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Application of plasma cleaning machine in the photoelectric industry

Application of plasma cleaning machine in the photoelectric industry

Before the silver adhesive is applied: the pollutants on the substrate will cause the silver adhesive to be spherical, which is not conducive to the adhesion of the chip, and it is easy to cause damage to the chip in use. Using plasma cleaning can greatly improve the surface roughness and hydrophilicity of the workpiece, which is conducive to tile and patch, and can greatly save the amount of silver adhesive and reduce the cost.   Before lead bonding: the chip is attached to the substrate. After curing at high temperature, the pollutants on the substrate may contain particles and oxides, etc. Due to physical and chemical reactions, the welding between the lead and the chip and the substrate is incomplete or poorly adhered, resulting in insufficient connection strength. Plasma cleaning machine can improve the surface activity of the lead before connection, so as to improve the bonding strength and tension uniformity of the lead.   Before LED sealant: When LED is injected with epoxy glue, pollutants will lead to higher bubble formation rate, thus reducing product quality and service life. Therefore, it is also worth paying attention to avoid bubble formation during post-sealant. Plasma cleaning machine after plasma treatment, chip and substrate close combination, better combination with colloid, the formation of bubbles will be greatly reduced, but also significantly improve the heat dissipation and light rate.   It can be seen from the above points that the surface activation of the material, the removal of oxides and particulate pollutants can be demonstrated by the tensile strength and infiltration characteristics of the bonded leads on the surface of the material.   Plasma cleaning machine has nanoscale cleaning capacity, the surface characteristics of the sample will change under certain conditions. As gas is used as cleaning medium, it can effectively avoid the re-contamination of the sample. Plasma cleaning machine can not only enhance the adhesion, compatibility and wettability of samples. At present, plasma cleaning machine has been widely used in the fields of optics, optoelectronics, electronics, materials, polymers, biomedicine, microfluidics and so on.

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Plasma surface modification of polymer materials

Plasma surface modification of polymer materials

In the modification of polymer materials, the application of plasma surface treatment is mainly as follows:Surface hydrophilic or hydrophobic:The hydrophilic groups such as COOH, -C=O, -NH2 and -OH will be added to the surface of ordinary polymer materials after being treated by gas plasmas such as NH3, O2, CO, Ar, N2 and H2. The longer the treatment time is, the lower the contact Angle of the droplets will be, and the fluoropolymer surface will increase its hydrophobicity after being treated by fluoropolymer such as CF4 and CH2F2 plasma. The results showed that the contact Angle between the untreated PET film and water was 73.1°, and it was treated with Ar plasma for 5min. After being placed for a day, the contact Angle with water decreased to 33.7°. The contact Angle increased slowly with the extension of time, indicating that the treatment effect declined with time. The contact Angle measured after 10 days was 41.3°. After 20 days of treatment with N2 plasma, the surface polarity of LDPE disappeared. After plasma treatment of oxygen on the surface of 3-hydroxybutyl-3-hydroxypentanoic acid copolymer film, it was also found that the contact Angle of oxygen recovered from 20° to 70° after 60 days. It is believed that the polar groups introduced by plasma surface treatment are attenuated due to the movement of the polymer chain and thus transferred to the polymer material body. PET membrane is immersed in organic solvent with strong interaction before treatment. The rearrangement of molecular chains caused by solvent reduces chain activity and can stabilize the treatment effect.   The treatment effect decays not only with time but also with temperature. The surface of the polymer film was treated by O2 plasma and heat-treated at 80~140℃. The results showed that the surface tension and wettability of the film were increased after plasma treatment, and the plasma treatment effect was weakened after heat treatment. After heat treatment of PET, nylon and other surfaces, the surface energy and surface-COOH and -OH groups decreased significantly. The surface tension of polyimide and polyphenylene sulfide decreased obviously after heat treatment. This also indicates from one side that the difficulty degree of the polymer molecular chain itself in motion is also an important factor affecting the speed of reaction.   Improve bonding ability:   Plasma treatment can easily introduce polar groups or active points on the surface of polymer materials, form chemical bonds with the bonded materials and adhesives, and improve the bonding performance by increasing the van der Waals (intermolecular forces) between the bonded materials and adhesives. This process is not limited by the material quality and will not damage the overall mechanical properties of the material, which is far better than the common chemical process. Plasma treatment can obviously improve the adhesion between polymer films and improve the mechanical properties of composites. If the bonding property between the reinforced fiber and the base is not good, the stress cannot be transferred well, instead, the stress concentration source will be generated, leading to the deterioration of the mechanical properties of the composite. Ultrahigh molecular weight polyethylene (UHMWPE) fibres are plastically treated to enhance their binding strength with epoxy resins by more than four times. After treating polyethylene fiber with Ar, N2, CO2 and other gas plasma, the bonding between polyethylene fiber and PMMA(polymethyl methacrylate) was enhanced. Its toughness index and breaking strength, plasma treatment of high strength PE fiber can improve the fiber - epoxy resin composite bonding strength.   Improve printing and dyeing ability:   On the one hand, plasma surface treatment can increase the surface roughness of the treated material, destroy its amorphous region, make the surface structure of the treated material loose, and make the accessible area of dye/ink molecules increase due to the increase of the microgap; On the other hand, the introduction of polar groups on the surface can make the surface of the treated material easy to adsorb dye/ink molecules by intermolecular interaction force, hydrogen bond or chemical bond, thus improving the dyeing performance of the material. The adsorption of disperse dyes on PET fiber was enhanced by low temperature plasma treatment. After plasma treatment at low temperature, the linen fabric was washed with hot water. The dyeing properties of the fabric were good and the mechanical properties were not damaged. The dyeing properties of wool fabrics were improved by plasma treatment at low temperature. The use of toxic substances was reduced and the content of halogenated organic compounds was reduced before wool dyeing was treated by air plasma. Low temperature plasma method can improve dye fastness of polyester fiber.   The surface modification of plasma polymers is mainly aimed at the surface modification

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Surface modification of polymer by low temperature plasma treatment

Surface modification of polymer by low temperature plasma treatment

The low temperature plasma surface treatment system technology provides a means of microscopic modification of environmentally friendly and low-cost materials without the need for mechanical processing and chemical reagents. Low temperature plasma surface technology can not only clean, activate and etch materials, but also optimize the surface of plastic, metal or ceramic materials, improve their bonding ability or give new surface characteristics. Its potential medical value includes improving the surface hydrophilicity or hydrophobicity of the material, reducing surface friction, and improving the surface barrier of the material.   Low temperature plasma surface treatment is a technique that can improve the adsorption capacity of polymer surface by changing only a few atomic layers. The modified polyolefin, silica gel and fluoropolymer have good adhesive properties. By using low temperature plasma technology, we can obtain the required material surface without losing the physical properties of the material itself. Plasma treatment will not affect the physical properties of the material, the material parts treated by plasma compared with the parts not treated by plasma, is generally difficult to distinguish visually, physically.   Low temperature plasma surface treatment is usually a plasma reaction process that causes changes in molecular structure or atomic arrangement on the surface. Plasma surface treatment can produce highly active groups at low temperature even in inert environment such as oxygen and nitrogen. In the process, the plasma also produces high-energy ultraviolet light, which, along with the rapidly producing ions and electrons, provides the energy needed to break the polymer bonds and produce surface chemical reactions. In this chemical process, only a few atomic layers on the surface of the material are involved, and the bulk properties of the polymer remain unchanged. The selection of appropriate reaction gas and process parameters can promote some specific reactions, resulting in the formation of special polymer attachments and structures. Reactants can be selected to cause the plasma to react with the substrate to form volatile attachments. The treated appendages on the surface of the material can be removed by vacuum pump without further cleaning or neutralization, and such functions as surface cleaning modification and etching can be realized.

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Technology principle of plasma nitriding equipment

Technology principle of plasma nitriding equipment

General plasma nitridation process requires gas pressure of 3~10mbar to ensure complete contact between plasma and substrate. For the substrate with complex shape, such as surface trench or thread, the distribution of plasma nitride equipment parameters near the complex shape will be different to some extent, causing changes in the surrounding electric field, thus changing the ion concentration and ion bombardment energy in the region. If conventional plasma nitriding is used, ion collisions are more likely to occur in the plasma sheath, resulting in reduced ion energy and more difficult to activate oxide metal surfaces such as stainless steel. The complex shape of the substrate conditions can also lead to regional temperature overheating and the nitriding characteristics are different from other substrate conditions. However, due to the abnormal glow discharge caused by conventional plasma nitriding process, the discharge parameters are interrelated and coupled, so it is impossible to control the nitriding process by changing one discharge parameter alone.   To solve this problem, the researchers developed a low-pressure plasma that does not glow abnormally when the pressure is below 10PA. In the presence of radio frequency, the filament produces a series of low-pressure plasmas that fill the processing space and contain a large number of active atoms, thus increasing the efficiency of nitriding. In the nitriding process of RF plasma equipment, the generation of plasma is separated from the control of substrate bias, so ionic energy and substrate surface flux can be controlled separately. Because the working pressure is low, the amount of air consumed is reduced accordingly.   NH atoms are nitrated using a low-energy DC glow discharge. These highly active atoms are used for nitridation. The whole process requires an external power source to heat the workpiece in a process similar to gas nitridation. The process can not only control the surface topology, but also select whether the composite layer is formed, and control the thickness of the composite layer and the depth of the diffusion layer without changing the surface structure characteristics. If there are narrow cracks and holes in the metal surface, nitriding can be easily achieved by this process.   Conventional plasma nitriding processes use DC or pulse abnormal glow discharge. The nitriding effect is good in low alloy steel and tool steel, but bad for stainless steel, especially austenitic structure stainless steel. The nitriding process precipitates CrN at high temperatures, so the metal surface is very hard and wear resistant, but the disadvantage is that it is easy to corrode. The modified layer prepared by this process contains a nitrogen-rich layer called extended austenite, which has been successfully solved by low temperature and low pressure discharge technology.

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Microelectronic plasma cleaning machine equipment processing application

Microelectronic plasma cleaning machine equipment processing application

The development of microelectronics has fused information, communication and entertainment. The miniaturization of microelectronic devices is made possible by means of plasma technology. In the 1990s, plasma technology entered the field of microelectronic device manufacturing. The following will explore the plasma cleaning machine equipment in the core processing applications (examples of etching, deposition and doping).   In the late 1970s and early 1980s, plasma technology has become a key technology in IC manufacturing process. Today, 30% of the manufacturing process uses plasma. The global microelectronics industry bought $17.6 billion worth of plasma cleaning equipment in 1999, which produced $245 billion worth of chips. At present, plasma treatment technology has been widely used in the production of DRAMS, SRAIMS, MODFETS, thin insulated gate oxide layer and new photoelectric materials, such as silicon and germaniumalloy, high-temperature electronic materials (diamond or diamond-like carbon film), silicon carbide, cubic boron nitide and other materials and components.   The raw materials for semiconductor devices are crystalline silicon or amorphous thin films. The main process for producing A-SI :H is plasma chemical vapor deposition. Plasma chemical vapor deposition process is used to generate ionic components, and these ionic components participate in the reaction, so as to realize the deposition on the basement surface. Compared with traditional chemical vapor deposition (CVD) processes, plasma CVD processes can generate ionic components at temperatures far lower than those of conventional CVD processes, and can also modify films by ion bombardment. The precursor film of plasma chemical vapor deposition process is usually SH4 gas diluted by inert gas, and the reaction product is hydrogenated amorphous silicon film.   The application of plasma cleaning machine in deposition process can be divided into four steps. (1) The electron collision reaction between the electron and the reaction gas produces ions and free radicals; (2) The active ingredients are transmitted from the plasma to the base surface; (3) The active ingredients are deposited on the surface of the substrate by adsorption or physicochemical action; (4) The active ingredient or reaction product becomes the component of the deposition film. In the process of high density plasma chemical vapor deposition, deposition and etching are often carried out simultaneously. In this process, three main mechanisms are: plasma ion assisted deposition, argon ion sputtering and sputtering material redeposition. A high density plasma source (e.g., inductively coupled plasma (ICP), electron cyclotron resonance plasma (ECR), or helicon) was prepared by chemical vapor deposition (HDPCVD) to excite a mixture of gases containing silane, oxygen, and argon. With the base as the cathode, the high-energy positive ions in the plasma will be attracted to the crystal surface, and then the oxygen will react with silane to produce silane, and then the oxygen will be removed by argon ion sputtering.   There are two kinds of printing line platemaking techniques commonly used in semiconductor manufacturing, and they complement each other. One is to print the dielectric onto the metal surface, and the other is to insert the metal into the dielectric plate. The former is the ion etching (RIE) platemaking technique. The operation steps are as follows: (1) A metal layer with uniform thickness is deposited on the wafer surface; (2) Then evenly coat the surface with a layer of photosensitive polymer, namely photoresist; (3) The circuit pattern is transmitted to the photolithographic surface by optical means to change its solubility; (4) Remove the soluble part with a reactive etchant to form a mask layer; (5) Remove metal etching without mask layer protection; (6) The photoresist was removed by plasma removal; (7) Deposition passivation surface of silicon dioxide or silicon nitride.   The other is mosaicism, which is inspired by the ancient jewelry mosaicism, or Damascus mosaicism. The process requires that the grooves are etched in the dielectric plane, and then the grooves are filled with metal by metal deposition process, so as to embed the desired circuit in a plane. After being coated with an insulating layer, the next metal film can be reembedded.

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Circuit board plasma cleaner

Circuit board plasma cleaner

PCB, especially high density interconnection boards, need to be metallized through the holes, so that the electrical conduction between the layers can be realized through metallized holes. Laser hole or mechanical hole due to the local high temperature of drilling, drilling after the residual gel is often attached to the hole. In order to avoid quality problems in the subsequent process, it must be removed before the next process. At present, the removal of drilling pollution mainly involves wet processes, such as potassium permanganate method. Due to the difficulty of liquid entering the hole, the removal of drilling pollution is limited. As a dry cleaning method, plasma cleaning machine solves this problem well.   Principle of plasma cleaning:   A plasma, also known as the fourth state of matter, is an electrically neutral ionization mass. The plasma gas must have several conditions: a certain degree of vacuum; The selected gas is supplied with a certain degree of vacuum. Turn on the RF power and apply a high voltage electric field to the electrodes in the vacuum to ionize the gas between the electrodes, generating a glow and forming a plasma. The plasma cleaning process in printed circuit board can be divided into three stages. One is the process of adsorbed the generated gas phase substances containing free radicals, electrons and molecular plasmas on the surface of the contaminated solid. Secondly, the adsorbed groups are reacted with the molecules on the surface of dirty solid to form molecular products, which is the process of analyzing the generated molecular products into gas phase. The third is the process of separating the reaction residue from the plasma.   Plasma hole cleaning:   Plasma hole cleaning is the primary application of printed circuit board. Oxygen and tetrafluorocarbons are usually mixed as the gas source. In order to obtain better treatment effect, controlling the proportion of gas is the determinant of plasma activity.   Plasma surface activation:   PTFE(polytetrafluoro-ethylene) materials are mainly used in microwave plates. The general FR-4 multilayer plate hole metallization process is difficult to achieve, mainly because of the activation process before chemical copper deposition. The existing wet treatment method is to use naphthalene sodium complex treatment solution to make PTFE surface atoms in the pore eroded, so as to achieve the purpose of wetting the pore wall. It is difficult to synthesize, toxic, and has a short shelf life. Plasma processing is a dry process, which solves these problems well.   Plasma removal residue:   Plasma removal is a good choice in PCB production. In the process of image transfer, the printed circuit board after sticking the dry film needs to be developed for plasma etching to remove the copper area that does not need to be treated. The process is to use the developer to dissolve the dry film that is not exposed. In the subsequent etching process, the dry film copper surface that is not exposed is etched. In this development process, often because of the development cylinder nozzle pressure is not uniform and other reasons, local unexposed dry film can not be completely dissolved, forming residue. This is more likely to occur in fine wire fabrication, resulting in a short circuit after subsequent etching. The residue can be well removed by plasma treatment. In addition, when the circuit board is mounted, areas such as BGA need to have a clean copper surface, and the residual copper will affect the reliability of welding. It is proved that this method is feasible and achieves the purpose of plasma cleaning by using air as air source.   Plasma treatment process is a dry process, compared with the wet process has many advantages, these advantages are determined by the characteristics of plasma itself. The whole reactive neutral plasma from high voltage ionization has a high degree of activity, and can continuously react with the atoms on the surface of the material, so that the surface material is constantly excited into gas, volatilization, in order to achieve the purpose of cleaning. It has good practicability in the process of printed circuit board production and is a clean, environmental friendly and efficient cleaning method.   Atmospheric injection plasma cleaning machine has the advantages of high cost performance, simple and convenient installation, can be installed on the assembly line and automatic equipment. So atmospheric jet plasma cleaning machine has been the preferred use of most enterprises plasma surface treatment equipment processing circuit board, according to the nozzle can be rotating different, atmospheric jet plasma cleaning machine can be divided into direct jet atmospheric jet cleaning machine and atmospheric jet rotary plasma cleaning machine two types.

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