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Led plasma cleaning machine

Led plasma cleaning machine

During the production of LED, metal oxides and air pollutants on the surface will reduce the stability of the product and cause harm to the product quality. If the surface is treated with plasma cleaner technology before packaging, contaminants and oxides can be removed. Led, the general name of the light emitting diode, generally used for display lights, broadcast messages, etc., it can not only instantly electromagnetic energy into light energy, but also has hundreds of thousands of hours of life cycle, has not broken, energy saving and other advantages. The difficulties in LED processing are as follows: 1. Unable to remove air pollutants and oxides. 2. There is a small gap between the support frame and the colloid, which will cause led oxidation failure after the gas enters the electric level and is stored on the surface of the bracket for a long time. Cleaning strategy using LED plasma cleaning machine: 1. Before applying the silver gel. The air pollutants on the substrate will make the silver adhesive spherical, which is not conducive to the integration of IC chip, easy to lead to chip damage, the selection of plasma cleaning machine cleaning can further improve the roughness and hydrophilicity of the product workpiece, is conducive to the dispersion of the silver adhesive and chip bonding, in addition, can greatly save the amount of silver adhesive, control the cost. 2. Lead bonding. When the LED chip is attached to the substrate, the pollutants will include particles and metal oxides produced by physical and chemical actions, resulting in incomplete chip and welding or poor bonding, and insufficient bonding compressive strength. In order to improve the compressive strength and tensile symmetry of the adhesive, plasma cleaning was carried out before the adhesive bonding to improve the adhesion ability. In addition, it can also reduce the bond temperature in some special cases, thus increasing the production control cost. 3. Before sealing. When injected with epoxy resin, the surface pollutants can produce a large number of bubbles, which can reduce the quality and service life of the product. Therefore, the prevention of bubbles in the sealed state is also a problem. By using plasma cleaning, LED chips and substrates will be inseparable with adhesive bonding, greatly reducing the generation of bubbles, and significantly improving the heat dissipation rate and light emission rate.

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Influence of plasma Etching on GOI/TDDB in plasma Cleaning Machine

Influence of plasma Etching on GOI/TDDB in plasma Cleaning Machine

Gate Oxide Integrity (GOI) generally refers to the time breakdown (TDDB) test of Gate silicon Oxide capacitance at constant voltage. With the continuous reduction of MOS circuit size, the gate oxide layer becomes thinner and thinner, and the decrease of power supply voltage cannot be synchronized with the gate oxygen thinning, which makes the gate oxide layer need to work under high electric field intensity. The breakdown of gate oxide layer is an important mode affecting the reliability of MOS devices. Usually, the breakdown of the oxide layer is instantaneous under high voltage, but in fact, even if the applied voltage is lower than the critical breakdown electric field, the breakdown will occur after a period of time, which is the breakdown of the oxide layer. A large number of experiments show that this kind of breakdown is closely related to the applied stress and time. In HKMG technology, Gate Dielectric materials by high - k hafnium oxide instead of silicon oxide, GOI was renamed the GDI (Gate Dielectric Integrity). Actual CMOS device will have various defects in gate oxide, including plasma cleaning machine plasma generated when the oxide layer deposition or follow-up process into the trap charge and movable ions, pinhole, silicon particles, coarse interface, thinning of the local thickness, oxide layer is weak, the physical defects in certain electrical and thermal stress under the action of will lead to the dielectric breakdown, is a major cause of TDDB produce. By improving the plasma equipment process and raw materials of plasma cleaning machine, the influence of random defects can be reduced, so that the oxidation layer breakdown is mainly determined by the properties of materials, at this time the failure is intrinsic failure, is the focus of various plasma cleaning machine plasma equipment research. One is that at constant voltage, a bond at the interface between the dielectric material and the gate or silicon substrate breaks, resulting in a trap, followed by hole and electron capture. After a relatively long period of degradation, electron capture continues until local Joule heat forms a conductive fuse in the dielectric material, resulting in a short circuit between the gate electrode and the silicon substrate, i.e., a short circuit between the cathode and the anode, resulting in the dielectric layer being broken down. A complete unified model to accurately describe the gate oxide layer breakdown has not been obtained so far, but two empirical models are widely used to describe the TDDB failure mechanism of oxide dielectric layer, one is the E model based on the electric field driving theory, the other is the 1/E model based on the electric current driving theory. Model E is also known as the thermochemical model. The model holds that TDDB occurs at low field intensity and high temperature because the electric field enhances the thermal fracture of atomic bonds of dielectric materials, and the added electric field makes the polar molecular bonds elongate, thus weakening the bonds and making them more likely to be destroyed in the standard Boltzmann thermal process. The degradation rate increases exponentially with the electric field because the presence of electric field reduces the specific energy of molecular bond fracture. When the local density of the broken bond or seepage point is high enough, a conductive path from anode to cathode will be formed. At this time, failure will occur, and the corresponding time is the failure time. The inverse relationship between the failure time and the degradation rate is, so it decreases with the electric field strength index, which can be expressed in the following form TF = A0exp (- ϒ Eox) exp (Ea/kBT) (7-10) Among them, the ϒ electric acceleration factor; Eox refers to the electric field intensity in oxide dielectric layer; Ea is activation energy; KB is Boltzmann constant; A0 is the coefficient related to material and process, and the value of different devices is different. The property of A0 makes TF become a distribution, which is generally weible distribution. The 1/E model is also known as the anodic cavity injection model. According to the model, under the applied electric field, the electrons injected by Fowler-Nordheim(FN) tunneling effect accelerate from the cathode to the anode, passing through the dielectric layer and causing damage to the dielectric layer. Moreover, when the accelerated electrons arrive at the anode, electron hole pairs are generated in the silicon at the anode interface by collision ionization, and some of the high-energy holes are injected into the valence band of the oxide layer. Under the action of electric field, these holes migrate back to the cathode interface, resulting in degradation of the oxide layer and breakdown. Both electrons and hot holes are the result of FN tunneling effect, and the exponential relationship between the failur

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Plasma surface treatment equipment for the use of bottled compressed gas introduction

Plasma surface treatment equipment for the use of bottled compressed gas introduction

Compressed gas is a key component of industrialization. The compressed air commonly used in industrial production includes air compression and bottled compressed gas. Air compression is called the second power plant, only secondary to power engineering, it is also a multifunctional processing process gas; Industrial grade bottled gas is generally packaged in controllable gas bottles, the standard pressure is 13-15MPa, with the advantages of saving indoor space, safety and conducive to transportation. The compressed gas will be based on the application of specific working pressure reduction and stable working pressure, so how should the pressure of the gas of the plasma cleaner be regulated? Gas pressure control is one of the key factors to ensure the normal operation of plasma cleaning machine. Gas cylinder decompresser is a kind of equipment that changes the high pressure vapor body into the low pressure vapor body in the gas. The processing process vapor body applied by cleaning equipment is mainly the high pressure vapor body of the bottle, so as to ensure the reliability of various processing techniques and operation reliability. Generally, according to the use, the high pressure vapor body will be reduced to 0.2-0.4Mpa. In the application, it is necessary to ensure the tightness of the connection between the cylinder and the pressure reducer. The raw material belt is used as the sealing medium, and the thread of the cylinder mouth is wrapped when the reducer is installed on the cylinder. It is proposed to choose 3/8 interface to replace the original vertical connecting head, and choose the quick torsion connecting head or double jacket connecting head to ensure the tightness between the steam output pipe and the plasma cleaning machine. If the chemical gas is argon, it is suggested to decompress with oxygen. The reason is that the output working pressure of the argon gas decompressor is generally 0.15MPa. For example, if a bottle of gas is supplied to several cleaning machines, the output working pressure cannot be met, which is very easy to cause the working pressure alarm of the machine and equipment. Pneumatic pressure regulating valve is the key component of pneumatic control, its role is to manipulate the external vapor body in the required pressure, to ensure that its working pressure and flow stable. Whether it is vacuum plasma cleaning equipment or atmospheric pressure equipment input gas need to install pressure regulating valve, in order to ensure the cleanliness of the vapor body in the application. In order to facilitate the observation of air pressure, a barometer or a pressure regulating valve with a barometer should be installed on the pressure regulating valve. If you want to show an underpressure protection alarm, you can also select an alarm barometer or add a pressure controller. Pipeline throttle valves are commonly used in atmospheric plasma cleaning equipment, which can be used to adjust the size of the vent to achieve pressure and flow monitoring. The use of most of the fast fast plug joint, small volume. Atmospheric pressure plasma cleaning machine commonly used processing technology vapor body is a kind of clean compressed air, can also decide which kind of gas to use according to the effect of the treatment of products, the stability of the gas working pressure is far less than the vacuum cleaning machine. In addition, you can install a monitoring system if you want to view in real time.

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Influence of plasma etching on NbTi in plasma equipment

Influence of plasma etching on NbTi in plasma equipment

Negative bias temperature instability (NBTI) refers to the instability of device parameters such as VTH, GM and IDSAT of PMOS when operating at high gate negative bias and temperature. If it is NMOS device, corresponding to PBTI, positive bias temperature instability. The NBTI effect was discovered in 1961. Plasma etching effect on NBTI plasma equipment or pretty big, NBTI effect is the main reason, plus negative on the PMOS transistor gate bias, after a certain time of negative grid bias and temperature stress, the PMOS transistor in the Si/SiO2 interface, a new interface interface potential increase, because the hole captur

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How high temperature will be generated by plasma cleaning

How high temperature will be generated by plasma cleaning

Plasma cleaning machine is the use of low temperature plasma on the surface of the product treatment, cleaning process will produce how high temperature, the temperature is 35 degrees Celsius to 120 degrees Celsius or even higher. As we all know, ice turns into water at minus zero centigrade. If the water temperature rises to one hundred percent, ice turns into steam. With the increase of temperature, the material generally has the whole solid-liquid gas transition process. What happens to the state of the gas as the temperature increases? As the heat release of the material accelerates, the collisions between them lead to the ionization of the molecular structure of the gas, turning the material into positive ions and electrons, which can move around and interact with each other. The material becomes plasma. Since the positive ions and electrons always come in pairs, the total amount is about the same, and the charge balance is neutral. We can define it as an ionized gas, which has almost the same density of positive ions and electrons. Plasmas can also be produced at zero cosmic pressure of -270 degrees Celsius, which doesn't need to be kept at a constant temperature, and can also be produced at room temperature, like the gas in the tube of an electric pen. There are many kinds of plasma temperatures, some of which are extremely cold and produce a plasma cleaning temperature that you can touch directly with your finger, and the temperature of the plasma of the sun is very high. Twinkling electrodes, stellar nebulae, interstellar space, known to exist at temperatures of around 1300 degrees Celsius, which is comparable to the temperature of molten iron. Curved and high-frequency plasmas are called thermal plasmas due to their high energy and are used for material synthesis, densification and coating protection. The temperature of the cold plasma heavy particles is only the indoor temperature, and the temperature of the electron is as high as hundreds of thousands of degrees, far from the thermal equilibrium state, so it is especially suitable for making arc discharge, glow discharge and other equipment, belongs to the cold isoion type.

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The influence of plasma etching on PID

The influence of plasma etching on PID

Plasmae Induced Damage (PID) refers to the performance deviation of MOSFET devices caused by various plasma processes in integrated circuit manufacturing. In the plasma environment, due to the discharge of a large number of ions and electrons, ions are accelerated and move towards the surface of the wafer due to the action of electrode potential or plasma self-bias, they have physical bombardment to the substrate and promote the chemical reaction on the surface. These ions and electronic currents are collected by the metal exposed to the plasma, which accumulates at the gate electrode of polycrystalline silicon or aluminum. At this time, the metal layer acts as an "antenna". The gate oxide layer can be regarded as a capacitor. Under the action of FN current, the gate oxide layer and interface will produce defects, the resulting damage will lead to the reduction of IC yield, and will accelerate the degradation of hot carrier and TDDB effect, causing long-term reliability problems of devices. The degradation of gate oxide layer caused by charging effect is a serious problem in IC fabrication. There are several main mechanisms causing PID: (1) Plasma density. Higher plasma density means higher current Under the charge-induced damage model, higher plasma density is more likely to cause PID problems. Krishnan et al. found that when the height of ICP metal etching reaction chamber was reduced from 8cm to 5cm, the electric field intensity on the wafer surface was significantly enhanced. The increase of plasma density leads to charge charging, which causes serious device damage. (2) Local inhomogeneity of plasma. In a uniform plasma, ion and electron currents balance in one RF cycle, so the gate oxide potential is very small, but in an inhomogeneous plasma, the potential imbalance in a local range will generate current paths on the surface of the wafer, which will cause the gate oxide damage. (3) Eletron Shading Effect. Electrons in plasma have worse directionality than ions, that is, the incidence Angle distribution of electrons is larger than that of ions, which is easier to be blocked by photoresistance. The positive ions gather in the front end of the etching to form the positive potential of the device. (4) Reverse Electron Shading Effect. ESE occurs in areas with dense patterns, such as patterns with spacing less than 0.5μm. On the contrary, in the open region of the pattern, such as the pattern spacing greater than 2μm, due to the isotropy of the electrons. Some of the electrons are collected by the side wall of the metal to be etched, while the ions are not, resulting in a negative charge accumulating on the side wall of the metal forming a negative potential against the device. (5) VUV Radiation. A large number of VUV photons are produced during plasma discharge, which causes photocurrent in the gate oxide layer and damages the device. Si3N4, which has a narrower band gap than Si3N4 at the top of the gate, can effectively absorb and block high-energy VUV, so as to protect the gate oxide layer from damage by VUV radiation. Studies have shown that when the Ratio of Antenna area to device size is larger, the damage of the device is more serious. Antenna ratios of different sizes can be designed to compare the damage degree of the device caused by different plasma processes. Generally, gate leakage current is used to characterize PID. Taking NMOS as an example, the greater the leakage current, the more serious the PID caused by positive charge. In circuit design, the influence of PID can be effectively inhibited by avoiding high antenna ratio, adopting metal jump layer or using protective diode to introduce charge into the substrate, and the antenna ratio that can be tolerated by the device can be improved by process optimization. Zhou et al. independently tested and analyzed the PID introduced in each layer metal manufacturing process to study the influence of various back-stage etching processes on PID. The dielectric etching of the metal layer charges the metal antenna of the contact hole, and the PID problem is generated when the antenna ratio of the contact hole is very small (e.g. 20), while the PID problem is generated when the antenna ratio of the high level metal is several thousand. The longer the over-etching time of metal layer is, the worse the PID will be. The higher the ratio of high frequency power to low frequency power is, the worse the PID will be. When the power supply is replaced with a higher frequency power supply, the more serious the PID problem will be, because the higher the power supply frequency is, the higher the plasma density is, the more serious the corresponding charge aggregation phenomenon is, so the worse the PID will be. However, the high frequency power is very important for the control of polymer by-products in etching, so the choice of frequency should be carefully weighed. For the passivation layer etching, the influen

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