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Wide width linear plasma cleaning machine plasma treatment of flax fabric dyeing

Wide width linear plasma cleaning machine plasma treatment of flax fabric dyeing

Flax, ramie and other hemp fabrics with good permeability, cool, comfortable and other properties, by the majority of consumers like. However, because of the high degree of crystallinity and orientation of hemp fabric, the dye is not easy to infiltrate and diffuse, and the poor dyeing performance is not easy to dye into dark color, which limits the application of flax in high-grade fabrics to a certain extent. In the past, the dyeing properties of flax fabrics were improved mainly through cationic chemical modification, chemical grafting, rare earth method, coating method, adding darkening agent, etc. These methods have certain effects on the dyeing properties of flax fabrics. However, there are some disadvantages such as high cost, high water consumption, high energy consumption, environmental pollution and destruction of fiber performance. Wide width linear plasma cleaning machine Plasma surface treatment: The surface etching, weight loss and roughness of the fabric can be increased by oxygen plasma treatment with wide-width linear plasma cleaning machine. The surface of the fabric has microholes and cracks. The surface area of the fabric is increased. When oxygen plasma is used to treat flax fabric, oxygen atoms are infiltrated into the fiber surface, generating free radicals and causing oxygen radical reaction in the air. Such hydrophilic groups as hydroxyl group, carbonyl group and peroxy group are introduced to improve the hydrophilicity of fabric. The higher the treatment power, the more high-speed particles, the greater the energy, the more serious the bombardment etching effect on the fiber surface, the lower the crystallinity of the fiber surface, so as to improve the wettability of the fabric, which is conducive to the improvement of the dyeing concentration of the fabric.   Improving the etch roughness and wettability of fiber surface can improve the colouring rate and colouring depth of fiber. The increase of the dyeing rate is directly related to the wettability of the fabric. The better the wettability is, the more conducive it is to the penetration and diffusion of the dye into the fiber, thus increasing the dyeing percentage. The bombardment and etching of high energy particles on the surface of ramie fiber increases, which leads to the repeated reflection and absorption of the fiber surface, increases the total absorption of the fiber to the incident light, and produces the apparent dark effect. Wide width linear plasma cleaning machine plasma treatment is beneficial to improve the direct dye dyeing of flax fabric wash and wear resistance, can replace the color fixing agent Y for color treatment, reduce the consumption of chemical agents.   For the resin or linen fabric softener finishing, after wide linear plasma cleaning machine, plasma treatment, the fiber surface was etched, can make the fiber and finishing agent, further in the fiber surface to form a layer of a solid coarse layer, greatly reduces the light reflectivity of fiber surface, enhances the deep dyeing of fabrics.

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Introduction of new phase change memory and the application of plasma cleaning machine etching

Introduction of new phase change memory and the application of plasma cleaning machine etching

Introduction of new phase change memory and the application of plasma cleaning machine etching: The development of phase change memory (PCM) has been relatively mature. Its principle is the obvious resistance difference between crystalline phase (low resistance) and amorphous phase (high resistance) of some PCM materials. The SET and RESET operations correspond to the low resistance and high resistance states of PCMS respectively, which means that the switch between "0" and "1" of PCMS does not require the erasure of flash memory. These two states can use the Joule thermal effect of an electric current to heat the PCM, thus rapidly switching and cycling. The initial state of PCMS is mostly crystalline phase (low resistance) due to the high temperature of the process in the back phase of logic. Conversion to an amorphous phase requires a very large current pulse passing through the Bottom Electrode Contact (BEC) in a very short time to melt part of the phase-change material and anneal. This part is converted into an amorphous phase by melting annealing, known as a Programmable region. The impedance between the top electrode and the bottom electrode is effectively increased by the phase-change materials in series with the crystalline phase region. The conversion to crystalline phase requires a medium current pulse to pass through the lower electrode contact heating program-controlled zone at a temperature between the critical temperature of crystallization and the critical temperature of melting for a long time. The state of the programmed region can be read by measuring the impedance of the storage unit. This reading requires that the current flowing through the storage unit be small enough to avoid affecting the current state of the device. The properties of PHASE change materials directly determine the performance of phase change memory. Currently, sulfur compounds (Chalcogenide), such as Ge2Sb2Te5(GST), have been widely studied. The crystallization time may be less than 100ns. The important applications of plasma cleaning machine etching in the graphics of phase change memory storage unit include: plasma cleaning machine etching of lower electrode contact hole and phase change material (GST) plasma cleaning machine etching.

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GST etching process of phase change memory of plasma Cleaning Machine

GST etching process of phase change memory of plasma Cleaning Machine

GST is a widely used phase change material, and its plasma cleaning machine etching process is unique to phase change memory. 1. Plasma cleaning machine GST etching gas screening As the core material of PHASE-change memory, THE volume of GST directly affects the electrical performance of the device, so the integrity of GST films is very important. The influence of Cl, F and Br3 different halogen gases on GST etching profile of plasma cleaning machine was studied. The main etching agent containing bromine gas showed less damage to GST morphology than oxygen gas or fluorine gas. The Ar and He as dilution gas had less influence on the GST diagrammatic form, but in the graph with 4 wires as a set, the load of the edge and center graph was smaller when using He. When Ar is used, the load is relatively significant, and this difference may originate from the significant quality difference between Ar and He. 2. Hard mask (Titanium nitride) profile shape control Titanium nitride is generally used as a hard mask for GST etching, and its profile shape directly affects the contour of the underlying GST. Chlorine gas (Cl) in the plasma cleaning machine is mostly used for titanium nitride etching. In the influence of adding BCl3 and He to chlorine gas on the profile shape of titanium nitride, it can be seen that although adding He can bring a higher optoresistance selection ratio, the etching surface of its titanium nitride is obviously more tilted than adding BCl3. 3. Post-etching treatment In general, after dry etching such as plasma cleaning machine is completed, a step of acid or alkaline wet cleaning is introduced to completely remove the by-products formed by plasma etching on the wafer to avoid secondary reactions. GST is a kind of metal alloy, any acid or alkali will cause serious corrosion, so GST plasma etching can only use low concentration of acid (or alkali) wet cleaning agent, GST etching produced by the metal elements of the by-products cleaning effect is poor. As a result, a plasma cleaning machine after etching processing (Post Etch Treatment) technology was introduced, after complete the GST and remove photoresist etching, join step shorter for fluoride gas etching agent (CF4, SF6 and NF3) etching formula, using fluoride gas can activate the GST etching by-products characteristics, can obviously improve the effect of the wet cleaning.

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Application of etching in plasma cleaning machine and introduction of new magnetic memory

Application of etching in plasma cleaning machine and introduction of new magnetic memory

Magnetic Random Access Memory (MRAM) is a type of Memory with Magnetic Tunnel Junction (MTJ) as its core component. The magnetic tunnel junction is a sandwich structure of ferromagnetic Layer/tunnel barrier Layer (metal oxide, such as MgO)/ ferromagnetic Layer. One Layer of ferromagnetic material is called the Reference Layer, whose magnetization direction is fixed, while the other Layer is called Free Layer, whose magnetization direction can be changed by the external magnetic field or Polarized Current. When the magnetization directions in the fixed layer and the free layer are the same, the MRT junction presents low electrical positive. When the magnetization directions are different, the MRT junction presents high electrical resistance. This phenomenon is called the tunneling magnetoresistance effect.   Conventional magnetic memory, which uses an external current to generate a circular magnetic field to change the direction of free-layer magnetization, has been replaced by Spin Transfer Torque (STT) magnetic memory, which has large storage units and no read-write speed advantages over other memory. The so-called spin transfer moment refers to the change in the magnetic moment of atoms in the ferromagnetic layer when the spin polarization current passes through the nano-sized ferromagnetic layer. This means that the magnetic tunnel junction can be driven directly by the current. After the electron spin polarization, a torque is generated on the ferromagnetic atom to change the magnetization direction in the ferromagnetic layer to realize the change of resistance. Therefore, the area and performance of the memory can be improved. The 1T1M (One One MTJ) magnetic memory consists of a magnetic memory in which a magnetic tunnel junction is visualized using a few bytes or bytes in the middle of the Transistor.   Spin transfer torque of magnetic memory are made in standard CMOS logic circuit after a period of metal connection layer embedded storage unit (magnetic tunnel junction), integrated with the spin transfer torque of the magnetic tunnel junction logic after a period of electric and magnetic tunnel junction of general process, obviously, the magnetic tunnel junction etching on device performance is very important. Ion Beam Etching (IBE), inductively coupled plasma Etching (ICP), REACTIVE Ion Etching (RIE) and other systems are the main Etching technologies used at present. It is worth noting that the shape of magnetic tunnel junction not only affects device performance, but also significantly affects the etching process of plasma cleaning machine. For example, the etching of cylinder or ring pattern is relatively simple.   At present, it has been reported that the materials used in magnetic tunneling junction contain Fe, Co, Ni, Pt, Ir, Mn, Mg and other metal elements and are generally made of 5-10 layers of single-layer materials (alloy or metal oxide) at the order of 1nm. Therefore, the challenges of plasma etching in the plasma cleaning machine of magnetic memory include: 1. Traditional reactive plasma (RIE) is confronted with the non-volatile problem of metal etching by-products; 2. The super-thin stacked structure of single layer materials has a high requirement for etching selection ratio and directivity; 3. The halogen gas commonly used in metal etching can corrode ultra-thin metal material layers easily. In particular, the barrier is mainly metal oxide and its thickness in the vertical magnetic tunnel junction is less than 3nm, which is prone to corrosion and therefore affects the electrical isolation of the fixed layer and the free layer (Electrically Isolated). 4. Process temperature limit, for example, the magnetism of most metal materials will decrease after exceeding 200°C. This temperature limitation is not only manifested in the shrinkage of the temperature window of the corresponding material etching formula, but also in the low temperature forming of the hard mask material etching resistance is generally lower.   Therefore, IBE as the representative of ion milling technology without corrosive side effect always occupies a place in the etching of magnetic tunnel junction plasma cleaning machine. The problem it faces is that the metal material stripped in the etching process may be redeposited in the side wall, and the subsequent cleaning process is difficult to remove, which will greatly affect the performance of the device. If it is deposited on the side wall of the barrier layer, it will directly cause short circuit. In addition, the shadow effect of secondary sediments will cause the etching shape to become more and more oblique with time. The overall tilt and rotation of the wafer can ameliorate this problem, but it also severely restricts its productivity. The uniformity and orientation of the ion beam at the 300mm wafer level also remain to be resolved. Compared with the plasma

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Changes of low-temperature plasma etching technology in plasma cleaning Machine in the era of 3D logic and memory

Changes of low-temperature plasma etching technology in plasma cleaning Machine in the era of 3D logic and memory

Since NAND was produced in 2014 and officially entered the 3D era (3 NAND), logic products also entered the mass production of 3D structure fin-type transistors in 2015. With the semiconductor industry stepping into the era of THREE-DIMENSIONAL structure, the traditional etching technology of plasma cleaning machine cannot meet the requirements of small-size complex process. Plasma cleaning machine etch machine manufacturer Eight Xianhai launched a variety of applicable THREE-DIMENSIONAL structure etching technology. For plasmas, the electron energy distribution (EED and Ion energy distribution (IED) can generally be characterized by two main lines. While EED typically controls electron temperature, plasma degree, and electron impact reaction, IED is controlling ion bombardment of the surface energy of the wafer that is key to optimizing etching patterns and reducing damage to the wafer. The commercial etching machines that have been introduced are mainly along the main line of EED to improve the fighting capacity of the etching machines. TEL's RLSA, for example, uses surface waves to excite plasma, which then spreads to the surface of a wafer. This machine is currently under development in the electronic temperature is very low, probably as low as 1.0eV. And on the company's Mesa even Hitachi 8190 xt company is by synchronizing pulses to achieve low electronic refund, synchronous pulse refers to the source of power and bottom electrode bias power synchronous switch, when in the closed position, a substantial reduction in plasma cleaning machine electrons in the plasma, the plasma from the original electron - ion into the ion - ion, at the same time because the disappearance of the electrode surface at the bottom of the sheath, and to better control the positive and negative from the plasma are provided. RLSA is realized with ion-ion plasma by diffusion in space, while Mesa/8190XT is realized with time (plasma switch). In principle, the RLSA electron temperature is lower, while Mesa/8190XT increases two means of regulating the plasma, namely the switching ratio and frequency of the synchronous pulse. Mesa is two rf power synchronous pulses, and 8190XT could theoretically be a microwave/RF synchronous pulse. Generally, the plasma etched by the plasma cleaner is electronegative, so in the ion-ion plasma state, the negative ion can be freed from the bondage and the positive charge on the wafer surface, so as to reduce the charge accumulation effect. Low electron temperatures reduce the dissociation rate, which reduces the energy that bombards the surface of the wafer, and reduces polymer production and vacuum uv release. Low electron temperature can narrow the width of ion energy peak, made it possible to precise control energy strike, thus improve choose ビ. In addition, in the plasma cleaning machine plasma closing time fresh air club can change the uniformity of the plasma, in addition, synchronous rushed technique can pitch by clearance rate and active group of flux and the flux, this ratio will influence the etching selectivity, the degree of influence is the etching and the specific gas has a strong correlation. Pulse etching of plasma cleaning machine began as reported by Boswell Professor in the Plasma Laboratory of Australian National University in 1985. Over the past 30 years, there have been about 50,000 articles on pulse etching, accounting for 15% of plasma etching. In addition to synchronous pulse technology, there are source power pulse, bias power pulse, Embedded pulse, and Delayed pulse, all of which are microtuned on EED or used in special processes. For example, the source power pulse generally has no bias, so it is suitable for the fine treatment (removal) of surface materials. In the case of bias power pulse, because the source power works continuously, the electronic temperature will not decrease with the pulse. If the reduction is needed, it is usually achieved by increasing the pressure in the reaction chamber, but the anisotropic etching ability will be weakened. However, this problem can be solved by combining with high power bottom bias. The current high bias pulse technology (US9059116) is available in the High-end Kiyo series of The Semiconductor Industry. Compared to the synchronous pulse, the particle energy Angle distribution (IEAD) in the plasma cleaning machine is similar to the synchronous pulse during plasma shutdown, thus reducing the charge accumulation effect. Embedded pulse is generally pulsed simultaneously with the source power and the bias power, but the bias power opening time is shorter than the source power opening time, which can reduce the high electron temperature peak of the synchronous pulse plasma at the opening moment. There are several kinds of stage-step pulse techniques, which are roughly when the source power is closed, the bias power de

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Operation method of reactive ion etcher made by plasma cleaning machine manufacturer

Operation method of reactive ion etcher made by plasma cleaning machine manufacturer

According to the RF (frequency-emitted) magnetic field applied to the chip disk, the plasma technology is started in the manufacturer system of the plasma cleaning machine. The field is generally set at a frequency of 13.56 MHZ and is released in the hundreds of Thales. The oscillating electrostatic field can weaken the molecular structure of electrolyte vapors according to the separation from electronic devices, which then leads to the plasma technology of reactive ion etcher.   In each of the circulatory systems present, the electronics accelerate from left to right in the chamber, sometimes colliding with the upper wall and chip disk of the chamber. In addition, in response to RF electrostatic field of reactive ion etcher, the relativity of ionization motion with higher quality is less. As the electronics are digested and absorbed into the chamber walls, they are simply sent to the road and remain in place throughout the system. Little do they know that the electronics stacked on the chip platters are positively charged because of their DC protection. The accumulation of such positive charges on the disc creates a large negative operating voltage, typically several hundred volts. Because of the relatively high concentration of positive ions compared with free electrons, plasma cleaning machine manufacturers plasma technology itself slightly positive.   Because of the large working voltage difference, the positive ions tend to drift toward the chip disk, where they collide with the test pieces of the etching process. Ionization produces chemical changes with the raw materials on the surface of the sample, but some of the raw materials can also be knocked out according to the transfer of some mechanical energy. Because the REion-etcher reflects most of the vertical transfer of ionization, it reflects that ionization etching can produce a very wide variety of etching process galleries, in contrast to the typical anisotropic gallery of wet organic chemical etching process.   The etching process standard in RIE system of plasma cleaning machine manufacturer is quite large due to many main processing parameters, such as working pressure, gas pressure and RF output power. The improved version number of RIE is a deep reflection of the ionizing etching process used to exploit shallow features.

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