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Application of plasma surface treatment technology

Application of plasma surface treatment technology

In many different fields, using the physical and chemical properties of plasma to form a dense layer or functional groups containing oxygen on the surface of materials, so as to change the surface characteristics of materials and improve their surface hydrophilicity and adhesion, has been widely used. Plasma surface treatment has obvious advantages. At present, there are more and more requirements for product treatment in the market, and more and more customized plasma surface treatment machines. The following are some characteristics and applications of plasma surface treatment.   Plasma surface treatment is an effective surface cleaning, activation, and coating treatment for a variety of materials, including plastics, metals, or glass. Plasma cleaning machine can clean the surface of the mold release agent, residues, and its activation process, can ensure the quality of subsequent bonding and coating processes, for coating treatment, can further improve the surface characteristics of the complex. By using plasma technology, the surface pretreatment of materials can be carried out efficiently according to different technological requirements.   With conventional water-based cold glue can make coated or glazed cardboard in the pasting box machine to get reliable bonding, no need to carry out local laminating, local glazing, surface grinding tangent and other processes, and no need to change different special glue for different cardboard. The use of plasma surface treatment not only improves its applicability to glue, but also eliminates the dependence on special glue to achieve high quality adhesion. At the same time, it can improve the surface spreading performance and prevent the formation of bubbles. Importantly, through plasma treatment, carton manufacturers can obtain products with lower cost, higher efficiency and more guaranteed quality.   Plasma processor technology is applied to pretreatment of plastic, aluminum, EPDM strip and other materials. The application of plasma technology in automobile industry is becoming more and more mature. In the extrusion line, plasma pretreatment can be used to pretreat plastic or elastomer materials to make them better able to complete subsequent processes, such as coating or flocking. The role of plasma treatment is to clean and activate the material, and since the plasma beam can be focused specifically on the surface area to be treated, it can effectively handle complex profile structures.   The advantages and characteristics of the plasma treatment system are as follows: even if the structure is complex, also can carry out targeted pretreatment, etc.   Plasma surface treatment technology can clean aluminum surface conveniently and environmentally. Composite films are often used in beverage or food packaging because of their good barrier properties. Aluminum foil is used in the processing of composite film as a composite barrier layer, it is necessary to add a layer of PE film on the aluminum foil to ensure that the aluminum foil will not be in direct contact with the food in the package. For thin film composite equipment, aluminum foil is treated by plasma, so it can be closely combined with PE film, the energy in the plasma, can remove a variety of pollutants from the surface of aluminum foil, such as dust, oil, etc. And the plasma processing process can fully realize the online processing mode. In practice, some users use annealing process to achieve the above effect, but compared with plasma, this kind of time and energy consuming.   The advantages and characteristics of plasma surface treatment are as follows: 1. Complete online integration capability (without interfering the original process operation), energy saving, low cost and environmental protection. 2. Do not change the mechanical properties of aluminum foil 3. Selective, partial or comprehensive cleaning can be realized. 4, aluminum foil can be double-sided processing. 5. The treatment process can be integrated in front of the winding device.

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Plasma processor Sigma Silicon germanium trench molding control

Plasma processor Sigma Silicon germanium trench molding control

In type Р drain source area form sigma type silicon groove, need to through chemical vapor deposition, grow in the polysilicon gate oxide silicon film layer and the silicon nitride film layer. The silicon nitride film is used to form the side wall and control the distance from the ge silicon groove to the gate. The silicon oxide layer at the bottom is used as a silicon nitride plasma processor to etch a stop layer and a stress buffer layer. Then, the NMOS region is covered by photoresist and the PMOS region is exposed by photolithography. Then side walls need to be formed in the PMOS area. The main etching of the plasma processor on the side wall generally uses CF4 gas, which etches out most of the silicon nitride, so as not to contact the silicon of the lower substrate. CH3 F/O2 gas was used for over-etching to obtain a high selection ratio of silicon nitride to silicon oxide, and a certain amount of over-etching was used to remove the remaining silicon nitride.   Silicon trench molding adopts plasma processor dry etching and wet etching combined process. The HBr/O2 gas process is adopted for bulk silicon etching in the inductively coupled silicon etching machine. It has a high selection ratio for the side wall and gate hard mask layer, which can effectively prevent the exposure of polysilicon gate and avoid the excess germanium silicon defects growing in the gate during the subsequent epitaxial process. This excess germanium silicon defect causes short-circuit failure of the gate and through hole. Ammonium tetramethyl hydroxide is used in wet etching. It is a colorless or yellowish liquid with amine-like odor and is easily soluble in water. Its solution is a strong alkaline solution, which is often used as a developing solution in semiconductor exposure process and also as an etching solution of silicon.  

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Etching of plasma surface cleaning machine side wall

Etching of plasma surface cleaning machine side wall

Generally, tetrafluoride (CF4) is used as the Main Etch step for the etching of the side wall of the plasma surface cleaning machine. The main etching step etches off the primary oxide layer on the surface of the Si3N4 film and the si3N4 film of most thickness. By adjusting the pressure and power of the etching chamber, the anisotropic etching of the main etching step can be controlled to form the side wall. However, there is no selective ratio between silicon nitride and silicon oxide at the bottom in the main etching step. If not controlled, it will cause damage to the body silicon substrate at the bottom. Therefore, the endpoint monitoring of the main etching step on the side wall of the plasma surface cleaning machine will immediately stop the etching and switch to the etching step.   The silicon nitride film remaining in the main etching step was etched by the over-etching step, and stopped on the silicon oxide film at the same time, so as to prevent damage to the underlying silicon substrate. CH3F or CH2F2 and O2 gas are usually used in the over-etching process. CH3F gas into CHx in plasma and f. + h. bombarding ions can interrupt Si - O keys, then provided to CFx groups react with Si can be volatile by-products formation, but in the surface of the plasma cleaning machine CH3F F ion in plasma concentration is low, CHx easily and - О - Si - reaction, formation - Si - O - CHx.   The polymer is thinner on silicon nitride because the Si-N bond has a much lower bond energy than the Si-O bond, so the Si-N bond is easily broken. As it is an exothermic reaction, CHx can easily bond with -Si-N to produce ·CN+·H. Therefore, the etching reaction of plasma surface cleaning machine is very active on silicon nitride. On the contrary, a thick polymer is formed on the silicon oxide film layer, which prevents the further reaction. In general, a selection ratio higher than 10 can be obtained through process optimization. Table 3.8 lists the etching rate, selection ratio and uniformity of the dielectric layer and silicon under different carbon-fluorine ratio conditions. The width and height of the side wall are mainly determined by the thickness of the deposited film and the degree of etching on the plasma surface cleaning machine.

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Influence of etching on the side wall of plasma cleaning equipment on devices

Influence of etching on the side wall of plasma cleaning equipment on devices

The width of offset side wall of plasma cleaning equipment has an important effect on device performance. The direct effect is that the source leakage resistor (RSD) under the sidewall is closely related to the width of the sidewall. When the channel resistance decreases greatly due to the reduction of the gate length, the parasitic resistance of the source leakage zone becomes an important part of the overall resistance of the device. Too narrow offset side wall will result in high overlapped capacitance and worsen short channel effect. Too wide offset side wall, will make the overlap capacitance is small, will cause the drive current drop. At the same time, the time delay decreases with the increase of the offset side wall width, but deteriorates after reaching a certain scale. Therefore, the width of the offset side wall should be carefully optimized to ensure the optimal device performance.   In the previous technology process of 90nm, the Capacity Coupled Plasma (CCP) medium etching machine was mainly used to etching the offset side wall. This kind of equipment belongs to the low density plasma equipment working under high pressure, and the etching uniformity and process stability are relatively poor. At the same time, due to the directivity of ion divergence, the consistency of sidewall Angle is difficult to control. Thus, the Inductively Coupled Plasma (ICP) high-density Plasma devices previously used for silicon etching are increasingly being used for silicon nitride side wall etching. Because the inductively coupled plasma device can work in the low pressure range, ion directivity is good, less scattering. At the same time, the gas retention time in the cavity is short and the etching uniformity is good. In addition, the cavity predeposition function is used in the etching process, that is, a thin film is deposited on the cavity before each chip is etched, and the thin film on the wall of the cavity is removed after etching. This ensures the consistency of the cavity environment and greatly improves the stability of etching process. Inductively coupled plasma cleaning equipment has better control over the shape of offset side wall.   The evenness of offset wall width of inductively coupled devices is much better than that of capacitive coupled devices. It is found that the difference of the width of the side wall of the inductively coupled etching equipment is much smaller than that of the capacitance-coupled etching equipment by evaluating the side wall with the difference of the width of the middle wall and the width of the bottom wall in the tem photographs. It can be seen that the etch uniformity and the control ability to the side wall shape of inductively coupled plasma cleaning equipment are far better than that of capacitive coupling equipment. It is because of good offset wall width uniformity and lateral wall shape control; This results in good transistor uniformity. This point can be clearly verified by the yield loss from the ring oscillator. The yield loss of the ring oscillator is greatly reduced by inductively coupled etching in plasma cleaning equipment, and the yield is greatly increased.   In the process of plasma cleaning equipment side wall etching, in addition to uniformity, Top Loss is also an important parameter of side wall etching. Less top height loss will affect the metallization thickness of polysilicon gate and increase the resistance value of metal gate. More top height loss will affect the protection of polysilicon pseudo-gate in the post-metal gate process.

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Verification of the effect of plasma cleaning machine for wide-width plasma equipment

Verification of the effect of plasma cleaning machine for wide-width plasma equipment

How to verify the processing effect of the products or materials processed by the plasma cleaning machine? Is there any other method besides the well-known droplet Angle (contact Angle), tester, and Dyne pen? The answer is yes. The commonly used methods for judging the cleaning effect of wide-width plasma equipment and plasma cleaning machine include droplet Angle (contact Angle) method, Dyne brush method, surface energy test, etc., while other methods need some special instruments or special processing effect to react, and the scope of application is limited.   1. Droplet Angle (contact Angle) is a commonly used measurement method to evaluate the plasma cleaning effect. The test results are accurate, easy to operate, repeatable and stable. The principle of this method is to titrate a certain amount of droplet on the sample surface by optical surface contour method to detect the contact Angle of droplet. The smaller the contact Angle is, the better the cleaning effect will be. The droplet test is used to show whether the plasma has an effect on the processing of the product. In some cases, the result cannot be completely relied on to determine whether the processing requirement has been met. For example, the droplet test cannot show whether the Particle has been removed during Particle removal. Measuring different material surface contact Angle tester is a kind of wide Angle of plasma equipment before and after processing water droplets of instrument, it depends on the processed material molecules or organizational structure of different initial surface energy materials, plasma before and after processing the surface reaction is different also, so after processing point of view is different also, especially the organic material. Note: The Angle of droplet test should be unified. The size of droplet in each test should be as consistent as possible to ensure that the water used in the test does not change greatly.   2. The Dyne pen is widely used in enterprises, and its operation and detection method are also very simple. Dyne is a unit of surface tension. The method wetted and contracted the free energy of different surfaces by means of the different values of the Dyne pen, namely the liquid with different surface tension, so as to judge the level of the free energy of samples. However, due to the influence of different manufacturers producing Dyne pens, manual operation, its repeatability and stability will be slightly less. The smaller the unit dyne value of the surface energy of an object is, the lower the surface energy is. The larger the dyne value is, the greater the surface energy is, the better the adsorption property is, and the better the binding and coating effect is. The Dyne pen can directly measure the energy on the surface of an object, making it convenient and reliable to use. Note: The surface energy test fluid works in the same way as the Dyne pen.   3. SEM scanning is short for electron scanning electron microscope, which can magnify the surface of an object thousands of times, and can take microscopic images of the molecular structure.   4. infrared scanning is the use of infrared detection equipment, before and after the plasma cleaning machine treatment of the workpiece surface polarity groups and elements in the workpiece combination state detection.   Tensile (thrust) testing This method is both practical and reliable for products used for bonding.   6. High power microscope observation method is suitable for related products requiring Particle removal.   7. Slicing method is suitable for the industry of continuous slicing observation, such as PCB and FPC processing industry. By making slicing, the corrosion in the hole of circuit board can be observed and measured by crystal phase microscope.   8. Weighing method is suitable for measuring the effect of plasma on the surface of materials after corrosion and ashing. Its main purpose is to test the uniformity of wide-width plasma equipment treated by the plasma cleaning machine, which is a relatively high index.

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Process integration Requirements for etching process of through-hole plasma plasma cleaning machine

Process integration Requirements for etching process of through-hole plasma plasma cleaning machine

Through hole etching: In view of the previous introduction of the copper-interconnect process, the through-hole process has a complete plasma plasma cleaning machine plasma etching step to form the through-hole process, while the through-hole etching step and groove etching step of the groove process are formed simultaneously in the same plasma etching process. Therefore, the following introduction of copper-through-hole etching process is mainly aimed at the first through-hole process flow; First of all, in the trench process of through-hole etching process, we will focus on the process integration of the through-hole plasma plasma cleaning machine etching process requirements, plasma etching technology corresponding solutions, and its impact on the electrical performance and reliability of contact resistance.   Process integration Requirements for through hole etching process: Although the hard mask method can significantly reduce the damage to the low dielectric constant material during the ashing process, the photoresist mask method is still popular because of its simple process flow and easy control of the key size of the hole.   Process integration Requirements for copper through hole etching process are as follows: (1) Meet the requirements of the plasma plasma cleaning machine etched after the key size, as well as excellent size uniformity, to ensure the uniformity and stability of contact resistance. (2) The through-hole should have a good roundness and should not have a striped opening shape, otherwise it will seriously affect the reliability of the circuit. (3) The dielectric etching has sufficient selection ratio for the etching stop layer, which can not only ensure the plasma plasma cleaning machine through the etching process window, but also prevent the breakdown of the metal copper in the front layer.

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