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What are the factors affecting the coating uniformity of vacuum coating equipment

What are the factors affecting the coating uniformity of vacuum coating equipment

Vacuum coating is more complex, the uniformity of the thin film theory is: bao hou of symmetry can also understand for surface roughness on the limits of optical thin film (namely 1/10 light wavelength, about 100 a), vacuum coating proportions are very good, so the surface roughness can be easily controlled in visible wavelength of 1/10 category, in other words the vacuum technology strength is no problem for thin film coating. Unity on chemical composition: that is to say, in the film the chemicals of atoms is not large, easy to form the asymmetrical features, if the plating process is not reasonable, so the surface is not Sitio3, may be other chemical proportion, the plating is not ideal in the organic chemical composition, it is also a vacuum coating technology will encounter more difficult things. Lattice uniformity: this determines that the film is single crystal, polycrystal, amorphous, is a hot topic in vacuum electroplating technology. Vacuum deposition can be divided into two categories: evaporation deposition and sputtering deposition, including vacuum ion volatilization, magnetron sputtering, MBE molecular structure beam ductility, gel solution gel method, etc. The key to the uniformity of thin-thickness lies in: lattice matching degree of material and sputtering target, outer surface temperature, evaporation speed and power, vacuum degree, coating time and thickness degree. The symmetry of crystals is influenced by the following factors: lattice match, temperature, and rate of evaporation. For the sputtering coating, it can be simply understood as electronic devices or high-energy laser sputtering target material. The surface parts are splashed in the form of atomic clusters or ions and deposited on the surface of the substrate to produce thin films. Sputtering coatings are divided into several types, and the difference from evaporation coatings depending on the sputtering speed will become one of the main parameters. The composition of the film in the sputtering coating is easy to maintain, but the atomic uniformity is weak and the crystal direction control is general. The influencing factors are: target and substrate matching degree, low pressure coating atmosphere, substrate temperature, laser output power, pulse frequency, sputtering time. For sputtering and substrate of different materials, the appropriate parameters are not the same. The key to the quality of equipment is whether the temperature can be controlled, whether the vacuum value can be ensured, and whether the cleanliness of the vacuum chamber can be ensured. MBE molecular beam outer edge coating technology, this is a very good way to deal with this problem, the common coating equipment in industrial production is mainly ion evaporation coating and magnetron sputtering coating.

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Influence of plasma etching on Em

Influence of plasma etching on Em

Stress transfer (SM) and low-K TDDB. When the device is working, there is current passing through the metal interconnect. Due to the momentum exchange between electrons and metal lattice, metal ions will drift under the influence of electron wind, which results in holes or hillocks in some parts of the wire. When the cavity growth leads to the increase of conductor resistance to a certain critical value or the formation of circuit break, then the electromigration failure occurs. In bulk metals, the current density is low (<104 A/cm2), and the electromigration occurs only at high temperatures near the melting point of the material. Thin film material is not, such as aluminum alloy wire deposition, due to the small cross-sectional area and has good heat dissipation conditions, the current density can be as high as 107 A/cm2, so at A lower temperature will occur electric migration. The force of the electronic wind acting on the metal ion is FEM eJ = rho Z * (7-15) Where, ρ is the metal resistivity; Z* is the effective charge of metal. Table 7.3 lists Z* values of some metal materials. A negative Z* value indicates that metal ions move towards the positive electrode. A positive Z* value indicates that metal ions move towards the negative electrode. The smaller the value of Z*, the stronger the resistance to electromigration. In the table, the Z* values of Al and Cu are negative, and both Al and Cu ions move to the positive electrode, while the Z* value of Cu is only 1/6 of that of Al, indicating that the anti-electromigration ability of Cu is far greater than that of Al. Electromigration is a mass conservation transport process. When metal ions gather, local mechanical stress on the metal and the surrounding dielectric layer will increase. This local stress increase will lead to metal ions backflow (Blech effect). For shorter wires, the Blech effect can be strong enough to counteract the drifting ions so that telephone migration is suppressed. Electromigration is mainly caused by momentum transfer and diffusion effect, and momentum transfer is proportional to the current density circulating in the metal, and diffusion effect is proportional to the temperature in the metal. At present, Black model is commonly used to describe electromigration failure, and the failure time model is TF=A0(J-Jcrit)-nexp(Ea/kBT)            (7-16) Where, A0 is the coefficient related to process and material, and the difference of A0 makes the failure time a distribution. EM generally adopts lognormal failure time distribution. J is the current density; Jcrit is the critical current density, and only when J is greater than Jcrit will electromigration occur. N is the current density index; Ea is activation energy; T is temperature; B sub B is the Boltzmann constant. The migration path of EM depends on the metal wire structure and actual process. For general logical products, aluminum alloy interconnect is used above 0.13μm, copper interconnect is used below 0.13μm. The structure and manufacturing process of the two kinds of wires are different, and the mechanism is also different. Aluminum wire in aluminum alloy interconnection structure is formed by deposition and etching. It is a two-dimensional structure with large grain size. When the wire width is less than the average size of the grain, the wire is a bamboo-like structure. The copper wire and through hole in the copper interconnection structure are formed by Dual Damascene (DD) process and CMP. They are three-dimensional structure with small grain size. Moreover, due to the introduction of the copper diffusion shield layer, there will be a metal barrier layer TAN separated at the junction between the bottom of the through hole and the lower metal. Generally speaking, the surface of aluminum interconnect is covered with a layer of oxide film Al2O3, which has a strong bonding energy with the aluminum body, so the electromigration in aluminum mainly takes place along the grain boundary. When the line width becomes smaller and presents a bambus-like structure, the lattice migration becomes the main mechanism. However, the bond between the oxide CuO on the surface of Cu and the Cu body is relatively poor, and this interface provides a high fluidity channel for the migration of copper ions. In the current typical copper interconnection process, there is a dielectric barrier layer Sicon on the upper surface of copper to block Cu diffusion and act as an etching stop layer. Therefore, electrical migration in copper structure is mainly carried out along the interface between Cu and the dielectric barrier layer Sicon. The use of plasma to clean up the autooxidation layer of copper and silicify the copper surface prior to the deposition of the dielectric barrier layer can effectively improve the EM. Coating the copper surface with an alloy that can fix the copper ions and inhibit their diffusion is another way to greatly improve the EM, such as depos

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Wafer plasma cleaning machine source manufacturers

Wafer plasma cleaning machine source manufacturers

Wafer cleaning is divided into wet cleaning and dry cleaning, plasma cleaning belongs to the latter, mainly used to remove invisible surface contaminants on the wafer surface. In the process of cleaning, first put the chip in the vacuum reaction chamber of plasma cleaning machine, and then pumping air into vacuum state, after reaching a certain degree of vacuum, introducing the reaction gas, the reaction gas ionization plasma formation, and the chip surface, chemical and physical reactions between the volatile substances was siphoned off, make the chip surface clean water. A plasma cleaning machine for cleaning wafers: 1-1: Plasma cleaning of wafers is performed in cleanrooms of class 1000 and above, which requires extremely high particles. Any excessive particles can cause irreparable defects in the wafer. Therefore, the cavity of the plasma cleaning machine must first be aluminum, rather than stainless steel; The sliding part of the bracket where the wafer is placed should be made of materials that are not easy to produce dust and be corroded by plasma. Electrodes and brackets are easy to remove and maintain. 1-2: The electrode spacing, layer number and gas path distribution in the reaction chamber of plasma cleaner have great influence on the uniformity of wafer processing, and these indexes need to be optimized through continuous experiments. 1-3: In the process of plasma cleaning, there will be a certain amount of heat accumulation. It is necessary to keep the temperature of the electrode plate within a certain range, so the electrodes of the plasma cleaning machine are usually cooled by water. 1-4 The relatively high capacity of the multielectrode plasma cleaner allows multiple wafers to be placed on each bracket as needed, making it ideal for the removal of lithographic substrates for 4 "and 6" wafers used for discrete semiconductor devices and power electronic components. Two, plasma cleaning machine for wafer level packaging pretreatment: 2-1: WaferLevelPackage(WLP) is an advanced chip packaging method, that is, after the whole wafer production is completed, directly on the wafer packaging test, and then cut the whole wafer into a single core; The electrical connection uses copper bumps instead of lead bonding, so there is no lead bonding or glue filling process. 2-2: The purpose of wafer level packaging pretreatment is to remove the surface inorganic, reduce the oxide layer, increase the surface roughness of copper and improve the reliability of products. 2-3: Due to the needs of production capacity, there will be significant differences in the design of vacuum reaction chamber, electrode structure, airflow distribution, water cooling device, uniformity and other aspects. 2-4: After the chip is made, the residual photoresist cannot be wet-cleaned, but can only be removed by plasma. But the thickness of photoresist can not be determined, the corresponding process parameters need to be adjusted.  

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How is the plasma formed in the plasma cleaning machine

How is the plasma formed in the plasma cleaning machine

Plasma cleaning machine can be generally divided into atmospheric (atmospheric pressure) plasma cleaning machine and vacuum (low pressure) plasma cleaning machine, equipment can be used to improve the adhesion and so on. The former discharges under normal pressure in open space or semi-closed state, while the latter requires vacuum to form low pressure to produce glow in fully closed space. No matter what form, the formation process of plasma is basically the same from the microscopic analysis. When material from low energy aggregation state into a high-energy aggregation state, from the external supply of energy (such as temperature, radiation, etc.), electric field, from solid to liquid or from liquid to gas, each particle needs 0.01 eV (1 eV = 1.6022 x 10-19 joules) of energy, when the gas absorbs energy from the outside, further further thermal motion of molecules, molecular dissociation into atoms, get enough energy of the electrons in atom, from electronic and become a free electron. Gas phase ionization, gas phase ionization contains a large number of electrons, ions, as well as some neutral particles (atoms and molecules), in which the number of charges of electrons and ions is almost equal, macroscopically or on average are neutral. Use water as an example: At temperatures below 0℃, water will appear to be a solid state, "ice"; At a temperature of 0℃ to 100℃, water will turn into a liquid, that is, "water"; At temperatures above 100℃, water changes into a gas, or steam. Heated to tens of thousands of degrees, matter will enter a fourth state - plasma! Atmosphere (atmospheric) plasma cleaning machine is a kind of anhydrous oil-free compressed air (CDA), and other gas formed by spraying a electrode plasma device, vacuum (low pressure) plasma cleaning machine is vacuum reaction chamber first, and then pass into the reaction gas, keep to a certain degree of vacuum in the electrode electricity, formation of high frequency high voltage electric field, inspire gas discharge device.

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The function of plasma cleaning machine

The function of plasma cleaning machine

Plasma cleaning machine is a new high-tech technology, the use of plasma can achieve the traditional cleaner can not achieve the effect, such as used for material surface cleaning activation modification etching to improve hydrophilic bonding adhesion. Plasma is a form of matter, also called the fourth form of matter. Enough energy is acting on the gas to ionize it and leave it in a plasma state. The "active" components in plasma include ions, electrons, active groups, metastable stimulated nuclides, photons and so on. Plasma equipment is to use the characteristics of these active components to sample surface treatment, so as to achieve the purpose of cleaning. Plasma cleaning machine in the generation of plasma device, is the two electrodes in a sealed container to generate electric field, with a vacuum pump to achieve a certain vacuum degree. As the gas gets thinner, the distance between the molecules and the distance that the molecules or ions are free to travel increases. They collide under the action of positive and negative pole fields to form plasma. These ions have enough activity and energy to break almost any chemical bond, leading to any chemical reaction on the exposed surface. The plasma of various gases has different chemical properties. For example, oxygen plasma has high oxidation performance, can oxidize photoresist into gas, so as to achieve the purpose of cleaning. Corrosion gas plasma has good anisotropy and can meet the needs of corrosion. Glow is generated during plasma processing, so it is called glow discharge processing. The function of the plasma cleaning machine mainly depends on the "activation" of the active particles in the plasma to remove the surface stains of objects. In terms of mechanism, plasma cleaning generally includes the following processes: inorganic gas is excited to the plasma state; Solid surface adsorption of gas phase material; Adsorptive groups react with solid surface molecules to form product molecules; Analyze the product molecules to form the gas phase; The reaction residue is separated from the surface. Plasma cleaners are characterized by their ability to handle metals, semiconductors, oxides and most polymer materials, such as polypropylene, polyester, polyimide, PVC, epoxy resins, and even PTFE, regardless of the type of substrate being treated. It can also clean integral, partial and complex structures. The plasma cleaner can be done independently of the processing object. The product can handle a variety of materials, whether metal, semiconductor, oxide or polymer (such as polypropylene, polyvinyl chloride, polytetrafluoroethylene, polyimide, polyester, epoxy resin, etc.), can be treated by plasma. Therefore, it is especially suitable for materials that are not resistant to high temperature and solvent. It is also optional to carry out partial cleaning on whole, partial or complex structure of the material. After cleaning and decontamination is completed, the surface properties of the material itself will be improved. Such as improving the wettability of the surface, improve the adhesion of the film, in many applications are very important.

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Common faults and treatment of atmospheric plasma cleaning machine manufacturers

Common faults and treatment of atmospheric plasma cleaning machine manufacturers

Atmospheric jet plasma cleaning machine has the advantages of high cleaning efficiency, modified etching to improve adhesion and other advantages, online production, environmental friendly and so on. In today's world, people is higher and higher requirement for the quality of products, cosmetics packaging industry, electronic industry, automobile industry, new energy industry and so on all need to use air jetting plasma cleaning machine to improve the quality of the products to reduce the defective rate, therefore, atmospheric jsog plasma cleaning machine the normal operation of the UPH for each factory (capacity) plays a decisive role. Once the atmospheric jet plasma cleaning machine fails, if it can not be eliminated in time, it will bring huge economic losses to enterprises. Atmospheric plasma cleaning machine and vacuum plasma cleaning machine, mechanical structure is relatively simple, in order to ensure production efficiency, the operator must have a certain ability to operate, the common troubleshooting methods are as follows: First, when the air jet plasma cleaning machine starts up, there is no plasma ejection can be divided into two situations: 1, the LCD panel does not display, the red LED indicator light is not bright: Countermeasures: Please check whether the power supply is normal and whether the power plug is in bad contact. 2, LCD display, red LED light flash (5 times per second); Countermeasures: A. Check whether the high-voltage wire falls off or is damaged, and replace it if it is damaged; B. If there is no problem with the high voltage wire, it may be the fault of the main board. Please contact the supplier to solve it as soon as possible. Two, the atmosphere jet type plasma cleaning machine after boot, instantly stop running for a period of time, red LED indicator light slowly flashing (1 times/second) : Action: Check the pressure of the pressure gauge is normal. If the pressure is too low or too high, adjust the pressure of the pressure gauge to this range. Check whether there is air leakage at the trachea connection and whether the trachea is damaged. If it is damaged, please replace the leaky joint with the damaged trachea. Three, atmospheric jet type plasma cleaning machine discharge inhomogeneity: 1. The sprinkler head should be replaced regularly: Atmospheric jet type plasma cleaning machine plasma is in the gas ionization by the nozzle spray, long time use will cause loss, will also make the nozzle internal carbonization phenomenon, and the serious loss of the nozzle will produce particles, affect the treatment effect of products, and then affect the quality of products. 2. Replace the inner electrode regularly: The inner electrode is consumable and should be checked frequently. If the loss depth is found to be around 2mm, it should be replaced. The discharge effect of atmospheric jet plasma cleaning machine will be seriously affected if the inner electrode is not replaced in time.

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