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The action of each gas in plasma cleaning machine

The action of each gas in plasma cleaning machine

Plasma cleaning machine equipment commonly used gases are compressed air, oxygen, argon, hydrogen, argon hydrogen mixed gas CF4, etc. Before cleaning objects with plasma cleaning equipment, it is necessary to analyze the cleaning objects and contaminants, and then select the appropriate gas. According to the basic principle of the equipment, the selective gas can be divided into hydrogen, oxygen and other special gases. Hydrogen is mainly used for cleaning compounds on the metal surface. The oxygen in the plasma cleaning device is used to clean the organic matter on the surface of the object, resulting in oxidation removal. Non-reactive gas in plasma cleaning machine equipment, such as argon, helium, nitrogen and so on. The hardness and wear resistance can be improved after nitrogen treatment. Argon and helium have stable properties, and the working voltage of molecular charge and discharge is low, so it is easy to generate metastable molecules. On the one hand, the high-energy particle physics effect is used to clean up objects that are easy to oxidize or reduce.   The AR gas bombarded the pollutants with volatile chemicals, which were expelled through the vacuum pump, preventing the surface chemicals from reacting. Argon is very easy to form metastable molecules, and when it collides with oxygen atoms, it will produce positive charge transformation and recombination. The application of pure hydrogen in plasma plasma equipment is very effective, but considering the reliability and safety of charge and discharge, argon hydrogen compounds can also be used in plasma cleaning machines. In addition, reverse oxygen and argon oxygen cleaning sequence can also be used, this cleaning method has the characteristics of easy oxidation and easy reduction.   1. Argon: The principle of argon cleaning is physical bombardment of the surface. Argon is physically efficient because it has a large atomic size and can penetrate the surface layer of a product with a great deal of energy. The positive argon ions are attracted to the negative plate, the impact force makes all the surface stains disappear, and then the gas pollutants will be discharged with the pump.   2. Oxygen: organic chemical reaction occurs with chemicals on the surface of the product. For example, oxygen can reasonably remove organic chemical pollutants and react with the pollutants to produce carbon dioxide, carbon monoxide, and water. In general, chemical reactions facilitate removal of organic contaminants.   3. Hydrogen: Hydrogen can be used to remove oxides from metal surfaces. Often mixed with argon to improve the ability to remove dirt. People generally pay attention to the flammability of hydrogen and the use of hydrogen storage, we can use hydrogen generator to produce hydrogen from water, to eliminate the potential safety hazards.   4.CF4 / SF6: Fluorinated gas is generally used in semiconductor materials and PWB (printed circuit board) and other industrial production. Fluorinated gas used in PADS process can convert oxides into chlorides, so as to achieve flow free welding.

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Cleaning equipment of plasma surface treatment machine

Cleaning equipment of plasma surface treatment machine

With the development of electronic information technology industry, especially communication, electronic computers and electronic devices, semiconductor materials, LCD display and optoelectronic products and other industrial cleaning equipment accounted for a larger proportion, plasma surface treatment equipment has become the standard of many industrial cleaning equipment. Manufacturing technical requirements, continuously improve to make cleaning equipment technology at home will have a broader space for development, the rapid development of automobile industry, make many foreign manufacturers to target on the market in our country, many parts makers are also constantly introducing processor plasma surface cleaning technology, which puts forward a new cleaning technology for technology standard, can say plasma treatment machine cleaning technology is more suitable for the development of automobile industry. Medical machinery application pretreatment method, the treatment process is more complex, Freon cleaning is not only a waste of resources, but also expensive, the use of plasma surface treatment equipment can prevent chemical substances from causing harm to the human body, more suitable for the requirements of modern medical technology. Electro-optical components and some electronic optical products have high requirements for cleaning technology, so the technology of plasma surface treatment machine can be widely used in the electro-optical industry. In general industrial production, the surface treatment cleaning technology can not only play a cleaning role, but also can etch, play a role in ash, can stimulate the surface activity. Therefore, it has broad development prospects and will become more and more important production and processing technology for scientific research institutes, medical institutions, manufacturing enterprises and so on. Plasma surface processor cleaning equipment to the surface treatment of materials, the result is careful cleaning and efficient activation. The purpose of cleaning is to remove the surface electrostatic induction, dust and oil residue and other pollutants, through this fine treatment, can make the material surface layer is fully removed, can remove the tiny particles on the surface, even in the surface pore structure can also be.

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Influence of plasma etching on Em

Influence of plasma etching on Em

Stress transfer (SM) and low-K TDDB. When the device is working, there is current passing through the metal interconnect. Due to the momentum exchange between electrons and metal lattice, metal ions will drift under the influence of electron wind, which results in holes or hillocks in some parts of the wire. When the cavity growth leads to the increase of conductor resistance to a certain critical value or the formation of circuit break, then the electromigration failure occurs. In bulk metals, the current density is low (<104 A/cm2), and the electromigration occurs only at high temperatures near the melting point of the material. Thin film material is not, such as aluminum alloy wire deposition, due to the small cross-sectional area and has good heat dissipation conditions, the current density can be as high as 107 A/cm2, so at A lower temperature will occur electric migration. The force of the electronic wind acting on the metal ion is FEM eJ = rho Z * (7-15) Where, ρ is the metal resistivity; Z* is the effective charge of metal. Table 7.3 lists Z* values of some metal materials. A negative Z* value indicates that metal ions move towards the positive electrode. A positive Z* value indicates that metal ions move towards the negative electrode. The smaller the value of Z*, the stronger the resistance to electromigration. In the table, the Z* values of Al and Cu are negative, and both Al and Cu ions move to the positive electrode, while the Z* value of Cu is only 1/6 of that of Al, indicating that the anti-electromigration ability of Cu is far greater than that of Al. Electromigration is a mass conservation transport process. When metal ions gather, local mechanical stress on the metal and the surrounding dielectric layer will increase. This local stress increase will lead to metal ions backflow (Blech effect). For shorter wires, the Blech effect can be strong enough to counteract the drifting ions so that telephone migration is suppressed. Electromigration is mainly caused by momentum transfer and diffusion effect, and momentum transfer is proportional to the current density circulating in the metal, and diffusion effect is proportional to the temperature in the metal. At present, Black model is commonly used to describe electromigration failure, and the failure time model is TF=A0(J-Jcrit)-nexp(Ea/kBT)            (7-16) Where, A0 is the coefficient related to process and material, and the difference of A0 makes the failure time a distribution. EM generally adopts lognormal failure time distribution. J is the current density; Jcrit is the critical current density, and only when J is greater than Jcrit will electromigration occur. N is the current density index; Ea is activation energy; T is temperature; B sub B is the Boltzmann constant. The migration path of EM depends on the metal wire structure and actual process. For general logical products, aluminum alloy interconnect is used above 0.13μm, copper interconnect is used below 0.13μm. The structure and manufacturing process of the two kinds of wires are different, and the mechanism is also different. Aluminum wire in aluminum alloy interconnection structure is formed by deposition and etching. It is a two-dimensional structure with large grain size. When the wire width is less than the average size of the grain, the wire is a bamboo-like structure. The copper wire and through hole in the copper interconnection structure are formed by Dual Damascene (DD) process and CMP. They are three-dimensional structure with small grain size. Moreover, due to the introduction of the copper diffusion shield layer, there will be a metal barrier layer TAN separated at the junction between the bottom of the through hole and the lower metal. Generally speaking, the surface of aluminum interconnect is covered with a layer of oxide film Al2O3, which has a strong bonding energy with the aluminum body, so the electromigration in aluminum mainly takes place along the grain boundary. When the line width becomes smaller and presents a bambus-like structure, the lattice migration becomes the main mechanism. However, the bond between the oxide CuO on the surface of Cu and the Cu body is relatively poor, and this interface provides a high fluidity channel for the migration of copper ions. In the current typical copper interconnection process, there is a dielectric barrier layer Sicon on the upper surface of copper to block Cu diffusion and act as an etching stop layer. Therefore, electrical migration in copper structure is mainly carried out along the interface between Cu and the dielectric barrier layer Sicon. The use of plasma to clean up the autooxidation layer of copper and silicify the copper surface prior to the deposition of the dielectric barrier layer can effectively improve the EM. Coating the copper surface with an alloy that can fix the copper ions and inhibit their diffusion is another way to greatly improve the EM, such as depos

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The function of plasma cleaning machine

The function of plasma cleaning machine

Plasma cleaning machine is a new high-tech technology, the use of plasma can achieve the traditional cleaner can not achieve the effect, such as used for material surface cleaning activation modification etching to improve hydrophilic bonding adhesion. Plasma is a form of matter, also called the fourth form of matter. Enough energy is acting on the gas to ionize it and leave it in a plasma state. The "active" components in plasma include ions, electrons, active groups, metastable stimulated nuclides, photons and so on. Plasma equipment is to use the characteristics of these active components to sample surface treatment, so as to achieve the purpose of cleaning. Plasma cleaning machine in the generation of plasma device, is the two electrodes in a sealed container to generate electric field, with a vacuum pump to achieve a certain vacuum degree. As the gas gets thinner, the distance between the molecules and the distance that the molecules or ions are free to travel increases. They collide under the action of positive and negative pole fields to form plasma. These ions have enough activity and energy to break almost any chemical bond, leading to any chemical reaction on the exposed surface. The plasma of various gases has different chemical properties. For example, oxygen plasma has high oxidation performance, can oxidize photoresist into gas, so as to achieve the purpose of cleaning. Corrosion gas plasma has good anisotropy and can meet the needs of corrosion. Glow is generated during plasma processing, so it is called glow discharge processing. The function of the plasma cleaning machine mainly depends on the "activation" of the active particles in the plasma to remove the surface stains of objects. In terms of mechanism, plasma cleaning generally includes the following processes: inorganic gas is excited to the plasma state; Solid surface adsorption of gas phase material; Adsorptive groups react with solid surface molecules to form product molecules; Analyze the product molecules to form the gas phase; The reaction residue is separated from the surface. Plasma cleaners are characterized by their ability to handle metals, semiconductors, oxides and most polymer materials, such as polypropylene, polyester, polyimide, PVC, epoxy resins, and even PTFE, regardless of the type of substrate being treated. It can also clean integral, partial and complex structures. The plasma cleaner can be done independently of the processing object. The product can handle a variety of materials, whether metal, semiconductor, oxide or polymer (such as polypropylene, polyvinyl chloride, polytetrafluoroethylene, polyimide, polyester, epoxy resin, etc.), can be treated by plasma. Therefore, it is especially suitable for materials that are not resistant to high temperature and solvent. It is also optional to carry out partial cleaning on whole, partial or complex structure of the material. After cleaning and decontamination is completed, the surface properties of the material itself will be improved. Such as improving the wettability of the surface, improve the adhesion of the film, in many applications are very important.

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Precautions for the use of low temperature plasma cleaning machine manufacturers

Precautions for the use of low temperature plasma cleaning machine manufacturers

In we will work on the surface layer of various raw materials to clean up, activated plasma injection, and the actual operation such as polymerization, application of low temperature plasma cleaning machine, and as a laboratory common high precision machinery and equipment, if the wrong operation, is likely to result in equipment damage or poor operating results, so today's cheng feng smart low-temperature plasma cleaning machine manufacturer to detailed introduces the common problems of low temperature plasma cleaning machine. 1, low temperature plasma cleaning machine in the operation of the switch power regulation is: communication frequency for 50/60 hz, 380 v / 220 v is also 3/12.5 kw, the actual use which provide according to the request, should be checked before starting the good access and inspection work of switch power supply, machinery and equipment operation should come out after a smooth running, and generally have a green display to show the long light system normal operation, if there is fault indicator light yellow, should stop to carry out the maintenance operation. 2, in the application of smart peak plasma cleaning machine, to bright red warning lamp, should pay attention to the machine equipment operation or vibrate, often long bright red warning lamp light, then you should hold the reset switch immediately observation equipment, if the machine is still abnormal, should immediately terminate machine equipment operation, then to carry out the common fault inspection, prevent equipment damage. 3, the application of low temperature plasma cleaning machine to clean up in time, and clean up be sure to first break switch power supply, then can open the inner chamber and the electrical control cabinet, and should pay attention to according to the standard stipulated in the instructions for cleaning, in addition, now a lot of low temperature plasma cleaning machine lumen are all hanging outside the annular electric level, and therefore not prone to the lining of the environmental pollution. Most described above several aspects is to pay attention to all kinds of low temperature plasma cleaning machine application problem, increasing along with the type of machinery and equipment, the actual operation personnel application read and master the operating instructions carefully before, a lot of low temperature plasma cleaning machine must also be practical operation staff after the hillock training. And with many low-temperature plasma machines and equipment just beginning to have the self-washing effect, the daily maintenance of the machines and equipment is becoming easier and easier.

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The function of plasma surface processor

The function of plasma surface processor

Plasma Surface Processer RF low temperature plasma, a wide range of processing, can be designed into a variety of shapes, especially suitable for the material of the object surface modification. After low temperature plasma surface treatment, many physical and chemical changes will occur on the surface of the material, or etching phenomenon (hardly visible to the naked eye) or the introduction of oxygen-containing polar groups, respectively to improve the hydrophilicity, bonding, affinity. Plasma surface processor technology is widely used in the field of surface modification because of its advantages such as simple process, convenient operation, fast processing speed, good treatment effect, less environmental pollution and energy saving. For surface treatment of materials, the functions of plasma are basically as follows: 1, activity: significantly improve the wetting, the formation of active surface; 2, cleaning: remove dirt and oil, fine cleaning and static electricity; 3, coating: through the surface coating treatment, to provide functional surface, improve the surface adhesion ability, improve the reliability and durability of surface adhesion. 4, after the plasma surface treatment machine, whether it is a variety of polymer plastics, ceramics, glass, PVC, paper or metal materials, can get better surface energy. Adopts this kind of processing technology, can improve the product surface tension performance, more in line with the industry aspect to coat, the adhesive and so on the processing request.

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