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Influence of plasma etching on yield of LOGIC Integrated circuit in plasma equipment

Influence of plasma etching on yield of LOGIC Integrated circuit in plasma equipment

Every step from design and manufacturing to packaging is critical for the chip to perform the desired function. As the size of integrated circuits continues to shrink, the timing window of transistors continues to shrink. In the manufacture of advanced process logic integrated circuit, the process fluctuation has more and more influence on the working timing window of transistors, so the manufacturability of chips must be considered in the design of chips. When the completed layout is put into the factory, it is necessary to check it first, look for the graphics that will bring difficulties or make it impossible to produce and make reasonable adjustments. When it comes to the manufacturing stage, the yield of the chip will rise quickly for the mature complete process, and even the yield of the chip can reach the standard in a single stream. But for processes in development, yield increases can be a long process, spanning several quarters or even longer. The following introduces the concept of yield in logic IC manufacturing and the process of yield improvement, and discusses the key role of plasma etching process on yield improvement in plasma equipment.   Every link in semiconductor manufacturing may cause product failure. The manufacturing plant typically goes through hundreds of processes from the time a wafer is rolled off the production line to the time it is completed. The manufacturing plant is concerned with how many grains on a wafer meet the shipping requirements. Yield is an indicator to quantify this ability. For example, a wafer that has 1,000 grains and 900 grains that pass the electrical property test has a yield of 90%. The yield of 25 wafers in the same lot may vary due to subtle differences in location, order, etc., but there is generally no significant difference. Yield can also fluctuate with the time drift of machine parameters on the production line, and sometimes a large deviation or excursion can lead to a sudden fall of yield. Long-term stability at a high level of yield is a sign of a mature production line.   The device failure caused by process can be divided into parametric and functional failure according to the failure characteristics. Parametric failure refers to the device electrical parameter optimization and can not meet the design requirements, such as chip working frequency measurement under the rated working voltage is too low, when static beyond the rated power consumption, etc., traditionally called soft failure (soft fail), functional failure refers to the device function is lost, can't detect some electrical parameters, such as memory read/write failure, the result of logic circuit error, etc., traditionally called hard failure (hard fail).   Parametric failure is mainly related to the physical parameters of the device, such as gate size, active region size, active region doping concentration, etc. Etching is to define the device size, thickness, appearance, the key technology to the influence of parametric failure is very big, such as inadequate because the machine maintenance and prompted a large grid size deviation, tends to yield loss, functional failure are often caused by the flaws of the wafer, defects including physical on the wafer foreign bodies, chemical pollution, graphics, defects and lattice defects, etc. As a key process in semiconductor manufacturing, plasma etching in plasma equipment also has a great impact on functional failure. For example, the particles dropped from the reaction chamber on the wafer surface caused the etching to be blocked, and the insufficient etching time caused the through-hole and the sublayer metal to break up, etc. It can be seen from this that the yield improvement of LOGICAL integrated circuit can be divided into two parts: one is that the device department selects reasonable device parameters through experiments; the other is that the process department optimizes and solves various defects in the whole process; and the process integration department integrates the work of the above two parts to achieve the goal.

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Silicon carbide oxygen plasma surface treatment

Silicon carbide oxygen plasma surface treatment

Compared with other high temperature materials, silicon carbide has lower average thermal expansion coefficient, higher thermal conductivity and better ultra-high temperature resistance performance, so it has a broad application prospect in high frequency, high power, high temperature resistance, radiation resistance semiconductor devices and ULTRAVIOLET detectors. Bonding is a very important step in silicon carbide micromachining and MEMS technology, and also one of the difficult problems in manufacturing industry. As for the direct bonding of silicon carbide, the problems of mismatching of thermal expansion coefficient and electrical properties when different materials are connected under high temperature environment are solved, and the isomer of silicon carbide can be directly combined together to form heterojunction devices. Heterojunction has many advantages over homogeneous junction. For example, compared with schottky transistors, heterojunction fET can obtain lower leakage current. Heterojunction bipolar transistors can improve emission efficiency, reduce base resistance, improve frequency response, and have a wide operating temperature range.   Among them, the surface treatment is a key factor in the direct bonding and its treatment effect is good or bad will directly affect the bonding can occur, and the interface effect, after the bonding because pollutants adsorption on the chip surface, the wafer surface roughness, etc., will cause the bonding hole, and the mechanical properties and electrical properties of the chip surface varying degrees of impact. At present, the surface treatment methods of silicon carbide mainly include traditional wet treatment, high temperature annealing and plasma treatment. The traditional wet washing treatment is developed from the wet process of silicon, which mainly includes HF method and RCA method, each of which has its own characteristics. For example, the wet treatment steps are simple, but the results include pollutants like C, O, and F; High temperature treatment can effectively remove C and O pollutants, but the treatment temperature needs to be further optimized and the subsequent process compatibility is poor. Plasma treatment can effectively remove pollutants containing O and F, but improper treatment temperature and time will lead to ion damage to the surface, resulting in surface reconstruction of silicon carbide. According to the characteristics of the above surface treatment methods, the wafers were treated by wet cleaning, oxygen and argon plasma treatment, and the wafers were bonded directly with silicon carbide melting point at low temperature and low pressure by hot pressing method, and the ideal bonding effect was achieved.   Plasma surface treatment equipment treatment: further treatment of plasma in practical applications can reduce the roughness of the chip, increase the activation degree of the chip, and obtain more suitable for direct bonding. It can be seen from the theory of binding to solid surface that when there are a lot of unsaturated bonds on the surface of the chip, the foreign is easy to bond to it. The surface hydrophilicity and adsorption properties of the chip can be changed by plasma treatment. Plasma surface excitation technology only changes the surface layer of the chip, but does not change the mechanical, electrical and mechanical properties of the material itself. The plasma treatment method has the characteristics of no pollution, simple process, fast speed and high efficiency. After many experiments, specific schemes of oxygen and argon treatment were obtained, and they were successfully applied in the subsequent bonding process. Oxygen and argon are polymerized gas, plasma interacts with silicon dioxide layer on the surface of the wafer, the activity of these atoms and high energy electron destroyed the original si-o bond structure, make it a key bridge, surface activation energy and leads to the electronic combination of excited atoms and can move to a higher, make its surface there are a lot of hanging key, and these key overhang and combined with OH groups form, form a stable structure. After the surface of SI-OH is soaked in organic or inorganic alkali and anneal at a certain temperature, the bonding bond is dehydrated and polymerized to form silicon-oxygen bond, which enhances the surface hydrophilicity of the chip and is more conducive to the bonding of the chip. The hydrophilic wafer surface is superior to the hydrophobic wafer surface in spontaneous bonding.

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Plasma cleaning machine gas action

Plasma cleaning machine gas action

Before using the plasma cleaning machine to clean the object, the object and dirt should be analyzed first, and then select the corresponding gas. According to the action principle of plasma, the selected gases can be divided into two types, one is hydrogen, oxygen and other reactive gases, among which hydrogen is mainly used to clean oxides on the metal surface for reduction reaction. The oxygen introduced by the plasma cleaner is mainly used to clean the organic matter on the surface of the object.   The other is plasma cleaner filled with argon, helium, nitrogen and other non-reactive gases. Nitrogen plasma treatment can improve the hardness and wear resistance of the material. Argon and helium are stable, and the discharge voltage is low (the ionization energy of argon atom is 15.57eV), and metastable atoms are easy to form. On the one hand, the plasma cleaning machine USES the physical action of its high-energy particles to clean the objects that are easy to be oxidized or reduced. Ar+ bombarding dirt forms volatile dirt, which is removed by vacuum pump to avoid the reaction of surface substances. On the other hand, metastable atoms are easily formed by argon, and then charge conversion and combination occur when they collide with oxygen and hydrogen molecules, forming oxygen and hydrogen active atoms acting on the surface of the object.   Although it is effective to clean the surface oxides with pure hydrogen in the plasma cleaning machine, the stability and safety of discharge are mainly considered here, and the mixture of argon and hydrogen gas is more suitable for the plasma cleaning machine. In addition, for the material easy oxidation or easy reduction of the material plasma cleaning machine can also be used to reverse the oxygen and argon hydrogen gas cleaning order to achieve the purpose of thorough cleaning.   Application examples of gas in plasma cleaning machine:   1. Degreasing and cleaning of metal surface:   Metal surface often has grease, grease, oxide layer and other organic matter. Prior to sputtering, painting, bonding, bonding, brazing, and PVD and CVD coatings, plasma treatment is required to obtain a completely clean and oxide free surface. In this case, plasma treatment has the following effects:   Oxide removal:   Metal oxides react with the treated gases. The treatment USES hydrogen or a mixture of hydrogen and argon. Sometimes two steps are used, one is to oxidize the surface with oxygen for 5 minutes, the second is to remove the oxide layer with a mixture of hydrogen and argon, or several gases can be used simultaneously.   2. Plasma etching:   In the plasma etching process, the etched object will change into a gas phase under the action of the processing gas, the processing gas and matrix materials are pumped out, and the surface is continuously covered by the fresh processing gas. The unneeded etched parts should be covered with a material (for example, chromium is used as a covering material in the semiconductor industry).   Plasmas are also used to etch plastic surfaces into which the filling mixture can be oxidized by oxygen. Etching methods such as polyformaldehyde, polyphenylene sulfide, and polytetrafluoroethylene are pretreated in their printing and bonding, and plasma treatment can greatly increase the bonding wetting area.   3. Etching and ashing:   PTFE etching:   Teflon cannot be printed or bonded without treatment. It is well known that active alkali metals can increase adhesion, but this method is not easy to master and the solution is toxic. Using the plasma method can not only protect the environment, but also achieve better results. The plasma structure can enlarge the surface and form an active layer on the surface, so that PTFE can be better adhesive printing.   Etching of PTFE mixture:   The PTFE mixture must be etched very carefully to avoid overexposure of the filler, thereby weakening adhesion. The treated gases may be oxygen, hydrogen and argon. It can be used in polyethylene, polytetrafluoroethylene, thermoplastic elastomer, polyformaldehyde, etc.   4. Surface activation and cleaning of plastics, glass and ceramics:   Like polypropylene and polytetrafluoroethylene, plastics, glass and ceramics are not polar, so these materials should be processed before printing, bonding and painting. At the same time, the glass and ceramics surface slight metal contamination can also be cleaned with plasma. Compared with combustion treatment, plasma treatment does not damage samples. At the same time, the whole surface can be treated uniformly, without poisonous gas generation, and hollow and interstitial samples can be treated.   Commonly used plasma cleaning machine gas: compressed air, oxygen, argon, argon mixed gas, CF4 and so on.

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Silicon rubber plasma processor surface treatment

Silicon rubber plasma processor surface treatment

Polymethyl methacrylate has been used as a contact lens material since the 1940s. PMMA is still widely used because of its high refractive index, suitable hardness and good bioaffinity. However, PMMA has poor hydrophilicity, which can cause long-term pannus closure and discomfort to the wearer. At the same time, its oxygen permeability is poor, serious can lead to complications. If the above shortcomings of PMMA can be overcome, its efficiency can be greatly improved. Plasma polymer of acetylene, nitrogen and water was used to coat PMMA lens surface, which can improve the hydrophilicity of material and reduce adhesion of corneal epithelial cells. The addition of organosiloxane to the polymer sandwich can improve the permeability of the material, but due to its inherent hydrophobic nature, siloxane will reduce its moisture retention. The surface hydrophobic problem of silicon-containing polymer can be treated by glow discharge generated by vacuum plasma cleaner. PMMA through vacuum plasma cleaning machine and polysiloxane binding material surface treatment, can reduce the surface carbon content, increase the oxygen content of PMMA, improve its moisture.   Contact lenses made of silicone rubber are called "soft" lenses. Silicone rubber has good permeability, soft texture, good mechanical elasticity, durability and other characteristics. Its disadvantages are too large viscosity, hydrophobic, liquid easy to permeate. Coating the silicone rubber with a layer of methane film can improve its moisture retention, reduce viscosity, reduce the permeability of liquid, and maintain its air permeability.   PMMA is a material commonly used for intraocular lens transplantation, but its contact with corneal epithelial cells can lead to damage of corneal epithelial cells. Hydrophilic monomers, such as hydroxyethyl isobutenate or N-vinyl pyrrolidone, can be deposited on the PMMA surface by grafting or irradiation with a vacuum plasma cleaning machine. Static "contact tests" between the cornea and lens of rabbits showed that PMMA surfaces without plasma treatment could cause 10-30% cell damage, while PMMA/HEMA composite surfaces could cause about 10% cell damage, and PMMA/NVP composite surfaces could cause less than 10% cell damage. Plasma deposition on C3F8, HEMA and NVP all significantly reduced corneal cell damage. In addition, adhesion ability of NVP membrane on PMMA surface was significantly lower than that of PMMA.   Plasma treatment is usually a plasma reaction that causes changes in the molecular structure of the surface or substitutions of the surface atoms. Even in the inert environment of oxygen and nitrogen, plasma treatment can produce high active groups at low temperature. In the process, the plasma also emits high-energy ultraviolet light and produces fast-moving ions and electrons that break the polymer's bonds and generate the energy needed for chemical reactions on the surface. The bulk properties of the polymer remain unchanged only if a few atomic layers are involved in the chemical process on the surface of the material. In addition, the possibility of thermal damage and deformation is avoided due to the low temperature of plasma treatment. Selecting appropriate reaction gas and process parameters can promote some specific reactions and form special polymer attachments and structures.

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Applications of plasma cleaning machine in aviation industry

Applications of plasma cleaning machine in aviation industry

Along with the development of the aviation industry, refined production consciousness gradually increase, the need for advanced plasma cleaning machine technology research to replace the traditional solvent cleaning process, so as to further ensure product cleaning effect, indirectly improve the quality of product of life and appearance, at the same time to reduce or avoid solvent volatilization, the harm to human body. By analyzing the principle of plasma cleaning machine, this cleaning method can be extended to the convenience of coating pretreatment of aviation products, surface cleaning of adhesive products and composite material manufacturing.   1. Treatment of aluminum alloy skin cover:   In aerospace manufacturing industry, the cover is made of aluminum alloy. In order to improve its tightness, the sealing part of the cover is made of NBR vulcanization process. However, after vulcanization, rubber often spills too much rubber, contaminating the surface of the coating, resulting in reduced adhesion of the coating, coating is easy to fall off after being coated. Traditional cleaning methods can not completely remove the pollution caused by the rubber, thus affecting the normal use of the lid. Plasma cleaning before coating, coating adhesion increased significantly, compared with conventional cleaning, more in line with the standard requirements of aviation coating.   2. Aerospace electrical connection:   The requirements of electrical connectors in aerospace field are very strict. The bonding effect between insulation and wire sealing body without surface treatment is poor. Even if special formula adhesive is used, the bonding effect cannot meet the requirements. In addition, if the bonding between the insulator and the sealer is not tight, electrical leakage may occur, resulting in a reduction in the voltage resistance of the electrical connector. This has seriously affected the development of domestic electrical connectors. Now the domestic specialized production aviation electric connector manufacturer is gradually promoting the application of plasma cleaning machine technology to clean the surface of the connector, through the plasma cleaning, not only can remove the surface of the connector oil, but also can enhance the activity of the surface, so that the connector glue is very uniform, the bonding effect is significantly improved. After being used by several large factories in China, the tension resistance of the electric connectors cleaned by plasma has been doubled and the pressure resistance has been significantly increased.   3. Production process of composite materials:   The high performance continuous fiber (such as carbon fiber, aramid fiber, PBO fiber, etc.) has strong thermosetting property, but also has the high quality and the high stability thermoplastic resin matrix composite material, has been widely used in the aviation, aerospace, military and other fields, has become the indispensable material. However, this kind of reinforced fiber generally has some disadvantages, such as smooth surface, low chemical activity, difficult to establish physical anchoring and chemical bonding between fiber and resin matrix, and poor interfacial adhesion, which affect the comprehensive performance of composite materials. In addition, there are also organic coatings and dust on the surface of commercial fiber materials. These pollutants mainly come from the preparation, sizing, transportation and storage process of fiber, which will affect the interface bonding performance of composite materials. Before preparation of resin matrix composites, fiber material through processing means, such as plasma cleaning on the surface etching, in removing organic coating and pollutants at the same time, the polarity and reactive group is introduced into the fiber surface, and form some active group, thus further caused by grafting and crosslinking reaction, thus by cleaning, etching, activated, grafting, crosslinking and integrated role to improve the surface state of physical and chemical fiber, so as to achieve the purpose of the interaction of reinforcing fiber and resin matrix.   4. Clean the surface of aramid fiber parts:   Aramid fiber material has low density, high strength, good toughness, high temperature resistance and easy processing and molding. It is widely used in aviation industry. In some applications, after forming, aramid still needs to bond with other parts, but its material surface is smooth and chemically inert, the surface of its formed parts is not easy to glue. In order to obtain a good bonding effect, it is necessary to carry out surface treatment, and the main surface activation treatment is plasma modification technology. The surface activity of the treated kevlar fiber is enhanced, and the bonding effect is obviously improved. With the continuous optimization of plasma processing parameters, the bonding

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Mechanism analysis of methane conversion under the action of simple plasma

Mechanism analysis of methane conversion under the action of simple plasma

At present, most researchers believe that the mechanism of plasma activated methane conversion is the free radical reaction process. Plasma discharge excites a large number of high-energy electrons. These high-energy electrons inelastic collide with methane molecules, splitting stable methane molecules into different active groups, which are coupled with each other to form C2 hydrocarbon products.   From the perspective of energy, under the action of plasma, the energy of high-energy electrons (1 ~ 20 eV) is enough to break the C-H bond of CH4 molecules (the average c-H bond energy is 4.3eV, and the dissociation energy of CH3-H is 4.5eV), thus forming CHx(x=0~3) free radicals in the gas phase. The CHx radical is then directionally recombined on solid surfaces such as the wall and electrode to form products that are desorbed from the surface. In the plasma system, the main role of plasma is to activate methane molecules to form CHx free radicals. The type and concentration of free radicals are determined by the plasma source and its energy-related parameters. The surface properties of free radicals were used to regulate the directed compound reaction of free radicals on the surface and transfer energy for the compound reaction of free radicals.   The emission spectrum in situ diagnosis technology can be excited state of atmospheric pressure plasma methane diagnosis to active species, in 250 ~ 800 nm wavelength range, can be concluded that under the action of plasma conversion of methane generated in the process of the main active species for: CH (430.1 ~ 438.7 nm), C (563.2 nm and 589.1 nm) and C2 (512.9 nm and 516.5 nm) and H (434.1 nm and 486.1 nm and 656.3 nm).   In plasma discharge areas, high-energy electrons are first produced. These high-energy electrons collide inelastic with methane molecules, thus generating a large number of active species and active free radicals, which further collide and combine to form new substances.   CH4+e*—>CH3+H+e               （3-1） CH3+e*—>CH2+H+e               （3-2） CH2+e*—>CH+H+e                 （3-3） CH+e*—>C+H+e                      （3-4） CH4+e*—>CH2+2H(H2)+e      （3-5） CH4+e*—>CH+3H(H2+H)+e    （3-6） CH4+e*—C+4H(2H2)+e            （3-7）   Coupling reactions between free radicals occur and the following products are generated (M is the third body, reactor wall, etc.) :   CH3+CH3+M—>C2H2+M          （3-8） CH2+CH2+M—>C2H4+M          （3-9） CH3+CH2+M—>C2H4+H+M     （3-10） CH +CH +M—>C2H2+M            （3-11） CH +CH2+M—>C2H2+H+M      （3-12） CH3+C+M—>C2H2+H+M         （3-13）   Since the particles with high concentration in the system are methane molecules, it is also an important way that methane molecules collide with various methyl radicals to initiate new radicals and generate various C2-hydrocarbon products.   CH2+CH4+M—>C2H6+M       （3-14） CH+CH4+M—>C2H4+H+M    （3-15） C+CH4+M—>C2H4+M            （3-16） C+CH4+M—>C2H2+H2+M    （3-17）   At the same time, the presence of C2 species in the emission spectra of methane plasma suggests that acetylene can also be generated by the following pathways:   C2+H+M—>C2H+M            （3-18） C2H+H+M—>C2H2+M        （3-19）   In atmospheric pressure pulsed corona plasma, high-energy electrons have a wide energy distribution range, so the concentration of various free radicals in methane plasma is different. The main products of the reaction are acetylene and hydrogen, while the secondary products are ethylene and ethane. CH and C were the main components of CHx free radical distribution in methane plasma, followed by CH3 and CH2.   C2H6 is the primary product of methane dehydrogenation coupling reaction, and C2H4 and C2H2 are the secondary products of further dehydrogenation of C2H6 and C2H4, respectively. Therefore, the following reaction pathways exist:   CH4→C2H6→C2H4→C2H2    （3-20）   To this end, we respectively investigates the pure ethane, ethylene in pulse corona plasma in the dehydrogenation reaction, the results showed that the pure ethane dehydrogenation reaction is the main product of the C2H4 and C2H2, pure ethane dehydrogenation reaction is the main product of C2H2, shows that under the action of plasma methane dehydrogenation coupling reaction do exist such as type (3-20) as shown in the reaction.   In the plasma, C2H6 and C2H4 generated by methane dehydrogenation will further interact with high-energy electrons to form radicals such as C2H5 and C2H3. Therefore, it can be speculated that trace C3 and C4 products are generated by methane dehydrogenation mainly in the following ways:   CH3+C2H5 +M→C3H8 + M         （3-21） CH2 +C2H6 +M→C3H8 + M       （3-22） CH3+C2H3 +M→C3H6 + M         （3-23） CH2+C2H4 +M→C3H6 + M        （3-24） C2H5 +C2H5 +M→C4H10 +M    （3-25）   The results of spectroscopic analysis show that the dehydrogenation of methane is mainly a free radical process under the action of plasma. However, in the methane d

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