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The effect of plasma plasma energy density on C2H6 dehydrogenation reaction in H2 atmosphere

The effect of plasma plasma energy density on C2H6 dehydrogenation reaction in H2 atmosphere

The effect of plasma plasma energy density on C2H6 dehydrogenation reaction in H2 atmosphere: The effect of H2 addition on the C2H6 dehydrogenation reaction when the plasma energy density was 860 kJ/mol: with the increase of H2 concentration, the conversion rate of C2H6, the yields of C2H2, C2H4 and CH4 all increased, which indicated that the addition of H2 It is beneficial to the conversion of C2H6 and the generation of C2H2, C2H4 and CH4. The possible reasons for the above results are: on the one hand, due to its good thermal conductivity, hydrogen can transfer a large amount of heat and act as a diluent gas in ethane plasma; When the electron collides with the H2 molecule inelastically, the H2 molecule absorbs energy to break the HH bond and generate an active hydrogen atom. Active hydrogen atoms can abstract hydrogen from C2H6 to generate C2H5 radicals, which themselves generate H2. Further hydrogen abstraction by active hydrogen atoms and radical recombination reactions lead to the formation of C2H4 and C2H2. At the same time, the inelastic collision of C2H6 itself with high-energy electrons is more likely to lead to the breakage of its C-C bond, resulting in the formation of the middle base, which lays the foundation for the formation of CH4. Therefore, compared with pure C2H6 dehydrogenation under plasma plasma, the conversion rate of C2H6, the yields of C2H2, C2H4 and CH4 increased significantly with the increase of H2 concentration. One advantage of the force of adding H2 to C2H6 is that it inhibits the formation of carbon deposits. The effect of plasma plasma energy density on C2H6 dehydrogenation reaction in H2 atmosphere is shown in Table 3-2. With the increase of plasma injection power, the conversion rate of C2H6 increases rapidly. This is because when the plasma energy density increases, the electron energy and electron density in the plasma increase, and the high-energy electrons inelastically collide with H2. The probability increases, so the probability of generating active species increases, resulting in an increase in the conversion rate of C2H6, and an increase in the concentration of various CHx and C2Hx free radicals required for other products, which promotes the increase in the production of C2H4 and C2H2. When the plasma energy density is 860kJ/mol, the ethane conversion rate can reach 59.2%, and the sum of the ethylene and acetylene yields can reach 37.9%. But at the same time, it should be noted that with the increase of plasma energy density, the selectivity to generate C2H4 and C2H2 gradually decreases, and more carbon deposits are generated on the reactor wall. In order to obtain higher energy efficiency, the appropriate plasma energy density should be selected, rather than the higher the energy density, the better. Table 3-2 Effect of plasma energy density on C2H6 reaction in H2 atmosphere Ed/(kJ/mol) XC2H6/% YCH4/% YC2H4/% YC2H2/% 320 37.6 2.6 3.7 10.6 640 45.2 6.1 8.7 21.2 860 59.2 7.0 9.2 28.7 1000 61.6 7.9 9.6 34.6 Note: The reaction conditions are C2H6/H2=2

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Research on WAT method used in integrated circuit manufacturing in plasma CMOS process

Research on WAT method used in integrated circuit manufacturing in plasma CMOS process

Research on WAT method used in integrated circuit manufacturing in plasma CMOS process: WAT (Wafer Accept Test) is the silicon wafer acceptance test, which is to conduct electrical tests on various test structures on the silicon wafer after the semiconductor silicon wafer has completed all the manufacturing processes. It is a means of reflecting product quality. A quality inspection before products are put into storage. With the development of semiconductor technology, plasma technology has been widely used in the manufacture of integrated circuits. Ion implantation, dry etching, dry debonding, UV radiation, film deposition, etc. may introduce plasma damage. The WAT structure cannot be monitored and can lead to early failure of the device. Plasma processes are widely used in integrated circuit manufacturing, such as plasma etching, plasma enhanced chemical vapor deposition, ion implantation, and the like. It has the advantages of good directionality, fast reaction, low temperature and good uniformity. However, it also brings charge damage. As the thickness of the gate oxide layer continues to decrease, this damage will increasingly affect the reliability of the MOS device, because it can affect the fixed charge density and interface state density in the oxide layer. , flat-band voltage, leakage current and other parameters. Large-area ion-collecting regions (polycrystalline or metallic) with antenna device structures are typically located on thick field oxides, so only the tunneling current effects on thin gate oxides need to be considered. The large-area collection area is called the antenna, and the tunnel current amplification factor of the device with antenna is equal to the ratio of the area of ​​the collection area on the thick field oxide to the area of ​​the gate oxide area, which is called the antenna ratio. If the gate oxide area is small and the gate area is large, the ions collected by the large-area gate will flow to the small-area gate oxide area. In order to maintain charge balance, the tunnel current injected into the gate by the substrate also needs to follow Increase, the multiple of increase is the ratio of gate to gate oxide area, amplifying the damage effect, this phenomenon is called "antenna effect". In the case of gate implantation, the sum of the tunneling and ionic currents equals the total electron current in the plasma. Because the current is very large, even without the amplification effect of the antenna, as long as the field strength in the gate oxide can generate tunneling current, it will cause plasma damage. In normal circuit design, the gate terminal generally needs to be opened through polysilicon or metal interconnects to be the functional input terminal, which is equivalent to introducing an antenna structure on the weak gate oxide layer, so in normal tape-out and WAT monitoring The electrical test and data analysis of the single-tube device carried out at the time cannot reflect the actual plasma damage in the circuit. The oxide layer continues to be thinned to below 3nm, and the problem of charging damage is basically no longer considered, because for the oxide layer with a thickness of 3nm, the charge accumulation is directly tunneling through the barrier of the peroxide layer, and no charge defects will be formed in the oxide layer.

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Research on the reasons for the enhancement of Raman scattering fluorescence of diamond by plasma treatment

Research on the reasons for the enhancement of Raman scattering fluorescence of diamond by plasma treatment

Research on the reasons for the enhancement of Raman scattering fluorescence of diamond by plasma treatment: Fluorescent labeling is a very effective detection method for biomedical biosensing, material science, etc. Traditional organic fluorescent dye molecules such as rhodamine, fluorescein, acridine, and cyanine are prone to agglomeration (micron scale) and are not easy to enter cells. Fluorescein-based labels are prone to energy transfer with similar species, and the fluorescence signal decreases as the labeling amount increases, resulting in self-quenching. Diamond is both fluorescent and has no photobleaching phenomenon, high biocompatibility, non-toxicity, large specific surface area, and is easier to combine with antibodies to form fluorescent markers for targeted labeling. It is widely used in DNA nondestructive testing and immunoassays. . Integrate green fluorescent diamond nanoparticles with immune cell complexes to achieve labeling with different dyes into living cells. The nanodiamonds are attached to proteins, and the nanodiamond structures are self-organized to form a ring-shaped structure quantum, which becomes a tool for observing and understanding cells. However, the existing diamond fluorescence detection is not enough to meet all detection requirements, and it is necessary to further expand its application range by increasing the fluorescence intensity. Under the combined action of electromagnetic field enhancement and chemical enhancement, the total enhancement factor of the dye molecule is in the range of 103~104, and the molecule forms a "hot spot" in the gap, and the surface-enhanced Raman scattering and fluorescence spectrum of the dye molecule are detected. The concentration of the molecule is 10-1mol/L, which is expected to be used for the detection of biological single molecules. Photoluminescence spectra of metal surfaces using metal band theory. Compared with the plasmon resonance technology, the plasmon resonance technology is more efficient, simple and fast by simulating the increase of the distance between the fluorescent molecules by the nano-antenna array in the shape of a top triangle. Using plasmon resonance technology to enhance the fluorescence intensity of diamond nanoparticles, combining diamond nanoparticles with colloidal gold with stable performance, the fluorescence emission intensity of diamond distributed near the colloidal gold is greatly increased compared with the free state fluorescence emission intensity. The reasons for the enhanced Raman scattering and fluorescence of diamond may be: on the one hand, colloidal Au has a large specific surface area, free electrons in the particles are concentrated on the surface of the particles, and the excitation light interacts with them to form a light wave electromagnetic field on the surface of the Au particles. When the frequency of the electromagnetic field of the light wave is the same as the vibration frequency of the free electrons, the free electrons oscillate collectively, forming a strong local electric field near the metal surface, which accelerates the diamond in the excited state to release photons, thereby enhancing the fluorescence intensity of the diamond. On the other hand, from the perspective of energy transfer, when the free electrons in the metal interact with the fluorescent molecules in the excited state, the fluorescent molecules will quickly transfer energy to the free electrons. These transferred energies are released at a higher frequency than fluorescent molecules in free space, and thus, an enhancement of diamond fluorescence can be seen. The fluorescent molecules in the excited state transfer energy to the metal through the relaxation process to form plasma, and the fluorescence emitted by the fluorescent molecules without relaxation will induce these plasmas to generate radiation consistent with the radiation wavelength of the fluorescent molecules, thereby increasing the The fluorescence intensity. The fluorescence of diamond is enhanced by the interaction of the plasma formed by diamond nanoparticles and Au particles. As the mass fraction of Au increases gradually, the fluorescence intensity of diamond also increases accordingly. Plasma oscillation enhances the local electric field, accelerates the photon rate of diamond, and the energy transfer between diamond and Au, and the plasma radiation induced by fluorescent molecules are the reasons for the enhanced fluorescence of diamond.

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The advantages of plasma spraying equipment plasma surface treatment PET plastic sprayin

The advantages of plasma spraying equipment plasma surface treatment PET plastic sprayin

The advantages of plasma spraying equipment plasma surface treatment PET plastic spraying: The PET plastic pre-spraying plasma surface treatment equipment mainly provides pre-treatment for bonding, coating, sputtering and other processes in the digital industry. PET plastic plasma spraying equipment is widely used in digital products for mobile phone casings, mobile phone buttons, notebook computer casings, notebook keyboards, plastic products, etc. Widely used raw materials for printing, coating and bonding of polyethylene, polypropylene, polyvinyl chloride, polyester, polyoxymethylene, PTFE, vinyl, nylon, (silicon) rubber, plexiglass, ABS and other plastics Surface pretreatment of other processes. The materials suitable for plasma spraying equipment plasma are polypropylene (PP), polyethylene (PE), polyvinyl chloride (PVC), polystyrene (PS), high impact polystyrene (HIPS), ABS, PC , EPDM, polyester (PET, APET), polyurethane (PUL), polyoxymethylene, polytetrafluoroethylene, vinyl, nylon, (silicon) rubber, glass, plexiglass and other polymer materials and glass, ceramics. After treatment, the surface adhesion of the material is usually 55~80 dynes/cm. The shape, width, height, material type, process type, and need for online processing of these materials all directly affect and determine the solution of the entire surface treatment equipment. Plasma, the plasma surface treatment equipment before PET plastic spraying, is also called plasma spraying equipment, plasma surface grinding machine, plasma processor, etc. The plasma surface treatment equipment before PET plastic spraying can clean, activate and coat the surface of various materials to achieve the effect of thorough cleaning or modification without damaging the surface of the object. The advantages of plasma spraying equipment surface treatment PET plastic spraying: The plasma action process is a gas-solid phase dry reaction, which does not consume water resources, does not need to add chemicals, and does not pollute the environment. Adjustable plasma power, processing distance, cleaning speed for quality control. Close to normal temperature, especially suitable for polymer materials, with longer storage time and higher surface tension than corona and flame methods. There is no limit to the geometry of the objects to be processed, large or small, simple or complex, parts or textiles.

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The effect of CO2 addition on C2H6 dehydrogenation reaction under plasma plasma conditions

The effect of CO2 addition on C2H6 dehydrogenation reaction under plasma plasma conditions

The effect of CO2 addition on C2H6 dehydrogenation reaction under plasma plasma conditions: Influence of CO2 addition on C2H6 dehydrogenation under the plasma energy density of 800 kJ/mol: Compared with pure C2H6 dehydrogenation under plasma conditions, with the increase of CO2 addition in the system, the conversion of C2H6 Increase. This is due to the fact that under plasma plasma conditions, CO2 can undergo a splitting reaction with the high-energy electrons generated by the plasma: CO2+e*→CO+O, generating reactive oxygen species. The higher the CO2 concentration, the more reactive oxygen species in the system, and the C-H bond and C-C bond of C2H6 are easier to break under the action of reactive oxygen species. Therefore, the conversion of C2H6 increases with the increase of CO2 concentration. The yields of C2H2 and C2H4 show a peak shape change with the increase of the amount of CO2 added. Low CO2 concentration promotes the formation of C2H2 and C2H4, while high CO2 concentration leads to an increase in the number of reactive oxygen species, which promotes the complete breakage of the CH bond and CC bond of C2H6, and the free C free Radicals and reactive oxygen species generate CO. This shows that in the C2H6 oxidative dehydrogenation reaction, the concentration of CO2 in the system is an important parameter. If the concentration of CO2 is too low, the conversion rate of C2H6 will be low, and high-carbon hydrocarbons will be easily generated; if the concentration of CO2 is too high, the oxidation reaction of C2H6 will occur, resulting in a decrease in the selectivity of C2H4 and C2H2. Therefore, it is better to add CO2 at about 50%.

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Catalytic activities of different types of catalysts under the action of plasma atmospheric plasma

Catalytic activities of different types of catalysts under the action of plasma atmospheric plasma

Catalytic activities of different types of catalysts under the action of plasma atmospheric plasma: Atmospheric pressure plasma and catalyst co-activate CO2 to oxidize ethane. The main products are ethylene, acetylene and a small amount of methane. Of course, the by-products of ethane deradon reaction with CO2 as oxidant (CO+H2) and a small amount of water are also detectable. The catalytic activity of different kinds of catalysts under the action of atmospheric plasma is shown. , under pure plasma conditions, the conversion rates of C2H6 and CO2 are 33.8% and 22.7%, respectively, and the sum of the yields of C2H4 and C2H2 is 12.7%. When the supported rare earth oxide catalysts (La2O3/Y-Al2O3 and CeO2/Y-Al2O3) were introduced into the reaction system, the conversion of C2H6, the selectivity and yield of C2H4, the selectivity and yield of C2H2 were improved, but the CO2 Conversion rates are slightly lower. When La2O3/Y-Al2O3 and CeO2/Y-Al2O3 were used as catalysts, the yields of C2H4 and C2H2 were 19.8% and 21.8%, respectively. When the Pd/Y-Al2O3; catalyst was introduced into the plasma, the ethylene selectivity was significantly improved, and the C2H4/C2H2 ratio was as high as 7.4, but the C2H6 conversion rate decreased. This is because Pd reduces C2H2 to C2H4 and also reduces C2H4 Caused by C2H6. The above experimental results show that the rare earth oxide catalyst is beneficial to improve the conversion rate of C2H6 and the yields of C2H4 and C2H2, while Pd/Y-Al2O3 is beneficial to the generation of C2H2. Note: The reaction conditions are catalyst dosage of 0.7ml, discharge power of 20W (peak voltage 28kV: frequency 44Hz), flow rate of 25 ml/min, and feeds of C2H6 (50vol.%) and CO2 (50vol.%).

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