no CuO on the surface of the copper electrode, but only Cu atoms, basically no copper will be observed to enter the dielectric, so the choice of grinding fluid during CMP, copper surface cleaning after CMP, CuO reduction in H2 environment, isolation of water vapor to avoid water oxidation of Cu are very important for low-K TDDB. According to the Se and PF conduction current formulas and the assumption of the charge injection model that the damage degree of the dielectric is proportional to the amount of charge injected into the dielectric, the failure time when the dielectric damage reaches the critical point can be expressed as TF = Aexp (-ϒE) exp (Ea/kBT) (7-18) Among them, the ϒ for electric acceleration factor. Equation (7-18) is also known as the model root E of TDDB. The failure time of TDDB under low electric field can reach several years. More experimental results show that the failure time of Cu/ low-K structure under low electric field is closer to the failure time derived from the root E model, and the correctness of the root E model is confirmed through experiments. By increasing the porosi

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