图片名称

What is a plasma polymerization facility

Plasma polymerization is a method to improve the hydrophobicity of rubber, plastic products or films, hence the derivation of plasma polymerization equipment.   Plasma polymerization is commonly used to prevent debris from attaching to rubber during manufacturing, and by doing so we can improve surfaces such as silicon, rubber and plastic to prevent them from sticking together during further production. Plasma surface modification is considered as a "green" alternative that is more environmentally friendly than other surface modification methods. Plasma surface treatment does not require the use of irritating chemicals, let alone any chemical exposure. This will not only protect the environment, but also protect the lives of employees. Firstly, RF source is used to generate plasma, and then plasma treatment is carried out on the surface of the material, which can improve the hydrophobicity of plastic or rubber surface, so as to realize plasma polymerization.   Plasma treatment has many advantages over other surface treatment methods, which arouses people's interest in plasma treatment. The enhanced chemical and mechanical properties of various polymers formed by plasma technology have led to the application of plasma technology in many different industries and products. The plasma polymerization equipment USES the appropriate treatment gas, we can improve the surface hydrophobicity of the material, improve the wettability and practicality of the product, and prevent the product from bonding during further processing. This method is suitable for many rubber and silicon products.   History of plasma polymerization:   In 1982, functional plasma-polymer film deposition was identified, and these plasma-functional methods can be used not only to produce hydrophobic coatings, but also to improve the biocompatibility of biological implants. The value of functional plasma polymers has been applied in water treatment, care of burn patients and other traumatic injuries. Technologies such as microchannel coating, nano-patterning and microencapsulation all use plasma polymers to improve product quality.

MORE +

Plasma etching contact hole

The contact hole plays an important role in the manufacturing of integrated circuit, connecting the front part and the back part of the metal interconnection. Due to the contact hole layer plays the key role in integrated circuits, in the contact hole plasma etching process, technology integration for key contact hole size, size uniformity, contact hole wall shape control, as well as the contact hole plasma etching process selectivity of the etch stop layer, the consumption of metal silicides, contact hole height uniformity and ensure contact hole opened all the requirements of more and more strict, especially for the improvement of yield is becoming more and more important.   In the Contact hole technology integrated development course, two important milestone is 65 nm node start using NiSi (metal nickel silicide) instead of before CoSi (cobalt metal silicides) as the Contact metal in order to reduce the Contact resistance, reduce the signal delay, and node from 45 nm technology began to use the high stress of silicon nitride material to improve the performance of the device and as a Contact hole Etch Stop Layer (Contact Etch Stop Layer, CESL). With the development of contact hole etching technology, the 65nm/55nm technology nodes were all silicon oxide etching with photoresist mask before, the step sequence of contact hole etching at 90nm is to remove the photoresist first and then open the contact hole stop layer, while the step sequence of contact hole stop layer is to use the first etching to remove the photoresist at 65nm/55nm. Due to the key size requirements of 90nm and 65nm/55nm devices, there is little need for etching process to shrink the size of contact holes.   When the key size of the logic circuit is reduced to 45nm/40nm and more advanced process technology nodes, due to the limitations of lithography, process integration usually requires the key size after contact hole etching to be reduced by about 40nm(dimension deviation) compared to the pre-etching size, and multi-layer mask etching technique is started. Such a large reduction in size in the contact hole etching process presents a challenge to ensure the opening of the contact hole in the case of high aspect ratio. The size deviation is usually achieved mainly through the polymer rich etching process. However, the polymer-rich etching process tends to reduce the process window to ensure good opening of contact holes, control the shape of side wall of contact holes with high aspect ratio and good size uniformity, all of which are exactly the requirements of the etching process proposed by the process integration to achieve more stringent electrical characteristics. In addition, lithography requires thinner and less undeveloped photoresist for graphic exposure. These requirements increase the selectivity of contact hole etching for photoresist, so as to prevent the roundness of contact hole from becoming worse.   Therefore, in order to better transfer graphics, 45nm/40nm began to use multi-layer mask technology of Organic spin coating (Organic under Layer, Si BARC and photoresist in order from bottom to top). When it develops to the 28NM technology, I begin to use the multi-layer mask technology of advanced graphic material (Amorphous Carbon), Hard mask anti-reflection layer (DARC) and Photoresist from the bottom to the top). Among them, organic spin-coated multi-layer mask technology USES spin-coated hydrocarbon polymers and organic material anti-reflection layer is silicon-based hydrocarbon polymers. Both of them are liquid and need to be baked into solid mask at low temperature, so they are called soft mask technology, which is integrated on the photolithography machine and has a very fast process. The advanced graphic material multi-layer mask is the chemical vapor deposition of advanced graphic material (amorphous carbon film) and dielectric material (such as silicon nitrous oxide) film as the anti-reflection layer, so it is also called hard mask technology. Because of the hard mask technology used in the nitrogen oxide silicon material thickness is very thin, soft mask technology is just the thickness of the organic material anti reflector l / 2 or a third, because of this, for passing graphic required for the thickness of photoresist can also be greatly reduced, so that you can significantly increases the graphic show shadow precision of lithography process, to reduce the noise influence and improve safety process window; At the same time, advanced graphics material mask layer technology also has a higher ability of contact hole size shrinkage and make different contact hole roundness, thus, advanced graphics multi-layer mask technology can better transfer graphics, it has excellent process integration process window, are widely used in the forefront of logic integrated circuit manufacturing process.

MORE +

Cleaning features of non-standard industrial automatic cleaning equipment

Surface cleaning can be defined as a cleaning process that removes excess material adsorbed on the surface that can adversely affect the process and performance of the product. Cleaning is an essential process in advanced manufacturing. The removal of excess material from the workpiece surface should be accomplished in the industrial cleaning process at a low cost with the least possible environmental impact. Can be used for metal processing and mechanical operation, the surface modification of tool, electronic industry, jewelry, plastic and glass surface, optical device and the surface cleaning of medical apparatus, etc., each area of the cleaning program has a specific cleaning technology, with the development of science and technology, non-standard custom automatic cleaning device, make cleaning technology and development in the direction of more efficient and rapid.   According to the requirements of fineness, industrial cleaning can be divided into conventional industrial cleaning, precision industrial cleaning and ultra-precision industrial cleaning. According to the cleaning method can be divided into physical and chemical; According to the cleaning medium can be divided into wet method and dry method. No matter how classified, automatic, environmental and efficient cleaning methods are the development direction of the industrial cleaning industry.   Advantages of non-standard automatic cleaning equipment:   Automatic cleaning equipment is to make full use of science and technology, so that the cleaning work fully automated, mechanized, systematic, safe and humanized cleaning system.   1. At present, China's labor cost is rising year by year. Automatic cleaning system can realize automatic mechanized cleaning in the process of industrial cleaning without manual cleaning, which saves a lot of manpower for production enterprises and greatly reduces the cost of employing people.   2, time is efficiency, comprehensive mechanization of automatic cleaning equipment work efficiency is often several times or even tens of times of manual cleaning, industrial automatic cleaning system efficiency can greatly save the cost of production time.   3. Through professional research and system design, automatic cleaning equipment can make the edges and gaps that are difficult to be cleaned manually more effectively.   4. At present, the automatic cleaning system mostly adopts pollution-free and environmental protection technology. Compared with the chemical cleaning method, the odorless, tasteless and non-toxic water medium causes less pollution to the environment and is more environmentally friendly.   5. Due to the high degree of automation of the cleaning system, the program control operation is more stable, which changes the extensive management of the traditional cleaning process, and the control is not strict. Especially for chemical tank truck cleaning and other dangerous industries, automatic cleaning system greatly improves the safety of cleaning.   At present, the cleaning industry has penetrated into almost all industrial fields, including petroleum, chemistry, energy, electric power, metallurgy, construction, machinery and electronics, transportation, textile, printing, and even nuclear industry, and has been widely recognized by the society. Non-standard customized automatic cleaning system makes industrial cleaning with energy saving, high efficiency, consumption reduction, safety, stability and other characteristics, in improving product quality, speed up the production speed, extend the service life of equipment, reduce environmental pollution, purification and beautification of the environment has made a great contribution to the industrial cleaning industry to move forward.   According to incomplete statistics, the market share of Industrial cleaning equipment and industrial cleaning agents in China has reached several hundred billion YUAN, and the production, management and construction enterprises of various cleaning equipment have exceeded 10,000, and the production and sales enterprises of cleaning agents have reached thousands. Now only cleaning supplies manufacturers, distributors and agents in the domestic more than 4000, industrial cleaning has formed a huge industry.   In the industrial green development plan issued by the Ministry of Industry and Information Technology, the overall level of industrial green development will be improved, and industrial cleaning will inevitably need more application of automatic cleaning system. How to realize the comprehensive system automation of industrial cleaning has become an inevitable trend, and will also become the research direction of industrial cleaning enterprises.

MORE +

Etching of passivated layer dielectric aluminum pad by plasma Industrial Cleaning Machine

Etching of passivated layer dielectric material: Passivation layer is used to protect IC devices and metal connection structure, provide a certain stress buffer, not by subsequent cutting, cleaning and packaging process damage and corrosion of the protective layer. The dielectric materials used in the passivation layer are usually silicon oxide and silicon nitride materials, whose dimensions are micron scale and have no special requirements on the lateral wall contour curve. Passivation layer of dielectric material using single photoresist etching for film, etching to [F] for gas, usually is the combination of CF4 and CHF3 or CH2F2 accompanied by some dilute gas, plasma industrial cleaning machine by optimizing etching gas ratio, plasma source power and bias power and temperature adjustment side outline view, size and uniformity of plasma etching depth.   Metal etching of aluminum pad:   Aluminum metal etching usually USES photoresist as mask and is carried out in plasma metal etching reaction chamber. Because the product AlF3 is a non-volatile product with low vapor pressure, it can not be used to etch aluminum, usually it is etched with chlorine gas. Is isotropic etching aluminium, pure chlorine gas for the anisotropic etching process to get the contours of the curve and size, must be used in the process of etching polymer passivation wall for protection, in addition to zapped with plasma physics photoresist polymer, carbon capture to get some more prone to polymer gas as etching agent, such as CHF3, N, CH4, etc; At the same time, BCl3 gas is also widely used in aluminum etching by the plasma industrial cleaning machine. The main purpose is that BCl3 has excellent reactivity with [O] and [H] ions, and the [O] and [H] ions generated in the reaction chamber and the reaction process are taken away after the first reaction to reduce the possibility of aluminum etching termination and corrosion in the future. At the same time, BCl3 gas is decomposed into BClx in plasma, atomic group and positive ion. [BCl3]+ positive ion with a large molecular weight is an important ion source for the formation of plasma physical bombardment, which enhances the effect of physical bombardment. BClx atoms, on the other hand, can "recombine" with Cl atoms, as shown in Formula (3-8), which would normally occur without exposure to Cl atoms BClx + Cl - > BClx + 1 (3-8) This recombination reaction will consume chlorine atoms on the side wall surface under particle bombardment, reduce fluorine atoms adsorbed on the side wall, thus reducing side etching, improving the anisotropy of etching, and achieving a good control of the profile of the side wall contour.   To join in the process of etching can quickly generate polymer provides wall protection gases such as CHF3, N2, or CH4, make relatively preferential adsorption on metal aluminum wall fluorine, nitrogen or hydrocarbons, to further reduce the chlorine atoms react with aluminum wall contact, protect wall, make chlorine gas to metal base aluminum ability of anisotropic etching is better. By studying the influence of these three kinds of gases on the side wall morphology of metal aluminum after etching, the results show that N2 protective gas produces too much side wall protection during etching, which is easy to form trapezoidal side wall morphology. The protection of CHF3 to the side wall is not perfect. CF4 gas provides uniform sidewall protection and maintains a nearly vertical sidewall Angle, providing sidewall protection.   One difficulty in the etching of metal aluminum in the plasma industrial cleaning machine is the complexity of its multilayer metal composite film. TiN or other anti-reflection materials are often used in the composite film as a graphic exposure anti-reflection layer, and the adhesion barrier layer below, such as Ti or other materials, all increase the complexity of the etching process. To antireflective material layer on the surface of the etching, may use the chemical gas is Cl2 / SF6 / CF4 / CHF3 / BCl3 / Ar/O2 combination of these, and etching TiN antireflective film with Cl2 / BCl3 / N2 / CHF3 combination of them. In addition, since the oxidation of aluminum exposed to air occurs almost simultaneously, the production of aluminum oxide must be suppressed or controlled, otherwise the etching can be terminated. Typical steps for etching aluminum metal composite film are described in detail below:   1. Etch anti-reflective layer. 2. Remove the pre-etching of natural oxide layer on the surface (which may also be combined with step 1). 3. The main etching of metallic aluminum is usually detected by the reaction product detector to detect the etching termination of metallic aluminum. 4. Remove overetching of aluminum residues. This step may also be a continuation of the main etching step. 5. Etching of the bottom barrier layer (may also be combine

MORE +

Application of plasma surface treatment machine on printing adhesion

Flexible packaging is undergoing a technological revolution to improve consumer convenience and convenience, and to provide new solutions to a range of challenges throughout the production and distribution chain. High-performance film structures, packaging structures and applications, as well as printing technologies, will continue to bring flexible packaging to existing and new markets. Although traditional corona and flame surface pretreatment methods have been commonly used for flexible packaging of finished products, which are mainly used for drawing the packaging structure and strengthening the coating, atmospheric plasma surface treatment technology can also improve the adhesive ability of flexible packaging.   The atmospheric plasma treatment process has been developed for the treatment/functionalization of various materials and has its unique advantages over corona, flame and primer treatments currently used in flexible packaging applications. Atmospheric plasma surface treatment systems can produce uniform high density plasma using large amounts of inert and reactive gases at atmospheric pressure and low temperature. Atmospheric plasma treatment is similar to vacuum plasma treatment and can be used for surface functionalization of materials. APT production equipment testing has been successfully applied to the treatment of polypropylene, polyethylene, polyester and other materials. The surface energy of the processed material (without any backside treatment or pinhole) can be greatly increased, thus improving its wettability, printability and adhesion.   The atmospheric plasma surface treatment process involves contacting the polymer in a low temperature, high density glow discharge. A plasma is a partially ionized gas that contains a large number of excited atoms, molecules, ions, and free radicals. The gas molecules are excited by introducing the gas (transported in an open design) into an electric field (usually at high frequencies). Under the action of high-frequency electric field, free electrons generate energy, collision with neutral gas molecules and transfer energy, causing them to dissociate, forming many active substances. The surface of the excited material interacts with the solid surface of the plasma to modify the surface chemically and physically. The effect of a plasma on a particular substance depends on the chemical reaction between the surface and the reactants in the plasma. When the contact energy is low, the interaction between plasma and surface can only change the surface of the material. The influence is limited to the depth region of several molecular layers without changing the volume characteristics of the substrate.   The changes caused by the surface depend on the surface composition and the gases used. Gases or mixtures used to treat polymer plasmas include nitrogen, argon, oxygen, nitrous oxide, methane, ammonia and other substances. Each gas produces a unique plasma composition and different surface properties. Such as plasma induced oxidation, nitrification, hydrolysis or amination, the surface can be rapidly and effectively improved. Based on the chemical properties of the polymer, replacing a portion of the molecule after a surface contact reaction makes the polymer moist. Regardless of the gas composition, the surface treatment can alter the flexible packaging substrate to a degree that depends on chemical and process variables: ablation, crosslinking, and activation. High-energy particles (i.e., free radicals, electrons and ions) bombade the polymer surface and break the covalent bonds of the polymer backbone, thus forming a polymer chain with lower molecular weight. When the long molecular components become short, volatile oligomers and monomer by-products will evaporate (ablative) and excrete out. Crosslinking with an inert working gas (argon or helium), a bond fracture occurs on the polymer surface. But since there is no free radical scavenger, it can connect to nearby free radicals in a different chain (cross-linking).   Atmospheric plasmas with high density under atmospheric pressure contain high active substances, which can obviously increase the surface area and form polar groups on the polymer surface, thus making the matrix and its interface (such as ink, paint, adhesive) produce strong covalent bonding. By using atmospheric plasma surface treatment, water-based ink on polyester base structure can be used to improve the adhesion of ink.

MORE +
< 1...303132...132 > proceed page