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2021 plasma cleaning machine FAQ

2021 plasma cleaning machine FAQ

CRF Xiaobian on 2021 plasma cleaning machine surface treatment common problems were discussed and summarized. 1. How much power is the plasma surface processor? Ordinary plasma equipment power around 600 w to 1000 w, some imported power to thousands of power, need according to actual situation to see whether can meet the production requirements, by definition is, the better the effect of power, the higher the processing, the corresponding price will be expensive, but it also depends on what kind of material, high power improper handling may also damage the material. 2. How long can the product be retained after the surface treatment of the plasma cleaning machine? Timeliness can keep how long time is according to the material of the product itself, suggest to avoid product by the secondary pollution, after plasma surface treatment on the next working procedure, so that we can effectively solve the problem of secondary pollution, improve product performance and quality, generally according to the material processing situation for a few minutes to a week is possible. 3. Whether harmful substances will be produced when plasma equipment is used: This problem also need not worry, because the plasma equipment in the operation has a complete protective measures, will be equipped with exhaust system, ventilated smoothly a small amount of ozone will be ionized by the air, so there is no harm to the human body. 4, plasma cleaning machine surface treatment equipment processing time: Plasma equipment modified the polymer surface chemically. Because of free radicals, the longer the treatment time of plasma equipment is, the greater the discharge power will be. It is necessary to test before on-line to master the appropriate treatment time of the product. The above is just a simple list of several common questions and answers, if you need to know more welcome to call consultation, we will have a professional plasma cleaning machine engineering for you to deal with the related problems.

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What are the factors that cause abnormal discharge of vacuum plasma cleaning machine

What are the factors that cause abnormal discharge of vacuum plasma cleaning machine

Why the discharge of the vacuum plasma cleaning machine is abnormal? Please operate the following operations accompanied by professional personnel. The core components of RF plasma cleaning machine are RF power supply and matcher. Because the matcher can not work normally, there may be a normal power start and no discharge in the cavity. 1. Matcher fault description: (1) Air capacitance is only: Failure reason: the air capacitor in the operation of friction conductive impurities, causing local short circuit, friction caused by the rotor shaft damage, can not be adjusted normally. (2) Failure of imported transistor: Failure reasons: the air capacitor moving plate shaft is damaged, the air capacitor can not work normally, the RF output impedance can not be adjusted, the transistor is broken down, etc.; In the process of use, improper adjustment of the initial value of the matcher, too long matching time or unstable glow discharge in the chamber of the vacuum plasma cleaner will also cause damage to the transistor. 2. Matters needing attention in daily use of matcher: (1) Check the insertion place of the needle regularly in the vacuum chamber to prevent serious oxidation and fracture. (2) confirm that the electromechanical plate of vacuum plasma cleaning is placed correctly and there is no error in sequence; If the number and spacing of the electrode plate need to be adjusted during use, it is necessary to confirm the automatic matching state of the matcher. If the matching time is long, the initial value needs to be adjusted. (3) Confirm the initial value of the matcher regularly. Long-term use may lead to deviation of the initial value, which needs to be confirmed regularly and adjusted according to the actual situation. (4) If there is serious initial deviation, it is necessary to confirm whether the inside of the pair and the air capacitor blade are misplaced and whether there is a ignition phenomenon. If there is a ignition, it should be dealt with in time. The fixed gas capacity blade and the air capacitor actuator blade basically coincide when the volume is adjusted to the maximum; If there is a burning phenomenon, confirm whether the blade is burned out. If the burned position can be polished before use, the distance between the blades is too close, there will be burning phenomenon. If the capacitor cannot be adjusted, the matcher can be opened and the capacitor can be adjusted manually to confirm whether the blade capacitor can rotate normally. We should pay attention to whether the transmission part of the motor and the air capacitor does not rotate. If it is stuck, we should report it for repair in time. If there is a slip between the gear and the shaft, we can handle it by ourselves first. 3. Other matters (1) The matcher can be operated for a long time, and attention should be paid to observation and cleaning at ordinary times. To regularly check the pair of internal air capacitor area, open the cover, see if there is any air capacitor friction produced by impurities deposition, if there is, to clean with clean cloth + alcohol, because impurities are usually conductive material, can not be blown with gas, so as to avoid the occurrence of ignition and local control short circuit. (2) when the vacuum plasma cleaning machine matcher failure occurs, immediately confirm the placement of electrode plates, the placement of pin male female head, shielding box inside connection (if there is a bad contact, whether conducting strip in contact with the outer wall, whether too close), the determination of the initial value of verifier, interior is clean, the air capacitor mismatch and fire, air condenser is rotation (slip), drive motor can work normally, the RF power output, whether all wiring for short circuit, etc. If there is a burning odor in the pairing device or the above problem cannot be solved, please contact a professional in time. (3) The service cycle of the internal accessories of the matcher can not be clearly determined, which is related to the use environment, product treatment, proper use, etc., and the main reason may be short circuit or burn caused by impurities in the matcher.

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Effect of plasma etching on low-K TDDB

Effect of plasma etching on low-K TDDB

At advanced technology junctions, the dielectric interval of the metal layer in the back section is reduced to less than 100nm, and the introduction of low-K materials to reduce RC delay greatly reduces the mechanical properties of the dielectric and increases the number of defects. These adverse factors lead to more and more serious dielectric breakdown problems between metal interconnects. The TDDB of low-K is similar to the TDDB of gate oxide we discussed earlier, but it is also very different. One is that the gate oxide layer is longitudinal breakdown, and the graphical process has limited influence on it, but the low-k at the back section is generally transverse breakdown, and the Cd, morphology and LWR determined by the graphical process have a decisive influence on it. Secondly, the Cu chemical mechanical grinding process introduced in the copper interconnection will lead to metal ion residue and water vapor invasion, which are not found in the gate oxide layer. In addition, plasma damage to low-K during etching and metal barrier sputtering deposition is also unique to low-K TDDB. Although the dielectric spacing of the back segment is much thicker than the gate oxide layer thickness of the same node, for example, the gate oxide layer of the advanced technology node is only about 2nm, the dielectric spacing of the back segment can reach about 35nm, but due to the complex material properties and process, the low-K breakdown is no less challenging than the gate oxide layer breakdown. Low k material SiCOH leakage current under the condition of high temperature and high pressure stress change with time, the initial phase can be observed clearly the current decline, general is limited due to charge in the dielectric, with stress, keep up trap charge induced leakage current increase slowly, this phase will last a long time, until the current rapid increase, is the breakdown. The typical Cu/ Low-K breakdown mode is generally along the interface between Low-K and the overburden layer, and there is obvious Cu ion diffusion. Breakdown may be the breakdown of the internal bonds in the dielectric, or the diffusion of metal into the insulation. The failure time model is needed to extrapolate the test results from the high voltage to the low voltage, i.e. the operating voltage. There are two widely known models for dielectric breakdown of metal layers. One is the thermochemical breakdown model, in which the Si-O bond breaks at high pressure, which is intrinsic failure; the other is the charge injection model, in which the copper ion diffuses into the human dielectric and leads to breakdown, which is unintrinsic breakdown. For the back-segment Cu/ low-K structure TDDB, the influence of Cu electrode is very significant due to the high dispersion of Cu and the instability of copper oxide. At present, most people in the industry accept the latter model, also known as the interface breakdown model driven by current and catalyzed by copper ions. In this model, the accelerated electrons from the cathode are injected into the anode by either Schottky emission or Poole-Frenkel emission. The Schottky emission corresponds to the low electric field condition (<1.4 mV /cm), which is the thermal excitation of electrons across the barrier at the metal-dielectric interface. And Poole - Frenkel emission corresponds to the high electric field (> 1.4 MV/cm), for the dielectric in trap electrons into the dielectric in electric field enhanced thermal excitation conduction band, the high energy electron after reaching anode, will part with CuO occurs on the surface of the anode electrochemical reaction produces copper ions, and then Cu ion diffusion or under the action of drift in the dielectric in electric field, a kind of Cu ion motion path for low - k and the top layer of interface. If there is no CuO on the surface of the copper electrode, but only Cu atoms, basically no copper will be observed to enter the dielectric, so the choice of grinding fluid during CMP, copper surface cleaning after CMP, CuO reduction in H2 environment, isolation of water vapor to avoid water oxidation of Cu are very important for low-K TDDB. According to the Se and PF conduction current formulas and the assumption of the charge injection model that the damage degree of the dielectric is proportional to the amount of charge injected into the dielectric, the failure time when the dielectric damage reaches the critical point can be expressed as TF = Aexp (-ϒE) exp (Ea/kBT) (7-18) Among them, the ϒ for electric acceleration factor. Equation (7-18) is also known as the model root E of TDDB. The failure time of TDDB under low electric field can reach several years. More experimental results show that the failure time of Cu/ low-K structure under low electric field is closer to the failure time derived from the root E model, and the correctness of the root E model is confirmed through experiments. By increasing the porosi

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What gas is used for plasma surface treatment to remove surface residues and dirt

What gas is used for plasma surface treatment to remove surface residues and dirt

Plasma surface treatment machine in the cleaning process with different gases, the cleaning residual dirt effect is also very different. One of the commonly used gases is the inert gas argon (AR), which can effectively remove nanoscale surface pollutants in the cleaning process of vacuum equipment. If you want to strengthen the etching effect, you can pass oxygen (O2), can effectively remove organic pollutants, such as photoresist, etc. Some hydrogen (H2) can be used in combination with other oxides that are more difficult to remove. A mixture of hydrogen and nitrogen gas (95% nitrogen and 5% hydrogen) is usually chosen. The widely used gas is nitrogen (N2), which is cheap to produce. The gas is mainly used for surface activation modification of materials in combination with on-line plasma surface treatment technology. It can also be used in a vacuum. Nitrogen (N2) is a good gas to improve the surface wetting property of materials. In addition, there are also carbon tetrafluoride (CF4), sulfur hexafluoride (SF6) and other similar special gases, plasma surface treatment machine using these gases on the etching and removal of organic matter is more significant. But the premise of the use of these gases is that they must have a good anti-corrosion gas path structure, and they must wear protective cover and gloves to work normally, although there will be no danger but protection or do enough.

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Why the power shift of the plasma surface processor is too large

Why the power shift of the plasma surface processor is too large

If you need to deal with it, please contact professional personnel, the actual processing process is complex and changeable. The reasons why the power supply of the plasma surface treatment machine deviates are as follows: 1. Inversion phenomenon exists between positive and negative electrodes of the electrode plate of the vacuum chamber. 2. Whether the power switch of the matcher is turned off; 3, electrode needle male and female head oxidation is serious, poor conduction. 4. Whether the connection cable between the power supply and the distribution box is loose or the welding wire falls off. 5. Whether the system parameters of the plasma surface processor have been set. Test and trial operation mode is as follows: Keep automatic mode in automatic mode: suitable for the system with little difference between ignition position and coordination. 1. Connect the system as needed. 2. Switch to maintain, automatic and operating state. 3. Turn on the radio frequency. 4. Automatic matching. 5. After turning off RF, the system will automatically record the matching position and adjust the position from the next time. Automatic mode under preset: it is suitable for the system where there is a big difference between ignition position and pairing position. 1. Connect the system as needed. 2. Switch to the preset and automatic operating state. 3, RF off, automatically adjust the position of CACB, so that it is in the ignition position in automatic and preset state. 4. Turn on the radio frequency. 5. Automatic matching.

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Check this out before you start cleaning your device with a plasma surface processor

Check this out before you start cleaning your device with a plasma surface processor

The continuous development of science and technology, plasma surface processor cleaning equipment application is more and more widely, activation can be used for material surface modification to improve adhesive adhesion, etc., involved in automotive, semiconductor, aerospace, plastics, materials science, optics, electronics, medicine, environmental protection, biological and other fields, so using plasma surface processor: just what are the advantages of cleaning equipment? Because of its low cost, simple and flexible operation, the plasma surface processor can easily change the type of gas and processing parameters. The use process will not cause any harm to the operator's body; As far as the processing mode of plasma surface processor is concerned, its cost is low, and it has objective cost performance and advantages. From the point of view of environmental protection, the whole process of plasma surface processor cleaning equipment is pollution-free, pollution-free, green environmental protection. The plasma surface treatment machine can keep the operator away from the harm of harmful solvents to human body, and also avoid the problem that the object is easily damaged when wet cleaning. Avoid the use of ODS harmful solvents, so that after washing will not produce harmful pollutants, so it belongs to the green cleaning method of environmental protection, under the global environmental protection of great attention, its importance is increasingly prominent. After the plasma surface processor cleaning equipment cleaning, the cleaned object is dry, no need to go through air drying or drying treatment can be sent to the next process, can improve the processing efficiency of the entire process line. Plasmas produced using high frequencies are different from direct light such as lasers. The direction of motion of the plasma is scattered, which allows it to penetrate into tiny holes and depressions in the interior of an object to perform various cleaning tasks, so the shape of the object being cleaned does not need to be considered too much. In addition, for these difficult to clean parts, its cleaning effect is similar to or better than freon cleaning. Processor therefore plasma surface cleaning equipment in the application of high and new technology industry is very broad, especially in the automotive, semiconductor, microelectronics, integrated circuits, electronics and other industries, the application of vacuum plasma surface treatment machine is a kind of important equipment, is also a component indispensable to the production process, is the key to improve the quality of products. Processor from plasma surface cleaning equipment in the application in various industries, plasma surface treatment machine has many advantages, it is because it is of these advantages, makes plasma surface treatment machine equipment in cleaning, etching, activation, icp, plating, plasma coating ashing, surface modification and so on has been widely used, and through the processing, can effectively improve the wettability on the surface of the material, the cohesive force, so that a variety of materials are able to do coating, coating and other operations, enhance the bonding ability and cohesive force, also can remove organic pollutants, the oil or grease.

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