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The influence of plasma etching on PID

The influence of plasma etching on PID

Plasmae Induced Damage (PID) refers to the performance deviation of MOSFET devices caused by various plasma processes in integrated circuit manufacturing. In the plasma environment, due to the discharge of a large number of ions and electrons, ions are accelerated and move towards the surface of the wafer due to the action of electrode potential or plasma self-bias, they have physical bombardment to the substrate and promote the chemical reaction on the surface. These ions and electronic currents are collected by the metal exposed to the plasma, which accumulates at the gate electrode of polycrystalline silicon or aluminum. At this time, the metal layer acts as an "antenna". The gate oxide layer can be regarded as a capacitor. Under the action of FN current, the gate oxide layer and interface will produce defects, the resulting damage will lead to the reduction of IC yield, and will accelerate the degradation of hot carrier and TDDB effect, causing long-term reliability problems of devices. The degradation of gate oxide layer caused by charging effect is a serious problem in IC fabrication. There are several main mechanisms causing PID: (1) Plasma density. Higher plasma density means higher current Under the charge-induced damage model, higher plasma density is more likely to cause PID problems. Krishnan et al. found that when the height of ICP metal etching reaction chamber was reduced from 8cm to 5cm, the electric field intensity on the wafer surface was significantly enhanced. The increase of plasma density leads to charge charging, which causes serious device damage. (2) Local inhomogeneity of plasma. In a uniform plasma, ion and electron currents balance in one RF cycle, so the gate oxide potential is very small, but in an inhomogeneous plasma, the potential imbalance in a local range will generate current paths on the surface of the wafer, which will cause the gate oxide damage. (3) Eletron Shading Effect. Electrons in plasma have worse directionality than ions, that is, the incidence Angle distribution of electrons is larger than that of ions, which is easier to be blocked by photoresistance. The positive ions gather in the front end of the etching to form the positive potential of the device. (4) Reverse Electron Shading Effect. ESE occurs in areas with dense patterns, such as patterns with spacing less than 0.5μm. On the contrary, in the open region of the pattern, such as the pattern spacing greater than 2μm, due to the isotropy of the electrons. Some of the electrons are collected by the side wall of the metal to be etched, while the ions are not, resulting in a negative charge accumulating on the side wall of the metal forming a negative potential against the device. (5) VUV Radiation. A large number of VUV photons are produced during plasma discharge, which causes photocurrent in the gate oxide layer and damages the device. Si3N4, which has a narrower band gap than Si3N4 at the top of the gate, can effectively absorb and block high-energy VUV, so as to protect the gate oxide layer from damage by VUV radiation. Studies have shown that when the Ratio of Antenna area to device size is larger, the damage of the device is more serious. Antenna ratios of different sizes can be designed to compare the damage degree of the device caused by different plasma processes. Generally, gate leakage current is used to characterize PID. Taking NMOS as an example, the greater the leakage current, the more serious the PID caused by positive charge. In circuit design, the influence of PID can be effectively inhibited by avoiding high antenna ratio, adopting metal jump layer or using protective diode to introduce charge into the substrate, and the antenna ratio that can be tolerated by the device can be improved by process optimization. Zhou et al. independently tested and analyzed the PID introduced in each layer metal manufacturing process to study the influence of various back-stage etching processes on PID. The dielectric etching of the metal layer charges the metal antenna of the contact hole, and the PID problem is generated when the antenna ratio of the contact hole is very small (e.g. 20), while the PID problem is generated when the antenna ratio of the high level metal is several thousand. The longer the over-etching time of metal layer is, the worse the PID will be. The higher the ratio of high frequency power to low frequency power is, the worse the PID will be. When the power supply is replaced with a higher frequency power supply, the more serious the PID problem will be, because the higher the power supply frequency is, the higher the plasma density is, the more serious the corresponding charge aggregation phenomenon is, so the worse the PID will be. However, the high frequency power is very important for the control of polymer by-products in etching, so the choice of frequency should be carefully weighed. For the passivation layer etching, the influen

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What is the material and structure of the electrode of the plasma cleaning machine

What is the material and structure of the electrode of the plasma cleaning machine

Electrode material and structure of plasma cleaning machine: In recent years, due to the practical application value of atmospheric pressure plasma technology in industrial production and its application prospect in various industries, the enthusiasm of scientists from all over the world has been aroused, and the theory and technology of atmospheric pressure plasma technology have been developed rapidly. The whole process of charging and discharging under atmospheric pressure of plasma cleaning machine has unique characteristics, so its application is different from that of vacuum. The material and structure of electrode of plasma technology under atmospheric pressure are discussed.   Definition of dielectric barrier charge and discharge:   Dielectric barrier charge and discharge (DBD) is a heterogeneous gas charge and discharge caused by the insertion of a dielectric material between metal electrodes.   Basic electrode structure of cleaning equipment or plasma plasma cleaning machine processing system:   In general, the electrodes are two parallel surface electrodes, at least one of which is covered by a dielectric material. In order to ensure the reliability of charge and discharge, the distance between the two electrodes is only millimeters, and sinusoidal alternating current or DC pulse high voltage power supply is needed to achieve atmospheric discharge. Depending on the discharge condition, the excitation operating voltage and frequency, the glow will form in the middle of the electrode. A single filamentous discharge is composed of surface microdischarge or discharge band. The formation of glow requires rare gases such as nitrogen and helium, which can produce metastable particles.   Another type of electrode structure is in which the discharge is generated between two dielectric material layers in direct contact with the metal electrode. The double layer discharge structure is used to avoid the direct contact between plasma and metal electrode, which makes the plasma more uniform and the discharge wire more fine. Suitable for corrosive gas separation and high purity plasma system.   The electrode structure of the third type of plasma cleaning machine is columnar. The key of making the low-temperature plasma torch and modifying the irregular surface layer is to make the columnar electrode and the columnar structure discharge system. Because the appearance of products and materials and the requirements of production and processing are different, so the design of plasma electrode is very important for the equipment.

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What are the factors affecting the coating uniformity of vacuum coating equipment

What are the factors affecting the coating uniformity of vacuum coating equipment

Vacuum coating is more complex, the uniformity of the thin film theory is: bao hou of symmetry can also understand for surface roughness on the limits of optical thin film (namely 1/10 light wavelength, about 100 a), vacuum coating proportions are very good, so the surface roughness can be easily controlled in visible wavelength of 1/10 category, in other words the vacuum technology strength is no problem for thin film coating. Unity on chemical composition: that is to say, in the film the chemicals of atoms is not large, easy to form the asymmetrical features, if the plating process is not reasonable, so the surface is not Sitio3, may be other chemical proportion, the plating is not ideal in the organic chemical composition, it is also a vacuum coating technology will encounter more difficult things. Lattice uniformity: this determines that the film is single crystal, polycrystal, amorphous, is a hot topic in vacuum electroplating technology. Vacuum deposition can be divided into two categories: evaporation deposition and sputtering deposition, including vacuum ion volatilization, magnetron sputtering, MBE molecular structure beam ductility, gel solution gel method, etc. The key to the uniformity of thin-thickness lies in: lattice matching degree of material and sputtering target, outer surface temperature, evaporation speed and power, vacuum degree, coating time and thickness degree. The symmetry of crystals is influenced by the following factors: lattice match, temperature, and rate of evaporation. For the sputtering coating, it can be simply understood as electronic devices or high-energy laser sputtering target material. The surface parts are splashed in the form of atomic clusters or ions and deposited on the surface of the substrate to produce thin films. Sputtering coatings are divided into several types, and the difference from evaporation coatings depending on the sputtering speed will become one of the main parameters. The composition of the film in the sputtering coating is easy to maintain, but the atomic uniformity is weak and the crystal direction control is general. The influencing factors are: target and substrate matching degree, low pressure coating atmosphere, substrate temperature, laser output power, pulse frequency, sputtering time. For sputtering and substrate of different materials, the appropriate parameters are not the same. The key to the quality of equipment is whether the temperature can be controlled, whether the vacuum value can be ensured, and whether the cleanliness of the vacuum chamber can be ensured. MBE molecular beam outer edge coating technology, this is a very good way to deal with this problem, the common coating equipment in industrial production is mainly ion evaporation coating and magnetron sputtering coating.

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How is the plasma formed in the plasma cleaning machine

How is the plasma formed in the plasma cleaning machine

Plasma cleaning machine can be generally divided into atmospheric (atmospheric pressure) plasma cleaning machine and vacuum (low pressure) plasma cleaning machine, equipment can be used to improve the adhesion and so on. The former discharges under normal pressure in open space or semi-closed state, while the latter requires vacuum to form low pressure to produce glow in fully closed space. No matter what form, the formation process of plasma is basically the same from the microscopic analysis. When material from low energy aggregation state into a high-energy aggregation state, from the external supply of energy (such as temperature, radiation, etc.), electric field, from solid to liquid or from liquid to gas, each particle needs 0.01 eV (1 eV = 1.6022 x 10-19 joules) of energy, when the gas absorbs energy from the outside, further further thermal motion of molecules, molecular dissociation into atoms, get enough energy of the electrons in atom, from electronic and become a free electron. Gas phase ionization, gas phase ionization contains a large number of electrons, ions, as well as some neutral particles (atoms and molecules), in which the number of charges of electrons and ions is almost equal, macroscopically or on average are neutral. Use water as an example: At temperatures below 0℃, water will appear to be a solid state, "ice"; At a temperature of 0℃ to 100℃, water will turn into a liquid, that is, "water"; At temperatures above 100℃, water changes into a gas, or steam. Heated to tens of thousands of degrees, matter will enter a fourth state - plasma! Atmosphere (atmospheric) plasma cleaning machine is a kind of anhydrous oil-free compressed air (CDA), and other gas formed by spraying a electrode plasma device, vacuum (low pressure) plasma cleaning machine is vacuum reaction chamber first, and then pass into the reaction gas, keep to a certain degree of vacuum in the electrode electricity, formation of high frequency high voltage electric field, inspire gas discharge device.

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DBD atmospheric pressure plasma cleaning machine supplier plasma introduction

DBD atmospheric pressure plasma cleaning machine supplier plasma introduction

Atmospheric pressure DBD plasma cleaning machine, refers to the equipment that can cause gas ionization and produce similar glow plasma at 1 standard atmospheric pressure or close to atmospheric pressure, also known as atmospheric pressure DBD plasma cleaning machine, quasi glow atmospheric DBD plasma cleaning machine. Quasi-glow discharge plasma is more stable and more uniform than filamentary discharge, and is more suitable for large area surface treatment of materials or products. 1. atmospheric pressure DBD plasma cleaning machine quasi-glow plasma: When glow discharge is formed at atmospheric pressure, a certain initial electron density must be reached. When the electron density to be ionized is large enough, a large area of glow discharge can be generated, so that the initial avalanche heads can overlap and merge with each other, and the electric field gradient of tangential space charge is relatively low. In the residual gas, the gas purity, gas adhesion, the existence of metastable state, electrons and ions have great influence on the gas ionization intensity. The residual particles in the first half cycle, that is, in addition to the memory charge on the surface of the dielectric, can also play a memory role in the whole discharge volume at an appropriate discharge frequency. In addition, the medium with special properties is also conducive to the generation of large area uniform plasma. A large amount of charge can accumulate on the surface of a dielectric. These charges can be uniformly bound to the surface of the medium under high pressure. In addition, when the electric field polarity changes and exceeds a certain threshold value, the charge will be repulsed from the surface and ignited to block the discharge at the same time under the high current density. For this high current, the peak current in each half of the current waveform lasts only a few nanoseconds; The duration of helium discharge and nitrogen discharge is 3 microseconds and 200 microseconds respectively under normal glow discharge conditions. 2.the average energy of electrons in the atmospheric pressure DBD plasma cleaning machine: In the application of plasma chemistry, electrons with higher energy are often required, and electrons with lower energy can only consume electric energy through vibration, which cannot meet the reaction conditions of chemical reaction. Therefore, improving the distribution of high-energy electrons in the discharge space is the key to obtain effective chemical reactions in plasma. According to the research, the average energy of electrons in DBD plasma is between 1~10eV. For dissociable and dissociable gas molecules, the electron energy higher than 10eV has a more significant effect on them, and the size of the electron energy is usually closely related to the discharge conditions such as electrode structure, power, frequency, etc. 3.atmospheric pressure DBD plasma cleaning machine plasma radiation: The process by which plasma emits electromagnetic waves is radiation. The plasma produced by gas discharge is often accompanied by luminescence, and its color is related to the type of reaction gas. In addition to emitting visible light, it can also produce ultraviolet, X - rays and so on, which are actually electromagnetic waves. The main source of plasma radiation is the change of motion state of particles in plasma, especially the more diversified motion state of electrons. In addition to the bound electron, there is a free electron whose kinetic energy can vary from time to time. When it collides with other particles or is affected by other external fields, the motion state will change, and the transition radiation will also occur with the change of energy state. In atmospheric pressure DBD plasma cleaning machine, the study of plasma radiation is very important. On the one hand, the plasma radiation will release energy, resulting in energy loss of the plasma. On the other hand, for some gas radiation, photoionization can be produced, which effectively activates the reaction system. On the other hand, the plasma radiation contains a lot of internal information of the plasma. Through research or time analysis, such as radiation frequency, radiation intensity, etc., the density, temperature and particle state of the plasma can be diagnosed, and the information about the chemical reaction process can be obtained. Under normal circumstances, atmospheric pressure DBD plasma cleaning machine neutron radiation process mainly has three stages, namely excitation radiation, composite radiation and isotope radiation, and atmospheric pressure DBD plasma cleaning machine electron temperature is only 1~10eV, therefore, in fact, the main role is the excitation radiation and composite radiation. Excited states refer to the radiation emitted by a highly excited particle in an excited atom when it transitions to a low excited s

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Plasma surface treatment equipment with increased adhesion

Plasma surface treatment equipment with increased adhesion

Low temperature plasma is to point to by air pressure low charge and discharge (glow, corona discharge, high frequency, etc.) caused by the ionized gas, under electrostatic field effect, free charge from electrostatic field in the gas kinetic energy, into a high energy electron devices, so this kind of material is how to make and so on ion surface treatment equipment can improve surface adhesion stick relay will explain to you. Such a high energy electron and gas in the molecular structure, molecular collision, the electron kinetic energy than molecular structure or molecules can provoke, will provoke molecular structure or provoke molecular oxygen free radical, cation, and have different kinetic energy radiation, they according to the ion bombardment or introducing polymer surface, cause off key or import functional group heterogeneity, which make the surface produces specificity, thus achieve the goal of modified materials. Surface active adhesion efficacy of plasma surface treatment equipment: 1. Under the effect of plasma, a part of specific molecules, oxygen free radicals and unsaturated bonds appeared on the surface of refractory plastics. This specific functional group contacted with the specific particles in the plasma, resulting in new specific functional groups. However, materials with specific functional groups will suffer from the effect of oxygen or the movement of molecular structure chains, which will cause the surface active functional groups to disappear. 2. When the plasma surface treatment equipment carries out surface modification of the material, the effect of the surface active particles on the surface molecular structure causes the unchain of the surface molecular structure, which leads to new specific functional groups such as oxygen free radicals and hydrocarbon groups, and then produces surface chemical crosslinking and polymerization. 3. Reactive plasma refers to that the specific particles in the plasma can produce chemical changes with the surface of the refractory raw materials, and then introduce a lot of functional groups, so that the surface of the material changes from non-polar to optical rotation, and the interfacial tension and viscosity are improved. 4. Under the high velocity impact of plasma, the chemical crosslinking of molecular structure unchaining occurs on the surface of the refractory material, which promotes the relative molecular weight of the surface molecular structure, improves the situation of the weak boundary layer, and has a positive effect on the improvement of the adhesion characteristics of the surface layer. The key reflecting plasma specific gases in plasma surface treatment equipment include 02, H2, NH3, CDA and other gases. Related plasma surface treatment equipment can improve the surface adhesion of the material is introduced to this, I hope to help you oh.

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