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Atmospheric plasma surface treatment equipment

Atmospheric plasma surface treatment equipment

In atmospheric plasma technology, compressed air or other gases are injected and ionized by high pressure excited gas at atmospheric pressure to become plasma. The plasma is ejected from the nozzle. Atmospheric plasma surface treatment equipment is the use of plasma nozzle containing active particles to activate and precision cleaning its material. In addition, the surface scattering of adhesive particles can be removed by accelerating the activation injection by gas. The process parameters such as the processing speed and the distance to the substrate surface will have different effects on the treatment results.   To make all kinds of plastics and other products, have better spraying, printing or bonding quality, product surface treatment is necessary. Conventional surface treatment processes include mechanical grinding, chemical solvent, flame, corona and other methods. Each of these technologies has its own technical advantages and characteristics, but there are some limitations in the process and application.   Atmospheric plasma treatment system process is a rapidly developing high-tech online surface treatment technology. Compared with traditional process, online treatment effect, operation safety, treatment cost, application adaptability and environmental protection have been significantly improved. Atmospheric plasma generation and action on the surface of the material to achieve the cleaning effect. First of all, what is plasma? Solid, liquid and gas are three common states of substances. The process of substances from solid to liquid and then to gas is a process of gradual increase of molecular energy from the microscopic level. As we continue to inject energy into the gas, the molecules in the gas move even faster, forming a new form of ions, free electrons, excited molecules, and high-energy molecules, known as the fourth "plasma" state of matter.   Atmospheric plasma surface treatment refers to the surface treatment of products produced by plasma under atmospheric pressure. Stable atmospheric plasma can be produced by plasma spray gun. In the working process, air or other process gas is introduced into the spray gun, and energy is injected through the high-frequency high-voltage flow to the front end of the spray gun, and the required plasma is ejected from the front end of the spray gun. The plasma obtained for electric neutral plasma, so the scope of application is very wide, not only can be used in plastic, also can be used in metal, glass and other materials processing, atmospheric plasma cleaning machine manufacturers manufacturing equipment can also be used to deal with mobile phone cover.   Plasma treatment has three main effects on the surface of materials: cleaning the surface, removing organic and inorganic pollutants; Activate the surface and increase the surface energy of the material; Eliminate static and so on. Plasma cleaning material surface can not only remove inorganic pollutants such as dust, but also decompose organic pollutants such as surface grease. The surface activation of plastic materials is mainly through the formation of new active functional groups on the surface of the materials. Plasma can also remove static electricity from the material surface.   Atmospheric plasma treatment technology has a wide range of applications, it can be used in a variety of adhesion, spraying, printing and other processes, plastic, metal or glass material surface treatment. The resulting clean and highly active surface makes bonding, spraying and printing easier, thus improving the quality of processing, reducing processing costs and increasing processing efficiency.

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Application of plasma surface treatment technology

Application of plasma surface treatment technology

In many different fields, using the physical and chemical properties of plasma to form a dense layer or functional groups containing oxygen on the surface of materials, so as to change the surface characteristics of materials and improve their surface hydrophilicity and adhesion, has been widely used. Plasma surface treatment has obvious advantages. At present, there are more and more requirements for product treatment in the market, and more and more customized plasma surface treatment machines. The following are some characteristics and applications of plasma surface treatment.   Plasma surface treatment is an effective surface cleaning, activation, and coating treatment for a variety of materials, including plastics, metals, or glass. Plasma cleaning machine can clean the surface of the mold release agent, residues, and its activation process, can ensure the quality of subsequent bonding and coating processes, for coating treatment, can further improve the surface characteristics of the complex. By using plasma technology, the surface pretreatment of materials can be carried out efficiently according to different technological requirements.   With conventional water-based cold glue can make coated or glazed cardboard in the pasting box machine to get reliable bonding, no need to carry out local laminating, local glazing, surface grinding tangent and other processes, and no need to change different special glue for different cardboard. The use of plasma surface treatment not only improves its applicability to glue, but also eliminates the dependence on special glue to achieve high quality adhesion. At the same time, it can improve the surface spreading performance and prevent the formation of bubbles. Importantly, through plasma treatment, carton manufacturers can obtain products with lower cost, higher efficiency and more guaranteed quality.   Plasma processor technology is applied to pretreatment of plastic, aluminum, EPDM strip and other materials. The application of plasma technology in automobile industry is becoming more and more mature. In the extrusion line, plasma pretreatment can be used to pretreat plastic or elastomer materials to make them better able to complete subsequent processes, such as coating or flocking. The role of plasma treatment is to clean and activate the material, and since the plasma beam can be focused specifically on the surface area to be treated, it can effectively handle complex profile structures.   The advantages and characteristics of the plasma treatment system are as follows: even if the structure is complex, also can carry out targeted pretreatment, etc.   Plasma surface treatment technology can clean aluminum surface conveniently and environmentally. Composite films are often used in beverage or food packaging because of their good barrier properties. Aluminum foil is used in the processing of composite film as a composite barrier layer, it is necessary to add a layer of PE film on the aluminum foil to ensure that the aluminum foil will not be in direct contact with the food in the package. For thin film composite equipment, aluminum foil is treated by plasma, so it can be closely combined with PE film, the energy in the plasma, can remove a variety of pollutants from the surface of aluminum foil, such as dust, oil, etc. And the plasma processing process can fully realize the online processing mode. In practice, some users use annealing process to achieve the above effect, but compared with plasma, this kind of time and energy consuming.   The advantages and characteristics of plasma surface treatment are as follows: 1. Complete online integration capability (without interfering the original process operation), energy saving, low cost and environmental protection. 2. Do not change the mechanical properties of aluminum foil 3. Selective, partial or comprehensive cleaning can be realized. 4, aluminum foil can be double-sided processing. 5. The treatment process can be integrated in front of the winding device.

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Ceramic plasma cleaning machine

Ceramic plasma cleaning machine

The multi-layer ceramic shell brazed by Ag72Cu28 solder consists of multi-layer metallized ceramics, base and metal parts. Before entering the electroplating process, a variety of dirt, including dust, solid particles, organic matters, etc. will inevitably occur on the surface of the shell. At the same time, due to natural oxidation, there will also be a layer of oxidation. The plating surface must be cleaned before electroplating, otherwise it will affect the binding force between the coating and the substrate, resulting in peeling and foaming of the coating. Traditional removal of such pollutants, usually using toluene, acetone, ethanol and other organic solvents, but this method on the one hand is not thorough cleaning, easy to cause coating defects, on the other hand will increase production costs, causing environmental problems. Because of its uniformity, repeatability, controllability, energy saving and environmental protection, plasma cleaning machine technology has been widely used in this field.   In the process of plasma cleaning machine cleaning, oxygen into plasma containing oxygen free radicals, excited oxygen molecules and particles such as electrons such plasma with a solid surface can be divided into physical reaction (ion bombardment) and chemical reaction, physical reaction mechanisms are active particle bombardment for cleaning the surface, make the discharge of pollutants from surface, chemical reaction mechanism is O active particle oxidation of organic matter into water and carbon dioxide molecules, then cleared from the surface.   It is feasible to use O2 as the cleaning gas in plasma cleaning machine to deal with Ag72Cu28 solder. Before electroplating Ni and Au on the shell surface of Ag72Cu28 solder, plasma cleaning using O2 as cleaning gas can remove organic dirt, improve coating quality, which is very important for improving product quality and reliability, and also has a good demonstration effect for energy conservation and emission reduction.

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Polysilicon gate etching in fin-type FET of plasma Surface Treatment instrument

Polysilicon gate etching in fin-type FET of plasma Surface Treatment instrument

FinFET still uses the dual-graphics method in the planar transistor at 28nm to define gate lines and line ends. Different from the planar transistor, FinFET is a THREE-DIMENSIONAL transistor, and the polysilicon gate is across the fin. This difference leads to the difference in the etching process of the plasma surface treatment instrument. The profile morphology after polycrystalline gate etching has great influence on the subsequent process. The morphology at the top and bottom of polysilicon will affect the growth performance of stress sige. An ideal profile etched by polysilicon plasma surface treatment instrument will have the residue of hard mask on the polysilicon. The profile of polysilicon is a very vertical morphology, which is the same as the key size of hard mask.   Lateral etching occurs in polysilicon etching. When the plasma surface treatment etching process has different etching selection ratio for hard mask and polysilicon, the key size of the top of polysilicon will be different from the hard mask. For example, when a polysilicon key size is greater than the critical size of hard mask, the bias side walls in the subsequent p-type Silicon germanium grooves (PMOS Silicon Recess, PSR) plasma surface treatment instrument etching will receive more consumption, once the bias side wall thickness is not enough to protect the top of the polycrystalline Silicon, Silicon germanium in subsequent epitaxial growth, there is a big chance to grow on top of the poly Silicon germanium epitaxial forming defects, cause device failure; When the key size of polysilicon is smaller than that of hardmask, the occurrence of such defects will be much less, which is beneficial to improve the yield. Similarly, when the polysilicon has relatively serious bottom length after etching, the offset side wall at the bottom will also suffer more consumption in PSR etching, which leads to silicon and germanium defects growing at the bottom of polysilicon in subsequent silicon and germanium epitaxy. When the effective height of the hard mask is not enough, silicon and germanium defects will also grow in the top polysilicon, so it is particularly important to control the etched profile morphology in the FinFET polysilicon.   As a THREE-DIMENSIONAL transistor, the channel factor must be considered in the etching of polysilicon. The fin itself is made of bulk silicon. When the plasma surface treatment instrument etches polysilicon, the loss of the fin itself still needs to be considered in spite of the protection of silicon oxide. In the etching process, the etching process is usually switched to the traditional high selection ratio HBr/O2 step when it is 200~300 from the top of the fin, and a lower bias power is required. Also because of the existence of three-dimensional fins of the top above the top part and the following partial etching of polysilicon gate environment is different, so in the process of the plasma surface treatment instrument etching to form ideal polysilicon gate section morphology, usually have high selectivity, soft landing steps into a few steps to achieve the goal of optimization of polysilicon section morphology. Since the epitaxy of the source drain is formed directly on the fin, this means that the fin loss in FinFET polysilicon etching becomes less important than that in planar substrate silicon etching. To ensure the subsequent epitaxial growth, the polysilicon in the corner where the fin intersects the gate needs to be cleaned, so from the perspective of device integration, fin loss is inevitable.

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Plasma processor Sigma Silicon germanium trench molding control

Plasma processor Sigma Silicon germanium trench molding control

In type Р drain source area form sigma type silicon groove, need to through chemical vapor deposition, grow in the polysilicon gate oxide silicon film layer and the silicon nitride film layer. The silicon nitride film is used to form the side wall and control the distance from the ge silicon groove to the gate. The silicon oxide layer at the bottom is used as a silicon nitride plasma processor to etch a stop layer and a stress buffer layer. Then, the NMOS region is covered by photoresist and the PMOS region is exposed by photolithography. Then side walls need to be formed in the PMOS area. The main etching of the plasma processor on the side wall generally uses CF4 gas, which etches out most of the silicon nitride, so as not to contact the silicon of the lower substrate. CH3 F/O2 gas was used for over-etching to obtain a high selection ratio of silicon nitride to silicon oxide, and a certain amount of over-etching was used to remove the remaining silicon nitride.   Silicon trench molding adopts plasma processor dry etching and wet etching combined process. The HBr/O2 gas process is adopted for bulk silicon etching in the inductively coupled silicon etching machine. It has a high selection ratio for the side wall and gate hard mask layer, which can effectively prevent the exposure of polysilicon gate and avoid the excess germanium silicon defects growing in the gate during the subsequent epitaxial process. This excess germanium silicon defect causes short-circuit failure of the gate and through hole. Ammonium tetramethyl hydroxide is used in wet etching. It is a colorless or yellowish liquid with amine-like odor and is easily soluble in water. Its solution is a strong alkaline solution, which is often used as a developing solution in semiconductor exposure process and also as an etching solution of silicon.  

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Development of offset side walls

Development of offset side walls

The process with gate size below 1.0 PM is called sub-micron process. And below 0.25 PM, we call it deep submicron process. In the submicron and deep submicron age, with the decrease of gate length/Channel length, the main technical problem we faced was not only Punch Through, but also the hot carrier effect caused by Channel Electric Field. The main reason was that the width of the depletion zone extended to enter the channel, resulting in the narrowing of the effective channel length, so the equivalent electric field added on the channel increased (Vd/Leff), which gave rise to the occurrence of Electron hole Pair in the channel, and thus formed Hot carrier Injection (HCE or HCI).   The effective length of channel can only be improved by reducing the width of depletion zone. On the one hand, the width extension of depletion zone can be inhibited by increasing the concentration of channel area, NAPTimplant or Pocket implant used in advanced technology. On the other hand, the concentration of PN junction in the source leakage area is reduced, which can also reduce the width of the depletion area. The former can inhibit penetration, but it is impossible to increase the concentration all the time, after all, it will affect the opening voltage of the channel. For the latter, a low-doped LDD is adopted as the transition zone of the Junction of N+_Source/Drain, and the PN Junction of N+/PW is transferred to NLDD-/P Well, so the width of the depletion zone on the side of PW is naturally narrowed.   From the perspective of device structure, the offset side wall width size adjacent to the gate can control the position of LDD relative to the gate, or the distance of L.D doped to the bottom of the gate to achieve the purpose of controlling the gate - drain overlapped capacitance (CGDO). The rear main side wall (MainSpacer) will be injected into the following high-concentration source leakage area, so that the LDD area can be retained and a self-aligned source leakage area can be formed at the same time.   To form the side wall, a thin film is first deposited on the gate. Assuming that the thickness of the film deposition is A and the grid height is B, the height of the side wall beside the grid is A + B. Our side wall etching is backetching and anisotropic etching, which can be equivalently understood as only downward etching with little or no side etching, so if the etching amount is thickness A, the gate side wall will be left with only side wall residual, which is the side wall we want. For the main side wall, its width is the length of LDD, and its width is determined by the thickness of the deposited film, of course, the etching itself can also affect the width of the side wall.   In the submicron age, TEOS silicon oxide (TEOS silicon oxide) is deposited directly on the gate, and then the etching stops on the source leakage silicon to form the side wall. The problem with this approach is that it causes damage to the silicon. So when the device is reduced to a certain size, leakage becomes uncontrollable. Then came the 0.25 m era when the silicon oxide side wall of TEOS could not meet the requirements of the process, so the silicon nitride side wall was developed later. Because the etching of the si3N4 side wall can stop ON the silicon Oxide layer below, it has no effect ON the silicon. Such side wall is also called the silicon nitride side wall or the Oxide SiN (ON) side wall.   At an age of 0.18 m, the stress on the si3N4 side wall will decrease saturation current and increase leakage. In order to reduce the stress, the deposition temperature needs to be raised to 700℃, and the heat cost of mass production will increase, which will also increase the leakage. Therefore, ONO side wall was selected in the 0.18 m era. The bottom is also the silicon oxide formed by Rapid Thermal Oxidation (RTO), and then a thin layer of silicon nitride is deposited in the middle, followed by a layer of TEOS silicon oxide. Firstly, the silicon oxide of TEOS is etched, and the silicon nitride is stopped, and then the silicon nitride is etched and stopped on the silicon oxide of RTO. In this way, the stress and thermal cost requirements are satisfied, and there is no damage to the substrate. When it comes to the age below 65nm, the stress is no longer an important influence due to the reduction of side wall thickness. ON side wall is once again widely used in advanced semiconductor technology due to its advantages of simple process and stable control. 

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