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Introduction of plasma surface activation cleaning treatment of glass cover plate

Introduction of plasma surface activation cleaning treatment of glass cover plate

Introduction of plasma surface activation cleaning treatment of glass cover plate: According to the requirements of the glass cover plate production line, plasma surface treatment equipment can be used to treat the products. The optional equipment includes: atmospheric plasma cleaning machine, wide-width linear plasma equipment, etc. The energy of the ions and electrons of the plasma can reach 6 eV or even higher. Its major feature is that the ejected plasma is neutral and has no charge. The surface of the treated material can be activated, cleaned and etched in-line. At atmospheric pressure, the plasma size of each nozzle is: diameter ranging from 15 to 90 mm, and nozzle length ranging from 20 to 30 mm. According to the product size and processing width requirements, the online processing glass cover plate plasma cleaning machine equipment can be flexibly selected. The principle of surface activation and cleaning treatment of glass cover plasma cleaning machine: Plasma is composed of a large number of free electrons and ions, and is an ionized gas that is close to neutrality on a macroscopic scale. It is another aggregation state of matter, that is, plasma state, that is, the fourth state of matter. The electrons in the plasma get energy from the electric field, transform into free high-energy electrons, collide with atoms and molecules in the gas, produce excitation and ionization, and generate excited molecules, while atoms, ions and free radicals are extremely unstable, chemical reactions It has strong properties and is prone to reactions that generally cannot occur, resulting in new compounds or weightlessness of the treated material. During processing, the surface layer is etched, resulting in new properties (eg, weight loss, moisture absorption, deepening, adhesion, etc.); or leading to cross-linking, grafting, and polymerization. Plasmas are very different from ordinary gases in their properties. The temperature of electrons in plasma can reach several thousand to tens of thousands of K, while the temperature of gas is very low, about hundreds of degrees Celsius at room temperature, and the energy of electrons is about a few to a dozen electron volts. This energy is greater than the bond energy of polymer materials (several to dozens of electron volts), and can completely break the chemical bonds of organic molecules, thereby generating new bond energy; however, it is much lower than high-energy rays, only with It is related to the surface of the material, so it does not affect the matrix properties. If you have any questions or want to know more, please feel free to consult Chengfeng Zhizao plasma technology manufacturer.

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Pipe and wire plasma cleaning machine surface treatment to improve the surface tension of non-polar plastics

Pipe and wire plasma cleaning machine surface treatment to improve the surface tension of non-polar plastics

Pipe and wire plasma cleaning machine surface treatment to improve the surface tension of non-polar plastics: The tube wire has a low surface tension, which can adhere well to the paint surface. Surface tension can be maximized in many cases (in fact all cases) to achieve the desired adhesion by using plasma cleaning machine surface treatments. Scenarios for plasma surface activation and cleaning of pipes and wires: The surface of the material is activated by plasma cleaning using an oxygen plasma cleaner and then the plastic wires are etched. This can increase their surface energy. When cleaning the pipe, it is important to increase the surface area, which promotes good bonding. Plasma surface cleaning and activation process: The effect of oxygen plasma on the surface tension of non-polar plastics is obvious. The reason is that, due to the high reactivity of oxygen radicals, polar bonds are formed, which constitute the adhesion points of the coating liquid. In this way, the surface tension is increased, wetting is accelerated and the adhesion is improved.

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Surface modification of bamboo powder/PETG composites by low temperature plasma treatment technology

Surface modification of bamboo powder/PETG composites by low temperature plasma treatment technology

Surface modification of bamboo powder/PETG composites by low temperature plasma treatment technology: Wood-plastic composite material is a composite material made of thermoplastics and bamboo fibers with a small amount of chemical additives and fillers and other auxiliary agents, through a special composite method, and has the dual characteristics of plastic and bamboo, that is, it has the following Advantages: good acid and alkali resistance, chemical resistance, salt water resistance, can be used at low temperature, UV resistance, no rot, no cracking or warping and other mechanical properties, low price, long service life, easy to shape, easy to process , recyclable, no formaldehyde and other harmful gas release, etc., has been widely used in automobile manufacturing, construction, transportation, packaging and other fields. However, due to the poor wettability and poor adhesion of the surface of the bamboo-plastic composite material, the bonding process on the surface is greatly affected. In order to improve the wettability of the material surface, the ideal modification method is low temperature plasma treatment technology. Plasma is an ionized gas-like substance", containing electrons, positive ions and neutral particles, a high-energy aggregate of various particles. Plasma is divided into high-temperature plasma and low-temperature plasma according to temperature. Usually, low temperature plasma Plasma treatment techniques are used for the modification of material surfaces. The energy of the active particles in the plasma of low temperature plasma treatment technology is generally close to or exceeds the bond energy of C-C or other carbon bonds, which will modify the surface of the composite material and cause complex physical and chemical changes on the surface of the material, such as Etching, cross-linking, etc. to improve the contact angle and surface energy of the polymer surface. The increase of plasma discharge power of low temperature plasma treatment technology increases the number of active particles in the plasma atmosphere, the energy increases, the etching effect of active particles on the surface of the sample is strengthened, the contact angle of the surface of the sample decreases, and the surface of the sample decreases. Wetting is improved. With the increase of the discharge power, the contact angle of the sample surface increases with the increase of the discharge power. As the treatment time increases, the thickness of the oxide layer increases and the polarity of the oxygen-containing functional groups increases. After low-temperature plasma treatment of the sample, the water absorption rate of the sample increases with the increase of the low-temperature plasma discharge power; after the low-temperature plasma treatment of the sample, the water absorption rate of the sample decreases with the increase of the low-temperature plasma discharge power . This is because after the low-temperature plasma treatment technology plasma treats the sample, increasing the low-temperature plasma discharge power will promote the conversion of inactive particles inside the low-temperature plasma into active particles with higher energy that are easy to participate in the reaction, which is beneficial to the low-temperature plasma. The reaction between the body and the surface of the sample increases the oxygen content on the surface of the sample, the number of polar oxygen-containing functional groups increases, and the water absorption rate increases. With the further increase of the power, the energy obtained by the active particles from the electric field increases, and the probability of the particles colliding with each other increases, resulting in the loss of particle energy and the weakening of the molecular interaction between the active particles and the sample surface, resulting in wetting. The relative decline of the property, the water absorption rate decreased. This is because with the increase of treatment time, the number of polar oxygen-containing functional groups introduced on the surface of the sample increases, and the surface polarity increases. Low-temperature plasma treatment technology After plasma treatment, the amount of -COC on the surface of the sample increases, but with the increase of low-temperature plasma treatment time, the amount of -COC on the surface gradually decreases. The oxide layer thickens, and the attractive -COC on the surface of the sample is further oxidized to -C=O.

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Chengfeng Zhizao Plasma introduces the importance of ethylene as a chemical raw material for industrial development

Chengfeng Zhizao Plasma introduces the importance of ethylene as a chemical raw material for industrial development

Chengfeng Zhizao Plasma introduces the importance of ethylene as a chemical raw material for industrial development: The mixed gas of methane and ethane widely exists in natural gas, oilfield gas, refinery gas and catalytic cracking gas, and the relative content of ethane is small. Separating and purifying methane and ethane and then utilizing them separately is costly. Without separation, directly using methane containing part of ethane as raw material to carry out the conversion reaction is a practical need from many occasions. The proven oil reserves in my country are 2.27×1017t and the natural gas reserves are 1.97×1021 m3. With the continuous development and utilization of the above resources, the amount of ethane in natural gas, oilfield gas, refinery gas and catalytic cracking gas will increase sharply. . Therefore, it is necessary to carry out the research on the ethane conversion reaction, which is of great significance for the rational utilization of ethane. As an important organic chemical raw material, ethylene is one of the symbols to measure the development level of a country's chemical industry. As we all know, the production of ethylene from ethane has always been one of the main processes of petrochemical industry. The traditional method is high-temperature cracking and dehydrogenation, which is a strong endothermic process. It not only requires high temperature (generally higher than 850 °C), but also needs to be carried out under negative pressure (adding a large amount of superheated steam for dilution), which consumes a lot of energy. , the operation is complicated, and the product separation is very difficult. If catalytic dehydrogenation is used, the reaction temperature can be lower than that of pyrolysis dehydrogenation, but it still has its limitations and is not sufficiently competitive. Moreover, with the continuous depletion of petroleum resources, the potential for preparing raw material ethylene from petroleum is nearly exhausted, and it is difficult to compete with petrochemicals economically from coal, and the oxidative dehydrogenation of gaseous alkanes is a realistic and effective way to fill this gap. way. Under the situation of increasingly tight energy supply, further efficient utilization of gaseous carbon resources has important strategic significance.

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Research on WAT method used in integrated circuit manufacturing in plasma CMOS process

Research on WAT method used in integrated circuit manufacturing in plasma CMOS process

Research on WAT method used in integrated circuit manufacturing in plasma CMOS process: WAT (Wafer Accept Test) is the silicon wafer acceptance test, which is to conduct electrical tests on various test structures on the silicon wafer after the semiconductor silicon wafer has completed all the manufacturing processes. It is a means of reflecting product quality. A quality inspection before products are put into storage. With the development of semiconductor technology, plasma technology has been widely used in the manufacture of integrated circuits. Ion implantation, dry etching, dry debonding, UV radiation, film deposition, etc. may introduce plasma damage. The WAT structure cannot be monitored and can lead to early failure of the device. Plasma processes are widely used in integrated circuit manufacturing, such as plasma etching, plasma enhanced chemical vapor deposition, ion implantation, and the like. It has the advantages of good directionality, fast reaction, low temperature and good uniformity. However, it also brings charge damage. As the thickness of the gate oxide layer continues to decrease, this damage will increasingly affect the reliability of the MOS device, because it can affect the fixed charge density and interface state density in the oxide layer. , flat-band voltage, leakage current and other parameters. Large-area ion-collecting regions (polycrystalline or metallic) with antenna device structures are typically located on thick field oxides, so only the tunneling current effects on thin gate oxides need to be considered. The large-area collection area is called the antenna, and the tunnel current amplification factor of the device with antenna is equal to the ratio of the area of ​​the collection area on the thick field oxide to the area of ​​the gate oxide area, which is called the antenna ratio. If the gate oxide area is small and the gate area is large, the ions collected by the large-area gate will flow to the small-area gate oxide area. In order to maintain charge balance, the tunnel current injected into the gate by the substrate also needs to follow Increase, the multiple of increase is the ratio of gate to gate oxide area, amplifying the damage effect, this phenomenon is called "antenna effect". In the case of gate implantation, the sum of the tunneling and ionic currents equals the total electron current in the plasma. Because the current is very large, even without the amplification effect of the antenna, as long as the field strength in the gate oxide can generate tunneling current, it will cause plasma damage. In normal circuit design, the gate terminal generally needs to be opened through polysilicon or metal interconnects to be the functional input terminal, which is equivalent to introducing an antenna structure on the weak gate oxide layer, so in normal tape-out and WAT monitoring The electrical test and data analysis of the single-tube device carried out at the time cannot reflect the actual plasma damage in the circuit. The oxide layer continues to be thinned to below 3nm, and the problem of charging damage is basically no longer considered, because for the oxide layer with a thickness of 3nm, the charge accumulation is directly tunneling through the barrier of the peroxide layer, and no charge defects will be formed in the oxide layer.

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The effect of CO2 addition on C2H6 dehydrogenation reaction under plasma plasma conditions

The effect of CO2 addition on C2H6 dehydrogenation reaction under plasma plasma conditions

The effect of CO2 addition on C2H6 dehydrogenation reaction under plasma plasma conditions: Influence of CO2 addition on C2H6 dehydrogenation under the plasma energy density of 800 kJ/mol: Compared with pure C2H6 dehydrogenation under plasma conditions, with the increase of CO2 addition in the system, the conversion of C2H6 Increase. This is due to the fact that under plasma plasma conditions, CO2 can undergo a splitting reaction with the high-energy electrons generated by the plasma: CO2+e*→CO+O, generating reactive oxygen species. The higher the CO2 concentration, the more reactive oxygen species in the system, and the C-H bond and C-C bond of C2H6 are easier to break under the action of reactive oxygen species. Therefore, the conversion of C2H6 increases with the increase of CO2 concentration. The yields of C2H2 and C2H4 show a peak shape change with the increase of the amount of CO2 added. Low CO2 concentration promotes the formation of C2H2 and C2H4, while high CO2 concentration leads to an increase in the number of reactive oxygen species, which promotes the complete breakage of the CH bond and CC bond of C2H6, and the free C free Radicals and reactive oxygen species generate CO. This shows that in the C2H6 oxidative dehydrogenation reaction, the concentration of CO2 in the system is an important parameter. If the concentration of CO2 is too low, the conversion rate of C2H6 will be low, and high-carbon hydrocarbons will be easily generated; if the concentration of CO2 is too high, the oxidation reaction of C2H6 will occur, resulting in a decrease in the selectivity of C2H4 and C2H2. Therefore, it is better to add CO2 at about 50%.

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