图片名称

NEWS

Popular Articles

Contact Us

图片名称
图片名称

Service Hotline

13632675935

CRF

TEL：13632675935

E-mail：shaobo@sfi-crf.com

Address: 1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

Effects of gas added by plasma equipment manufacturers on methane conversion reaction in plasma

Effects of gas added by plasma equipment manufacturers on methane conversion reaction in plasma

In order to reduce carbon deposition and further improve methane conversion rate and C2 hydrocarbon selectivity, the effects of various added gases on the reactions have been studied. Chen Dongliang et al. used microwave plasma technology to study N2 to promote methane coupling reaction, and the results showed that the production of C2H2 changed with the increase of N2, and the production of C2H6 and C2H4 decreased slightly, and HCN was detected in the reaction products.   Liu et al. used DC and AC corona discharge plasma technology to study the methane coupling reaction in the presence of oxidizing gas O2. When the frequency was 30 Hz, the voltage was 5 kV, and the gas flow rate was 100 mL /min, the methane conversion rate was 43.3%, the C2 hydrocarbon selectivity was 48.3%, and the C2 hydrocarbon yield was 21%. Studies of plasma equipment manufacturers show that CO and CO2 production are different in the products according to different ways of oxygen addition. The addition of other gases such as CO2 can inhibit the deep oxidation of methane, H2O can improve the conversion rate of methane, but the selectivity of C2 hydrocarbon decreases. The use of hydrogen plasma atmosphere in plasma equipment manufacturers is conducive to the activation and conversion of methane. With the increase of hydrogen mole fraction in raw gas, the conversion rate of methane and the yield of C2 hydrocarbon increase, and the carbon deposition decreases.   It can be seen from the experiments of plasma equipment manufacturers that the properties of added gases have a great influence on the product distribution. Reducing gases such as hydrogen can promote the formation of C2 hydrocarbon products; oxidizing gases such as oxygen are conducive to the formation of oxidation products CO and CO2; and HCN is detected in the reaction system containing nitrogen. This indicates that the added gas not only plays the role of diluting the reaction gas in the reaction system, but also directly participates in the reaction process as a gas catalyst or reactant.

MORE +
Plasma-flame machine Rubber surface treatment process

Plasma-flame machine Rubber surface treatment process

By means of physical and chemical reactions between high-energy particles of plasma flame machine and the surface of organic material, activation, etching and decontamination of the surface of the material can be realized, and various surface properties of the material, such as friction coefficient, adhesion and hydrophilicity, can be improved. Plasma-cleaning machine is used to modify the rubber surface, which can obviously improve the adhesion between components, and the quality is stable. Compared with the traditional polishing process, plasma flame machine surface treatment technology has the advantages of simple process flow, easy operation, high processing efficiency, energy saving, environmental protection, health and safety, etc., and has a wide range of application prospects in the field of rubber bonding.   The adhesion of half parts is an important index in the production of multi-part rubber products, such as tires, and the adhesion quality is especially important in the forming process. At present, the adhesion of half parts mainly depends on its own adhesion in the process of production, and the adhesion effect can be improved by grinding the surface and brushing the glue pulp. The bonding performance of the semi-finished product is influenced by the environment (such as temperature, humidity, light, ventilation, etc.) as well as the expiry date of the binder and dust. The operation process of glue or oil coating is complicated, which requires many process points and is greatly affected by temperature, humidity and other factors. In the season with large temperature difference, the adhesive quality fluctuates easily. At the same time, there are serious defects such as not environmental protection and hidden danger of affecting operator's health and safety.   Nowadays, low-temperature plasma technology of plasma flame machine is widely used in the surface treatment of materials in the automobile industry. It modifies the parts of automobile such as instrument, seat, engine, rim, paint and rubber seal. The practical application shows that this technology is very effective in improving the surface performance of parts and has been favored by many parts and automobile manufacturers.   Plasma flame machine at the time of activation product surface molecules on plasma surface treatment, won't destroy the structure of the product, whether all kinds of silicone products or special printing material such as rubber, after plasma surface treatment, can improve the product surface adhesion, reduce the traditional way of handling damage, reduce production costs, more can be applied to the original can't printing materials, for clients to develop new markets, create new value.

MORE +
Plasma surface processor atomic layer etching technology

Plasma surface processor atomic layer etching technology

With the decreasing of device size, semiconductor manufacturing industry has gradually entered the stage of atomic scale. Over the next 10 years, the acceptable range of characteristic size changes will be required to be within the order of three to four silicon atoms. The non-uniformity of device size will greatly affect the stability, leakage current and battery power loss of the whole device, resulting in device failure and yield reduction. In order to control the etching process accurately and improve the etching result, the atomic layer etching technique has been developed and studied. Although atomic-layer etching has been reported for more than 20 years, its rate of etching is relatively slow compared with traditional etching, and the low yield of etching process restricts its application in semiconductor manufacturing industry. However, with the development of three-dimensional structure fin-transistor technology, the homogeneity of atomic layer etching technology and the selection of ultra-high, plasma surface processor has been applied well in some key etching processes.   The atomic-layer etching technique of plasma surface processor (PSMP) is considered as a promising method to realize etching at atomic level, which is due to its self-limiting behavior. Self-limiting behavior means that the etching rate gradually slows to a stop with the increase of etching time or reactant input. An ideal atomic layer etching cycle can be divided into the following four stages: (1) inject reaction gas into the cavity, modify the surface of the material to form a single layer of self-limiting layer; (2) stop the reaction gas, and vacuum pump to remove the excess gas did not participate in the reaction; (3) High-energy particles are injected into the cavity to remove the single-layer self-limiting layer so as to realize self-limiting etching behavior; (4) Stop feeding high-energy particles, use the plasma surface treatment machine vacuum equipment pump to remove excess particles and etching by-products not involved in the etching.   For each cyclic reaction A and B in the actual atomic layer etching process, the ideal single-layer self-limiting etching process is difficult to be realized. Reaction A includes four different surface modification mechanisms, namely, chemisorption, deposition, conversion, and stripping. Reaction B mostly needs plasma assistance, and ions are used for anisotropic etching to obtain the etching structure with high aspect ratio. Plasma surface processors have been developed from atom etching to date and have been proven to be suitable for more than 20 different materials, including semiconductors, insulators and metals. It is believed that in the near future, it will be applied to more materials etching.  

MORE +
Plasma surface processor Polysilicon gate etching

Plasma surface processor Polysilicon gate etching

When the CMOS process extends to 65nm or below, the etching manufacturing of plasma surface processor gate faces many challenges. As a key technology to control channel length, the pattern of polysilicon gate is closely related to the performance of the device, which affects the whole body. Moore's law promotes yellow light graphics technology from 248nm wavelength light source technology to 193nm wavelength light source technology. This transition was achieved in 2012 with a graphics resolution of 30nm. However, the chemical composition of 193nm photoresist is very different from that of 248nm photoresist, and its anti-etching ability is poor under harsh plasma environment. In order to ensure the exposure process window, the 193nm photoresist is needed to be thinner. In this case, grid graphic dimension control, such as feature size, line width uniformity, wall Angle, side wall shape (concave, protruding) and line width roughness, etc. are all process parameters requiring strict control.   The problem of grid wall roughness can be easily caused by the inorganic hard mask (generally silicon nitride) etching method used by traditional polysilicon gate plasma surface processor. On the other hand, in order to solve the depletion layer problem of polysilicon gate, the polysilicon film layer needs to be doped in advance, which is generally phosphorus doping. Due to the concentration of the doping on the upper part of the polysilicon by ion implantation through the plasma surface processor, severe necking phenomenon occurs when the polysilicon gate is used to remove the hard mask with hot phosphoric acid. Because of the above problems, polysilicon gate etching turned to soft mask etching after 65nm. The etching of traditional polysilicon gate is dominated by halogen gas elements, such as Cl2 and HBr. Predoped polysilicon also has shrinkage phenomenon in halogen gas etching. Han Guo-Lee et al. explained this phenomenon in literature by doping and the coulomb forces of atoms or molecules of halogen gases. The coulomb force of mutual attraction between N-type doped phosphorus or arsenic and chemisorbed halogen gas will increase the etching rate of polysilicon doped plasma surface processor, thus causing shrinkage phenomenon. Zhang et al. studied the effect of HBr/Cl2, HBr/O2 and CF4 on the etching rate of N-type doped polysilicon. The difference of etching rate of CF4 gas in N-doped polysilicon and undoped polysilicon is small, within 5%. The etching rate difference of HBr/O2 is more than 20%, while the etching rate difference of HBr/Cl2 is between the two, about 13%. Therefore, it is a better choice to use CF4 when etching n-type doped polysilicon located in the upper half of polysilicon gate. Because poly gate lithography to stop on the gate oxide silicon, so when using the CF4, gas was fed main etching step after etching the upper half of doped polysilicon, etching the remaining 20% of the lower part of the polysilicon gate etching steps we need to adopt gets/O2 gas etching, in order to realize the plasma surface treatment machine polycrystalline silicon etching high selectivity of gate oxide silicon. As mentioned above, the etching rate of HBr/O2 on N-type doped polysilicon is 20% higher than that of non-hetero polysilicon, which is prone to generate neck shrinking effect. Therefore, the over-etching amount of HBr/O2 should be strictly controlled, generally 30% is better. Too little over-etching amount will lead to long feet on the side wall bottom of the polysilicon gate, and too much over-etching amount will lead to the enhancement of upper neck shrinking effect.   Although HBr/O2 etching process with a higher etching selection ratio for gate silicon oxide is used in plasma surface treatment, it is still easy to cause silicon perforation and silicon damage. The occurrence of silicon perforations is generally due to excessive etching in the main etching step, the touch of gate silicon oxide, or the decrease of etching selection ratio due to the insufficient optimization of HBr/O2 process. However, the Silicon damage caused by polysilicon grid etching is usually detected by transmission electron microscope without corrosion Recess. The cause is not directly related to the etch selection ratio. Due to the decrease of saturation current caused by silicon damage, it is necessary to strictly control the bulk silicon damage during any polysilicon gate etching. Principle of bulk silicon damage caused by polysilicon gate etching in plasma surface treatment Due to the consideration of equivalent silicon oxide thickness, the gate oxide layer is as thin as 1~2 nanometers in the process below 65nm. In HBr/O2 plasma, HBr decomposes hydrogen ions, because the mass of hydrogen ions is very small, under the acceleration of the electric field, high-energy hydrogen ions can pass through gate silicon oxide and inject into the bulk silicon up to 10nm deep, causing dislocat

MORE +
Application of plasma cleaning machine in the photoelectric industry

Application of plasma cleaning machine in the photoelectric industry

Before the silver adhesive is applied: the pollutants on the substrate will cause the silver adhesive to be spherical, which is not conducive to the adhesion of the chip, and it is easy to cause damage to the chip in use. Using plasma cleaning can greatly improve the surface roughness and hydrophilicity of the workpiece, which is conducive to tile and patch, and can greatly save the amount of silver adhesive and reduce the cost.   Before lead bonding: the chip is attached to the substrate. After curing at high temperature, the pollutants on the substrate may contain particles and oxides, etc. Due to physical and chemical reactions, the welding between the lead and the chip and the substrate is incomplete or poorly adhered, resulting in insufficient connection strength. Plasma cleaning machine can improve the surface activity of the lead before connection, so as to improve the bonding strength and tension uniformity of the lead.   Before LED sealant: When LED is injected with epoxy glue, pollutants will lead to higher bubble formation rate, thus reducing product quality and service life. Therefore, it is also worth paying attention to avoid bubble formation during post-sealant. Plasma cleaning machine after plasma treatment, chip and substrate close combination, better combination with colloid, the formation of bubbles will be greatly reduced, but also significantly improve the heat dissipation and light rate.   It can be seen from the above points that the surface activation of the material, the removal of oxides and particulate pollutants can be demonstrated by the tensile strength and infiltration characteristics of the bonded leads on the surface of the material.   Plasma cleaning machine has nanoscale cleaning capacity, the surface characteristics of the sample will change under certain conditions. As gas is used as cleaning medium, it can effectively avoid the re-contamination of the sample. Plasma cleaning machine can not only enhance the adhesion, compatibility and wettability of samples. At present, plasma cleaning machine has been widely used in the fields of optics, optoelectronics, electronics, materials, polymers, biomedicine, microfluidics and so on.

MORE +
Technology principle of plasma nitriding equipment

Technology principle of plasma nitriding equipment

General plasma nitridation process requires gas pressure of 3~10mbar to ensure complete contact between plasma and substrate. For the substrate with complex shape, such as surface trench or thread, the distribution of plasma nitride equipment parameters near the complex shape will be different to some extent, causing changes in the surrounding electric field, thus changing the ion concentration and ion bombardment energy in the region. If conventional plasma nitriding is used, ion collisions are more likely to occur in the plasma sheath, resulting in reduced ion energy and more difficult to activate oxide metal surfaces such as stainless steel. The complex shape of the substrate conditions can also lead to regional temperature overheating and the nitriding characteristics are different from other substrate conditions. However, due to the abnormal glow discharge caused by conventional plasma nitriding process, the discharge parameters are interrelated and coupled, so it is impossible to control the nitriding process by changing one discharge parameter alone.   To solve this problem, the researchers developed a low-pressure plasma that does not glow abnormally when the pressure is below 10PA. In the presence of radio frequency, the filament produces a series of low-pressure plasmas that fill the processing space and contain a large number of active atoms, thus increasing the efficiency of nitriding. In the nitriding process of RF plasma equipment, the generation of plasma is separated from the control of substrate bias, so ionic energy and substrate surface flux can be controlled separately. Because the working pressure is low, the amount of air consumed is reduced accordingly.   NH atoms are nitrated using a low-energy DC glow discharge. These highly active atoms are used for nitridation. The whole process requires an external power source to heat the workpiece in a process similar to gas nitridation. The process can not only control the surface topology, but also select whether the composite layer is formed, and control the thickness of the composite layer and the depth of the diffusion layer without changing the surface structure characteristics. If there are narrow cracks and holes in the metal surface, nitriding can be easily achieved by this process.   Conventional plasma nitriding processes use DC or pulse abnormal glow discharge. The nitriding effect is good in low alloy steel and tool steel, but bad for stainless steel, especially austenitic structure stainless steel. The nitriding process precipitates CrN at high temperatures, so the metal surface is very hard and wear resistant, but the disadvantage is that it is easy to corrode. The modified layer prepared by this process contains a nitrogen-rich layer called extended austenite, which has been successfully solved by low temperature and low pressure discharge technology.

MORE +
< 1...101112...44 > proceed page
图片名称

CRF

National Service Hotline

136 3267 5935

Contact Email

shaobo@sfi-crf.com

Address:1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

图片名称

Add WeChat
Get related information

Links

Apply to exchange friend links

Copyright © Shenzhen Chengfeng Smart Co.

京ICP备10002622号-38

粤公网安备 44030602005200号

图片名称

Cheng Feng Zhi Zuang a focus on plasma research and development for 20 years

We

The services of

Inquire for free sample testing

1-to-1 program customization

24-hour online after-sales service

Source manufacturer

Get the program
%{tishi_zhanwei}%
图片名称

Scan the code for information

诚峰智造