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Use of semiconductor plasma cleaning equipment in semiconductor wafer industry

Use of semiconductor plasma cleaning equipment in semiconductor wafer industry

In the semiconductor industry chain, plasma cleaning equipment is an important link, it applies to raw materials and semi-finished products on every step possible impurity cleaning, in order to avoid impurity affecting the product quality and the performance of the downstream products, plasma cleaning equipment for monocrystalline silicon production, lithography, etching, deposition and other key process and packaging process of using are indispensable.   There are two cleaning technologies commonly used: wet cleaning and dry cleaning. At present, wet cleaning is still the mainstream in the industry, accounting for more than 90% of the cleaning steps. Wet production is to spray, scrub, etch and dissolve silicon wafers with chemical solvents to make the impurities on the surface react with the solvent to produce soluble substances and gases or fall off directly. Then, ultra-pure water is used to clean the surface of silicon wafers to make them dry and meet the requirements of cleanliness. In order to improve the cleaning effect of silicon chip, ultrasonic, heating, vacuum and other auxiliary technologies can be used. Wet cleaning includes pure solution dipping, mechanical wiping, ultrasonic/Meg cleaning, rotating spray, etc. Relatively speaking, dry cleaning refers to the cleaning technology that does not depend on chemical agents, including plasma cleaning, gas phase cleaning, beam cleaning, etc.   Due to the different technology and application conditions, there are obvious differences in the semiconductor cleaning equipment in the market. At present, the main cleaning equipment in the market is single wafer cleaning equipment, automatic cleaning table and washing machine equipment. From the 21st century to now, to single wafer cleaning equipment, automatic cleaning table, washing machine as the main cleaning equipment.   Semiconductor single wafer cleaning equipment is a kind of equipment that USES rotary spray to clean single wafer by chemical spray. Compared with automatic cleaning equipment, the cleaning efficiency is lower, but it has extremely high treatment environment control ability and particle removal ability. Automatic cleaning table, also known as slot automatic cleaning equipment, refers to the equipment cleaning multiple wafers at one time. Its advantage is strong cleaning ability, suitable for mass production, but can not reach the cleaning precision of single piece of cleaning equipment, it is difficult to meet the current technical advanced requirements of the whole process parameters. And because many pieces are cleaned at the same time, the automatic cleaning table cannot avoid the disadvantage of cross contamination. The washer adopts rotary spray, with mechanical wiping, high pressure, soft spray and other adjustable modes, suitable for deionized water cleaning process, including saw wafer, wafer wafer thinning, polishing, CVD, etc., especially plays an important role in the cleaning after wafer polishing.   There is no significant difference between the single wafer cleaning equipment and the automatic cleaning platform device in the use process. The main difference lies in the cleaning method and precision requirements, and the key dividing point lies in the semiconductor 45 nanometer process. In short, the automatic cleaning platform is multi-chip simultaneous cleaning, which has the advantage of mature equipment and high productivity, while the single-chip cleaning equipment is piece-by-piece cleaning, which has the advantage of high cleaning accuracy, can effectively clean the back side, slope and edge, while avoiding cross contamination between wafers. Before 45nm, the automatic cleaning table can meet the cleaning requirements. When it is below 45nm, the cleaning precision is achieved by relying on the single wafer cleaning equipment. With the number of post-semiconductor process nodes decreasing, single wafer cleaning equipment has become the main cleaning equipment under the predictable technology.   Process points reduce extrusion yield and increase the demand for cleaning equipment. Due to the reduction of process nodes, economic benefits require semiconductor enterprises to make continuous breakthroughs in cleaning technology and improve the requirements of cleaning equipment process parameters. Effective non-destructive cleaning will be a major challenge for manufacturers, especially for 10nm chips, 7nm chips and even smaller chips. To popularize Moore's Law, chip makers must be able to eliminate not only small, random defects on flat wafer surfaces, but also to adapt to more complex, fine-grained 3D chip structures that do not cause damage or material loss.

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Definition of Plasma Bunting

Definition of Plasma Bunting

Plasma bundling is a process of surface modification so that it can be combined or printed. Often used in PTFE, rubber or plastic, this process actually changes the surface, leaving free radicals and allowing any material to bond reliably to glue or ink water.   The shift register is bound during assembly. Printing on bright surfaces (such as plastic or PTFE) results in poor surface quality, and large amounts of ink do not adhere to the surface. This situation will lead to confusion in printing and subsequent processing of the product. Similarly, sticking a strong plastic handle to a shiny plastic product is difficult because different polymers require very different adhesives.   The surface modification effect is not permanent, and the processing time can vary from several hours to several days depending on the storage conditions of the processed parts. Although the effects of plasma bonding are temporary, the treatment allows sufficient time to complete the processing or printing of these materials. This method is used to bond different surfaces (such as plastic and metal or rubber and plastic), and different surfaces often require different glues, making it difficult to find the right adhesives.   Plasmas are used to modify the surface, so that the plastic or rubber hole can be combined with the adhesive, and the strength can be improved significantly. Plastic has a glossy surface, usually treated or glued to another material, such as a plastic or metal handle. If the smooth surfaces are treated with the right plasma, they can be printed without a smear, or they can be stuck to the handle without having to worry about gluing.   Plasma treatment is very safe and environmentally friendly. By combining power setting and pressurized plasma, only the surface of the material can be changed without changing the properties of the material itself. The plasma binding effect was observed in the deep regions with only a few molecular layers, while the overall properties of the material remained unchanged. This method does not use any stimulant chemicals, thus eliminating chemical safety risks for employees and the environment.

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Surface treatment of PCB board in atmospheric plasma cleaning machine

Surface treatment of PCB board in atmospheric plasma cleaning machine

Atmospheric plasma has been used for many years, and before the next conversion operation, the surface cleaning and functionalization of the substrate and the benefits of plasma treatment are fully recognized, reducing surface morphology degradation, increasing treatment (Dyne) levels, and eliminating negative treatment. Due to the complexity, low speed and high cost of vacuum plasma systems, production requirements are sometimes not met. The atmospheric plasma cleaner, on the other hand, enables PCB substrates to be cleaned on a continuous coil treatment system, just like corona treatment system. Atmospheric plasmas can be treated with different reactive gases and have been successfully tested on metals, films, paper, foams and powders. In addition, according to cleaning requirements and material types, the reel-to-reel processing speed can exceed the current VACUUM processing speed of PCB. Atmospheric plasma cleaning machine for circuit board manufacturing industry provides a special solution, that is, without damaging the sensitive surface to remove the residual pollutants, so as to increase production. Application of atmospheric plasma technology in the manufacture of plasma PCB to improve the processing speed of sheet and coil.   Atmospheric plasma treatment:   When ionized gas is used to treat polymer films, there are three main effects on their surfaces:   Electron bombardment: Electrons produced by plasma electric fields are distributed over the surface of a material at high energies and velocities. This causes the upper chain of the treated material to break, resulting in cross-linking, thus strengthening the material.   Ion bombardment: Ions generated in the plasma electric field are distributed at different energies and velocities on the polymer surface, which will lead to etching and sputtering, thus cleaning the surface substrate and effectively reducing the molecular weight structure.   Gaseous excitation: Ionization of a gas also means that there are many exciting substances in the gas. These stimulated substances, using an appropriate mixture of gases, react with the surface to produce functional groups such as hydroxyl (-OH), carbonyl (-C=O), carboxyl (-COOH), or amino (NHx), which are highly polar and can alter the surface alkali/acid interactions.   Atmospheric plasma glow discharge can be used as an etching process to remove borehole smear and pitting. De-drilling refers to the removal of the epoxy resin from the hole tube, including grease that may be coated on the copper contact surface during drilling. If contaminants are not removed from the surface of the copper sheet, they may interfere with the connection to non-plated copper plated in the plating holes. With the improvement of the property of decontination chemicals, most specifications of standard materials are less relaxed, mainly to remove a large amount of epoxy resin and glass fiber, so that the copper interface protrudes into the hole. The protruding copper surface allows large surface areas to be used to interconnect with subsequent copper coatings, and the exposed epoxy surfaces can be removed during drilling to avoid being daubed.   Atmospheric plasma is used to remove the photoresist residue that may remain after the circuit forms a long distance between the panel and the inner layer. Humidification is used to remove the photoresist from the outer layer, usually in the same bath or spray chamber as the inner layer. Although corrosion resistant stripping is a single tank operation, both the developer and stripper have a short cleaning life (usually in hours), and these operations produce a large amount of waste liquid treatment liquid that can be significantly reduced by treatment with an atmospheric plasma cleaner.

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Plasma etching contact hole

Plasma etching contact hole

The contact hole plays an important role in the manufacturing of integrated circuit, connecting the front part and the back part of the metal interconnection. Due to the contact hole layer plays the key role in integrated circuits, in the contact hole plasma etching process, technology integration for key contact hole size, size uniformity, contact hole wall shape control, as well as the contact hole plasma etching process selectivity of the etch stop layer, the consumption of metal silicides, contact hole height uniformity and ensure contact hole opened all the requirements of more and more strict, especially for the improvement of yield is becoming more and more important.   In the Contact hole technology integrated development course, two important milestone is 65 nm node start using NiSi (metal nickel silicide) instead of before CoSi (cobalt metal silicides) as the Contact metal in order to reduce the Contact resistance, reduce the signal delay, and node from 45 nm technology began to use the high stress of silicon nitride material to improve the performance of the device and as a Contact hole Etch Stop Layer (Contact Etch Stop Layer, CESL). With the development of contact hole etching technology, the 65nm/55nm technology nodes were all silicon oxide etching with photoresist mask before, the step sequence of contact hole etching at 90nm is to remove the photoresist first and then open the contact hole stop layer, while the step sequence of contact hole stop layer is to use the first etching to remove the photoresist at 65nm/55nm. Due to the key size requirements of 90nm and 65nm/55nm devices, there is little need for etching process to shrink the size of contact holes.   When the key size of the logic circuit is reduced to 45nm/40nm and more advanced process technology nodes, due to the limitations of lithography, process integration usually requires the key size after contact hole etching to be reduced by about 40nm(dimension deviation) compared to the pre-etching size, and multi-layer mask etching technique is started. Such a large reduction in size in the contact hole etching process presents a challenge to ensure the opening of the contact hole in the case of high aspect ratio. The size deviation is usually achieved mainly through the polymer rich etching process. However, the polymer-rich etching process tends to reduce the process window to ensure good opening of contact holes, control the shape of side wall of contact holes with high aspect ratio and good size uniformity, all of which are exactly the requirements of the etching process proposed by the process integration to achieve more stringent electrical characteristics. In addition, lithography requires thinner and less undeveloped photoresist for graphic exposure. These requirements increase the selectivity of contact hole etching for photoresist, so as to prevent the roundness of contact hole from becoming worse.   Therefore, in order to better transfer graphics, 45nm/40nm began to use multi-layer mask technology of Organic spin coating (Organic under Layer, Si BARC and photoresist in order from bottom to top). When it develops to the 28NM technology, I begin to use the multi-layer mask technology of advanced graphic material (Amorphous Carbon), Hard mask anti-reflection layer (DARC) and Photoresist from the bottom to the top). Among them, organic spin-coated multi-layer mask technology USES spin-coated hydrocarbon polymers and organic material anti-reflection layer is silicon-based hydrocarbon polymers. Both of them are liquid and need to be baked into solid mask at low temperature, so they are called soft mask technology, which is integrated on the photolithography machine and has a very fast process. The advanced graphic material multi-layer mask is the chemical vapor deposition of advanced graphic material (amorphous carbon film) and dielectric material (such as silicon nitrous oxide) film as the anti-reflection layer, so it is also called hard mask technology. Because of the hard mask technology used in the nitrogen oxide silicon material thickness is very thin, soft mask technology is just the thickness of the organic material anti reflector l / 2 or a third, because of this, for passing graphic required for the thickness of photoresist can also be greatly reduced, so that you can significantly increases the graphic show shadow precision of lithography process, to reduce the noise influence and improve safety process window; At the same time, advanced graphics material mask layer technology also has a higher ability of contact hole size shrinkage and make different contact hole roundness, thus, advanced graphics multi-layer mask technology can better transfer graphics, it has excellent process integration process window, are widely used in the forefront of logic integrated circuit manufacturing process.

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Application of plasma surface treatment machine on printing adhesion

Application of plasma surface treatment machine on printing adhesion

Flexible packaging is undergoing a technological revolution to improve consumer convenience and convenience, and to provide new solutions to a range of challenges throughout the production and distribution chain. High-performance film structures, packaging structures and applications, as well as printing technologies, will continue to bring flexible packaging to existing and new markets. Although traditional corona and flame surface pretreatment methods have been commonly used for flexible packaging of finished products, which are mainly used for drawing the packaging structure and strengthening the coating, atmospheric plasma surface treatment technology can also improve the adhesive ability of flexible packaging.   The atmospheric plasma treatment process has been developed for the treatment/functionalization of various materials and has its unique advantages over corona, flame and primer treatments currently used in flexible packaging applications. Atmospheric plasma surface treatment systems can produce uniform high density plasma using large amounts of inert and reactive gases at atmospheric pressure and low temperature. Atmospheric plasma treatment is similar to vacuum plasma treatment and can be used for surface functionalization of materials. APT production equipment testing has been successfully applied to the treatment of polypropylene, polyethylene, polyester and other materials. The surface energy of the processed material (without any backside treatment or pinhole) can be greatly increased, thus improving its wettability, printability and adhesion.   The atmospheric plasma surface treatment process involves contacting the polymer in a low temperature, high density glow discharge. A plasma is a partially ionized gas that contains a large number of excited atoms, molecules, ions, and free radicals. The gas molecules are excited by introducing the gas (transported in an open design) into an electric field (usually at high frequencies). Under the action of high-frequency electric field, free electrons generate energy, collision with neutral gas molecules and transfer energy, causing them to dissociate, forming many active substances. The surface of the excited material interacts with the solid surface of the plasma to modify the surface chemically and physically. The effect of a plasma on a particular substance depends on the chemical reaction between the surface and the reactants in the plasma. When the contact energy is low, the interaction between plasma and surface can only change the surface of the material. The influence is limited to the depth region of several molecular layers without changing the volume characteristics of the substrate.   The changes caused by the surface depend on the surface composition and the gases used. Gases or mixtures used to treat polymer plasmas include nitrogen, argon, oxygen, nitrous oxide, methane, ammonia and other substances. Each gas produces a unique plasma composition and different surface properties. Such as plasma induced oxidation, nitrification, hydrolysis or amination, the surface can be rapidly and effectively improved. Based on the chemical properties of the polymer, replacing a portion of the molecule after a surface contact reaction makes the polymer moist. Regardless of the gas composition, the surface treatment can alter the flexible packaging substrate to a degree that depends on chemical and process variables: ablation, crosslinking, and activation. High-energy particles (i.e., free radicals, electrons and ions) bombade the polymer surface and break the covalent bonds of the polymer backbone, thus forming a polymer chain with lower molecular weight. When the long molecular components become short, volatile oligomers and monomer by-products will evaporate (ablative) and excrete out. Crosslinking with an inert working gas (argon or helium), a bond fracture occurs on the polymer surface. But since there is no free radical scavenger, it can connect to nearby free radicals in a different chain (cross-linking).   Atmospheric plasmas with high density under atmospheric pressure contain high active substances, which can obviously increase the surface area and form polar groups on the polymer surface, thus making the matrix and its interface (such as ink, paint, adhesive) produce strong covalent bonding. By using atmospheric plasma surface treatment, water-based ink on polyester base structure can be used to improve the adhesion of ink.

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Silicon carbide oxygen plasma surface treatment

Silicon carbide oxygen plasma surface treatment

Compared with other high temperature materials, silicon carbide has lower average thermal expansion coefficient, higher thermal conductivity and better ultra-high temperature resistance performance, so it has a broad application prospect in high frequency, high power, high temperature resistance, radiation resistance semiconductor devices and ULTRAVIOLET detectors. Bonding is a very important step in silicon carbide micromachining and MEMS technology, and also one of the difficult problems in manufacturing industry. As for the direct bonding of silicon carbide, the problems of mismatching of thermal expansion coefficient and electrical properties when different materials are connected under high temperature environment are solved, and the isomer of silicon carbide can be directly combined together to form heterojunction devices. Heterojunction has many advantages over homogeneous junction. For example, compared with schottky transistors, heterojunction fET can obtain lower leakage current. Heterojunction bipolar transistors can improve emission efficiency, reduce base resistance, improve frequency response, and have a wide operating temperature range.   Among them, the surface treatment is a key factor in the direct bonding and its treatment effect is good or bad will directly affect the bonding can occur, and the interface effect, after the bonding because pollutants adsorption on the chip surface, the wafer surface roughness, etc., will cause the bonding hole, and the mechanical properties and electrical properties of the chip surface varying degrees of impact. At present, the surface treatment methods of silicon carbide mainly include traditional wet treatment, high temperature annealing and plasma treatment. The traditional wet washing treatment is developed from the wet process of silicon, which mainly includes HF method and RCA method, each of which has its own characteristics. For example, the wet treatment steps are simple, but the results include pollutants like C, O, and F; High temperature treatment can effectively remove C and O pollutants, but the treatment temperature needs to be further optimized and the subsequent process compatibility is poor. Plasma treatment can effectively remove pollutants containing O and F, but improper treatment temperature and time will lead to ion damage to the surface, resulting in surface reconstruction of silicon carbide. According to the characteristics of the above surface treatment methods, the wafers were treated by wet cleaning, oxygen and argon plasma treatment, and the wafers were bonded directly with silicon carbide melting point at low temperature and low pressure by hot pressing method, and the ideal bonding effect was achieved.   Plasma surface treatment equipment treatment: further treatment of plasma in practical applications can reduce the roughness of the chip, increase the activation degree of the chip, and obtain more suitable for direct bonding. It can be seen from the theory of binding to solid surface that when there are a lot of unsaturated bonds on the surface of the chip, the foreign is easy to bond to it. The surface hydrophilicity and adsorption properties of the chip can be changed by plasma treatment. Plasma surface excitation technology only changes the surface layer of the chip, but does not change the mechanical, electrical and mechanical properties of the material itself. The plasma treatment method has the characteristics of no pollution, simple process, fast speed and high efficiency. After many experiments, specific schemes of oxygen and argon treatment were obtained, and they were successfully applied in the subsequent bonding process. Oxygen and argon are polymerized gas, plasma interacts with silicon dioxide layer on the surface of the wafer, the activity of these atoms and high energy electron destroyed the original si-o bond structure, make it a key bridge, surface activation energy and leads to the electronic combination of excited atoms and can move to a higher, make its surface there are a lot of hanging key, and these key overhang and combined with OH groups form, form a stable structure. After the surface of SI-OH is soaked in organic or inorganic alkali and anneal at a certain temperature, the bonding bond is dehydrated and polymerized to form silicon-oxygen bond, which enhances the surface hydrophilicity of the chip and is more conducive to the bonding of the chip. The hydrophilic wafer surface is superior to the hydrophobic wafer surface in spontaneous bonding.

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