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Low-temperature plasma etching for plasma cleaning machine

Low-temperature plasma etching for plasma cleaning machine

In the past few decades, semiconductor technology, represented by very large scale integrated circuits (ULSI), has been following Moore's Law with rapid development at technological nodes approximately every two years. Jack Kilby's 1958 INTEGRATED circuit had just five components, while Intel's mass-produced 10nm logic chip contained 100.8 million transistors on a 1mm2 chip. The development of semiconductor technology and the reduction of cost are inseparable from the increase of product circle size. The size of wafers has grown from 50mm to 300mm over the past 50 years, and may grow further to 450mm. The process of forming a chip from a single cut silicon wafer is complex. Lithography, Plasma Etch, thin film deposition (PVD, CV), chemical machinery research (CMP), ion implantation (1MP), etc. Plasma etching in plasma cleaning machine is one of the important processes in semiconductor production. Its importance and challenge have become increasingly prominent with the development of semiconductor technology. A prominent feature of low-temperature plasma etching is that the span of space scale and time scale is quite large, which requires micro machining operation in angstrom (A) on A piece of product circle with A diameter of 300mm. The timescale also ranges from nanoseconds in electronic response time to the macroscopic minutes needed for the entire wafer to be etched. This span of time and space can well reflect the challenges faced by vLSI manufacturing and plasma etching technology of plasma cleaning machine. The low temperature plasma technology of plasma cleaning machine has also been widely used in photoresist modification, material surface treatment, photoresist friendly, ion implantation and plasma enhanced chemical meteorological deposition technology.

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Changes of low-temperature plasma etching technology in plasma cleaning Machine in the era of 3D logic and memory

Changes of low-temperature plasma etching technology in plasma cleaning Machine in the era of 3D logic and memory

Since NAND was produced in 2014 and officially entered the 3D era (3 NAND), logic products also entered the mass production of 3D structure fin-type transistors in 2015. With the semiconductor industry stepping into the era of THREE-DIMENSIONAL structure, the traditional etching technology of plasma cleaning machine cannot meet the requirements of small-size complex process. Plasma cleaning machine etch machine manufacturer Eight Xianhai launched a variety of applicable THREE-DIMENSIONAL structure etching technology. For plasmas, the electron energy distribution (EED and Ion energy distribution (IED) can generally be characterized by two main lines. While EED typically controls electron temperature, plasma degree, and electron impact reaction, IED is controlling ion bombardment of the surface energy of the wafer that is key to optimizing etching patterns and reducing damage to the wafer. The commercial etching machines that have been introduced are mainly along the main line of EED to improve the fighting capacity of the etching machines. TEL's RLSA, for example, uses surface waves to excite plasma, which then spreads to the surface of a wafer. This machine is currently under development in the electronic temperature is very low, probably as low as 1.0eV. And on the company's Mesa even Hitachi 8190 xt company is by synchronizing pulses to achieve low electronic refund, synchronous pulse refers to the source of power and bottom electrode bias power synchronous switch, when in the closed position, a substantial reduction in plasma cleaning machine electrons in the plasma, the plasma from the original electron - ion into the ion - ion, at the same time because the disappearance of the electrode surface at the bottom of the sheath, and to better control the positive and negative from the plasma are provided. RLSA is realized with ion-ion plasma by diffusion in space, while Mesa/8190XT is realized with time (plasma switch). In principle, the RLSA electron temperature is lower, while Mesa/8190XT increases two means of regulating the plasma, namely the switching ratio and frequency of the synchronous pulse. Mesa is two rf power synchronous pulses, and 8190XT could theoretically be a microwave/RF synchronous pulse. Generally, the plasma etched by the plasma cleaner is electronegative, so in the ion-ion plasma state, the negative ion can be freed from the bondage and the positive charge on the wafer surface, so as to reduce the charge accumulation effect. Low electron temperatures reduce the dissociation rate, which reduces the energy that bombards the surface of the wafer, and reduces polymer production and vacuum uv release. Low electron temperature can narrow the width of ion energy peak, made it possible to precise control energy strike, thus improve choose ビ. In addition, in the plasma cleaning machine plasma closing time fresh air club can change the uniformity of the plasma, in addition, synchronous rushed technique can pitch by clearance rate and active group of flux and the flux, this ratio will influence the etching selectivity, the degree of influence is the etching and the specific gas has a strong correlation. Pulse etching of plasma cleaning machine began as reported by Boswell Professor in the Plasma Laboratory of Australian National University in 1985. Over the past 30 years, there have been about 50,000 articles on pulse etching, accounting for 15% of plasma etching. In addition to synchronous pulse technology, there are source power pulse, bias power pulse, Embedded pulse, and Delayed pulse, all of which are microtuned on EED or used in special processes. For example, the source power pulse generally has no bias, so it is suitable for the fine treatment (removal) of surface materials. In the case of bias power pulse, because the source power works continuously, the electronic temperature will not decrease with the pulse. If the reduction is needed, it is usually achieved by increasing the pressure in the reaction chamber, but the anisotropic etching ability will be weakened. However, this problem can be solved by combining with high power bottom bias. The current high bias pulse technology (US9059116) is available in the High-end Kiyo series of The Semiconductor Industry. Compared to the synchronous pulse, the particle energy Angle distribution (IEAD) in the plasma cleaning machine is similar to the synchronous pulse during plasma shutdown, thus reducing the charge accumulation effect. Embedded pulse is generally pulsed simultaneously with the source power and the bias power, but the bias power opening time is shorter than the source power opening time, which can reduce the high electron temperature peak of the synchronous pulse plasma at the opening moment. There are several kinds of stage-step pulse techniques, which are roughly when the source power is closed, the bias power de

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Chinese contributions to the development of plasma etching machines for low-temperature plasma cleaning Machines

Chinese contributions to the development of plasma etching machines for low-temperature plasma cleaning Machines

"Descendant of the dragon" has made great contribution to the development of plasma etching machine in the past half century. Silicon valley in 1999 published "hero" mentioned in the two and the low temperature plasma etching equipment development is closely related to the Chinese, one is Lin Jiebing Dr (David k., Lam) was born in China guangdong, in 1967 graduated from the engineering department of physics, university of Toronto after received the chemical engineering at the Massachusetts institute of technology (1970) and Ph.D. (1973) and increased in 1980, the United States, Lam semiconductor word, when the company went public in 1984 is already the world semiconductor equipment manufacturers. Dr Lin set out to come up with a model for wafer-wafer etching to ensure a more controlled etching environment. In the early stage of the development of the etching machine, he focused on the etching of relatively easy polysilicon materials with strategic vision, which enabled Pan Lin Semiconductor to rapidly develop the ICP of plasma cleaning machine with high quality, stability and high market share, and also bought time for the subsequent development of CCP machine. At the beginning of the 20th century, Panlin Semiconductor was consistently ranked among the top three in the market share of etching machines.   Another Silicon Valley hero associated with plasma etching is Dr. David Wang, born in Nanjing, China. He graduated from Central Plains University in Taiwan with a master's degree in chemical engineering in 1970 from the University of Utah and then a doctorate in materials science from the University of California, Berkeley. Since 1977, he has been engaged in plasma etching and chemical vapor bonding research at bell Laboratories headquarters in New Jersey. Then applied materials in the company President, chairman and CEO Jim Morgan (Jim Morgan) invited, joining applied materials inc. In 1980, over the next 25 years, there are hundreds of patents in its invention collection of single chip technology began to prototype the Smithsonian museum in Washington in 1993 water for a long time, this is displayed in the museum of Chinese invention design of machines. In the same room were bell telephones, Macintosh computers, and an IBM machine from the beginning. In 1983 he won the Semiconductor of the year award for the design of the etching machine for the Hexode-Type RIE plasma cleaning machine. The following year, he was awarded the SEMI Award by the Semiconductor Equipment and Materials Association for the development of plasma etching standards for the semiconductor industry. At the end of 1993 He was promoted to vice President of Applied Materials, managing global commercial operations. In 1994, he received the SEMI Lifetime Achievement Award for his contributions to the semiconductor equipment industry. Dr. Lin Jie-ping and Dr. Wang Ningguo have been selected to the American Silicon Engineering Association Hall of Fame.   Plasma etching equipment is the cornerstone to ensure high quality semiconductor products mass production. At the beginning of the 21st century, the mainstream plasma etchers were all foreign guns, and the U.S. government imposed export controls on semiconductor equipment in 1995, which meant that advanced etchers were not allowed to be sold on the mainland. Domestic plasma cleaning machine etching equipment manufacturing started in 2003, north of the North Microelectronics Company (founded in 2003) is committed to silicon etching machine development, south of the Micro semiconductor company (founded in 2004) began to build dielectric material etching machine. Both companies have many experts returning from overseas. Among them, Dr. Gerald Yin, CEO and chief executive officer of China Micro Semiconductor Company, graduated from The University of Science and Technology of China in his early years. He obtained his doctorate in physical chemistry from the University of California, Los Angeles in 1984 and now holds more than 70 foreign patents. The successful development of rainbow plasma etching equipment (dielectric etching) in the mid-to-late 1980s at Fanlin Semiconductor made the company one of the specialists in this field. In the early 1990s, I joined Applied Materials to be responsible for the r&d of plasma etching department of plasma cleaning machines. The products he develops or participates in account for approximately 50% of the plasma etching industry. His unique experience in the two major etching equipment manufacturers has enabled him to update and update the etching machines corresponding to different technology nodes. In 2004, he resigned as vice president of Applied Materials and returned to China to set up China Micro Semiconductor Equipment Co., LTD in Shanghai. CCP etching machine of plasma cleaning machine developed at present, with uHF and LOW frequency

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Operation method of reactive ion etcher made by plasma cleaning machine manufacturer

Operation method of reactive ion etcher made by plasma cleaning machine manufacturer

According to the RF (frequency-emitted) magnetic field applied to the chip disk, the plasma technology is started in the manufacturer system of the plasma cleaning machine. The field is generally set at a frequency of 13.56 MHZ and is released in the hundreds of Thales. The oscillating electrostatic field can weaken the molecular structure of electrolyte vapors according to the separation from electronic devices, which then leads to the plasma technology of reactive ion etcher.   In each of the circulatory systems present, the electronics accelerate from left to right in the chamber, sometimes colliding with the upper wall and chip disk of the chamber. In addition, in response to RF electrostatic field of reactive ion etcher, the relativity of ionization motion with higher quality is less. As the electronics are digested and absorbed into the chamber walls, they are simply sent to the road and remain in place throughout the system. Little do they know that the electronics stacked on the chip platters are positively charged because of their DC protection. The accumulation of such positive charges on the disc creates a large negative operating voltage, typically several hundred volts. Because of the relatively high concentration of positive ions compared with free electrons, plasma cleaning machine manufacturers plasma technology itself slightly positive.   Because of the large working voltage difference, the positive ions tend to drift toward the chip disk, where they collide with the test pieces of the etching process. Ionization produces chemical changes with the raw materials on the surface of the sample, but some of the raw materials can also be knocked out according to the transfer of some mechanical energy. Because the REion-etcher reflects most of the vertical transfer of ionization, it reflects that ionization etching can produce a very wide variety of etching process galleries, in contrast to the typical anisotropic gallery of wet organic chemical etching process.   The etching process standard in RIE system of plasma cleaning machine manufacturer is quite large due to many main processing parameters, such as working pressure, gas pressure and RF output power. The improved version number of RIE is a deep reflection of the ionizing etching process used to exploit shallow features.

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Plasma cleaning machine Assembly line plasma processor

Plasma cleaning machine Assembly line plasma processor

Plasma cleaning machine line plasma processor, the selection of plasma surface treatment equipment, which is what we call plasma machine, plasma cleaning machine. Principle said: plasma cleaning machine in the cleaning of the object is the role of gas, under the stimulation of the magnetic field and the surface of the object physical or chemical reaction, so as to achieve the purpose of cleaning. Cleaning surface is closely related to plasma and surface treatment equipment. In short, cleaning surface layer is in the surface layer of the material being processed to produce a new film, the hole on this film is invisible to the naked eye, this can greatly increase the area of the material, the indirect property can improve the adhesion performance, diffusion, and so on. Plasma processor is used to modify surface film, UV coating or plastic film, so as to improve its adhesion property, making it as easy as paper adhesion. The basic water-soluble gellan solution can make the coated board or light coated board obtain reliable adhesive force in the carton sticking machine, no need to use local covering, glazing and other processes, and no need to change different glue for different cardboard. By means of plasma surface treatment, not only its adhesion can be improved, but also high quality adhesion can be achieved. At the same time, it also improves the characteristics of surface diffusion and avoids the generation of bubbles, so that carton manufacturers can obtain more stable product quality with lower cost and higher efficiency. Plasma surface treatment is an effective method to clean and activate the surface of coatings, which can solve various problems in materials, including semiconductor wafers, plastics and metal materials. This technology can remove substances such as film remover and surface layer pollutants, and the activation process can ensure the quality of subsequent bonding process. This technology can be used to quickly and effectively pretreatment the material according to the actual process requirements. The plasma cleaning machine assembly line plasma processor is composed of generator, spray gun, main machine, etc., can work continuously for 24 hours, and can be used with multiple spray guns according to the actual production needs.

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Introduction of new resistive memory and the application of plasma etching in plasma Cleaning machine

Introduction of new resistive memory and the application of plasma etching in plasma Cleaning machine

Resistance changing Memory (Resistive Random Access Memory, RRAM) is one of the fast-growing non-volatile Memory, its storage mechanism and material is multivariate. The extensive use of metal and metal oxides means that the magnetotunneling metal material plasma cleaning machine etching problem will also be faced in the process of the graphics of resistive memory.   However, the storage mechanism of the RMS determines that the upper and lower electrodes of the RMS can adopt the same materials compatible with the logical process, thus greatly reducing the complexity and cost of r&d and mass production. The upper and lower electrodes (BE, Metal C, Metal D) and the resistive layer are all materials that will BE used in the logical back-end process. HfO2, TiN, Ti and W of the resistent layer are commonly used materials in logic process without cross contamination.   At present, RIE/ICP etching of plasma cleaning machine is still mostly used in the resistance memory, which is faced with problems such as too inclined etching profile of memory unit and serious lateral corrosion after etching metal electrode. Further progress should be made with subsequent process optimizations (power pulses, etc.) or the introduction of new reaction gases. Neutral beam etching (NBE) of plasma cleaning machine, which is unique in magnetic tunnel junction etching, is more inclined to form metal oxides in RRAM.

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