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Effect of CeO2CO2 loading on ethane conversion reaction under plasma plasma

Effect of CeO2CO2 loading on ethane conversion reaction under plasma plasma

Effect of CeO2CO2 loading on ethane conversion reaction under plasma plasma: Effect of CeO2 loading on ethane conversion reaction under plasma plasma: When CeO2 loading increased from 0 to 10%, C2H6 conversion increased from 33.8% to 42.4%, but further increased CeO2 loading, C2H6 conversion slightly increased There is a decrease. On the contrary, the CO2 conversion decreased with the increase of CeO2 loading. When the CeO2 loading was increased from 0 to 10%, the total yield of C2H4 and C2H2 increased from 12.7% to 21.8%. Therefore, it is necessary to study the conversion reaction of ethane under the combined action of 10% CeO2/Y-Al2O3 and plasma.  Plasma plasma 10%CeO2/Y-Al2O3, the effect of CO2 addition on the ethane conversion reaction under the combined action: With the increase of CO2 addition, the ethane conversion rate increases monotonically, which indicates that the addition of CO2 is beneficial to ethane conversion. In the plasma catalytic reaction, C2H6 molecules first inelastically collide with high-energy electrons to generate active species such as CH3 and C2H5. Since the bond energy of the CH3-CH3 bond is 3.8eV and the bond energy of the CH3CH2-H bond is 4.2eV (the average energy of the electrons in the plasma is 6eV), the C2H6 molecule dissociates under the action of the plasma as follows: C2H6 + e* → CH3 + CH3 + e (3-38) C2H6 + e* → C2H5 + H + e (3-39) Similarly, the inelastic collision of CO2 molecules with high-energy electrons causes the C-O bond to break, generating reactive oxygen species: CO2 + e* → CO + O- (3-40) CO2 + e* → CO + O +e (3-41) The inelastic collision of reactive oxygen species and C2H6 molecules will eventually generate C2H4 and C2H2: C2H6+0 →C2H4+H2O C2H6+O- →C2H4+H2O+e (3-42) C2H6+2O→C2H4+H2O C2H6+2O-→C2H2+2H2O+2e (3-43) Therefore, as the amount of CO2 added to the reaction system increases, more oxygen species react with ethane to generate ethylene and acetylene.

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The effect of CO2 addition on the ethane conversion reaction under the combined action of plasma and 10% CeO2/Y-Al2O3

The effect of CO2 addition on the ethane conversion reaction under the combined action of plasma and 10% CeO2/Y-Al2O3

The effect of CO2 addition on the ethane conversion reaction under the combined action of plasma and 10% CeO2/Y-Al2O3: It can be seen that the conversion rate of CO2 decreases with the increase of CO2 addition, but it is higher than the conversion rate of pure CO2 under the same plasma conditions, which indicates that C2H6 contributes to the conversion of CO2. According to the reaction equations (3-40) and (3-41), the decomposition rate of CO2 is related to the concentrations of CO2, CO, O- and O in the plasma catalytic system. O and O- are consumed by the reaction with H, and H is determined by C2H6 decomposition reaction generated. Therefore, the conversion rate of CO2 increases with the increase of C2H6 concentration. It can be seen that the selectivity of C2H4 and C2H2 decreases monotonically with the increase of CO2 and the addition amount, so although the conversion rate of ethane increases with the increase of CO2 addition, the total yield of C2H4 and C2H2 changes in a peak shape, and the addition amount of CO2 is The extreme value occurs at 50%. On the other hand, reactive oxygen species will further react with ethylene or acetylene, resulting in the cleavage of its C-H bond to form CO or carbon deposition. This phenomenon is especially obvious when the amount of CO2 added is large. Therefore, when the amount of CO2 added is greater than 50%, the total yield of C2H4 and C2H2 decreases. The change in the amount of CO2 added leads to changes in the ratio of C2H4/C2H2 and H/CO in the gaseous products of the reaction. With the increase in the amount of CO2 added, the ratio of C2H4/C2H2 increases and the ratio of H2/CO decreases. This is due to the CO yield in the reaction system. due to rapid increase.

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The effect of energy density on the ethane conversion reaction under the combined action of plasma plasma and 10CeO2/Y-Al2O3

The effect of energy density on the ethane conversion reaction under the combined action of plasma plasma and 10CeO2/Y-Al2O3

The effect of energy density on the ethane conversion reaction under the combined action of plasma plasma and 10CeO2/Y-Al2O3: Table 3-5 shows the effect of energy density on the ethane conversion reaction under the combined action of plasma plasma and 10CeO2/Y-Al2O3. When the energy density reaches 300 kJ/mol, the plasma reaction is initiated, and the conversion rate of C2H6 and CO6 increases with the increase of the energy density, and the total yield of C2H4 and C2H2 increases accordingly until the energy density reaches 1500 kJ/mol. stability. In a flow plasma reactor, the increase in energy density means that the energy and number of high-energy electrons increase, which will facilitate the reaction of equations (3-26) to (3-29). The relative amount of active species increased. Therefore, the higher the energy density in the plasma reactor, the higher the conversion of C2H6 and CO2. At the same time, the research shows that the increase of energy density is not good for C2H4 or C2H2 selectivity. When the energy density increases from 380 kJ/mol to 1500 kJ/mol, the C2H4 selectivity decreases from 36.0% to 16.2%, and the C2H2 selectivity decreases from 55.4%. fell to 24.2%. Tables 3-5 show the effect of energy density on the gas product C2H4/C2H2 ratio and H2/CO ratio. The C2H4/C2H2 ratio and H2/CO ratio varied in the range of 0.63-0.68 and 2.47-2.91 under different energy densities. Under the action of atmospheric pressure non-equilibrium plasma plasma, C2H6 can undergo oxidative dehydrogenation reaction in CO2 atmosphere to generate C2H2 and C2H4. With CeO2/Y-Al2O3 as the catalyst, CO2 oxidation of CH6 dehydrogenation can occur when the reaction temperature is 973K. The reaction temperature and the ratio of reactant gas have a great influence on the reaction results; when the plasma and the catalyst are jointly activated, CO2 is oxidized to C2H6 conversion. The properties of the catalyst in the reaction have a significant impact on the reaction. The metal oxide catalyst is beneficial to the conversion of ethane to C2H2 and C2H4, and the metal catalyst can increase the percentage of C2H4 in the product.

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The application of plasma surface cleaning technology in the field of IC packaging will become more and more extensive

The application of plasma surface cleaning technology in the field of IC packaging will become more and more extensive

The application of plasma surface cleaning technology in the field of IC packaging will become more and more extensive: The current cleaning of electronic components is mainly plasma cleaning. Traditional electronic components are cleaned by wet method, and some components on the circuit board, such as crystal oscillators, have metal shells. After cleaning, it is difficult to dry the moisture inside the components. The water and other manual cleaning, the smell is big, the cleaning efficiency is low, and the labor cost is wasted.        Integrated circuits, or IC chips, are the complex building blocks of today's electronics. Modern IC chips include integrated circuits printed on a wafer and attached to a "package" that contains electrical connections to a printed circuit board on which the IC chip is soldered. Packaging for IC chips also provides head transfer away from the wafer and, in some cases, a lead frame around the wafer itself. When an IC chip includes a lead frame, the electrical connections on the die are bonded to pads on the lead frame, which is then soldered to the package.        In the field of IC chip manufacturing, plasma treatment technology has become an irreplaceable mature process, whether it is in the implantation of chip source ions, or the coating of wafers, or what our low-temperature plasma surface treatment equipment can achieve: Ultra-purification treatment and surface activation to remove oxide film, organic matter, and masking on the surface of the wafer improve the wettability of the wafer surface.

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Plasma-formed high-pressure shock wave technology is used in titanium and aluminum alloys in the aerospace industry

Plasma-formed high-pressure shock wave technology is used in titanium and aluminum alloys in the aerospace industry

Plasma-formed high-pressure shock wave technology is used in titanium and aluminum alloys in the aerospace industry: Shock strengthening (LSP), also known as shot peening, is a new type of surface strengthening technology that uses high power density and short pulses to irradiate the surface of materials. A surface absorbing layer (coating layer) on the surface of a material. Explosive vaporization occurs by absorbing energy, and the vaporization produces high-pressure plasma. When the plasma is bound by the confinement layer and explodes, a high-pressure shock wave acts on the metal surface and propagates inside. When the dense and stable dislocation structure is formed on the surface of the material, the surface layer of the material is strain hardened, and a large compressive stress remains, which significantly improves the fatigue resistance and stress corrosion resistance of the material. The impact pressure model induced on the surface of the material, the nanometerization of the surface layer of the impact-induced material, and the impact-induced plasma strengthening technology are applied to the application of titanium alloys and aluminum alloys in the aviation industry. The surface of the polished target is usually coated with a layer of coating (also called sacrificial layer, usually organic black paint, tape or thin metal foils such as lead, zinc, and aluminum). A high peak power density, short pulsed beam is used to focus the beam through a focusing lens into a millimeter-scale spot and then irradiate it through a transparent confinement layer (usually water or glass) onto the coating surface. The coating fully absorbs high-energy energy, and explosive vaporization occurs in a very short time. The vapor continues to absorb energy to generate a high-pressure plasma layer. The latter's outward ejection is bound by the confinement layer to generate a high-pressure shock wave, which generates a strong stress wave that propagates from the surface of the target to the interior. When the pressure peak of the stress wave exceeds the elastic limit of the material for a certain period of time, a dense and stable dislocation structure will be formed on the surface of the material, and microscopic defects such as twins may also be generated, and the surface of the material will be strain hardened. The existence of residual compressive stress will change the stress field distribution on the surface of the structure and improve the fatigue strength of the material. Under the combined action of these two factors, the properties of the material such as fatigue resistance and stress corrosion resistance are significantly improved after plasma strengthening. The microstructure of the material directly affects the surface properties of the material. Grain size is one of the important factors affecting the structural properties of materials. As the grain size of the material surface decreases, the strength, plasticity and wear resistance of the material also increase. Studies have shown that grain refinement and even nanometerization on the surface of materials can improve the ability of materials to resist fatigue, wear and corrosion. Plasma produces strong dislocations and grain refinement in the material, so that under certain conditions, it is possible to realize nanometerization of the surface of the material. Achieving grain refinement is beneficial to improve the surface properties of titanium alloys and thus improve the overall performance of the entire component. The high-pressure shock wave formed by the plasma is introduced into the workpiece to cause plastic deformation of the workpiece under the force effect of the shock wave. The beam is used as a loading tool, and the parameters such as pulse energy, spot size and pulse interval width are controllable. The relative motion trajectory of the impact head and the workpiece is controlled by the numerical control system, which can realize the local forming of the workpiece with a single impact and optimize the plasma parameters. The workpiece is impacted at multiple points and multiple times, so as to realize the flexible stamping and forming of the workpiece.

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Difficulties in the controllable preparation of monolithic coatings by atmospheric plasma spraying process

Difficulties in the controllable preparation of monolithic coatings by atmospheric plasma spraying process

Difficulties in the controllable preparation of monolithic coatings by atmospheric plasma spraying process: Atmospheric plasma spraying technology is a commonly used coating preparation process. As the structural unit of the prepared coating, the morphology and stacking behavior of the monolithic layer determine the microstructure of the coating, which has a significant impact on the performance of the coating. The main factors related to the physical and chemical state of the droplet itself, the guest factors related to the substrate on which the coating is deposited, and the environmental factors affect the formation process of the monolithic layer. A variety of different influences and the correlation between them, and through the comparison of their characteristics, the future development direction that is closer to the real production conditions is proposed. With the continuous development of industrial technology, the requirements for the comprehensive performance of components are getting higher and higher, and the importance of surface engineering has become increasingly prominent. Preparing functional thin layers with a thickness of several micrometers to several millimeters on the surface of parts can change the surface properties of parts, greatly improve their performance, and effectively prolong their service life, which is in line with the requirements of green, circular economy and sustainable development. Thermal spraying is an important part of surface engineering. The spraying process is constantly evolving, the online monitoring and control technology of the spraying process is also developing rapidly, and the types of spraying materials are also expanding, forming a complete industrial system including equipment, raw materials, processes and applications. Atmospheric isomonic spraying (APS) is a kind of thermal spraying technology, which is characterized by high-temperature and high-speed plasma jet as the heat source, and has unique advantages in the preparation of ceramic coatings. In the atmospheric plasma spraying process, the powder particles are sent by the carrier gas into the high-temperature and high-speed plasma flame, heated and accelerated, hit the substrate in a molten or semi-molten state at high speed, spread rapidly, cool and solidify, and finally form a flat A large number of monolithic layers are continuously stacked to form a macro-scale coating. The characteristic unit of the atmospheric plasma sprayed coating, the morphology of the monolithic layer and the stacking behavior between the monolithic layers determine the microstructure of the coating. The monolithic layer is the structural unit of the coating prepared by thermal spraying, and its characteristics are closely related to the macroscopic properties of the coating. The difficulty in the controllable preparation of coatings by the atmospheric plasma spraying process is that there are many factors that need to be controlled in the process, and they often affect each other. The characteristics of high temperature, high speed, and wide distribution of physical and chemical states of droplets also bring great challenges to real-time observation and process control. The formation of the monolayer in the atmospheric plasma spraying process is mainly controlled by the cooling ability of the droplet. When the droplet cooling rate is fast, the fluidity of the liquid material decreases rapidly, and tends to form a disc-shaped monolithic layer; otherwise, it has a strong tendency to sputter. A closely related difference in coating performance brought about by the change in the monolithic profile is that the bond between the disc-shaped monolithic layer and the substrate is stronger, while the bond between the sputtered monolithic layer and the substrate is relatively strong. lower. More reliable in-situ temperature and velocity monitoring, especially temperature and velocity measurement that can track individual droplets, is undoubtedly a direct and effective method to study the effect of process parameters on the characteristics of monolithic layers. It is also an important direction for future development to digitize the morphology characteristics of the monolithic layer and establish a (semi-)quantitative relationship between it and the overall performance of the coating.

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