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Wide-width linear plasma cleaning machine

Wide-width linear plasma cleaning machine

Wide-width linear plasma cleaning machine is the market quality of intelligent environmental protection equipment, is the use of plasma cleaning equipment, in the use of the process, must comply with the provisions of the operation specifications, in the face of special use skills and methods of theoretical knowledge to learn in order to have a deeper understanding of wide-width linear cleaning machine.   Wide-width linear plasma cleaning function often on the product area cleaning processing, cleaning effect is very good. Plasma cleaning technology can be used to improve the adhesion of the outer layer of the material to be cleaned. After cleaning, it can also improve the antioxidant effect of the outer layer of the product, enhance the roughness of the outer layer of the material and improve the relative humidity of the outer layer. Some functional groups formed by the generation of free radicals can be formed in the cleaning stage. This composition can improve the adhesion and wettability of the outer layer of the treated parts. After plasma cleaning, the oxidation composition and pollutants in the outer layer can be removed.   No additional damage is done to the target during operation. If the traditional cleaning method is adopted, the product must be cleaned frequently to ensure the quality, inadvertently greatly increasing the production time. And choose wide linear plasma cleaning machine, a few seconds of time can achieve a product cleaning operation, and the cleaning effect is also very quality assurance, with the original automatic production line combination, but also can reduce the cost to a large extent.   With the help of the function of wide-width linear plasma cleaning machine, the target parts can be cleaned at any time without drying treatment, to improve the production efficiency, in addition to effectively clean the parts to be processed, but also to prevent the use of detergent to the human body caused by injury.

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Principle analysis of ultra-low temperature plasma etching technology for plasma surface treatment

Principle analysis of ultra-low temperature plasma etching technology for plasma surface treatment

Silicon structures with large aspect ratio, such as silicon groove, silicon through-hole, silicon vertebral array and silicon oxide groove, are mainly realized by the following two etching methods of plasma surface processor :1. Bosch etching process; 2. 2. Ultra-low temperature etching process.   Plasma surface treatment machine, Bosch Deep Reactive ion Etching (Bosch Deep Reactive lon Etching, Bosch DRIE) process happened at room temperature, using C4F8 produce protective layer and SF6 gas plasma isotropic Etching, alternative action to generate anisotropic great length-width ratio structure graphics, in the process of the structure of the side walls will be fanned wrinkles. This fan fold is caused by the lateral etching component produced by SF6 plasma etching at room temperature.   In the ultra-low temperature deep reactive ion etching process of plasma surface processor, the protective layer of by-products produced by O2 continuous plasma etching and SF6 plasma etching below -100℃ are used to form smooth structure graphic interval with large depth-width ratio. The main mechanism of low-temperature etching process is to independently control the etching reaction at the bottom and the side wall of the silicon groove, and realize higher silicon etching rate and higher silicon to photoresist etching selection ratio by changing the cathode voltage and reducing the temperature of silicon wafer substrate.   Cold plasma etching process, there exists a byproduct and polymer residues attached on the side wall of the graphics, so as to prevent further etching process, at the same time these by-products deposits on the inner surface of the etching chamber, has affected the further reaction of the surrounding environment, so that the etching rate change as the reaction time, lead to the whole process of etching extremely unstable, even might have an etched end phenomenon. So in the process of etching at room temperature, extra plasma cleaning steps have to be added. It is generally cleaned with O2 plasma to remove the by-products and polymer residues from the etching environment. For the plasma surface processor, the ultra-low temperature plasma etching overcomes this problem from the fundamental principle. In the ultra-low temperature etching process, the silicon wafer or graphical silicon substrate will be cooled to about -100℃, and then SF6/O2 plasma etching will be applied. Some inorganic byproducts containing SiOxFy are adsorbed and form the protective layer of the graphic side wall. When the reaction heats up to room temperature, these byproducts will be adsorbed under the condition of ion bombardment. Therefore, after the plasma surface processor etching, the graphics side wall and the etching cavity side wall will be self-cleaned. In addition, due to the simultaneous etching and side wall adsorption protection steps, the side walls of the feature pattern will become quite smooth. This simultaneous etching and guarding step also speeds up the etching process. Therefore, the process of SF6/O2 continuous plasma etching silicon substrate under ultra-low temperature is called standard ultra-low temperature process.   Precise control of the protective layer containing SiOxFy inorganic by-products forming the graphic side wall will be a key step in the standard ultra-low temperature etching process. Firstly, the content of O2 in SF6/O2 continuous plasma of the plasma surface processor needs to be controlled, so that the protective layer of the by-product can not only protect the graphic side wall, but also enable further plasma etching to take place at the bottom of the trench.   The etching rate comparison shows that the etching rate of photoresist and silicon oxide decreases with the decrease of temperature, especially below -100℃. However, the etching rate of silicon increases to a certain extent when the temperature is lower than -100℃, thus significantly increasing the etching selection ratio of silicon etching to silicon oxide and photoresist. Furthermore, more obvious anisotropic etching characteristics can be realized at temperatures below -100℃.   Therefore, the cathode temperature of plasma etching reaction of plasma surface processor can be lower than -100℃ as the standard of ultra-low temperature etching, and it can also be used as the starting point of subsequent process development and optimization. However, the low temperature process alone does not guarantee good anisotropic etching characteristics, even in the plasma etching process below -120℃. Isotropic phenomena also occur from time to time. So side wall protection plays an important role in reducing lateral etching. True anisotropic etching can only be achieved after the addition of a lateral wall covering to produce gaseous oxygen. In addition, it has been reported that ion bombardment is the decisive factor in many low-temperat

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Plasma cleaner plasma cleaning machine

Plasma cleaner plasma cleaning machine

Plasma cleaning machine dry cleaning, cleaning is a common concept in the electronic industry, it involves a process level, related to the removal of pollution sources, different parts of the cleaning method is different. In recent years, physical cleaning and chemical cleaning are widely used in mechanical manufacturing industry. According to the cleaning purposes, it can be divided into wet cleaning and dry cleaning. Plasma plasma plasma dry cleaning has been widely used in the industrial production of electronic products.   The key to wet cleaning is to use the effect of physical and chemical (organic solvent), such as adsorption, penetration, decomposition, separation, etc. to remove dirt with the physical properties of ultrasonic wave, spray, rotation, mechanical vibration, etc. This kind of cleaning function and application field are different, the cleaning effect is also different to some extent.   In the past, chlorofluorocarbons (CFCS) play a key role in cleaning efficiency and post-treatment, but they are limited by their damage to the ozone layer of atmospheric environment. Compared with the alternative technology, cleaning stage inevitably need to dry in the late (ODS cleaning does not need to be dry, but it will destroy the atmospheric ozone layer, limited use) and waste water treatment, need a lot of money for product safety in production, especially cleaning process of electronic components, precision machinery and equipment of high-speed development puts forward higher standards on cleaning process, pollution to air environment management has increased the investment cost of wet cleaning.   Plasma cleaning plasma dry cleaning has a considerable competitive advantage in this aspect, especially the cleaning process of plasma cleaning machine has been used in semiconductor materials, electronic devices, precision machinery and other manufacturing industries. Unlike wet cleaning, the basic principle of plasma cleaning is to remove contaminants from the surface by means of "activation" of plasma components. In terms of various cleaning methods, plasma cleaning is a thorough stripping cleaning method, a good way of environmental cleaning.

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Application of ultra-low temperature plasma etching technology for plasma surface treatment

Application of ultra-low temperature plasma etching technology for plasma surface treatment

Baklanov's team has reported that porous organosilicate material has been etched into plasma-surface processors at extremely low temperatures. This material is often used as insulation and filler in the Damascus process for semiconductor backends. It is found that when the plasma etching temperature of plasma surface processor is lower than -100℃, the low-k Damage generated in the etching process of the material will be sharply reduced, and its dielectric constant does not increase significantly, so that the material characteristics do not change significantly. At the same time, the damage of the etching process to the dielectric material under different bias pressure is compared. The low bias or zero bias ultra-low temperature etching of plasma surface processor can significantly reduce the PID of the material with low dielectric constant, and at the same time, the dielectric property of the material has no obvious change compared with that before etching.   Hess's team at Georgia Tech reported in 2015 that copper, gold and silver materials were etched at low temperatures in plasma surface processors using gas plasma etches. Conventional metal Cu etching uses Cl2 gas plasma to react with it at high temperature to produce CuCl2, which is then removed in the subsequent process. Hess's team reported the successful implementation of Cu etching in ICP etching chamber of plasma surface processor by using H2 gas plasma etching at low temperature (10℃). As shown in the scanning electron micrograph, the etching process uses SiO2 as the hard mask material to form the figure, and the 100nm thick Cu film etched by H2 gas plasma obviously forms the step-like structure, and Si substrate under the Cu film is exposed. In contrast to the Ar plasma etching process, the loss of Cu film after etching is not obvious. This indicates that unlike Ar gas plasma etching, which relies on physical bombardment of Cu films, H2 gas plasma etching mainly relies on chemical etching. During the reaction process, copper hydrides are formed and Cu metal bonds are destroyed, thus reducing the reaction potential energy. The hydride of the formed copper can be easily removed from the surface of the material and the reaction chamber. Similarly, Au and Ag are etched by H2 gas plasma or other H-containing plasma, forming metal hydrides that can reduce the reaction potential energy.   Ultra-low temperature etching process need hardware setup with normal plasma surface treatment machine inductively coupled plasma (ICP) etching device are very similar, just need to add liquid helium or nitrogen cooling device, makes the silicon wafer substrate temperature down to - 100 ℃, the use of SF, and O2 as the premise of plasma gas source, deep grooves or silicon Gao Shenkuan than silicon structure can also by Electron Cyclotron Resonance (Electron Cyclotron Resonance, ECR) etching. When the plasma surface processor increases the relative flow rate of O2 in the low-temperature ECR etching process, the silicon etching rate will significantly increase, and the ratio of F content to O2 content plays an important role in the etching process. Today and in the production process of plasma surface treatment machine, low temperature plasma etching process can not be widely used among the main difficulty is that in the actual production process is very difficult to keep the wafer substrate at low reaction temperature, the etching reaction cavity will be very complex, and change the silicon wafer in process temperature takes quite a long time, so that the effective Gao Changkuan than etching process cannot enter into industrial applications.

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Plasma equipment processing supplier

Plasma equipment processing supplier

Shenzhen Sing Fung Intelligent  Manufacturing Co., Ltd is a source manufacturer and supplier of plasma equipment, responsible for surface cleaning, activation, modification and etching of products to improve hydrophilic adhesion and other treatment. Atmospheric atmospheric plasma equipment consists of: generator, spray gun, host, etc., the important components of its vacuum plasma cleaning machine includes: control module, vacuum chamber and vacuum pump three aspects. Control mode has manual, automatic control, computer control, LCD touch screen operation and other modes. The control mode includes two parts: the control mode of switching power supply and the control mode of automatic control system. In terms of power supply, it consists of several working frequencies such as 40KHz, 13.56MHz and 2.45GHz. The automatic control system is composed of buttons (manual, automatic), computer control, PLC control (LCD touch screen controller) and other modes. Different suppliers have different equipment configurations.   Technological advantages of plasma equipment: 1. Use innovative technology and make the processing and manufacturing process simple. The transport will start after starting up, and is very limited by working conditions. 2, environmental protection and energy saving, no industrial equipment, small air friction resistance, low power consumption. 3. Wide range of applications. Machine and equipment can be started immediately without being affected by temperature. When the temperature is around 250℃, it can be transported correctly under the working environment of fog, and when the temperature is from -50℃ to +50℃, it can still be transported correctly. 4, the long service life of mechanical equipment, equipment is composed of stainless steel, copper alloy, epoxy resin and other materials, strong oxidation resistance, choose corrosion resistant materials, fundamentally solve the problem of corrosion resistance of mechanical equipment. 5. The operation is simple and clear, and the next process will be carried out after the product is processed, with almost no labor cost in the processing link. 6. Low failure rate of plasma equipment.

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Influence of plasma etching on HCI in plasma equipment

Influence of plasma etching on HCI in plasma equipment

The HCI in the reliability of plasma etching process refers to the degradation of device performance caused by high-energy electrons and holes injected into gate oxide layer. The interface state and oxide layer trap charges will be generated during injection, causing damage to the oxide layer. With the deepening of the damage degree, the current and voltage characteristics of the device will change. When the variation of device parameters exceeds a certain limit, the device will fail. The inhibition of hot carrier effect depends mainly on the choice of suitable source and substrate concentration, and the method of Lightly Doped Drain area (LDD) can be used to suppress the hot carrier effect quite well. Li studied plasma equipment such as plasma related process after injury grid oxide layer, the HCI performance significantly worse, this is because in the process of plasma equipment of plasma technology, grid will flow through a certain amount of current in the oxygen, the charging current will cause new oxide traps and interface state, when the hot carrier injection of oxide layer damage more easily.

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