图片名称

NEWS

Popular Articles

Contact Us

图片名称
图片名称

Service Hotline

13632675935

CRF

TEL：13632675935

E-mail：shaobo@sfi-crf.com

Address: 1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

How is the vacuum plasma processor to remove the rust spots on the bronze ware

How is the vacuum plasma processor to remove the rust spots on the bronze ware

As we all know, bronze excavated for a long time buried underground, bronze and the surrounding environment reaction to form copper rust, can be divided into two types of harmless rust and harmful rust. Hinnocuous copper rust is also one of the reasons why people like bronze ware. It is the natural protective layer (i.e. coating) of bronze ware, which can not only protect bronze ware from corrosion, but also increase the beauty of bronze ware and make it more valuable for collection. And harmful copper rust is green powder, its harm is very serious, and will continue to spread, causing damage to bronzes. So, does the vacuum plasma cleaning machine help bronze rust removal? Today we will show you how the vacuum plasma processor is to remove the rust on the copper plate, for your reference. For those who prefer small collections, harmful rust in bronze vessels can be removed in time, and there are many options, such as physical grinding, rust remover cleaning, etc. However, if it is used improperly and operated correctly, it is easy to cause damage to the device. China will excavate a large number of bronzes every year, you can see are often some representative, well-preserved artifacts, which are also a lot of collected bronzes, these artifacts are also to do a good job of anti-rust treatment, otherwise it will cause batch loss. The vacuum plasma processor can remove copper rust without damaging the copper surface, and can also remove harmless copper rust. In order to protect harmless corrosion, auxiliary protection measures should be added, so it is more suitable for the application of overall removal of copper rust, such as the study of ancient bronze inscriptions and ornamentation.

MORE +
Plasma dry etching machine manufacturers gallium arsenic etching

Plasma dry etching machine manufacturers gallium arsenic etching

In addition to indium gallium arsenic, gallium arsenic is also widely expected as a semiconductor material, and the two are often used together to build high performance devices. Therefore, it is necessary for us to explore and prospect the etching technology of this kind of semiconductor. The deep hole etching of GaAs semiconductor material was carried out by using Cl2 and BCl3 mixed gases. The etching rate was 6~8um/min, the photoresistor was used as the mask material, and the selection ratio was 8∶1. Although the author claims that there is no problem with the smooth morphology of the hole as an interconnection, it is obvious that the Angle of 70℃ ~ 80℃ is difficult to win. For any process below 14nm, more new technologies and detailed studies are needed to better complete the graphic definition. In addition to being used as semiconductor material itself, gallium arsenic can be used with indium phosphide and indium gallium arsenic, gallium arsenic semiconductor can also be used with aluminum-gallium arsenic, aluminum-gallium arsenic phosphorus. This type of etching also generally has a large aspect ratio. This kind of etching generally adopts high temperature laser etching, so the graphic definition is accurate, but the roughness is large, especially sensitive to the etching gas composition and temperature. Taking into account the actual situation, the post processing process of etching is added to improve the surface roughness. The roughness of the etched line edge needs to be improved, but the straight Angle of nearly 90° has great advantages, especially when the aspect ratio reaches more than 20, it can still transmit the image accurately.The above is the introduction of the plasma dry etching machine manufacturers to the etching of gallium and arsenic, I hope to help you.

MORE +
The potential application of germanium in integrated circuits and its etching method (I)

The potential application of germanium in integrated circuits and its etching method (I)

Using germanium instead of silicon seems like an ironic twist. The transistor invented at Bell Labs in 1947 was made from plates of germanium, the element below silicon in the periodic table. Germanium was chosen because current flows through it quickly, a characteristic of transistors. But when engineers considered making integrated circuits on a large scale, germanium was ignored because silicon was easier to handle. Now, as manufacturers face the problem of silicon not being able to be miniaturized any further, germanium is being used again. The germanium circuits demonstrated by Professor Peide Ye of Purdue University and his colleagues suggest that germanium materials will be commercialized in the coming years. The tiny transistors currently made are just 14nm in diameter and are extremely tightly packed together. Further reduction in the size of transistors would pose a serious challenge to the semiconductor industry. During a panel session at the Electronics Devices Conference 2016, Intel researcher Mark Bohr said that it will be impossible to shrink silicon transistors any further in 10 years. "I'm usually more interested in new ideas," says Bohr. Germanium has good electrical properties, so the circuit speed is always better than silicon. However, engineers cannot use germanium to make compact but energy-efficient circuits based on the current production technology used in the industry, called complementary metal oxide semiconductor (CMOS) or complementary gold oxide semiconductor. The circuit made of complementary AO semiconductor adopts the transistor which transmits negative charge at the same time, namely the negative electric field effect transistor. Transistors that transmit positive charges, known as positive field effect transistors, "but germanium transistor technology with negative field effect is hitting a bottleneck". Ye Peide proposed a new design of germanium transistor with negative electric field effect to improve its performance significantly. Saraswat was instrumental in bringing germanium back into the spotlight. In 2002, he published a paper showing that germanium transistors were two to three times as high as silicon transistors. "We have done the basic science work and now we are focusing on the basic engineering," Saraswat said. Other materials available, such as carbon nanotubes or multielement composite semiconductors, are promising to replace silicon, but they are used in more complex ways that make them difficult to use in the chip industry. Chip makers, by contrast, have used germanium for positive field effect silicon transistors.

MORE +
Plasma and material interaction of rotary bottle plasma cleaning equipment

Plasma and material interaction of rotary bottle plasma cleaning equipment

Rotating bottle plasma cleaning equipment often uses different process gases in practical applications. The generated plasma contains a large number of active particles and high-energy particles. The interaction between these particles and the surface of solid materials is of great significance to the plasma itself or solid materials. The particles in the rotary bottle plasma cleaning equipment transfer energy to the surface of the solid material, while the plasma carries away large amounts of impurities. For solid materials, due to the bombardment and energy transfer of these high-energy particles, a variety of physical and chemical reactions take place on the surface of solid materials. Therefore, the study of the interaction process between plasma and the surface of solid materials is very beneficial to the exploration of material surface modification, new materials and new technologies. Bottles of plasma cleaning equipment and all kinds of solid materials on the surface of the effect depends on the physical parameters of plasma, the kinds of solid materials, surface structure and morphology of factors, but plasma and effect on the surface of the solid material in the surface layer of only a few to dozens of nanometer (nm depth), so as not to damage the intrinsic characteristics of matrix; It can also make the material surface have new practicality. Adsorption and desorption of plasma are very important, and in many cases one or the other often determines the mass of the surface. Adsorption results from the attraction between the incident body and the surface. There are two kinds of adsorption: physical adsorption produced in the weak interaction between molecules and the surface, physical adsorption is exothermic, physical adsorption and surface binding energy is very weak, can quickly spread from the surface after adsorption; When the adsorption atoms or molecules and surface atoms form chemical bonds, that is, the formation of chemical adsorption, this process is called the strong exothermic process.

MORE +
Rotate bottle plasma glasses cleaning machine how to prevent goggles fog

Rotate bottle plasma glasses cleaning machine how to prevent goggles fog

Swimming is a healthy aerobic exercise, to relax the body and mind, burning fat, enhance physical fitness and so have great benefits. Swimming without the preparing work before swimming, choose the goggles is certainly one of the indispensable items, swimming goggles can make the person get superior underwater vision, can prevent the pool water starting again at the same time, have the effect of maintenance eyes, often some goggles will appear the phenomenon of mirror fog, turn plasma glasses bottle cleaning function to deal with the problem very well, then turn to a bottle of plasma glasses cleaning machine is how to deal with? In life, we may touch a lot of small tricks to prevent fog, almost all are coated with a layer of other substances in the mirror, such as foam, anti-fog spray, in order to achieve the effect of anti-fog. Want to remind is, do not mix as far as possible, if the material enters the eye to clean in time, the situation is serious trouble, here do not recommend us to try here. How to intuitively distinguish the treatment effect of rotating plasma glasses cleaning machine on the surface of goggles? Below we through the lens plasma cleaning machine treatment before and after the change of the appearance of the dyne value to understand. The dyne value of the lens not treated by the plasma cleaning machine was measured, and it was found that its dyne value was less than 36 dynes and the energy of the mirror surface was low. If the lens was directly modified at this time, the effect would be poor. The dyne value is measured after being processed by the rotating plasma glasses cleaning machine. The dyne value is greater than 60 dyne, which can improve the mirror surface. At this time, it is easier to form a uniform and durable anti-fogging film and improve the yield of good products by applying coating. Through the comparison of several experimental data, we can draw the following conclusion: after the surface of the goggles is treated by the rotating plasma glasses cleaning machine, the surface activity is greatly improved, the adhesive performance is also greatly improved, and the anti-fogging film can be formed evenly and not easy to fall off, thus solving the problem of fogging in the use of the goggles.

MORE +
Application of Plasma Cleaning BGA Packaging Process

Application of Plasma Cleaning BGA Packaging Process

The substrate or intermediate layer is an important part of the BGA package and can be used for impedance control and inductor/resistor/capacitor integration in addition to interconnection wiring. Therefore, the substrate is required to have high glass conversion temperature rS(about 175~230℃), high dimensional stability and low moisture absorption performance, and has good electrical properties and high reliability. In addition, there is a high adhesion between the metal film, the insulating layer and the substrate medium. 1. Lead bonding PBGA packaging process: 1) Preparation of PBGA substrate The two sides of the BT resin/glass core plate were pressed into extremely thin copper foil (12~18 microns thick), and the metal was drilled and metallized through holes. Using traditional PCB process, guide tape, electrode and welding zone array mounted with solder ball are made on both sides of the substrate. Then a solder mask is added to make a pattern of exposed electrodes and welds. In order to improve production efficiency, a substrate usually contains more than one PBG substrate. 2) Packaging process WAFer thinning → wafer cutting → chip bonding → plasma cleaning → lead bonding → plasma cleaning → molded packaging → solder ball assembly → reflow soldering → surface marking → separation → inspection → test packaging Silver-filled epoxy binder is used to bond the IC chip to the substrate, and then the connection between the chip and the substrate is realized by gold wire connection, and then the chip, welding line and pad are protected by molding encapsulation or liquid glue pasting. A specially designed solder ball 62/36/2Sn/Pb/Ag or 63/37/Sn/Pb with a diameter of 30mil(0.75mm) with a melting point of 183℃ is used for reflow soldering in a common reflow furnace. The high temperature processing temperature cannot exceed 230℃. Substrates are then centrifugally cleaned with a CFC inorganic cleaner to remove residual solder and fiber particles, followed by marking, separation, inspection, testing, and packaging. The above is the lead bond PBGA packaging process. 2. FC-CBGA packaging process: 1) Ceramic substrate Because the FC-CBGA substrate is multilayer ceramic substrate, its production is difficult. Due to the high wiring density of the substrate, narrow spacing, and many through holes, as well as the substrate coplanar requirements for higher reasons. The main process is: first, the multi-layer ceramic sheet substrate is co-fired into multi-layer ceramic metallized substrate at high temperature, and then the multi-layer metal wire is made on the substrate, and then electroplating. In the process of CBGA assembly, the CTE mismatch between the substrate, chip and PCB is the main cause of product failure. In order to improve this situation, in addition to the use of CCGA structure, another ceramic substrate can also be used - HITCE ceramic substrate. 2) Packaging process The preparation of the flanges: groan cut → groan chip flip and reflow soldering → bottom filling groan heat transfer grease, sealing distribution of solder + cap bucket assembly solder ball → reflow bucket marking + separation groan → inspection → test packaging 3. Packaging process of lead connection TBGA: 1) TBGA loading TBGA is usually made of polyimide material. Manufacturing, the first two sides of the copper copper coating, and then nickel plating, gold plating, and then punching, through the hole metallization, made into graphics. Because in this lead connection TBGA, the packaging heat sink is the addition solid of the packaging and the core cavity base of the shell, the carrier tape should be bonded to the heat sink with pressure-sensitive adhesive before packaging. 2) Packaging process WAFer thinning → wafer cutting → chip bonding → cleaning → lead bonding → plasma cleaning → liquid sealant filling → solder ball assembly → reflow soldering → surface marking → separation → inspection → test → packaging

MORE +
< 1...646566...132 > proceed page
图片名称

CRF

National Service Hotline

136 3267 5935

Contact Email

shaobo@sfi-crf.com

Address:1303, Building 3, Manjinghua Science and Innovation Workshop, No.6 Songjiang Road, Songgang Street, Bao'an District, Shenzhen, China.

图片名称

Add WeChat
Get related information

Links

Apply to exchange friend links

Copyright © Shenzhen Chengfeng Smart Co.

京ICP备10002622号-38

粤公网安备 44030602005200号

图片名称

Cheng Feng Zhi Zuang a focus on plasma research and development for 20 years

We

The services of

Inquire for free sample testing

1-to-1 program customization

24-hour online after-sales service

Source manufacturer

Get the program
%{tishi_zhanwei}%
图片名称

Scan the code for information

诚峰智造