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What are the types of industrial plasma equipment

What are the types of industrial plasma equipment

        I believe that people in the industry are not unfamiliar with the word plasma equipment or plasma cleaning machine, because there are many domestic industrial products using plasma cleaning machine such equipment for surface cleaning. Many manufacturers in the need to purchase machines, is not very clear what is the plasma cleaning machine, divided into how many kinds of plasma equipment types. Sometimes we plasma equipment professional manufacturers received a phone call from customers, customers said to buy plasma equipment, ask which time may suddenly say not good, because there are many kinds of industrial plasma cleaning machine this plasma equipment. Now let's do a brief introduction of the types of industrial plasma equipment. At present, the names of industrial plasma equipment on the market include plasma cleaning machine, plasma equipment, plasma cleaning machine, vacuum plasma equipment, low temperature plasma equipment, plasma surface treatment equipment, roll-to-roll plasma equipment, atmospheric plasma equipment, etc., these plasma equipment is the common name in the market at present. Divide into types, there are vacuum plasma cleaning machine equipment and atmospheric pressure atmospheric plasma cleaning machine equipment, and wide linear plasma cleaning machine, different products use equipment process are not the same. Therefore, customers should know what kind of industrial plasma cleaning machine they need for their products to be pretreated before purchasing the machine. If they know, they can easily buy the product they are satisfied with when they buy the machine. Of course, it doesn't matter if you don't know. As a professional manufacturer of plasma equipment, we will provide customers with satisfactory services and detailed products, and devote ourselves to helping customers solve their problems, taking customer satisfaction as the standard.

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Application of COGLCD Plasma Cleaning Machine in COG-LCD Production Process

Application of COGLCD Plasma Cleaning Machine in COG-LCD Production Process

The COG assembly production process of liquid crystal display is to paste the naked IC on the ITO glass, and make the pins on the ITO glass and the pins on the IC connect and conduct by using the compression and deformation effect of the golden ball. With the continuous development of fine line technology, Pitch 20μm, 10μm products have been developed. As the surface cleanliness of ITO glass is required to be very high, the weldability of ITO glass is required to be very high. It must be soldered firmly, and no organic or inorganic substances can be left on the surface to prevent conduction between ITO glass electrode and IC Bump. Therefore, the cleaning of ITO glass is very important. In the current ITO glass cleaning process, the application of COG-LCD production process, we are trying to use a variety of cleaning agents (alcohol cleaning, ultrasonic cleaning) to clean the glass, but due to the introduction of cleaning agents, will cause other related problems due to the introduction, therefore, to explore a new cleaning method has become the direction of the manufacturers. It is an effective cleaning method to use COGLCD plasma cleaning machine to clean the surface of ITO glass step by step. In the plasma cleaning process of liquid crystal glass, the activation gas used is oxygen plasma, which can remove oil dirt and organic pollutant particles, because oxygen plasma can oxidize organic matter and form gas emissions. The need to pay attention to the problem is that after removing particles, need to add a device in addition to static electricity, the cleaning process: ejection - oxygen plasma - eliminate static electricity. After the dry cleaning process of LCD and its electrode terminal ITO, the cleanliness and adhesion have been greatly improved. The cleaning procedure is as follows: 1. Equipment: COGLCD plasma cleaning machine; Gas: Oil-free air drying. 2. Put 20PCS IC Bump on (stick to the yellow tape) and use Plasma for cleaning. Then heat treat the IC on the LCD after normal heat treatment. 3. Display the unsealed silica gel products on the product with 23PCS, conduct Plasma cleaning, and then detect and observe the display of the white strip. 4. Take 2pcs of products with OK display, 1pcs of ITO exposed in the same position will be stained with sweat (without gloves, directly wear finger cover, after about 15 minutes, the finger cover will be stained with sweat), and then power on the products together to observe the corrosion situation (workshop temperature control range: 22℃+/-6℃, humidity control range: 55%+/-15%). Plasma cleaning of product A; Product B was not cleaned. After continuous energized (200 hours) test, the results are as follows: product A has one missing line when energized for 71.5h, and the second missing line when energized for 77H; However, product B showed four lines missing when it was powered on for 4.5h. From the above experimental data, it can be seen that: 1. Plasma cleaning has no adverse effect on the product; 2. Plasma can clean the trace conductive dirt on the surface of ITO and improve the white strip phenomenon caused by leakage; 3. COGLCD plasma cleaning machine plasma cleaning can reduce the corrosion speed and corrosion degree of contaminated products. According to the above principle analysis and experimental data, the plasma cleaning machine can be used to clean liquid crystal glass and COG-LCD semi-finished glass assembly production process, in order to improve product quality and stability.

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Plasma technology manufacturers plasma single particle movement

Plasma technology manufacturers plasma single particle movement

The motion of single particle in plasma is mainly concerned with the motion of single charged particle in an external magnetic field. It is very simple for charged particles to move in a uniform, constant magnetic field. The constant velocity motion of a parallel field, and the constant velocity motion of a vertical field, is the circular motion about the magnetic field lines (Larmor circle), that is, the circumferential motion of a charged particle. If in addition to the magnetic field, there are other external forces F, the particle in addition to the vertical movement along the magnetic field, but also in two kinds of motion, the rotation and drift. Drift motion is when the center of a Larmor circle (the guiding center) moves perpendicular to the magnetic field. It can be caused by static electricity or gravity. In the case of non-uniform magnetic field, drift can also be caused by the magnetic field gradient and the curvature of the magnetic field. Static electricity causes an equal drift of positive and negative charges, so no current is generated. In contrast to the drift of positive and negative charges that do not produce static electricity, a current is generated. Because the magnetic field changes slowly in time and space, the particle motion can be thought of as a superposition of the cyclotron motion and the centrally guided motion. To simplify the problem, it is possible to consider only the motion of the center and not the fast circular motion, which is called the drift approximation. For the particle orbit theory, the drift approximation method is used to study the motion of particles. There are three adiabatic invariants in the slowly varying field. The more important one is that the magnetic moment of the particle is the velocity component perpendicular to the magnetic field B, and the mass is m. This property and the charge particle under the action of magnetic force to maintain the kinetic energy is limited to a certain shape of the uneven magnetic field. For example, the geomagnetic field can limit the radiation belts (Van Allen belts) that electrically charged particles form on Earth. Magnetic mirror devices controlled by thermonuclear fusion also use this property to limit plasma. The above is the introduction of CRF plasma technology manufacturers, I hope to help you.

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Low-temperature plasma technology manufacturers plasma chemical vapor deposition technology

Low-temperature plasma technology manufacturers plasma chemical vapor deposition technology

By low temperature plasma (non-equilibrium plasma) as an energy source, the workpiece on the cathode glow discharge under low pressure, using the glow discharge (or the other heating body) the workpiece heated to a predetermined temperature, then the right amount in the reaction gas is piped in, and then through a series of chemical reactions and plasma reaction, form a solid film on the surface. Includes chemical vapor deposition and glow discharge enhancement and other general technology. The collisions between the particles produce strong ionization of the gas, which activates the reaction gas. Cathode sputtering occurs at the same time, which provides a clean surface with good activity for deposition of thin films. Therefore, the whole deposition process is distinctly different from that of thermal activation alone. The interaction of the two creates favorable conditions for improving the bonding force, reducing the deposition temperature and accelerating the reaction rate of the coating. According to the type of plasma volume source, plasma chemical vapor deposition technology can be divided into DC glow discharge, RF discharge and microwave plasma discharge. When the frequency of CVD reaction increases, the enhancement effect of plasma on CVD reaction becomes more obvious, and the temperature of compound formation decreases. The PCVD process unit includes a deposition chamber, a reactant transport system, a discharge power supply, a vacuum system and a detection system. The gas source uses the gas purifier to remove water and other impurities, obtains the required flow rate through the adjustment device, and then sends the gas source into the deposition chamber at the same time, under the conditions of certain temperature and plasma activation, obtains the required products, and deposits them on the surface of the workpiece or substrate. Therefore, the production process of PCVD includes plasma physical process and plasma chemical reaction process.

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Plasma cleaning manufacturer plasma wave mode

Plasma cleaning manufacturer plasma wave mode

The wave patterns in plasma are very complicated. It includes transverse waves (wave vector k perpendicular to the electric field E) and longitudinal waves (k parallel to E) as well as non-transverse and non-longitudinal waves. These include elliptically polarized waves, circularly polarized waves and linearly polarized waves. The phase velocity of the wave can be greater than or equal to or less than the speed of light in vacuum C. The wave group velocities and phase velocities may be parallel, nonparallel, or antiparallel. Since charged particles in the plasma can influence wave propagation through the electromagnetic field of the wave, waves can take many forms. Under the action of external magnetic field, the wave form, magnetic field disturbance and particle motion affect each other, making the wave shape more complex. For example, the separation of positive and negative charges creates an electrostatic field with a Coulomb force as a restoring force, resulting in a Langmuir wave. The bending of the magnetic field line, its tension is the restoring force, resulting in the Alwyn wave; Various gradients in the plasma, such as density gradient and temperature gradient, will cause drift motion, which can be coupled with the wave mode to produce drift wave. Waves can be divided into cold plasma and hot plasma waves. When the thermal velocity of the particle is much less than the wave velocity and the cyclotron radius (magnetized plasma) is much less than the wavelength, it is called cold plasma. The wave phenomenon of the particle is studied by magnetohydrodynamics method. A wave in an uncooled iso-body has a light wave whose velocity is greater than the speed of light C in a vacuum. In the case of magnetic plasma, which is anisotropic, the permittivity becomes a tensor. Just as there are two waves in other anisotropic media, there are also two types of waves in magnetized cold plasmas: ordinary and unusual. When the refractive index of the plasma is n=0, the wave is truncated and reflected. When n→∞, the wave reacts with the resonant particle and is absorbed by the particle. For example, when the wave vector k is parallel to the external magnetic field, an unusual wave of frequency w= WCe will resonate with electrons whirring around the magnetic field, while a normal w= WCi wave will resonate with cyclotron ions, which are the cyclotron frequencies of electrons and ions respectively. In this case, the wave energy is absorbed and cyclotron damping is formed. For hot plasmas, the thermal motion of particles and the finite cyclotron radius introduce new modes and effects. In addition to light waves, there are electron Langmuir waves and ion sound waves in the unmagnetized thermal plasma. A Langmuir wave resonates with an electron with a similar velocity, creating Landau damping. A wave in a magnetized thermal plasma characterized by a frequency w=lwce(l=0,1,2,3...) for reasons such as the Doppler effect. And w= lWCi (l=0,1,2...). The anomalous wave of... will resonate with cyclotron ion, resulting in Cherenkov and cyclotron damping. In the inhomogeneous plasma, apart from the drift wave, different wave types can be converted to each other under certain conditions, such as extraordinary wave can be converted to normal wave or compressional wave. Shock waves, collisionless shock waves and solitary waves are nonlinear waves. When nonlinear effects are taken into account, different waveforms can be converted to each other or excited by each other, and compressional waves can be excited by shear waves. Wave theory not only studies the relation of dispersion, but also studies the interaction between wave and wave in plasma and wave and particle in plasma.

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Plasma plasma processing system manufacturers indium gallium arsenic etching

Plasma plasma processing system manufacturers indium gallium arsenic etching

The main use of indium gallium arsenic is as a channel material, and it is considered as the future channel material of nanometer NMOS. On the one hand, indium gallium and arsenic will form a layer or multiple quantum well transmission in the channel, and its mobility can reach the level of single crystal, and the main restriction will appear at the contact interface. The advantage of this for etching is a single purpose, which is to define the pattern of the channeling material. In the early stage, CCl2F2 gas was used for etching. However, due to the reasons of selective ratio and plasma damage to the underlying film, two combination gas plasma etching schemes, CHF3+BCl3 and CF4+BCl3, were developed. In effect, both schemes can achieve a faster etching rate and a higher selectivity ratio to Inalas, and are easier to achieve at low voltage and high RF power. The difference in etch rate between two similar materials is due to the difference in volatilization of reaction products. Both CaCl3 and AsCl3 are relatively volatile, while AlCl3 is more difficult to volatilize, which will affect further etching. The amount of fluorine will affect the etching rate of Inaias. The increase of fluorine gas flow rate will significantly change the selection ratio of indium aluminum arsenic and indium gallium arsenic. Gas combinations using CHF3 and BCL3 or CF4 and BCL3 options can more than double the ratio. The influence of the pressure and radio frequency power of the two gas combinations on the etching rate: the higher the pressure, the lower the etching rate of the two combinations, which is consistent with our general etching law, because the increase of pressure will increase the probability of plasma collision and annihilation, reduce the energy of plasma, and lead to the decrease of the etching rate. In general, the higher the RF power, the faster the etch rate, because the dissociation rate of the plasma will be higher. These methods of etching are more common, more thoroughly studied and reported a lot. In contrast, the etching details of indium gallium and arsenic in the fabrication of the fet have not been disclosed, despite reports of indium gallium and arsenic. Judging from the gas used, it should be a combination of chemical reaction and high-speed bombardment. BCl3 is easy to react with various elements in indium gallium and arsenic, while Ar may be the source of bombardment. From the defined figure, there is an inclined side wall topography, but the overall height is high. The newly developed neutral particle etching has also been applied to the etching of indium gallium and arsenic. The research group in Japan has done more research on the neutral particle etching of group 35 compounds. Not only did they use this very advanced etching technique, but they also used organic materials as the etching mask. The original organic mask material is soft and easy to deform, collapse and produce defects under the bombardment of plasma, which leads to the deviation of graphic definition. This is also the reason why the processing of integrated circuits gradually changes from soft and single mask material to hard and multi-layer mask material. But paired with neutral particle etching, softer organic masks are available again. Because the neutral particles mainly rely on dry chemical etching, the electron temperature is very low, which can effectively protect the mask material. After indium gallium arsenic and gallium arsenic were repeatedly subjected to molecular beam epitaxy to form a multilayer structure, a polyethylene glycol containing an iron compound (an iron oxide containing water) was coated on the surface of the multilayer structure. Ferric compounds exist as the "nucleus" of organic materials, which can effectively control the distance between different nuclei. After completion, hydrogen plasma is used to remove the outer protective shell of the nucleus and then the oxygen in the oxide is removed to form isolated iron nanoparticles, which are distributed evenly and equidistant on the surface as a mask for etching. In order to prevent the secondary oxidation before etching, the hydrogen plasma can be processed before etching. The pattern is defined with chlorine neutral particles to complete the deep hole etching. The method can also be used for indium gallium arsenic and gallium arsenic compound semiconductors to form holes or grooves with high aspect ratio.Because the temperature can directly affect the rate of chemical reaction, this method can be used to control the etching rate and morphology in etching. There are problems in both low temperature and high temperature. It is difficult to obtain enough nanostructures at low temperature, and the morphology of the high surface will deteriorate seriously. Only at 50℃ can the deficiencies of the two aspects be balanced. The bias is also critical to define the morphology of th

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