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Influence of atmospheric pressure plasma pulse peak voltage electrode spacing

Influence of atmospheric pressure plasma pulse peak voltage electrode spacing

Influence of atmospheric pressure low temperature plasma pulse peak voltage:   When the pulse peak voltage varies from 12 to 16 kV, the methane conversion rate increases obviously with the constant increase of the pulse peak voltage. This is because the peak voltage reflects the energy injected into the reactor, which is equivalent to increasing the energy and number of high-energy electrons in the low-temperature plasma at atmospheric pressure, which is conducive to the improvement of methane activation and conversion rate. However, with the increase of peak voltage, the selectivity of C2 decreases and the yield of C2 does not change significantly. This is also because the increase of peak voltage leads to the increase of high-energy electrons, which leads to the continuous fracture of c-H bond of methane and the formation of carbon deposition, and the continuous decrease of C2 hydrocarbon selectivity.   Influence of low temperature plasma discharge electrode spacing at atmospheric pressure:   From the variation trend of methane conversion rate, C2 hydrocarbon selectivity and C2 hydrocarbon yield with discharge electrode spacing, it can be seen that the discharge electrode spacing increases, CH2 conversion rate decreases, C2 hydrocarbon selectivity increases, and C2 hydrocarbon yield slightly peaks. At the discharge spacing of 8mm, the yield of C2 was 19.8%. On the one hand, with the increase of electrode spacing, the discharge space increases, and the residence time of methane in the discharge space is prolonged. On the other hand, with the increase of discharge space, under the premise of constant input energy, the electric field intensity between electrodes decreases, and the average energy of high-energy electrons becomes weaker, that is, the energy transferred to a single methane molecule becomes weaker. Therefore, the increase of discharge distance reduces the average energy of high-energy electrons and increases the effective area of plasma. The two have different effects, but the reduction of the average energy of high-energy electrons has a more obvious effect on methane conversion, which shows a trend of decreasing methane conversion rate. The decrease of high-energy electron energy in plasma at atmospheric pressure is not conducive to the further fracture of C-H, which reduces carbon deposition and improves the selectivity of C2 hydrocarbon. The combined effect of the increase of discharge space and the decrease of the average energy of high-energy electrons was that the CH4 conversion rate decreased, the C2 hydrocarbon selectivity increased, and the C2 hydrocarbon yield did not change much.

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Definition of Plasma Bunting

Definition of Plasma Bunting

Plasma bundling is a process of surface modification so that it can be combined or printed. Often used in PTFE, rubber or plastic, this process actually changes the surface, leaving free radicals and allowing any material to bond reliably to glue or ink water.   The shift register is bound during assembly. Printing on bright surfaces (such as plastic or PTFE) results in poor surface quality, and large amounts of ink do not adhere to the surface. This situation will lead to confusion in printing and subsequent processing of the product. Similarly, sticking a strong plastic handle to a shiny plastic product is difficult because different polymers require very different adhesives.   The surface modification effect is not permanent, and the processing time can vary from several hours to several days depending on the storage conditions of the processed parts. Although the effects of plasma bonding are temporary, the treatment allows sufficient time to complete the processing or printing of these materials. This method is used to bond different surfaces (such as plastic and metal or rubber and plastic), and different surfaces often require different glues, making it difficult to find the right adhesives.   Plasmas are used to modify the surface, so that the plastic or rubber hole can be combined with the adhesive, and the strength can be improved significantly. Plastic has a glossy surface, usually treated or glued to another material, such as a plastic or metal handle. If the smooth surfaces are treated with the right plasma, they can be printed without a smear, or they can be stuck to the handle without having to worry about gluing.   Plasma treatment is very safe and environmentally friendly. By combining power setting and pressurized plasma, only the surface of the material can be changed without changing the properties of the material itself. The plasma binding effect was observed in the deep regions with only a few molecular layers, while the overall properties of the material remained unchanged. This method does not use any stimulant chemicals, thus eliminating chemical safety risks for employees and the environment.

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Influence of atmospheric pressure low temperature plasma energy density

Influence of atmospheric pressure low temperature plasma energy density

In a normal pressure flow plasma reactor, the main factors affecting the plasma energy density are the feed gas flow rate F and the plasma injection power P. The feedstock gas flow rate is one of the main factors affecting the density and collision probability of the active particles in the reaction system. The plasma injection power is the energy source for the generation of various active particles in the plasma (high-energy electrons, reactive oxygen species, methyl radicals, etc.). The dynamic synergistic effect of the two can be described by energy density Ed(kJ/mol). Influence of atmospheric pressure low temperature plasma energy density on methane conversion: With the decrease of plasma energy density, the conversion rate of methane decreases, but the C2 hydrocarbon selectivity increases with the decrease of energy density, and the C2 hydrocarbon yield does not fluctuate much.   In a flow plasma reactor, the injected plasma energy and the total gas flow rate are two important factors affecting plasma chemical reactions. This is because the former is the energy source of various active particles in the plasma, while the latter is the determinant of the density and collision probability of the active particles in the reaction system. When the injected energy is constant, the gas flow rate increases, that is, the energy absorbed by the gas per unit flow rate decreases. Therefore, low flow rate is conducive to improving the yield. However, when the flow rate is too low, the target product is prone to further cracking to form C, resulting in the decrease of the yield of C2 hydrocarbon. Therefore, appropriate plasma energy density must be adopted to obtain the high yield of Hydrocarbon C2.   There is a serious problem of carbon deposition in the conversion of pure methane by plasma. In the low temperature plasma activation reaction at atmospheric pressure, a layer of carbon deposition will be formed on the reactor wall. The longer reaction time or the greater the input energy, the more carbon deposition will be. The increase of carbon deposition will directly affect the conversion rate of CH4, which will make the reaction unable to continue in severe cases.

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Introduction to plasma etching machine

Introduction to plasma etching machine

There are many kinds of plasma etching machines, and the designs of different etching machine manufacturers are also different. Since plasma maintains the plasma shape of etched gas through external energy input, different energy input modes and the design of machine structure will have great influence on the performance and application of plasma. The following is a description of several Plasma etching machines that are frequently used in vLSI production. They are Capacitively CoupledPlasma (CCP), Inductively CoupledPlasma (ICP& TransformerCoupled Plasma (TCP), and Electron Cyclotron Resonance Plasma (Electron Cyclotron Resonance), ECR, Remote Plasma and Plasma BevelEtch. The first three etching machines are named after the way of plasma generation, while the last two machines achieve different etching effects mainly through special structural design. The remote plasma etching machine filters out the charged particles of plasma and etches the materials to be etched with free radicals. This reaction is pure chemical reaction and belongs to isotropic etching. The plasma edge etching machine is specially designed to clean and etch the edge area of the wafer only through the reaction chamber structure, which has a very good effect on reducing the number of defects and improving the yield.   1. Capacitive coupling plasma machine: High-frequency electric fields were applied to two parallel plate capacitors. The initial electrons in the reaction chamber obtained energy under the action of rf electric fields, and the etching gas was ionized by bombardment, generating more electrons, ions and neutral free radical particles to form a dynamically balanced low-temperature plasma. Under the action of the radio frequency electric field, the self-bias voltage perpendicular to the direction of the wafer will be formed, which enables the ions to obtain relatively large bombardment energy. In the initial development stage of capacitance-coupled plasma machine, there is only one RF power supply, and the variation of RF power will affect both plasma density and ion bombardment energy, so the controllability of single-frequency capacitance-coupled plasma is not satisfactory.   Multi-frequency capacitive Coupled Plasma makes the performance of capacitive Coupled Plasma Etchers greatly improved by introducing multi-frequency external power source. For multi-frequency applied electric field, high frequency electric field mainly plays the role of controlling plasma density, and low frequency electric field mainly plays the role of controlling ion surface strike energy. At present, the mainstream capacitively coupled plasma etching machines in semiconductor industry are all dual-frequency and multi-frequency capacitively coupled plasma etching machines. Another characteristic of capacitive coupled etching machines is that the two electrical areas are different. For capacitor-coupled plasmas, the electrode with smaller area will get higher potential difference due to self-bias.   2. Inductively coupled plasma machine: Inductively coupled plasma machine is a method by applying rf voltage to the electromagnetic coil outside the reaction chamber. In the reaction chamber, the rapidly changing induced magnetic field will generate an induced electric field in the chamber, so that the initial electrons can obtain energy and then generate a low-temperature plasma. The electrons in the inductively coupled plasma revolve around the magnetic field lines, and the free path is larger than that in capacitive coupled plasma, and the plasma can be excited at lower pressure. The plasma density is about two orders of magnitude higher than that of capacitive coupling plasma, and the ionization rate can reach 1% ~ 5%. The direct current potential and ion bombardment energy of plasma is about 20 ~ 40V. Compared with capacitive coupled plasma; The ion flux and energy of inductively coupled plasma can be controlled independently. To better control ion bombardment energy, another RF power supply is typically capacitively coupled to a substrate wafer. In the process of inductive discharge, the coil and the capacitive driven substrate will generate capacitive coupling components, that is, in the process of plasma generation, the voltage difference will be generated by the external power supply. This is not conducive to independent control of plasma density and energy. Therefore, a layer of electrostatic shielding is generally added between the coil and the plasma to filter out the capacitive coupling components of the coil without affecting the inductive coupling. The coil layout has a great influence on the performance of the machine, and the design of induction coils from different manufacturers often varies greatly. The main coil layout structure has the aromatic structure and the cylindrical structure.   3. Electron cyclotron resonance plasma machine: Electron cyclotron resonance plasma etching machi

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Surface treatment of PCB board in atmospheric plasma cleaning machine

Surface treatment of PCB board in atmospheric plasma cleaning machine

Atmospheric plasma has been used for many years, and before the next conversion operation, the surface cleaning and functionalization of the substrate and the benefits of plasma treatment are fully recognized, reducing surface morphology degradation, increasing treatment (Dyne) levels, and eliminating negative treatment. Due to the complexity, low speed and high cost of vacuum plasma systems, production requirements are sometimes not met. The atmospheric plasma cleaner, on the other hand, enables PCB substrates to be cleaned on a continuous coil treatment system, just like corona treatment system. Atmospheric plasmas can be treated with different reactive gases and have been successfully tested on metals, films, paper, foams and powders. In addition, according to cleaning requirements and material types, the reel-to-reel processing speed can exceed the current VACUUM processing speed of PCB. Atmospheric plasma cleaning machine for circuit board manufacturing industry provides a special solution, that is, without damaging the sensitive surface to remove the residual pollutants, so as to increase production. Application of atmospheric plasma technology in the manufacture of plasma PCB to improve the processing speed of sheet and coil.   Atmospheric plasma treatment:   When ionized gas is used to treat polymer films, there are three main effects on their surfaces:   Electron bombardment: Electrons produced by plasma electric fields are distributed over the surface of a material at high energies and velocities. This causes the upper chain of the treated material to break, resulting in cross-linking, thus strengthening the material.   Ion bombardment: Ions generated in the plasma electric field are distributed at different energies and velocities on the polymer surface, which will lead to etching and sputtering, thus cleaning the surface substrate and effectively reducing the molecular weight structure.   Gaseous excitation: Ionization of a gas also means that there are many exciting substances in the gas. These stimulated substances, using an appropriate mixture of gases, react with the surface to produce functional groups such as hydroxyl (-OH), carbonyl (-C=O), carboxyl (-COOH), or amino (NHx), which are highly polar and can alter the surface alkali/acid interactions.   Atmospheric plasma glow discharge can be used as an etching process to remove borehole smear and pitting. De-drilling refers to the removal of the epoxy resin from the hole tube, including grease that may be coated on the copper contact surface during drilling. If contaminants are not removed from the surface of the copper sheet, they may interfere with the connection to non-plated copper plated in the plating holes. With the improvement of the property of decontination chemicals, most specifications of standard materials are less relaxed, mainly to remove a large amount of epoxy resin and glass fiber, so that the copper interface protrudes into the hole. The protruding copper surface allows large surface areas to be used to interconnect with subsequent copper coatings, and the exposed epoxy surfaces can be removed during drilling to avoid being daubed.   Atmospheric plasma is used to remove the photoresist residue that may remain after the circuit forms a long distance between the panel and the inner layer. Humidification is used to remove the photoresist from the outer layer, usually in the same bath or spray chamber as the inner layer. Although corrosion resistant stripping is a single tank operation, both the developer and stripper have a short cleaning life (usually in hours), and these operations produce a large amount of waste liquid treatment liquid that can be significantly reduced by treatment with an atmospheric plasma cleaner.

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On-line vacuum plasma cleaning machine

On-line vacuum plasma cleaning machine

The main structure of on-line vacuum plasma cleaning machine includes: rack, automatic feeding equipment and automatic cleaning equipment; The upper and lower material pushing mechanism, the upper and lower material taking and placing platform, the upper and lower material conveying system, the upper and lower material shifting mechanism, reaction bin, main structure of equipment and electrical control system, etc. On-line vacuum plasma cleaning machine has simple structure, easy to use and high efficiency. The machine has compact structure, comprehensive performance, uniform and stable treatment effect, flexible configuration and high cost performance. And can be manually or before the process of automatic completion of feeding, feeding, positioning, open the material door, feeding, cleaning and discharging, and then by manual feeding or in accordance with the process of automatic completion of feeding, feeding, feeding. On-line vacuum plasma cleaning machine is a design concept of automatic material handling. Compared with the traditional plasma cleaning system, it reduces the cost of manual handling and improves the automation level of the equipment.   Online type vacuum plasma cleaning belongs to high precision dry cleaning, its principle is to use rf source to produce the high voltage ac electric field, such as oxygen, argon, hydrogen process gas into a highly active or high-energy ion, the workpiece surface by chemical reactions or physical function, at the molecular level of pollutant removal, improve the surface activity. The ideal cleaning effect can be achieved by adopting different cleaning techniques for different pollutants.   In the vacuum of vacuum plasma cleaning, the plasma reacts or collides with organic pollutants and micro-particle pollutants to form volatile substances, which are removed by working air stream and vacuum pump, so as to achieve surface cleaning effect of the workpiece. Plasma cleaning is a kind of stripping cleaning, which has no pollution to the environment after cleaning. On - line plasma equipment is based on mature plasma technology and equipment manufacturing, adding automatic functions such as feeding and feeding. Precleaning the lead frame in IC packaging, such as gluing pieces, chip bonding and plastic sealing before cleaning, greatly improves the performance of bonding and bonding strength, and avoids secondary pollution caused by human factors to long-term contact with the lead frame and damages to the chip at the same time.   On-line plasma cleaning is widely used in gluing, welding, printing, coating and other occasions, through plasma acting on the surface of the product, improve its surface activity, and activate the surface performance, can significantly improve the product, has become an essential equipment for the surface performance treatment of middle and high-grade products. On-line vacuum plasma cleaning machine focuses on plasma surface modification or plasma surface treatment applications. It is the high energy and instability of plasma that is used to clean, activate and activate the surface of treated materials, thus changing the microstructure, chemical properties and energy of the surface.   The interaction of plasma with the surface of an object can be divided into physical interaction (ion bombardment) and chemical interaction. The mechanism of physicochemical reaction is that the active particles are bombarded on the surface to be cleaned, so that the pollutants can be separated from the surface and sucked out by the vacuum pump. The chemical reaction mechanism is that all kinds of active particles react with pollutants to produce volatile substances, and then the volatile substances are sucked out by vacuum pumps.   Plasma cleaning is mainly based on physical reaction, and there is no chemical reaction on its own. No oxide is left on the surface of cleaning, which can keep the chemical purity of the cleaned object. The disadvantage is that there is a small amount of damage to the surface, which will produce a large thermal effect. The different substances on the surface of the object to be cleaned have poor selectivity and low corrosion rate.   Chemical reaction plasma is used for cleaning, which has the advantages of high cleaning speed, good selectivity, and can remove organic matters more effectively, while the disadvantage is that it can produce oxides on the surface. Compared with physical reaction, the disadvantage of chemical reaction is not easy to overcome. The influence of the two reaction mechanisms on the surface morphology is significantly different. The physical reaction can make the surface become more "rough" at the molecular level, thus changing the surface adhesion property.   In addition, the reaction mechanism of plasma cleaning on the surface, the physical and chemical reaction plays an important role, also is the reactive ion etching and reactive ion beam etching

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