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Plasma surface processor on the circuit board can be used to play what functions

Plasma surface processor on the circuit board can be used to play what functions

Plasma surface treatment machine uses plasma to treat material surface, which achieves the effect that the conventional surface treatment method can not achieve. The "active" components of plasma include ions, electrons, atoms, activated groups, excited states (metastable states), and photons. The plasma surface treatment machine uses the properties of these active components to treat the sample surface, so as to achieve the functional purposes of cleaning and surface activation. At present, the plasma surface processor has also been widely used in the circuit board. The following list of the role of the plasma surface processor in the circuit board: 1. The hole wall is concave after drilling, and the drilling dirt on the hole wall is removed. 2. Carbides produced by laser drilling of blind holes are removed. 3. When fine wire making, remove dry film residue. 4. Activation of pore wall before copper deposition in polytetrafluoroethylene. 5. Surface activation of laminates before lamination. 6. Clean up before sinking gold. 7. Activation of the surface before applying dry film and solder resistance film.

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Application of low-temperature plasma technology in environmental governance

Application of low-temperature plasma technology in environmental governance

With the development of economy, the problem of environmental pollution is becoming more and more prominent. Various forms of environmental pollution emerge one after another, seriously endangering human health and survival. To deal with environmental problems is the urgent need of human being's own security. In recent years, there have been many new and high technologies to deal with environmental problems worldwide, such as ultrasonic wave, photocatalytic oxidation, plasma, reverse osmosis, etc., among which, low-temperature plasma technology, as a new environmental protection technology with high efficiency, low consumption, high processing capacity and easy operation, has become a research hotspot at home and abroad in recent years. In the ultrafine powder production, the waste gas processing, metallurgical refining, corrosion and material surface treatment, ozone production and other fields, the low temperature plasma technology has been widely used in industrial applications, with low temperature plasma processing environment governance applied to the study of organic pollutants in waste gas and waste water, but this aspect of the current techniques are not mature industrialized scale. 1. Definition and characteristics of low-temperature plasma. Plasma is a kind of ionized gas with ionization degree greater than 0.1% and equal positive and negative charges. It is composed of electrons, ions, neutral atoms, excited state atoms, photons and free radicals. The number of charges of electrons and positive ions is equal. Generally, it is electrically neutral, which is different from the three states of matter (solid, liquid and gas), and it is the fourth form of material existence. Its main features are: (1) There is no net Coulomb force between charged particles; (2) is an excellent conductive fluid, using this characteristic can produce magnetic fluid power generation; (3) Charged particles without net magnetic force; (4) Ionized gas has a certain influence on temperature. It is generally believed that low temperature plasma equipment can be divided into high temperature plasma and low temperature plasma according to the energy state, temperature and ion density of the system. The ionization degree of the former type is close to 1, the temperature of each particle is basically the same, the system is in a thermodynamic unbalanced state, the temperature is generally more than 5×104K, and it is mainly used to study the controlled thermonuclear reaction. The latter kind of particles have different temperatures, the temperature of electrons is much higher than that of ions, the system is in a thermodynamic unbalanced state, and the macroscopic temperature is low. Generally, the plasma generated by gas discharge belongs to this kind, which is closely related to modern industrial production. 2. Low-temperature plasma pollution reduction mechanism, the energy transfer of plasma surface processor in the process of plasma chemical reaction, the energy transfer of plasma chemical reaction is roughly as follows: (1) Combination of electric field + electron → high-energy electron; (2) high energy electron + molecule (or atom)→ active group (excited atom, excited group, free group); (3) active group + molecule (atom)→ product + heat; (4) active group + active group → product + heat. From the above process, it can be seen that electrons obtain energy from the electric field, and the molecules or atoms that obtain energy are excited, and the energy is transferred to the molecules or atoms through excitation or ionization. At the same time, some molecules are ionized to form active groups. These active groups then collide with molecules or atoms, active groups and active groups to produce a stable product and heat. In addition, the electrons of halogen and oxygen can also be compatible with high-energy electrons.

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The plasma processor has been used for many years. Do you understand the cleaning of the plasma processor

The plasma processor has been used for many years. Do you understand the cleaning of the plasma processor

Plasma is a state of being of matter, usually in three states: solid, liquid, and gas, but in some special cases, it may also exist in a fourth state, for example, material from the surface of the sun, and material from the ionosphere of the earth's atmosphere. This kind of material in the state is called the plasma state, which is the fourth state of matter, said so much do not know whether to have a general understanding of the plasma in the plasma processor cleaning. The technology of plasma processor, which originated in the early 20th century, has been used more and more widely with the rapid development of high and new technology. The cleaning of plasma processor mainly relies on the "activation effect" of active particles in plasma to achieve the purpose of removing stains on the surface of objects. In terms of mechanism, plasma cleaning generally includes the following processes: inorganic gases are excited in plasma state; Gas phase material adsorbed on solid surface; Adsorptive groups react with solid surface molecules to form product molecules; The gas phase is formed by molecular resolution of the product. Reaction residue off the surface. Plasma processor cleaning technology is characterized by both process base material type of object, all can handle, for metal, semiconductor and oxides and most of the polymer materials, such as polypropylene, polyester, polyimide, poly (ethyl chloride, epoxy, ptfe, even can handle very well, and can be comprehensive, localized, and cleaning of complex structure. With the development of science and technology, the more sophisticated the better the various equipment, the higher the requirements for cleaning, especially in the chip manufacturing, image and display and other fields, such as mobile phone camera, chip, capacitor screen, flexible screen, etc., the higher the requirements for the cleaning of trace pollutants on the surface, even can not remain nanometer particles. Because the volume of pollutants is small and the composition is complex, the general surface requirements will not have organic residues, which can better reflect the role of the plasma processor cleaning machine. The plasma generated by the plasma processor cleaning machine can break the molecular chain of organic pollutants, so that the elements in the molecular structure are separated from the matrix, the separated elements react with the free radicals in the plasma, and the molecules are reorganized to form harmless gas emissions, so as to realize the surface cleaning.

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What is the white smoke caused by domestic plasma surface treatment machine

What is the white smoke caused by domestic plasma surface treatment machine

In the aviation, aerospace and electronics industry, domestic plasma surface processor has a wide range of applications, such as the bonding of high polymer materials or metal, plastic components electroplating, metal or non-metal materials potting pretreatment, etc.. It can replace the traditional process, improve the treatment effect and accelerate the production speed. What is the cause of the white smoke from the domestic plasma surface treatment machine? Plasma surface treatment machine in line with the electrical work standard, according to the needs of the actual use of users, silicone resin, epoxy plastics and other polymers and metal materials for a reasonable ratio of parameters, so that it can meet the requirements of users. Some users said that after 40 minutes of cleaning of about 20nm thick polymer by domestic ion surface treatment machine, a stream of white smoke came out of the reaction chamber. Fumes are irritating and toxic. It was first confirmed that the white fumes were coming out of the reaction chamber and not from the ion surface treatment itself. Whether there is white oxygen in the ion surface treatment case, if so, make sure that when the ion surface treatment case is in the boot state, the vacuum pump is off, the reaction chamber is open, and there is no sample, if so, there is an electronic fault, and there may be electronic components burned out. Otherwise, other problems may arise. Assuming the electronics are intact, if the washer and vacuum pump are turned on and the sample is not placed in the engine room there is white smoke? If white smoke is still coming out, it may be due to dirt on the reaction compartment and door walls that needs to be removed with isopropyl alcohol or a similar detergent. If the domestic ion surface treatment machine runs under the vacuum state and produces plasma, then any gas or dirt will sweep the reaction chamber; Vacuum tubes, vacuum vents have flue gas, which is produced by pumping air rather than by the plasma cleaner itself. If you see white flue gas in the exhaust port of the vacuum pump, it may be the oil mist discharged from the pump, which has nothing to do with the ion surface treatment machine itself. This problem can be solved by replacing the appropriate oil mist filter. The actual processing process is complex and changeable, non-professionals do not operate easily, more plasma equipment detailed information solutions are welcome to inquire.

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Application of COGLCD Plasma Cleaning Machine in COG-LCD Production Process

Application of COGLCD Plasma Cleaning Machine in COG-LCD Production Process

The COG assembly production process of liquid crystal display is to paste the naked IC on the ITO glass, and make the pins on the ITO glass and the pins on the IC connect and conduct by using the compression and deformation effect of the golden ball. With the continuous development of fine line technology, Pitch 20μm, 10μm products have been developed. As the surface cleanliness of ITO glass is required to be very high, the weldability of ITO glass is required to be very high. It must be soldered firmly, and no organic or inorganic substances can be left on the surface to prevent conduction between ITO glass electrode and IC Bump. Therefore, the cleaning of ITO glass is very important. In the current ITO glass cleaning process, the application of COG-LCD production process, we are trying to use a variety of cleaning agents (alcohol cleaning, ultrasonic cleaning) to clean the glass, but due to the introduction of cleaning agents, will cause other related problems due to the introduction, therefore, to explore a new cleaning method has become the direction of the manufacturers. It is an effective cleaning method to use COGLCD plasma cleaning machine to clean the surface of ITO glass step by step. In the plasma cleaning process of liquid crystal glass, the activation gas used is oxygen plasma, which can remove oil dirt and organic pollutant particles, because oxygen plasma can oxidize organic matter and form gas emissions. The need to pay attention to the problem is that after removing particles, need to add a device in addition to static electricity, the cleaning process: ejection - oxygen plasma - eliminate static electricity. After the dry cleaning process of LCD and its electrode terminal ITO, the cleanliness and adhesion have been greatly improved. The cleaning procedure is as follows: 1. Equipment: COGLCD plasma cleaning machine; Gas: Oil-free air drying. 2. Put 20PCS IC Bump on (stick to the yellow tape) and use Plasma for cleaning. Then heat treat the IC on the LCD after normal heat treatment. 3. Display the unsealed silica gel products on the product with 23PCS, conduct Plasma cleaning, and then detect and observe the display of the white strip. 4. Take 2pcs of products with OK display, 1pcs of ITO exposed in the same position will be stained with sweat (without gloves, directly wear finger cover, after about 15 minutes, the finger cover will be stained with sweat), and then power on the products together to observe the corrosion situation (workshop temperature control range: 22℃+/-6℃, humidity control range: 55%+/-15%). Plasma cleaning of product A; Product B was not cleaned. After continuous energized (200 hours) test, the results are as follows: product A has one missing line when energized for 71.5h, and the second missing line when energized for 77H; However, product B showed four lines missing when it was powered on for 4.5h. From the above experimental data, it can be seen that: 1. Plasma cleaning has no adverse effect on the product; 2. Plasma can clean the trace conductive dirt on the surface of ITO and improve the white strip phenomenon caused by leakage; 3. COGLCD plasma cleaning machine plasma cleaning can reduce the corrosion speed and corrosion degree of contaminated products. According to the above principle analysis and experimental data, the plasma cleaning machine can be used to clean liquid crystal glass and COG-LCD semi-finished glass assembly production process, in order to improve product quality and stability.

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Plasma plasma processing system manufacturers indium gallium arsenic etching

Plasma plasma processing system manufacturers indium gallium arsenic etching

The main use of indium gallium arsenic is as a channel material, and it is considered as the future channel material of nanometer NMOS. On the one hand, indium gallium and arsenic will form a layer or multiple quantum well transmission in the channel, and its mobility can reach the level of single crystal, and the main restriction will appear at the contact interface. The advantage of this for etching is a single purpose, which is to define the pattern of the channeling material. In the early stage, CCl2F2 gas was used for etching. However, due to the reasons of selective ratio and plasma damage to the underlying film, two combination gas plasma etching schemes, CHF3+BCl3 and CF4+BCl3, were developed. In effect, both schemes can achieve a faster etching rate and a higher selectivity ratio to Inalas, and are easier to achieve at low voltage and high RF power. The difference in etch rate between two similar materials is due to the difference in volatilization of reaction products. Both CaCl3 and AsCl3 are relatively volatile, while AlCl3 is more difficult to volatilize, which will affect further etching. The amount of fluorine will affect the etching rate of Inaias. The increase of fluorine gas flow rate will significantly change the selection ratio of indium aluminum arsenic and indium gallium arsenic. Gas combinations using CHF3 and BCL3 or CF4 and BCL3 options can more than double the ratio. The influence of the pressure and radio frequency power of the two gas combinations on the etching rate: the higher the pressure, the lower the etching rate of the two combinations, which is consistent with our general etching law, because the increase of pressure will increase the probability of plasma collision and annihilation, reduce the energy of plasma, and lead to the decrease of the etching rate. In general, the higher the RF power, the faster the etch rate, because the dissociation rate of the plasma will be higher. These methods of etching are more common, more thoroughly studied and reported a lot. In contrast, the etching details of indium gallium and arsenic in the fabrication of the fet have not been disclosed, despite reports of indium gallium and arsenic. Judging from the gas used, it should be a combination of chemical reaction and high-speed bombardment. BCl3 is easy to react with various elements in indium gallium and arsenic, while Ar may be the source of bombardment. From the defined figure, there is an inclined side wall topography, but the overall height is high. The newly developed neutral particle etching has also been applied to the etching of indium gallium and arsenic. The research group in Japan has done more research on the neutral particle etching of group 35 compounds. Not only did they use this very advanced etching technique, but they also used organic materials as the etching mask. The original organic mask material is soft and easy to deform, collapse and produce defects under the bombardment of plasma, which leads to the deviation of graphic definition. This is also the reason why the processing of integrated circuits gradually changes from soft and single mask material to hard and multi-layer mask material. But paired with neutral particle etching, softer organic masks are available again. Because the neutral particles mainly rely on dry chemical etching, the electron temperature is very low, which can effectively protect the mask material. After indium gallium arsenic and gallium arsenic were repeatedly subjected to molecular beam epitaxy to form a multilayer structure, a polyethylene glycol containing an iron compound (an iron oxide containing water) was coated on the surface of the multilayer structure. Ferric compounds exist as the "nucleus" of organic materials, which can effectively control the distance between different nuclei. After completion, hydrogen plasma is used to remove the outer protective shell of the nucleus and then the oxygen in the oxide is removed to form isolated iron nanoparticles, which are distributed evenly and equidistant on the surface as a mask for etching. In order to prevent the secondary oxidation before etching, the hydrogen plasma can be processed before etching. The pattern is defined with chlorine neutral particles to complete the deep hole etching. The method can also be used for indium gallium arsenic and gallium arsenic compound semiconductors to form holes or grooves with high aspect ratio.Because the temperature can directly affect the rate of chemical reaction, this method can be used to control the etching rate and morphology in etching. There are problems in both low temperature and high temperature. It is difficult to obtain enough nanostructures at low temperature, and the morphology of the high surface will deteriorate seriously. Only at 50℃ can the deficiencies of the two aspects be balanced. The bias is also critical to define the morphology of th

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