图片名称

NEWS

Popular Articles

Contact Us

图片名称
图片名称

Service Hotline

13632675935

CRF

TEL：13632675935

E-mail：shaobo@sfi-crf.com

Address: 1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

The effect of the oxidizing gas N2 on the conversion reaction under the action of plasma

The effect of the oxidizing gas N2 on the conversion reaction under the action of plasma

The effect of the oxidizing gas N2 on the conversion reaction under the action of plasma: Influence of energy density Ed (kJ/mol) on CH4 conversion reaction: CH4 conversion and C2 hydrocarbon yield gradually increased with the increase of energy density, which means increasing plasma injection power and decreasing feedstock in flow reactor The air flow is beneficial to improve the conversion rate of CH4 and the yield of C2. When the energy density is 2000 kJ/mol, the CH4 conversion and C2 hydrocarbon yield can reach 52.7% and 40.9%, respectively. The relationship between energy density and CH4 conversion and C2 hydrocarbon yield is approximately logarithmic. When the energy density is lower than 1000kJ/mol, the CH4 conversion rate and C2 hydrocarbon yield increase rapidly with the increase of energy density; when the energy density exceeds 1000kJ/mol, the CH4 conversion rate and C2 hydrocarbon yield increase rapidly with the increase of energy density slow. It shows that in this reaction, the increase of energy density does not mean that the energy efficiency increases, on the contrary, there is a downward trend. Therefore, from the perspective of energy efficiency, an appropriate energy density should be selected. The effect of N2 addition on the CH conversion reaction in plasma: As the N2 concentration in the feed gas increases, the CH4 conversion rate increases, indicating that the inert gas N2 is present. Conducive to CH4 conversion. The yield of C2 hydrocarbons increased slightly with the increase of N2 addition amount, and the carbon deposition on the reactor wall decreased slightly with the increase of N2 addition amount. However, compared with the effect of H2 on the methane dehydrogenation coupling reaction, under the same experimental conditions, the yield of C2 hydrocarbons is lower and the amount of carbon deposition is higher. From the emission spectrum of CH-N2 plasma, it can be found that the characteristic peak of N2 and the spectral peak of CH at 431 nm are in the wavelength range of 400-440 nm. Since the cleavage energy of the N-N bond of nitrogen molecules is as high as 9.76 eV, the possibility of forming N atoms in pulsed corona plasma is relatively small, so the active particles in the CH4-N2 plasma system are excited to free molecules and methyl groups. Based on the main. The effect of O2 addition on methane plasma conversion reaction under the plasma energy density of 629 kJ/mol: Methane conversion increases with the increase of O2 addition, but the yield of C2 hydrocarbons (mainly C2H2) increases with the increase of O2 addition. gradually decreased. The research on adding gas to the methane plasma system shows that the addition of H2 or N2 not only promotes the conversion of methane, but also helps to improve the yield of C2 hydrocarbon products. The addition of O2 can effectively promote methane conversion, but the yield of C2 hydrocarbon products decreases.

MORE +
The effect of plasma plasma energy density on C2H6 dehydrogenation reaction in H2 atmosphere

The effect of plasma plasma energy density on C2H6 dehydrogenation reaction in H2 atmosphere

The effect of plasma plasma energy density on C2H6 dehydrogenation reaction in H2 atmosphere: The effect of H2 addition on the C2H6 dehydrogenation reaction when the plasma energy density was 860 kJ/mol: with the increase of H2 concentration, the conversion rate of C2H6, the yields of C2H2, C2H4 and CH4 all increased, which indicated that the addition of H2 It is beneficial to the conversion of C2H6 and the generation of C2H2, C2H4 and CH4. The possible reasons for the above results are: on the one hand, due to its good thermal conductivity, hydrogen can transfer a large amount of heat and act as a diluent gas in ethane plasma; When the electron collides with the H2 molecule inelastically, the H2 molecule absorbs energy to break the HH bond and generate an active hydrogen atom. Active hydrogen atoms can abstract hydrogen from C2H6 to generate C2H5 radicals, which themselves generate H2. Further hydrogen abstraction by active hydrogen atoms and radical recombination reactions lead to the formation of C2H4 and C2H2. At the same time, the inelastic collision of C2H6 itself with high-energy electrons is more likely to lead to the breakage of its C-C bond, resulting in the formation of the middle base, which lays the foundation for the formation of CH4. Therefore, compared with pure C2H6 dehydrogenation under plasma plasma, the conversion rate of C2H6, the yields of C2H2, C2H4 and CH4 increased significantly with the increase of H2 concentration. One advantage of the force of adding H2 to C2H6 is that it inhibits the formation of carbon deposits. The effect of plasma plasma energy density on C2H6 dehydrogenation reaction in H2 atmosphere is shown in Table 3-2. With the increase of plasma injection power, the conversion rate of C2H6 increases rapidly. This is because when the plasma energy density increases, the electron energy and electron density in the plasma increase, and the high-energy electrons inelastically collide with H2. The probability increases, so the probability of generating active species increases, resulting in an increase in the conversion rate of C2H6, and an increase in the concentration of various CHx and C2Hx free radicals required for other products, which promotes the increase in the production of C2H4 and C2H2. When the plasma energy density is 860kJ/mol, the ethane conversion rate can reach 59.2%, and the sum of the ethylene and acetylene yields can reach 37.9%. But at the same time, it should be noted that with the increase of plasma energy density, the selectivity to generate C2H4 and C2H2 gradually decreases, and more carbon deposits are generated on the reactor wall. In order to obtain higher energy efficiency, the appropriate plasma energy density should be selected, rather than the higher the energy density, the better. Table 3-2 Effect of plasma energy density on C2H6 reaction in H2 atmosphere Ed/(kJ/mol) XC2H6/% YCH4/% YC2H4/% YC2H2/% 320 37.6 2.6 3.7 10.6 640 45.2 6.1 8.7 21.2 860 59.2 7.0 9.2 28.7 1000 61.6 7.9 9.6 34.6 Note: The reaction conditions are C2H6/H2=2

MORE +
The advantages of plasma spraying equipment plasma surface treatment PET plastic sprayin

The advantages of plasma spraying equipment plasma surface treatment PET plastic sprayin

The advantages of plasma spraying equipment plasma surface treatment PET plastic spraying: The PET plastic pre-spraying plasma surface treatment equipment mainly provides pre-treatment for bonding, coating, sputtering and other processes in the digital industry. PET plastic plasma spraying equipment is widely used in digital products for mobile phone casings, mobile phone buttons, notebook computer casings, notebook keyboards, plastic products, etc. Widely used raw materials for printing, coating and bonding of polyethylene, polypropylene, polyvinyl chloride, polyester, polyoxymethylene, PTFE, vinyl, nylon, (silicon) rubber, plexiglass, ABS and other plastics Surface pretreatment of other processes. The materials suitable for plasma spraying equipment plasma are polypropylene (PP), polyethylene (PE), polyvinyl chloride (PVC), polystyrene (PS), high impact polystyrene (HIPS), ABS, PC , EPDM, polyester (PET, APET), polyurethane (PUL), polyoxymethylene, polytetrafluoroethylene, vinyl, nylon, (silicon) rubber, glass, plexiglass and other polymer materials and glass, ceramics. After treatment, the surface adhesion of the material is usually 55~80 dynes/cm. The shape, width, height, material type, process type, and need for online processing of these materials all directly affect and determine the solution of the entire surface treatment equipment. Plasma, the plasma surface treatment equipment before PET plastic spraying, is also called plasma spraying equipment, plasma surface grinding machine, plasma processor, etc. The plasma surface treatment equipment before PET plastic spraying can clean, activate and coat the surface of various materials to achieve the effect of thorough cleaning or modification without damaging the surface of the object. The advantages of plasma spraying equipment surface treatment PET plastic spraying: The plasma action process is a gas-solid phase dry reaction, which does not consume water resources, does not need to add chemicals, and does not pollute the environment. Adjustable plasma power, processing distance, cleaning speed for quality control. Close to normal temperature, especially suitable for polymer materials, with longer storage time and higher surface tension than corona and flame methods. There is no limit to the geometry of the objects to be processed, large or small, simple or complex, parts or textiles.

MORE +
Effect of CeO2CO2 loading on ethane conversion reaction under plasma plasma

Effect of CeO2CO2 loading on ethane conversion reaction under plasma plasma

Effect of CeO2CO2 loading on ethane conversion reaction under plasma plasma: Effect of CeO2 loading on ethane conversion reaction under plasma plasma: When CeO2 loading increased from 0 to 10%, C2H6 conversion increased from 33.8% to 42.4%, but further increased CeO2 loading, C2H6 conversion slightly increased There is a decrease. On the contrary, the CO2 conversion decreased with the increase of CeO2 loading. When the CeO2 loading was increased from 0 to 10%, the total yield of C2H4 and C2H2 increased from 12.7% to 21.8%. Therefore, it is necessary to study the conversion reaction of ethane under the combined action of 10% CeO2/Y-Al2O3 and plasma.  Plasma plasma 10%CeO2/Y-Al2O3, the effect of CO2 addition on the ethane conversion reaction under the combined action: With the increase of CO2 addition, the ethane conversion rate increases monotonically, which indicates that the addition of CO2 is beneficial to ethane conversion. In the plasma catalytic reaction, C2H6 molecules first inelastically collide with high-energy electrons to generate active species such as CH3 and C2H5. Since the bond energy of the CH3-CH3 bond is 3.8eV and the bond energy of the CH3CH2-H bond is 4.2eV (the average energy of the electrons in the plasma is 6eV), the C2H6 molecule dissociates under the action of the plasma as follows: C2H6 + e* → CH3 + CH3 + e (3-38) C2H6 + e* → C2H5 + H + e (3-39) Similarly, the inelastic collision of CO2 molecules with high-energy electrons causes the C-O bond to break, generating reactive oxygen species: CO2 + e* → CO + O- (3-40) CO2 + e* → CO + O +e (3-41) The inelastic collision of reactive oxygen species and C2H6 molecules will eventually generate C2H4 and C2H2: C2H6+0 →C2H4+H2O C2H6+O- →C2H4+H2O+e (3-42) C2H6+2O→C2H4+H2O C2H6+2O-→C2H2+2H2O+2e (3-43) Therefore, as the amount of CO2 added to the reaction system increases, more oxygen species react with ethane to generate ethylene and acetylene.

MORE +
The application of plasma surface cleaning technology in the field of IC packaging will become more and more extensive

The application of plasma surface cleaning technology in the field of IC packaging will become more and more extensive

The application of plasma surface cleaning technology in the field of IC packaging will become more and more extensive: The current cleaning of electronic components is mainly plasma cleaning. Traditional electronic components are cleaned by wet method, and some components on the circuit board, such as crystal oscillators, have metal shells. After cleaning, it is difficult to dry the moisture inside the components. The water and other manual cleaning, the smell is big, the cleaning efficiency is low, and the labor cost is wasted.        Integrated circuits, or IC chips, are the complex building blocks of today's electronics. Modern IC chips include integrated circuits printed on a wafer and attached to a "package" that contains electrical connections to a printed circuit board on which the IC chip is soldered. Packaging for IC chips also provides head transfer away from the wafer and, in some cases, a lead frame around the wafer itself. When an IC chip includes a lead frame, the electrical connections on the die are bonded to pads on the lead frame, which is then soldered to the package.        In the field of IC chip manufacturing, plasma treatment technology has become an irreplaceable mature process, whether it is in the implantation of chip source ions, or the coating of wafers, or what our low-temperature plasma surface treatment equipment can achieve: Ultra-purification treatment and surface activation to remove oxide film, organic matter, and masking on the surface of the wafer improve the wettability of the wafer surface.

MORE +
Research on the conversion of propane and butane under the action of plasma

Research on the conversion of propane and butane under the action of plasma

Research on the conversion of propane and butane under the action of plasma: Propane is the main component of natural gas, oilfield gas and refinery gas. Propane is a saturated alkane, and its economic value is low when it is directly utilized. However, propylene has a large gap, so it is necessary to study the olefination of propane. my country has abundant natural gas and petroleum resources. With their continuous development and utilization, propane in natural gas, oil field gas and refinery gas has increased sharply. Therefore, the development of propane production of propylene technology is of great importance for the rational use of propane and the development of new sources of propylene. Significance. At present, there are three main ways of propane dehydrogenation: propane high temperature steam cracking, propane catalytic deradon and propane oxidative dehydrogenation. The propylene yield of propane high temperature steam cracking dehydrogenation is too low, and the propane conversion rate of propane catalytic dehydrogenation reaction is too low; propane oxidative dehydrogenation can break the thermodynamic barrier of the reaction, and theoretically can obtain higher selectivity and yield. Rate. The current oxidants are mainly O2 and CO2. O2 is used as an oxidant for oxidative dehydrogenation. Due to the high activity of oxygen, there are many by-products. The selectivity of propylene is low, and the milder oxidant CO2 is often used, which can make full use of abundant The CO2 resource can reduce environmental pollution, so it has received more attention in recent years. Coupling the reverse water gas shift reaction with the direct dehydrogenation of propane, that is, using CO2 as the oxidant to oxidize propane to propylene, on the one hand, the thermodynamic equilibrium of the direct dehydrogenation of propane can be shifted, and it is possible to obtain higher olefin selectivity; Therefore, it has a strong application prospect because of CO2 that causes the global greenhouse effect. But the important problem at present is to find a suitable catalyst to make the reaction of CO2 oxidation of C3H8 better. The main product of propane under the action of pure plasma is C2H2 propane conversion and C2H2 yield increase with the increase of plasma energy density. The active species detected by 0ES online are mainly H and methyl radicals, indicating that the C-C bond is mainly broken in propane in the plasma, followed by the C-H bond. The main product of propane under the combined action of plasma and Ce4.34-Ni2.75-Zn-O/Y-Al2O3 catalyst is still acetylene, but a small amount of propylene is generated, indicating that plasma activation plays a leading role in this reaction, while Ce4 The .34-Ni2.75-Zn-O/Y-Al2O3 catalyst only plays the role of modulation. The main product of n-butane under the action of pure plasma plasma is C2H2, which is because the bond energy of CC bond is lower than that of CH bond. Under the action of atmospheric plasma plasma, the CC bond is preferentially broken to form CHx active species, which further reacts C2H2 is preferentially generated.

MORE +
< 1...383940...44 > proceed page
图片名称

CRF

National Service Hotline

136 3267 5935

Contact Email

shaobo@sfi-crf.com

Address:1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

图片名称

Add WeChat
Get related information

Links

Apply to exchange friend links

Copyright © Shenzhen Chengfeng Smart Co.

京ICP备10002622号-38

粤公网安备 44030602005200号

图片名称

Cheng Feng Zhi Zuang a focus on plasma research and development for 20 years

We

The services of

Inquire for free sample testing

1-to-1 program customization

24-hour online after-sales service

Source manufacturer

Get the program
%{tishi_zhanwei}%
图片名称

Scan the code for information

诚峰智造