图片名称

NEWS

Popular Articles

Contact Us

图片名称
图片名称

Service Hotline

13632675935

CRF

TEL：13632675935

E-mail：shaobo@sfi-crf.com

Address: 1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

5 major surface treatment technologies, take stock of those surface treatment processes that you don’t know

5 major surface treatment technologies, take stock of those surface treatment processes that you don’t know

5 major surface treatment technologies, take stock of those surface treatment processes that you don’t know: Surface treatment refers to the artificial formation of a surface layer on the surface of the substrate that has different mechanical, physical and chemical properties from the substrate. The purpose of surface treatment technology is to meet the special performance requirements of products such as corrosion resistance, abrasion resistance, and decoration. So what are the material surface treatment processes? 1. Surface treatment technology before painting: In order to remove all kinds of foreign matter attached to the surface of the object (such as oil, rust, dust, old paint film, etc.), a good substrate is provided to meet the coating requirements and ensure that the coating has good anti-corrosion performance, decoration and certain For some special functions, the surface of the object must be pretreated before coating. The work of this kind of treatment is generally referred to as pre-painting (surface) treatment or pretreatment (surface). 2. Manual operation technology: For example, scrapers, wire brushes, grinding wheels, etc. Manual treatment can remove the rust and oxide layer on the surface of the workpiece, but the manual treatment has high labor intensity, low production efficiency, poor quality, and incomplete cleaning. 3. Chemical processing technology: Use acidic or alkaline solutions to chemically react with the oxide and oil on the surface of the workpiece to dissolve them in the acid or alkaline solution to achieve the purpose of removing rust, oxide scale and oil on the surface of the workpiece, and then use nylon wool Cleaning with brush roller or 304# stainless steel wire (steel brush roller made of acid and alkali solution) can achieve the purpose. The chemical method is suitable for cleaning thin plates, but its disadvantage is: if the time is not properly controlled, even if the preservative is added, the steel will be over-corroded. For more complex structural parts and parts with holes, use acidic solution to acid After washing, the remaining acid immersed in the crevices or cavities is difficult to completely remove. If it is not handled properly, it will become a hidden danger of future corrosion of the workpiece, and the chemicals are volatile and costly. It is difficult to discharge the chemicals after treatment. If they are not handled properly, It will cause serious pollution to the environment. 4. Mechanical processing technology, mainly including the wire grinder, the grinder and the shot blasting machine of the grinder: The sanding method is also called the polishing method, that is, the brush roller is driven by a motor and rotates at a high speed along the movement direction of the upper and lower surfaces of the strip to remove the oxide scale. Shot blasting is a method of using centrifugal force to accelerate the projectile and throw it to the workpiece to remove rust. However, shot blasting has poor flexibility and is limited by the site. There is a certain degree of blindness during cleaning. Dead corners are easily generated on the inner surface of the workpiece and the cleaning is not in place. When choosing conveying equipment and dust removal equipment, manufacturers who need spray treatment must fully consider the actual production situation and try to choose equipment with higher power, because the equipment for spraying operations generally wears quickly, and after long-term use, this or that The problem will have a great impact on production. Choosing equipment with higher power will greatly reduce the time and cost of later maintenance. 5. Plasma surface treatment technology: The plasma surface treatment machine is composed of plasma generator, gas pipeline, plasma nozzle and other components. The plasma nozzle generates high-voltage and high-frequency energy, generates low-temperature plasma through plasma jet and controlled discharge, and uses compressed air to spray plasma onto the surface of the workpiece. When the surface of the processing object is in contact, the object changes and chemical reactions occur. Its surface is cleaned to remove hydrocarbon dirt, such as grease, auxiliary additives, etc., or produce roughness due to etching, or form a dense cross-linked layer, or introduce oxygen-containing polar groups (hydroxyl, carboxyl, etc.) ), these groups can improve the adhesion properties of various coating materials and optimize the adhesion of coatings and the use of coatings.

MORE +
Plasma surface activation treatment method of plasma etching process to remove static electricity

Plasma surface activation treatment method of plasma etching process to remove static electricity

Plasma surface activation treatment method of plasma etching process to remove static electricity: 　　 With the development of semiconductor manufacturing technology, the process nodes continue to shrink, and the back-end copper interconnection technology has been widely used. As we all know, the structural basis of copper interconnection technology is the Damascus structure, and the etching of the Damascus structure occupies an important position in the subsequent process. There are many types of subsequent etching methods, such as etching the through hole first and then the channel, etching the channel first and then the through hole and simultaneously etching the through hole channel. Either way, there are often static residues in the wafer after etching, and the quality of static removal directly affects the quality of the channels and through holes. 　　 In the cleaning process after the plasma dielectric etching in the later stage, a method commonly used in the industry is to use a water-soluble multi-component organic mixture. After the pollution and cleaning technology of plasma etching, after the "partial dielectric layer removal" step, the water-soluble multi-component organic host mixture (solution A) in the cleaning process can be used to remove the remaining through holes and channels. By-products such as silicon, carbon and copper are removed. After plasma etching, there is a phenomenon of residual electric charge on the surface of the copper wire, which will cause serious copper loss in the subsequent solution cleaning process. 　　The change of the cleaning solution can appropriately adjust the electrostatic residue on the wafer. Another cleaning solution (solution B) (the main body of which is an organic electrolyte, and is not easy to undergo oxidation-reduction reactions with copper metal) is used to compare the cleaning effect with the above solution. After cleaning with solution B, the copper metal layer did not show a large area of ​​element sparseness, and the product yield reduction caused by copper loss did not occur. This indicates that the main cause of copper loss is the residual charge on the surface of the wafer, and solution B is not easy to undergo oxidation-reduction reactions with copper metal. However, solution B has a weak cleaning ability for silicon, carbon and copper residues, and has destructive process limitations on the dielectric layers on both sides of the metal layer, resulting in an increase in the dielectric constant (K) value, taking into account the cleaning residue and cleaning Effectively, changing the type of cleaning solution cannot fundamentally solve the problem of residual charge. 　　 Plasma surface activation treatment plasma-assisted static elimination optimization method found that the optimization of the plasma-assisted static elimination process is the control of variables such as the pressure of the reaction chamber, the power of the RF power supply, the temperature and the plasma flow rate. The plasma surface activation treatment plasma uniformity, the optimization of the RF power off method, and the optimization of the auxiliary program are three ways to reduce the residual charge on the chip. In the process of removing static electricity, the plasma assists the process steps of removing static electricity from the wafer, and under the premise of using the cleaning solution commonly used in the industry, the charge amount of the wafer is reduced, and finally the product yield is improved to a certain extent in the post-etching stage. 　　The de-static experiment process involves radio frequency power supply, coupling capacitor, adsorption device, pumping valve and plasma input device, etc. When the RF power supply is connected to the wafer in reactive ion etching, statistically, the probability of electrons hitting the wafer is greater than that of positive ions. Because of their high reaction characteristics, electrons are more likely to be absorbed by the wafer surface, resulting in charge accumulation. Too high concentration of plasma surface activation treatment plasma forms a local electrostatic field with the surface of the wafer, which inhibits the process of plasma-assisted destaticization, and the potential mutation occurs. The overall potential of the wafer varies greatly, which deviates from the target value and prevents the wafer from being separated from the adsorption device. When the radio frequency power is reduced to zero in proportion to time, the overall potential of the wafer changes less and the static removal process is more stable. 　　 The plasma-assisted de-static process has been optimized; and relying on the detection of the residual charge on the wafer and the analysis of the metal layer by the transmission electron microscope to optimize the feasibility and effectiveness of the process. The optimization process has a wide range of applications and can be used to improve process reliability and product yield. However, the opti

MORE +
Plasma glass cleaning machines are widely used in manufacturing industries such as mobile phone coating and new materials

Plasma glass cleaning machines are widely used in manufacturing industries such as mobile phone coating and new materials

Plasma glass cleaning machines are widely used in manufacturing industries such as mobile phone coating and new materials:        Mobile phone screens are generally coated on their surface, and their effects are different. Some are to improve light transmittance, and some are to improve hydrophobicity and oleophobicity by brushing AF film (alias anti-fingerprint film, in fact, the actual effect is mostly It is anti-fingerprint). The surface of some raw materials is very smooth, and the surface of some raw materials has air pollutants. It is easy to make the surface difficult to be coated, or the surface is easy to fall off after coating, just like painting on rusty iron. At this time, it is necessary to improve the surface roughness of the product and remove the impurities on the surface in order to carry out high-quality coating treatment, just as we need to remove the rust with sanding paper, and then paint. ,         So the problem arises, we are unlikely to wipe the phone screen clean with sandpaper, so the phone screen will be scratched. So, is there a way to remove impurities from the surface of the mobile phone screen and improve its surface roughness without affecting the normal application of the appearance? At this time, a plasma glass cleaning machine appeared. Crokes clearly proposed the existence of the fourth state of matter in 1879, which is called plasma (Plasma). The plasma generated by the plasma glass cleaning machine through reaction includes electrons, ions, and highly active free radicals. These particles can easily react with pollutants on the surface of the product and form carbon dioxide and water vapor to increase surface roughness and surface cleaning. Purpose. ,         Plasma glass cleaning machine plasma (plasma) forms free radicals in the reaction, which can remove organic pollutants on the surface of the product and activate the surface of the product. The purpose is to improve the adhesion of the product surface and the reliability and durability of the surface adhesion. It can also clean the surface of the product, increase the surface affinity (reduce the angle of water drop), and increase the adhesion of the coated body. ,         But on the other hand, using compressed air as the gas source of the plasma glass cleaning machine, the plasma generated by its reaction can deposit a large amount of oxygen ions and free radicals. If the plasma treated product is quickly coated or sprayed, the oxygen ions will It will chemically bond with the product and the spraying material. This bonding reaction can further improve the bonding strength between the molecules and make the film difficult to detach and fall off In addition, the plasma glass cleaning machine processing process is also a kind of micro-processing. Generally, the processing depth can reach nanometer to micron level. It is difficult to see the changes before and after the product is processed with the naked eye. Therefore, the plasma glass cleaning machine is widely used in mobile phone coating and new materials. And other manufacturing industries.

MORE +
Removal of pollutant molecules in the production process of microelectronics packaging of plasma processing equipment

Removal of pollutant molecules in the production process of microelectronics packaging of plasma processing equipment

Removal of pollutant molecules in the production process of microelectronics packaging of plasma processing equipment: In the microelectronics industry, cleaning is a broad concept that includes all processes related to the removal of pollutants. Generally, it refers to effectively removing residual dust, metal ions, and organic impurities on the surface of the data without destroying the surface and electrical characteristics of the data. At present, the widely used physical and chemical cleaning methods can be roughly divided into two types: wet cleaning and dry cleaning of plasma treatment equipment.  At present, wet cleaning still occupies the leading position in the cleaning process of microelectronics. However, from the perspective of environmental impact, consumption of original materials and future development, dry cleaning is significantly better than wet cleaning. Dry cleaning has developed rapidly and has obvious advantages. Plasma processing equipment cleaning has gradually begun to be widely used in semiconductor manufacturing, microelectronic packaging, precision machinery and other industries. The major feature of plasma processing equipment technology is that regardless of the type of substrate to be processed, it can process metals, semiconductors, oxides and most polymer materials, such as polypropylene, polyester, polyimide, and polychloride. Ethane, epoxy and even polytetrafluoroethylene, etc., can be used for comprehensive, partial and messy structure cleaning. Plasma treatment equipment cleaning also has the following characteristics: simple numerical control technology, high degree of automation; high precision of the operating device; no damage layer on the surface, material quality is guaranteed; vacuum from the inside out, does not pollute the environment, and ensures that the surface is cleaned Not subject to secondary pollution. In the production process of microelectronics packaging, due to fingerprints, flux, various cross-contamination, natural oxidation, etc., various dirts will be formed on the surface of equipment and materials, including organic matter, epoxy resin, photoresist, solder, metal salt, etc. This will have a significant impact on the quality of related processes in the packaging production process. Plasma cleaning with plasma processing equipment can easily eliminate the pollutant molecules generated during the production process, ensure the close contact between the surface atoms of the workpiece and the plasma atoms, and then effectively improve the wire connection strength, improve the quality of wafer bonding, and reduce package leakage. Gas rate, improve component performance, increase yield and reliability. Before the aluminum wire connection, a certain domestic unit used the plasma cleaning method to increase the connection yield by 30% and the consistency of the connection strength.

MORE +
The importance of plasma plasma processor cleaning organic field effect transistor (OFET) materials

The importance of plasma plasma processor cleaning organic field effect transistor (OFET) materials

The importance of plasma plasma processor cleaning organic field effect transistor (OFET) materials: Organic Field Effect Transistor (OFETS) is an active device that can change the conductivity of the semiconductor layer by changing the gate voltage, and then manipulate the current flowing through the source and drain. As the basic element in the circuit, the organic field effect transistor has received extensive attention and has been developed rapidly due to its advantages of low power consumption, high impedance, low cost, and large area production. Its components are mainly composed of electrodes, organic semiconductors, heat insulation layers and substrates. These components have a great influence on the performance of OFETs. The electrode, organic semiconductor, insulating layer and substrate are processed by a plasma plasma processor to improve the function of the material. 1. The substrate substrate-plasma plasma treatment machine plasma treatment, remove the substrate surface impurities, improve surface activity The substrate is generally on the bottom layer of the transistor, and the header plays a supporting role. It can be used as the substrate material of OFET: glass, silicon wafer, quartz, polycarbonate (PC), polyethylene naphthalene (PEN), polyimide (PI), polyethylene (PET), etc. Inorganic substrates have the advantages of high melting point and smooth surface, such as glass, silicon wafer, and quartz. Although the surface looks rough, these data show elastic and flexible materials like polyethylene naphthalene (PEN) and polyethylene (PET). The substrate processed by plasma plasma processing machine needs to be processed in the preparation stage to remove impurities on the surface of the substrate and improve surface activity. 2. Electrode treatment-plasma plasma treatment machine plasma treatment In organic field-effect transistors (OFETs), electrodes are another important component. It is generally believed that when the electrical barrier height of the organic semiconductor layer/electrode interface is △E<0.4eV, an ohmic contact can be formed between the electrode and the organic semiconductor layer. For P-type OFETs, the occupied orbital energy level is -4.9 eV to -5.5eV, and a higher work function is required. Commonly used ones are Au (-4.8eV-5.1eV) and ITO (-5.1eV). Ordinary ITO requires an improved work function due to its low work function, so it can be improved with a quasi 13.56MHz frequency VP-R3 plasma processor. 3. Insulation layer treatment-PLASMA plasma retouches the silicone surface to improve the compatibility of materials When the plasma plasma processor is running, the charge is first accumulated and transferred on the contact surface between the semiconductor and the insulating layer. In order to ensure that the gate leakage current between the gate electrode and the organic semiconductor is small, the insulating layer data is required to have a higher resistance. It requires better insulation. At present, the commonly used insulating layer data is first of all inorganic insulating layers, such as oxide layers. During this period, silicon dioxide is the insulating layer generally used in organic field-effect transistors. However, due to the existence of certain defects on the surface of silicon dioxide, in addition to its Number with organic semiconductors

MORE +
The radio frequency plasma cleaner plays an important role in improving the working reliability of GaAs semiconductor devices

The radio frequency plasma cleaner plays an important role in improving the working reliability of GaAs semiconductor devices

The radio frequency plasma cleaner plays an important role in improving the working reliability of GaAs semiconductor devices: GaAs has excellent optoelectronic properties and is a widely used semiconductor material in II-V compound semiconductors. However, the dangling bonds on the surface of GaAs materials are easily combined with impurities or oxygen elements, forming impurity defects and oxide layers on the surface, becoming non-radiative recombination centers, affecting the light-emitting characteristics of the material, and can bring serious consequences to the optoelectronic characteristics of GaAs semiconductor devices. Influence. Passivating the GaAs surface can not only reduce the surface impurity concentration, eliminate non-radiative recombination centers, and improve its photoelectric performance, but also the passivation protective layer can prevent the GaAs surface from combining with oxygen in the atmosphere and being re-oxidized , It plays an important role in improving the working reliability of GaAs semiconductor devices. Sulfur passivation of GaAs semiconductor materials can form sulfur-containing compounds on the surface, which can significantly improve the physical and chemical properties of the GaAs surface. Using the plasma processing method of a radio frequency plasma cleaner, the sulfur-containing Ar plasma is guided to bombard the GaAs sample, so that the sulfur reacts with the GaAs to form a thicker sulfur-containing passivation layer, and the passivation effect can be maintained for a long time. The method has strong controllability, avoids the influence of the strong corrosion effect of wet sulfur passivation, and provides new technical means for improving the performance of GaAs-based semiconductor optoelectronic devices and increasing their working life. Use the Ar glow discharge of a radio frequency plasma cleaner to clean the surface of the sample with low power to remove the surface oxide layer. Then the sulfur element is heated, and the sulfur partial pressure in the vacuum chamber can be adjusted appropriately by changing the heating temperature. Then through Ar, using Ar plasma induction, the sulfur vapor is discharged to generate sulfur plasma, which reacts with the CaAs sample on the slide table to generate stable sulfur-containing compounds on the surface of the sample. In order to adjust the partial pressure of sulfur vapor in a wider range, we appropriately control the pumping rate of the vacuum system by adjusting the vacuum baffle to ensure that there is sufficient and stable sulfur vapor concentration in the cavity to participate in the surface reaction of the sample. After Ar plasma cleaning by a radio frequency plasma cleaner, the PL intensity is slightly higher than that of the untreated GaAs sample. This is because Ar plasma has a cleaning effect on the oxide layer on the GaAs surface, which reduces the non-radiative recombination of the GaAs surface and improves the efficiency of photoluminescence. The PL intensity of the sample treated with sulfur-containing plasma is 104% higher than that of the sample bombarded by Ar plasma alone, indicating that the sulfur plasma has a good surface passivation effect. Compared with the untreated sample, the PL peak intensity increased by 71%, and after annealing, the peak wavelength of the plasma sulfur passivated sample was restored. The passivation of GaAs samples by sulfur plasma will not cause obvious impurity pollution, especially the passivation effect is relatively stable, which is more suitable for the passivation process of GaAs optoelectronic devices. The surface of the GaAs substrate was subjected to dry sulfur passivation using a radio frequency plasma cleaner method. The passivation effect of radio frequency plasma is affected by substrate temperature, sputtering power, and degradation temperature. By optimizing the sulfur plasma passivation conditions, the PL intensity of the sample was increased by 71%, and it showed better PL stability.

MORE +
< 1...353637...43 > proceed page
图片名称

CRF

National Service Hotline

136 3267 5935

Contact Email

shaobo@sfi-crf.com

Address:1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

图片名称

Add WeChat
Get related information

Links

Apply to exchange friend links

Copyright © Shenzhen Chengfeng Smart Co.

京ICP备10002622号-38

粤公网安备 44030602005200号

图片名称

Cheng Feng Zhi Zuang a focus on plasma research and development for 20 years

We

The services of

Inquire for free sample testing

1-to-1 program customization

24-hour online after-sales service

Source manufacturer

Get the program
%{tishi_zhanwei}%
图片名称

Scan the code for information

诚峰智造